Electronic structure of a Ba/<Emphasis Type="Italic">n</Emphasis>-AlGaN(0001) interface and the formation of a degenerate 2D electron gas

The electronic structure of ultrathin Ba/n-AlGaN(0001) interfaces has been investigated in situ in an ultra-high vacuum by the ultraviolet photoelectron spectroscopy method. The photoemission spectra from the n-AlGaN valence band and the spectra of the core levels Ga 3d, Al 2p, and Ba 4d have been studied under synchrotron excitation with photon energies of 60–400 eV. The modification of the spectra in the process of the formation of the Ba/n-AlGaN interface in the mode of the Ba submonolayer coverages has been revealed. It has been found that a decrease in the intensity in some spectral regions of the valence band is attributed to the interaction of the surface states of the AlGaN substrate with the Ba adatoms. It has been revealed that the interface formation results in the appearance of a new photoemission peak of the quasimetallic character at the Fermi level in the AlGaN bandgap. It has been established that the peak is due to the formation of the degenerate electron gas in the accumulation nanolayer induced by adsorption near the n-AlGaN surface.     

Charge accumulation layer in Cs,Ba/<Emphasis Type="Italic">n</Emphasis>-GaN(0001) ultrathin interfaces: Electronic and photoemission properties

Experimental studies and theoretical calculations of the photoemission from Cs/n-GaN(0001) and Ba/n-GaN(0001) ultrathin interfaces were carried out. The electronic properties of the interfaces were studied in situ using threshold photoemission spectroscopy under vacuum at a residual pressure of P ～ 5 × 10^?11 Torr. A new effect was revealed, namely, photoemission with a high quantum yield under excitation with light in the transparency region of GaN. It was shown that adsorption of Cs or Ba on n-GaN brings about the formation of a quasi-two-dimensional electron channel, i.e., a charge accumulation layer directly near the surface. The dependences of the photoemission spectra and work function on the thickness of Cs and Ba coatings were investigated. It was established that adsorption of Cs and Ba leads to a sharp decrease in the work function by ～1.45 and ～1.95 eV, respectively. The photoemission spectra were calculated, and parameters of the accumulation layer, such as the energy position of the layer below the Fermi level for different Cs and Ba coverages, were determined. It was demonstrated that the energy parameters of the accumulation layer on the n-GaN(0001) surface can be controlled by properly varying the Cs or Ba coverage. The layer thickness was found to reach a maximum for a cesium coverage of ～0.5 monolayer.     

Charge accumulation layer on the <Emphasis Type="Italic">n</Emphasis>-GaN (0001) surface with ultrathin Ba coatings

The adsorption of Ba on the n-type GaN(0001) surface is studied. It is found that submonolayer Ba coatings induce cardinal changes in the electronic properties of the surface with the formation of a charge accumulation layer in the region of the near-surface band bending. The excitation of the Ba/n-GaN system by light from the region of GaN transparency results in photoemission. The lowest value of the work function corresponds to ～1.90 eV at a Ba coverage of ～0.4 ML. Two surface bands induced by Ba adsorption are found in the surface photoemission spectra.     

Accumulation nanolayer and surface states of ultrathin Cs,Ba/<Emphasis Type="Italic">n</Emphasis>-GaN interfaces

It is found that Cs and Ba ultrathin coatings induce formation of a charge accumulation layer (2D electron channel) on the n-GaN(0001) surface. Photoemission of conduction electrons from the accumulation layer under excitation by light in the range of GaN transparency is revealed. It is established that the depth of the potential well of the accumulation layer can be deliberately controlled.     

Discussion of isomeric ratios in (<Emphasis Type="Italic">p,n</Emphasis>) and (<Emphasis Type="Italic">d</Emphasis>, 2<Emphasis Type="Italic">n</Emphasis>) reaction

Isomeric ratios (IR) in the (p, n) and (d, 2n) reactions are considered. The dependence of IR values on the projectile type and energy, the target- and product-nucleus spin, the spin difference between the isomeric and ground states of products, and the product mass number is discussed. The isomeric ratios for 46 product nuclei (from ^44m,gSc to ^127m,gXe) obtained in reactions where target and product nuclei have identical mass numbers were calculated at energies from the reaction threshold to 50 MeV (with a step of ΔE = 1 MeV). The calculations in question were performed with the aid of the TALYS 1.4 code package. The calculated IR values were compared with their experimental counterparts available from the literature (EXFOR database). In the majority of cases, the calculated IR values agree well with the experimental data in question. It is noteworthy that the IR values obtained in (d, 2n) reactions are substantially greater than those in (p, n) reactions.     

