Spin-polarized tunneling in ferromagnetic double barrier junctions

Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers. Received 9 June 2001 and Received in final form 20 August 2001     

Electroreflectance observation of localized and itinerant electron states in NiO

We have observed electroreflectance spectra in NiO at 6 eV which we believe represent transitions from the oxygen 2_p derived valence band to the nickel 4s derived conduction band. We also observe the spectrum seen earlier by McNatt near 4 eV but interpret it differently in terms of transitions from the localized 3d⁸ state to the 4s band. These interpretations are consistent with the recent model of Adler and Feinleib.     

Electronic structure of cubic uranium compounds

Self-consistent cellular multiple scattering techniques and photoemission energy distribution curves obtained at 20<hv<80 eV are used to study the density of states of UN and US. The calculations are based on a model using a finite cluster of atoms in a condensed-matter-like boundary potential. The main results refer to the mixing of thes, p, d, andf-states of uranium into a valence and a conduction band. Thef-states form orbitals with the ligands, within the valence and conduction bands. In the nitride the amount off character in the valence band is only 0.3 electrons and thef electrons are in two resonant levels (of each spin) in the conduction band. Only the first of these levels is occupied for the local, alternate from atom to atom, majority spin. In the sulfide the amount off character in the valence band is 0.59 electrons and the rest of thef-levels are in a resonance state (of majority spin) at the beginning of the conduction band. The conduction band is mainly of localized uranium 6d character. The theoretical results compare favorably with the photoemission data reported here.     

Magnetooptik und elektronische Struktur der magnetisch ordnenden Europiumchalkogenide

The absorption coefficient and the interband Faraday rotation of EuS, EuSe and EuTe thin films have been measured as function of the photon energy (1–6 eV), the temperature (2.7–300 K) and the applied magnetic field (0–11.5 kOe). In addition a magnetic field modulation technique has been developed, with a resolution of 2 ? 10^?4 deg. This allows the measurement of the Faraday rotation in fields of only 100 Oe, which is important for metamagnetic samples with low critical fields. A Kramers-Kronig transformation of the Faraday rotation leads to the circular dichroism and from these two quantities and the optical constants the off-diagonal elements of the conductivity tensor have been computed. From a comparison of this experimental result with values obtained from a modified atomic model, we deduce the character of the involved transitions and the spin polarization of the occupied ground states (4f ⁷,p(anion)). In addition the ratio of exchange splitting to band width of the empty 5d final state can be evaluated. The fine structure of the first main peak is discussed in terms of Kasuya's coupling scheme between the 4f ⁶ multiplett and the excited 5d electron. In the antiferromagnetic EuTe the temperature dependence of the Faraday rotation does not follow the net magnetization of the sample for all photon energies, but some transitions show a “ferromagnetic” behavior. This is interpreted in Slater's model of the magnetic Brillouin zone.     

Theory of Raman scattering of light on spin-flip and electronic excitation in Europium chalcogenides

The inelastic scattering of light in magnetic semiconductors from the family of the Europium chalcogenides is discussed in relation with spin-orbit coupling and d-f exchange interaction. It is shown that the Raman processes connected with spin-flip and other electronic excitations can occur in the energy range of 0.1-0.5 eV. In this case and for the typical values of d-f exchange interaction and spin-orbit coupling parameter lying between 0.05 and 0.1 eV, the values of the differentional cross-sections are between 10^-9 - 10^-11 cm²sr^-1 sec. The selection rules for the polarization of the incident and scattered photons as well as the Raman tensors for the four allowed transitions are derived. The possibility of applying spin-flip Raman processes in magnetic semiconductors in the tuning of electromagnetic radiation in Raman lasers is analyzed briefly.     

