Flux pinning in columnar-structured and single crystalline MgB2 films

We have investigated the flux pinning effect of columnar grain boundary in columnar-structured and single crystalline MgB₂ films. The MgB₂ films with columnar structure showed much higher J_c than that of single crystalline thin film, and sample having smaller grain size had a higher J_c in high magnetic fields. At 5 K, the MgB₂ film with grain size of 460 nm showed an abnormal double-peak behavior in pining force density, F_p(B), caused by competition of different types of pinning sites, such as planar defects and point defects. Field dependences of F_p in columnar-structured films suggest that the columnar grain boundary is a strong pinning source in the MgB₂ film and it plays a crucial role in enhancing J_c over a wide range of magnetic fields and temperatures.     

Effects of doping with nanoscale Co3O4 particles on the superconducting properties of powder-in-tube processed MgB2 tapes

Nanoscale Co₃O₄ particles were doped into MgB₂ tapes with the aim of developing superconducting wires with high-current-carrying capacity. Fe-sheathed MgB₂ tapes with a mono-core were prepared using the in situ powder-in-tube (PIT) process with the addition of 0.2–1.0 mol% Co₃O₄. The critical temperature decreased monotonically with an increasing amount of doped Co₃O₄ particles for all heat-treatment temperatures from 600 to 900 °C. However, the transport critical current density (J_c) at 4.2 K varied with the heat-treatment temperatures. The J_c values in magnetic fields ranging from 7 to 12 T decreased monotonically with increasing Co₃O₄ doping level for a heat-treatment temperature of 600 °C. In contrast, some improvements on the J_c values of the Co₃O₄ doped tapes were observed in the magnetic fields below 10 T for 700 and 800 °C. Furthermore, J_c values in all the fields measured increased as the Co₃O₄ doping level increase from 0 to 1 mol% for 900 °C. This heat-treatment temperature dependence of the J_c values could be explained in terms of the heat-treatment temperature dependence of the irreversibility field with Co₃O₄ doping.     

Effects of nanoscale defects on critical current density of (Y1−xEux)Ba2Cu3O7−δ thin films

In pulsed laser deposition of YBa₂Cu₃O_7?δ films, defect introduction into the films tends to anisotropically improve the pinning along the H||c direction due to the columnar growth mode of the process. In Eu-substituted samples, however, even though an increase in critical current density (J_c) in the H||c direction was observed for low fields (H = 0.2 T), the improvement was more notable for the H||ab-plane at both low and higher fields. Herein we present detailed TEM microstructural studies to understand these new trends in J_c(H), which are markedly different than flux pinning increases achieved with other methods, for example, with nanoparticle additions. Threading dislocations, observed in the Eu-substituted samples along the c-axis, account for J_c enhancement with H||c at low field. The enhanced ab-planar pinning in the Eu-substituted samples is attributed to the extensive bending of the {0 0 1} lattice planes throughout the film, and the crystal lattice defects with excess Cu–O planes, that were effective in increasing the J_c for H||ab at both low and high fields.     

Pinning,thermally activated depinning and their importance for tuning the nanoprecipitate size and density in high Jc YBa2Cu3O7−x films

YBa₂Cu₃O_7?x (Y123) films with quantitatively controlled artificial nanoprecipitate pinning centers were grown by pulsed laser deposition (PLD) and characterized by transport over wide temperature (T) and magnetic field (H) ranges and by transmission electron microscopy (TEM). The critical current density J_c was found to be determined by the interplay of strong vortex pinning and thermally activated depinning (TAD), which together produced a non-monotonic dependence of J_c on c-axis pin spacing d_c. At low T and H, J_c increased with decreasing d_c, reaching the very high J_c ～ 48 MA/cm² ～20% of the depairing current density J_d at 10 K, self-field and d_c ～ 10 nm, but at higher T and H when TAD effects become significant, J_c was optimized at larger d_c because longer vortex segments confined between nanoprecipitates are less prone to thermal fluctuations. We conclude that precipitates should extend at least several coherence lengths along vortices in order to produce irreversibility fields H_irr(77 K) greater than 7 T and maximum bulk pinning forces F_p,max(77 K) greater than 7–8 GN/m³ (values appropriate for H parallel to the c-axis). Our results show that there is no universal pin array that optimizes J_c at all T and H.     

A new method for estimating the critical current density of a superconductor from its hysteresis loop

The critical current density J_c of some of the superconducting samples, calculated on the basis of the Bean’s model, shows negative curvature for low magnetic field with a downward bending near H = 0. To avoid this problem Kim’s expression of the critical current density, J_c = k/(H₀ + H), where J_c has positive curvature for all H, has been employed by connecting the positive constants k and H₀ with the features of the hysteresis loop of a superconductor. A relation between the full penetration field H_p and the magnetic field H_min, at which the magnetization is minimum, is obtained from the Kim’s theory. Taking the value of J_c at H = H_p according to the actual loop width, as in the Bean’s theory, and at H = 0 according to an enhanced loop width due to the local internal field, values of k and H₀ are obtained in terms of the magnetization values M⁺(?H_min), M^?(H_min), M⁺(H_p) and M^?(H_p). The resulting method of estimating J_c from the hysteresis loop turns out to be as simple as the Bean’s method.     