Effects of <Emphasis Type="Italic">d</Emphasis>-wave pairing in <Emphasis Type="Italic">n</Emphasis>-type high-temperature superconductors with anisotropic impurity scattering

The temperature dependences of the resistivity of single-crystal films of the Nd_{2 − x} Ce _x CuO_{4 + δ} n-type superconductors with x = 0.14 (underdoped region) and x = 0.15 (optimal doping region) and different degrees of disorder δ have been investigated in various magnetic fields (B ‖ c, J ‖ ab) in the temperature range 0.4–300 K. It has been demonstrated that there are differences in the behavior of the dependences of the slope of the upper critical field $ (dB_{c2} /dT)_{T \to T_c } $ (dB_{c2} /dT)_{T \to T_c } on the disorder parameter for the underdoped samples (x = 0.14) and the samples with the optimal doping (x = 0.15). The study of the dependence of the slope of the upper critical field on the degree of disorder has made it possible to discriminate experimentally between the superconductors with the d pairing and anisotropic s pairing. It has been revealed that the relative stability of the n-type superconductor with the optimal doping with respect to disordering is possibly due to the strong anisotropy of impurity scattering with symmetry of the d type.     

Empirical relation and establishment of shell effects in (<Emphasis Type="Italic">n</Emphasis>, 2<Emphasis Type="Italic">n</Emphasis>) reaction cross-sections at 14 MeV

The experimental data for (n, 2n) reaction cross-sections around 14 MeV neutron energy have been collected from the literature and analysed for the isotopes having 1 ≤ Z ≤ 82. The empirical relations for the reaction cross-sections have been obtained, which show fairly good fits with the experimental values. The shell effects have been established at magic nucleon numbers for (n, 2n) reaction cross-sections around 14 MeV neutron energy. The odd-even effects have also been observed as the cross-sections for odd-mass nuclei are higher than their neighbouring even-even nuclei.      

Role of (<Emphasis Type="Italic">n</Emphasis>,2<Emphasis Type="Italic">n</Emphasis>) reactions in transmutation of long-lived fission products

The conditions under which (n,γ) and (n,2n) reactions can help or hinder each other in neutron transmutation of long-lived fission products (LLFPs) are considered. Isotopic and elemental transmutation for the main long-lived fission products, ⁷⁹Se, ⁹³Zr, ⁹⁹Tc, ¹⁰⁷Pd, ¹²⁶Sn, ¹²⁹I, and ¹³⁵Cs, are considered. The effect of (n,2n) reactions on the equilibrium amount of nuclei of the transmuted isotope and the neutron consumption required for the isotope processing is estimated. The aim of the study is to estimate the influence of (n,2n) reactions on efficiency of neutron LLFP transmutation. The code TIME26 and the libraries of evaluated nuclear data ABBN-93, JEF-PC, and JANIS system are applied. The following results are obtained: (1) The effect of (n,2n) reactions on the minimum number of neutrons required for transmutation and the equilibrium amount of LLFP nuclei is estimated. (2) It is demonstrated that, for three LLFP isotopes (¹²⁶Sn, ¹²⁹I, and ¹³⁵Cs), (n,γ) and (n,2n) reactions are partners facilitating neutron transmutation. The strongest effect of (n,2n) reaction is found for ¹²⁶Sn transmutation (reduction of the neutron consumption by 49% and the equilibrium amount of nuclei by 19%).     