Anomalous luminescence of impurity-bound excitons in lithium borate crystals doped with cerium ions

The spectra and relaxation kinetics of the anomalous (?? < 10 ns) luminescence of Li₆GdB₃O₉:Ce³⁺ crystals have been experimentally detected. The time-resolved vacuum ultraviolet spectroscopy study has shown that optical transitions at 6.2 eV, caused by the transfer of an electron from the 4f ¹ ground state of Ce³⁺ to autoionizing states near the conduction band bottom of a crystal, lead to the formation of an impurity-bound exciton with the hole component localized on the 4f state of Ce³⁺ and the electron localized on states of the conduction band bottom. It has been found that the decay of such an exciton in Li₆GdB₃O₉:Ce³⁺ occurs through radiative recombination, leading to fast luminescence at 4.25 eV. The energy threshold for the formation of the impurity-bound exciton has been determined. The distribution functions of elementary relaxations over the reaction rate constants H(k), which determine the relaxation kinetics and luminescence quenching processes, have been calculated.     

Calculation of band offset in chalcopyrite system

A recently reformulated tight binding method is used to calculate valence band offset (VBO) at the CuInSe₂/CuGaSe₂ heterojunction. The hybrid energy is calculated in the s²p² configuration and a new model for the average hybrid energy is used. The theoretical VBO value of 0.05 eV is in good agreement with recent experimental value of 0.04 eV. The value of conduction band offset is 0.60 eV giving a type I alignment. The VBO varies linearly with bond length difference (l), as VBO=(0.24)l.     

Observation of interband transitions in polarized electron energy loss spectra of Gd(0001)

We have detected the 4f ⁷(5d6s)³→4f ⁸(5d6s)² interband transition in an angular-resolved, inelastic scattering experiment with spin-polarized, low-energy electrons from ferromagnetic Gd(0001). The spectrum of the inelastic scattering asymmetry clearly reveals the dominant spin-dependent energy loss mechanism involved. Furthermore its comparison with elastic scattering data allows a characterization of the combined role of diffraction and energy loss processes in inelastic electron scattering.     

Spin excitations in granular structures with ferromagnetic nanoparticles

Spin excitations and relaxation in a granular structure which contains metallic ferromagnetic nanoparticles in an insulating amorphous matrix are studied in the framework of the s-d exchange model. As the d system, we consider the granule spins, and the s system is represented by localized electrons in the amorphous matrix. In the one-loop approximation with respect to the s-d exchange interaction for a diagram expansion of the spin Green’s function, the spin excitation spectrum is found, which consists of spin-wave excitations in the granules and of polarized spin excitations. In polarized spin excitations, a change in the granule spin direction is accompanied by an electron transition with a spin flip between two sublevels of a split localized state in the matrix. We considered polarized spin relaxation (relaxation of the granule spins occurring by means of polarized spin excitations) determined by localized deep energy states in the matrix and the thermally activated electronic cloud of the granule. It is found that polarized spin relaxation is efficient over a wide frequency range. Estimates made for structures with cobalt granules showed that this relaxation could be observed in centimetric, millimetric, and submillimetric wavelength ranges.     

Theory of the self-trapped paramagnetic spin polaron

The self-trapped spin polaron is studied for a purely paramagnetic crystal in the limit of an extremely dilute system of carriers. A Zubarev-Green-function decoupling scheme is used. Owing to spin-flip processes the trapping potential for the spin polaron is shown to vanish as the width of the conduction band,E _b, becomes small compared with thes?f ors?d exchange constant,I. ForE _b?I our results agree with those of Kasuyaet al. In the opposite limit of a degenerate system of carriers the term that leads to trapping in the dilute case is shown to become the RKKY indirect-exchange interaction.     