Large transport critical currents of powder-in-tube Sr0.6K0.4Fe2As2/Ag superconducting wires and tapes

We report the achievement of transport critical currents in Sr_0.6K_0.4Fe₂As₂ wires and tapes with a T_c = 34 K. The wires and tapes were fabricated through an in situ powder-in-tube process. Silver was used as a chemical addition as well as a sheath material. All the wire and tape samples have shown the ability to transport superconducting current. Critical current density J_c was enhanced upon silver addition, and at 4.2 K, a largest J_c of ～1200 A/cm² (I_c = 9 A) was achieved for 20% silver added tapes, which is the highest in iron-based wires and tapes so far. The J_c is almost field independent between 1 T and 10 T, exhibiting a strong vortex pinning. Such a high transport critical current density is attributed to the weak reaction between the silver sheath and the superconducting core, as well as an improved connectivity between grains. We also identify a weak-link behavior from the apparent drop of J_c at low fields and a hysteretic phenomenon. Finally, we found that compared to Fe, Ta and Nb tubes, Ag was the best sheath material for the fabrication of high-performance 122 type pnictide wires and tapes.     

Strongly enhanced flux pining of GdBCO coated conductors with BaSnO3 nanorods by pulsed laser deposition

We report the effects of BSO addition on the crystallinity, texture, and the field dependency of critical current density (J_c) of GdBCO coated conductors (CCs) prepared by pulsed laser deposition (PLD). Undoped and BSO-doped GdBCO films showed only c-axis oriented growth, and the incorporated BSO nanorods exhibited epitaxial relationship with the GdBCO matrix. In comparison with undoped film, BSO-doped GdBCO film exhibited greatly enhanced J_c and higher pinning force densities in the entire field region of 0–5 T (H//c) at 77 and 65 K. The BSO-doped GdBCO film showed the maximum pinning force densities (F_p) of 6.5 GN/m³ (77 K, H//c) and 32.5 GN/m³ (65 K, H//c), ～2.8 times higher than those of the undoped sample. Cross-sectional TEM analyses exhibited nano-structured BSO nanorods roughly aligned along the c-axis of the GdBCO film, which are believed effective flux pinning centers responsible for strongly improved critical current densities in magnetic fields.     

Increase of critical current density with doping carbon nano-tubes in YBa2Cu3O7−δ

The effects of carbon nano-tubes (CNTs) on the crystal structure and superconducting properties of YBa₂Cu₃O_7?δ (Y-123) compound were studied. Samples were synthesized using standard solid-state reaction technique by adding CNT up to 1 wt% and X-ray diffraction data confirm the single phase orthorhombic structure for all the samples. Current–voltage measurements in magnetic fields up to 9 T were used to study the pinning energy U_J and critical current density J_c as a function of magnetic field at fixed temperature. We find that while T_c does not change much with the CNT doping (91–92 K), both U_J and J_c increase systematically up to 0.7 wt% CNT doping in a broad magnetic field ranges between 0.1 and 9 T and J_c in the 0.7 wt% CNT doped sample is at least 10 times larger than that of the pure Y-123. The scanning electron microscope image shows that CNTs are forming an electrical-network between grains. These observations suggest that the CNT addition to the Y-123-compounds improve the electrical connection between superconducting grains to result in the J_c increase.     

Influence of Zr and Ce doping on electromagnetic properties of (Gd,Y)–Ba–Cu–O superconducting tapes fabricated by metal organic chemical vapor deposition

(Gd,Y)Ba₂Cu₃O_x tapes have been fabricated by metal organic chemical vapor deposition (MOCVD) with Zr-doping levels of 0–15 mol.% and Ce doping levels of 0–10 mol.% in 0.4 μm thick films. The critical current density (J_c) of Zr-doped samples at 77 K, 1 T applied in the orientation of H 6 c is found to increase with Zr content and shows a maximum at 7.5% Zr doping. The 7.5% Zr-doped sample exhibits a critical current density (J_c) of 0.95 MA/cm² at H 6 c which is more than 70% higher than the J_c of the undoped sample. The peak in J_c at H 6 c is 83% of that at H 6 a–b in the 7.5% Zr-doped sample which is more than twice as that in the undoped sample. Superconducting transition temperature (T_c) values as high as about 89 K have been achieved in samples even with 15% Zr and 10% Ce. Ce-doped samples with and without Ba compensation are found to exhibit substantially different J_c values as well as angular dependence characteristics.     

Intrinsic pinning properties of FeSe0.5Te0.5

The intrinsic pinning properties of FeSe_0.5Te_0.5, which is a superconductor with a critical temperature T_c of approximately 14 K, were studied through the analysis of magnetization curves obtained using an extended critical state model. For the magnetization measurements carried out with a superconducting quantum interference device (SQUID), external magnetic fields were applied parallel and perpendicular to the c-axis of the sample. The critical current density J_c under the perpendicular magnetic field of 1 T was estimated using the Kimishima model to be equal to approximately 1.6 × 10⁴, 8.8 × 10³, 4.1 × 10³, and 1.5 × 10³ A/cm² at 5, 7, 9, and 11 K, respectively. Furthermore, the temperature dependence of J_c was fitted to the exponential law of J_c(0) × exp(?αT/T_c) up to 9 K and the power law of J_c(0) × (1 ? T/T_c)ⁿ near T_c.     