The emission spectrum of <Emphasis Type="Italic">p</Emphasis>-AlGaAs/GaAsP/<Emphasis Type="Italic">n</Emphasis>-AlGaAs diodes under uniaxial compression

New experimental data are presented on the effects of uniaxial compression of up to 4 kbar along the [110] and [1$ \bar 1 $ \bar 1 0] crystallographic directions on the spectra of electroluminescence and the current-voltage characteristics of diodes based on n-Al _x Ga_{1 − x} As/GaAs _y P_{1 − y} /p-Al _x Ga_{1 − x} As (y = 0.84) heterostructures that were designed for injection lasers. With increasing pressure, the spectra show a shift to shorter wavelengths, reaching 25 meV at 3 kbar; the intensity increases 2–3 times as well. Numerical calculations were carried out on the band structure of the investigated heterostructures under compression along the [110] axis, which indicate the increase in the effective band gap in the quantum well (QW) GaAs _y P_{1 − y} , with a pressure coefficient of about 8.5 meV/kbar and reduction of the barrier height at the boundaries of the QW. The calculations predict the possibility that light and heavy holes crossover at pressures above 4.5–5 kbar. The increase in the effective band gap completely describes the experimental data on the shift of the electroluminescence spectra. The mixing of light and heavy holes when approaching the band crosspoint is the probable cause of an increase in the intensity of radiation under uniaxial compression.     

Finite-Time Blow-up of Solutions of an Aggregation Equation in <Emphasis Type="Italic">R</Emphasis><Superscript><Emphasis Type="Italic">n</Emphasis></Superscript>

We consider the aggregation equation in R ⁿ , n ≥ 2, where K is a rotationally symmetric, nonnegative decaying kernel with a Lipschitz point at the origin, e.g. K(x) = e ^−|x|. We prove finite-time blow-up of solutions from specific smooth initial data, for which the problem is known to have short time existence of smooth solutions.     

Improvement of <Emphasis Type="Italic">n</Emphasis>-ZnO/<Emphasis Type="Italic">p</Emphasis>-Si photodiodes by embedding of silver nanoparticles

The photo-current of n-ZnO/p-Si heterojunction photodiodes was improved by embedding Ag nanoparticles in the interface (ZnO/nano-P_Ag/p-Si), and the ratio between photo- and dark-current increased by about three orders more than that of a n-ZnO/p-Si specimen. The improvement in the photo-current resulted from the light scattering of embedded Ag nanoparticles. The I–V curve of n-ZnO/p-Si degraded after thermal treatment (A-ZnO/p-Si) because the silicon robbed the oxygen from ZnO to form amorphous silicon dioxide and left an oxygen vacancy. Notably, the properties of ZnO/nano-P_Ag/p-Si were better in the time-dependent photoresponse under 10 V bias. Ag nanoparticles (15–20 nm) scattered the UV light randomly and increased the probability for the absorption of ZnO to enhance the properties of the photodiode.     

Noncommutative electromagnetism as a large <Emphasis Type="Italic">N</Emphasis> gauge theory

We map noncommutative (NC) U(1) gauge theory on ℝ _C ^d ×ℝ _NC ²ⁿ to U(N→∞) Yang–Mills theory on ℝ _C ^d , where ℝ _C ^d is a d-dimensional commutative spacetime while ℝ _NC ²ⁿ is a 2n-dimensional NC space. The resulting U(N) Yang–Mills theory on ℝ _C ^d is equivalent to that obtained by the dimensional reduction of (d+2n)-dimensional U(N) Yang–Mills theory onto ℝ _C ^d . We show that the gauge-Higgs system (A _μ ,Φ ^a ) in the U(N→∞) Yang–Mills theory on ℝ _C ^d leads to an emergent geometry in the (d+2n)-dimensional spacetime whose metric was determined by Ward a long time ago. In particular, the 10-dimensional gravity for d=4 and n=3 corresponds to the emergent geometry arising from the 4-dimensional N=4{\mathcal{N}}=4 vector multiplet in the AdS/CFT duality. We further elucidate the emergent gravity by showing that the gauge-Higgs system (A _μ ,Φ ^a ) in half-BPS configurations describes self-dual Einstein gravity.     