Europium luminescence in fluorite upon high-energy excitation

The reflection and luminescence excitation spectra of CaF₂ crystals containing europium ions in divalent (Eu²⁺) and trivalent (Eu³⁺) states were measured in the range from 4 to 16 eV. It was established that, in CaF₂ : Eu³⁺ crystals, luminescence of Eu³⁺ ions (the f-f transitions) is effectively excited both in the charge-transfer band (at ～8 eV) and in the region of the 4f–5d transitions (at ～10 eV) but is virtually not excited in the fundamental region of the crystal (at an energy higher than 10.5 eV). Luminescence of Eu²⁺ ions (the 427-nm band) in CaF₂ : Eu³⁺ is effectively excited in the fundamental region of the crystal; i.e., luminescence of divalent europium ions occurs through the trapping mechanism. Emission of Eu²⁺ ions in CaF₂ : Eu²⁺ crystals is characterized by the excitation band at an energy of 5.6 eV (the 4f → 5d,t _2g transitions), as well as by the exciton and interband luminescence excitations. The results obtained and data available in the literature are used to construct the energy level diagram with the basic electron transitions in the CaF₂ : Eu crystals.     

Ultraviolet luminescence of Li6Gd(BO3)3: Ce crystals under selective excitation in the region of 4d → 4f transitions

The subnanosecond time-resolved ultraviolet luminescence of Li₆Gd(BO₃)₃: Ce crystals under selective excitation by ultrasoft X-rays in the region of the 4d??4f core transitions at temperatures of 7 and 293 K has been investigated for the first time. The performed investigation has revealed the following features: an intense fast component of the luminescence decay kinetics in the subnanosecond range due to the high local density of electronic excitations and the processes of Auger relaxation of the core hole; the modulation of the luminescence excitation spectrum by the ??giant resonance?? absorption band of the 4d-4f photoionization in the energy range 135?C160 eV; and a new broad luminescence band at an energy of 4.44 eV due to the direct radiative recombination between the genetically related electron in the states of the conduction band bottom and hole in the 4f ground state of the Ce³⁺ ion.     

CPA treatment of the s-d model at high temperatures

The coherent potential approximation (CPA) is applied to spin-disorder scattering in systems described by the s-d model such as moderately doped magnetic semiconductors. The possibility of a split conduction band at zero temperature is shown to persist also at high temperatures. Band-narrowing is described and conclusions are drawn regarding optical ‘red-shifts’, the Born-approximation, and the paramagnetic spin polaron in narrow energy bands.     

Far U.V. absorption spectra of manganese halides between 20 and 67 eV.

The absorption spectra of evaporated thin films of MnF₂, MnCl₂, MnBr₂ have been measured in the energy range 20–67 eV. The onset of the absorption of 3p Mn²⁺ is about 50 eV. At lower energies, the structures may be attributed to transitions from 2s F^-, 4s Br^- and 3d Mn²⁺ levels.     

Electronic structure of GdP as determined from optical data

The growth of large single crystals of GdP of various stoichiometry has permitted for the first time accurate measurements of the reflectivity for photon energies from 0.03 to 12 eV. By means of a Kramers-Kronig analysis it was possible to separate intra- and interband transitions. The latter ones have provided valuable information about the structure of the 5d conduction band, its crystal field splitting and the position in energy of the 4f levels of Gd³⁺. The variation of the plasma resonance with deviations from stoichio-iometry does not exclude a semimetallic behavior of GdP.     

Revised model for 5d electrons in the heavy rare earth metals

A revised version of a recently published model for 5d electrons in the ferromagnetic state of the heavy rare earth metals is described. The model involves the broadening of local 5d states into overlapping bands with individual widthsW. In the new approach it is assumed that the local 5d wave functions lie at some point between those for atomic 4f _n 5d 6s ² configurations and those calculated for such configurations subject to the restriction that the 4f shell is kept with its moment rigidly fixed in some given direction. The admixture of non-aligned 4f states as in the atom lowers the local energy, but it also lowers the 5d bandwidth due to misfit of the 4f states which occur with and without the presence of a 5d electron. This second effect raises the energy of the low lying states in the band. The best local states are determined by minimising the total electronic energy of the system, using approximations which are most suitable for 4f shells with large excitation energies. Bandwidths are found by fitting the observed saturation magnetic moments in Gd and Tm, and satisfyW?1 eV.     