The difference between <Emphasis Type="Italic">n</Emphasis>-dimensional regularization and <Emphasis Type="Italic">n</Emphasis>-dimensional reduction in QCD

We discuss the difference between n-dimensional regularization and n-dimensional reduction for processes in QCD which have an additional mass scale. Examples are heavy flavor production in hadron-hadron collisions or on-shell photon-hadron collisions where the scale is represented by the mass m. Another example is electroproduction of heavy flavors where we have two mass scales given by m and the virtuality of the photon . Finally we study the Drell-Yan process where the additional scale is represented by the virtuality of the vector boson ( ). The difference between the two schemes is not accounted for by the usual oversubtractions. There are extra counter terms which multiply the mass scale dependent parts of the Born cross sections. In the case of the Drell-Yan process it turns out that the off-shell mass regularization agrees with n-dimensional regularization.Received: 12 January 2005, Published online: 21 February 2005PACS: 11.15.Bt, 12.38.Bx, 13.85.NiJ. Smith: Partially supported by the National Science Foundation grant PHY-0354776.     

The Study of (<Emphasis Type="Italic">n</Emphasis>, 2<Emphasis Type="Italic">n</Emphasis>) Reaction Cross Sections for Ce and Nd Isotopes up to 20 MeV

Neutron cross section calculations for ¹³⁶Ce(n, 2n)¹³⁵Ce, ¹³⁸Ce(n, 2n)¹³⁷Ce, ¹⁴⁰Ce(n, 2n)¹³⁹Ce, ¹⁴²Ce(n, 2n)¹⁴¹Ce, ¹⁴²Nd(n, 2n)¹⁴¹Nd, ¹⁴⁴Nd(n, 2n)¹⁴³Nd, ¹⁴⁶Nd(n, 2n)¹⁴⁵Nd, ¹⁴⁸Nd(n, 2n)¹⁴⁷Nd, and ¹⁵⁰Nd(n, 2n)¹⁴⁹Nd were done in the incident energy range from 10 to 20 MeV. The calculations were performed using three codes TALYS-1.6 for two-component Exciton model, EMPIRE-3.2 Malta for Exciton model, and ALICE/ASH for the Geometry-Dependent Hybrid (GDH) model. The results of model calculations were compared with the available experimental data and also with the evaluated data in the TENDL-2015 (based on the modified TALYS code), ENDF/B-VII.1 libraries. The calculated cross section data were compared with the available experimental data obtained from EXFOR and also compared with semiempirical formulas around 14–15 MeV. The results of model calculation were found to be in good agreement with the experimental data given in literature and semiempirical data around 14–15MeV.     

Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces

The electronic structure of the n-GaN(0001) and Al _x Ga_{1 ? x} N(0001) (x = 0.16, 0.42) surfaces and the Ba/n-GaN and Ba/AlGaN interfaces is subjected to in situ photoemission investigations in the submonolayer Ba coverage range. The photoemission spectra of the valence band and the spectra of the surface states and the core 3d level of Ga, the 2p level of Al, and the 4d and 5p levels of Ba are studied during synchrotron excitation in the photon energy range 50–400 eV. A spectrum of the surface states in Al _x Ga_{1 ? x} N (x = 0.16, 0.42) is found. The electronic structure of the surface and the near-surface region is found to undergo substantial changes during the formation of the Ba/n-GaN and Ba/AlGaN interfaces. The effect of narrowing the photoemission spectrum in the valence band region from 10 to 2 eV is detected, and surface eigenstates are suppressed. The Ba adsorption is found to induce the appearance of a new photoemission peak in the bandgap at the Fermi level in the Ba/n-GaN and Ba/n-Al_0.16Ga_0.84N interfaces. The nature of this peak is found to be related to the creation of an accumulation layer due to a change in the near-surface potential and enriching band bending. The energy parameters of the potential well of the accumulation layer are shown to be controlled by the Ba coverage.     

Verifiable Quantum (<Emphasis Type="Italic">k</Emphasis>,<Emphasis Type="Italic">n</Emphasis>)-threshold Secret Key Sharing

Based on Lagrange interpolation formula and the post-verification mechanism, we show how to construct a verifiable quantum (k,n) threshold secret key sharing scheme. Compared with the previous secret sharing protocols, ours has the merits: (i) it can resist the fraud of the dealer who generates and distributes fake shares among the participants during the secret distribution phase; Most importantly, (ii) It can check the cheating of the dishonest participant who provides a false share during the secret reconstruction phase such that the authorized group cannot recover the correct secret.     