Photoemission studies of single crystals of titanium carbide

The electron distribution in the valence band from single crystals of titanium carbide has been studied by photoelectron spectroscopy with photon energies h?ω = 16.8, 21.2, 40.8 and 1486.6 eV. The most conspicious feature of the electron distribution curves for TiC is a hybridization between the titanium 3d and carbon 2p states at ca. 3–4-eV binding energy, and a single carbon 2s band at ca. 10 eV. By taking into account the strong symmetry and energy dependence of the photoionization crosssections, as well as the surface sensitivity, we have identified strong emission from a carbon 2p band at ? 2.9-eV energy. Our results are compared with several recent energy band structure calculations and other experimental data. Results from pure titanium, which have been used for reference purposes, are also presented.The valence band from single crystals of titanium carbide have been studied by means of photoelectron spectroscopy, with photon energies ranging from 16.8 to 1486.6 eV.By taking into account effects such as the symmetry and energy dependence of the photoionization cross-sections and surface sensitivity, we have found the valence band of titanium carbide to consist of two peaks. The upper part of the valence band at 3–4 eV below the Fermi level consists of a hybridization between Ti 3d and C 2p states. The C 2p states observed in our spectra were mainly excited from a band about 2.9 eV below the Fermi level. The APW^5–9, MAPW¹⁰ and EPM¹¹ band structure calculations predict a flat band of p-character between the symmetry points X′₄ and K₃, most likely responsible for the majority of C 2p excitations observed. The C 2s states, on the other hand, form a single band centered around ?10.4 eV.The results obtained are consistent with several recent energy band structure calculations^{5–11, 13} that predict a combined bonding of covalent, ionic and metallic nature.     

Reflectance spectrum of lithium hydride at the Li K-absorption edge

Reflectance spectra of LiH single crystals are measured at the Li⁺K- absorption edge for the first time. The ?₂ spectrum shows a prominent peak at 57.8 eV followed by several structures at the high energy side. We attribute the peak to a transition from the Li⁺ 1s to the n = 1 core exciton state associated with the p-like conduction band.     

Spin transfer torque in non-collinear magnetic tunnel junctions exhibiting quasiparticle bands: a non-equilibrium Green’s function study

A non-equilibrium Green’s function formulation to study the spin transfer torque (STT) in non-collinear magnetic tunnel junctions (MTJs) exhibiting quasiparticle bands is developed. The formulation can be used to study the magnetoresistance and spin current too. The formulation is used to study the STT in model tunnel junctions exhibiting multiple layers and quasiparticle bands. The many body interaction that gives rise to quasiparticle bands is assumed to be a s ? f exchange interaction at the electrode regions of the MTJ. The quasiparticle bands are obtained using a many body procedure and the single particle band structure is obtained using the tight binding model. The bias dependence of the STT as well as the influence of band occupancy and s ? f exchange coupling strength on the STT are studied. We find from our studies that the band occupancy plays a significant role in deciding the STT and the s ? f interaction strength too influences the STT significantly. Anomalous behavior in both the parallel and perpendicular components of the STT is obtained from our studies. Our results obtained for certain values of the band occupation are found to show the trend observed from the experimental measurements of STT.     

Temperature dependence of surface magnetization in local-moment systems

We present a theory to study the temperature-dependent behavior of surface magnetization in a ferromagnetic semi-infinite crystal. Our approach is based on the single-site approximation for the s-f model. The effect of the semi-infinite nature of the crystal is taken into account by a localized perturbation method. Using the mean-field theory for the layer-dependent magnetization, the local density of states and the electron-spin polarization are investigated at different temperatures for ordinary and surface transition cases. The results show that the surface magnetic properties may differ strongly from those in the bulk and the coupling constant of atoms plays a decisive role in the degree of spin polarization. In particular, for the case in which the exchange coupling constant on the surface and between atoms in the first and second layer is higher than the corresponding in the bulk, an enhancement of surface Curie temperature and hence the spin polarization can be obtained.