Anisotropy of amorphous nanogranular composites CoNbTa-SiO<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> and CoFeB-SiO<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>

A comparative investigation of the magnetic properties of amorphous nanogranular composites (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} and (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} has been performed in the subpercolation region at temperatures in the range 4.2–300 K. The thermomagnetic dependences in the range 4.2–300 K and the processes of magnetization reversal and remanent magnetization relaxation at liquid-helium temperatures have been studied. It has been established that the average anisotropy constants of amorphous nanograins are equal to 3.6–7.0 kJ/m³ for the (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} composites and 5–8 kJ/m³ for the (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} composites. The fundamental differences in the concentration dependences of the anisotropy constant K _eff and the coercive force H _C have been revealed for the two systems under investigation. It has been demonstrated that, as the concentration of the metal phase increases, the quantities K _eff and H _C increase for the (Co₈₆Nb₁₂Ta₂) _x (SiO _n )_{100 − x} composites and decrease for the (Co₄₁Fe₃₉B₂₀) _x (SiO _n )_{100 − x} composites.     

On the <Emphasis Type="Italic">K</Emphasis><Superscript>+</Superscript><Emphasis Type="Italic">d</Emphasis> interaction at low energies

The Kd reactions are considered in the impulse approximationwithNN final-state interactions (FSI) taken into account. Realistic parameters for the KN phase shifts are used. The “quasi-elastic” energy region, in which the elementary KN interaction is predominantly elastic, is considered. The theoretical predictions are compared with the data on the K ⁺ d → K ⁺ pn, K ⁺ d → K⁰ pp, K ⁺ d → K ⁺ d, and K ⁺ d total cross sections. The NN FSI effect in the reaction K ⁺ d → K ⁺ pn has been found to be large. The predictions for the Kd cross sections are also given for slow kaons, produced from ϕ(1020) decays, as the functions of the isoscalar KN scattering length a ₀. These predictions can be used to extract the value of a ₀ from the data. The text was submitted by the authors in English.     

Study of the <Emphasis Type="Italic">A</Emphasis> ion effect on the chemical bond of Ti and O ions in <Emphasis Type="Italic">A</Emphasis>TiO<Subscript>3</Subscript> (<Emphasis Type="Italic">A</Emphasis> = Sr,Ba, Ca,Pb) crystals with perovskite structure

The local Ti d densities of states in the valence band have been calculated in clusters of ATiO₃ (A = Ca, Sr, Ba, Pb) crystals with perovskite structure by the full multiple scattering method. The d density of states in PbTiO₃ crystal is found to significantly differ from that in other crystals. This fact indicates a significant effect of lead ions on the chemical bond between Ti and O ions in this crystal.     

Quantum secret sharing between <Emphasis Type="Italic">m</Emphasis>-party and <Emphasis Type="Italic">n</Emphasis>-party with six states

A quantum secret sharing scheme between an m-party group and an n-party group is proposed using three conjugate bases. A sequence of single photons, each of which is prepared in one of the six states, is used directly to encode classical information in the quantum secret sharing process. In this scheme, each of all m members in group 1 chooses randomly his/her own secret key individually and independently, and directly encodes his/her respective secret information on the states of single photons via unitary operations, then the last one sends 1/n of the resulting qubits to each member of group 2. By measuring their respective qubits, all members in group 2 share the secret information shared by all members in group 1. It renders impossible a Trojan horse attack with a multi-photon signal, a fake-signal attack with EPR pairs, an attack with single photons, and an attack with invisible photons. We give the upper bounds on the average success probabilities for dishonest agent eavesdropping encryption using the fake-signal attack with any two-particle entangled states. Supported by the National Natural Science Foundation of China (Grant No. 10671054), the Key Project of Science and Technology Research of Education Ministry of China (Grant No. 207011) and the Natural Science Foundation of Hebei Province, China (Grant Nos. 07M006 and F2009000311)