Improved critical current density in Zn doped YBCO single crystals

Magnetic measurements were made using pure YBCO and Zn doped YBa₂(Cu_1?xZn_x)₃O_7?σ. Single crystals with Zn concentration of 0.5%, 1.5%, 3.0% and 4.3%. The magnetic hysteresis loops for these samples were measured in the temperature range 0.1 ? T/T_c ? 0.96 under magnetic fields of 5 T using SQUID. It was found that the critical current density J_c increased for low Zn content samples up to 3% Zn concentration compared to pure YBCO sample and decreased for the higher Zn content samples. These values varied consistently when compared at magnetic fields of 1 T and 3 T. Moreover Zn doped samples showed significant values of J_c in the temperature range of 0.7–0.9T_c, close to critical temperature compared to pure YBCO sample. The irreversibility field H_irr was also enhanced in this temperature range showing consistent decrease with increase of Zn concentration. The peak field H_p above H_c1 and irreversibility field H_irr, both show power law dependence of the form H = m₁(1 ? T/T_c)^m2 in the temperature range of 0.75–0.96T_c. The values of parameter m₂ increased from 1.44 to 1.95 for the samples up to 3% Zn content and decreased to 1.37 for higher Zn contents. The ratio H_irr/H_p was found to be 3–4 for the lower Zn content samples and was 7–8 for the sample with high Zn content indicating more disorder for higher Zn content samples. The region between peak field H_p and irreversibility field H_irr was broadened with the increase of Zn concentration. The strong effect of Zn substitution in modifying behavior of these samples even at elevated temperatures is possibly due to the changes in the anisotropy of our samples with the increase of Zn concentration and also due to the locally induced changes in magnetic moments by Zn substitution.     

Vortex pinning in bulk-processed Y–Ba–Cu–O with ZrO2 nano-particles: Optimum pinning center size

Crystalline defects on the nano-scale were successfully introduced into YBCO high-temperature superconductors (HTS) by ZrO₂ nanometer particles addition in order to strongly pin the quantized vortices. Three batches of ZrO₂ nano-particles with different particle size distributions were used. The corresponding mean nano-particle diameters are respectively, 287, 536 and 764 nm. Serving as artificial pinning centers (APC), non-superconducting nano-particles cause a remarkable enhancement of critical current density (J_c) at T = 77 K. This improvement has been shown to depend on the size of APC. The pinning strength of nano-particles inclusions has been found to be greater with wide size dispersed nano-particles. Our results indicate that pinning properties and vortex dynamics depend on the size of APCs. The introduction of APCs with controlled size is indispensable to achieve a high J_c.     

The effect of pinning centers in Zn-doped CuBa2Ca3Cu4O12−y high-temperature superconductors

CuBa₂Ca₃Cu₄O_12−y (Cu:1234) high-temperature superconductors (HTS) doped with up to 2% Zn were grown using the high-pressure synthesis technique. Magnetization loops of the samples were measured at various temperatures between 5 and 77.3 K and magnetic fields up to 14 T. Critical current densities J_c of the samples were estimated using the critical state model. The results show that Zn-induced pinning centers increase J_c of Cu:1234 several times, depending on field and temperature. From the experimentally determined field-temperature region in which a higher Zn concentration lead to a higher J_c, we suggest the existence of a cross-over from quite efficient, extended (in the c-axes direction) pinning centers to point-like (inefficient) pinning centers at a certain temperature, depending on field. This effect can be attributed to the fact that, unlike other HTS, in Cu:1234 there is a second critical temperature T_c2 of about 70–80 K (in zero field, and 50–60 K in 15 T), related to the over-doping of pyramidal basal plane (outer CuO₂ plane).     

Time dependence of isothermal magnetization in single-phase B1 MoCy encapsulated in multiwall carbon nanocages

Isothermal magnetization M(t) in nanocrystalline single-phase B1 MoC_y encapsulated in multiwall carbon nanocages is studied within the time window of 100 < t < 5000 s. The current density J exhibits a linear logarithmic time decay. The effective activation energy U_eff increases linearly with increasing temperature T, and decreases linearly with increasing J. The behaviors of J(t), U_eff(T), and U_eff(J) can be described by the Anderson–Kim flux-creep model for thermally activated motion of uncorrelated vortices or vortex bundles over a net potential barrier U_eff. The slower relaxation of current density above the broad peak field in the isothermal magnetization curves suggests that the peak is a result of vortex dynamics.     

Critical current density and vortex dynamics in uranium irradiated Co-doped BaFe2As2

We report the effect of defects introduced by heavy-ion irradiation with 2.6 GeV uranium ions at several matching fields in single crystalline Ba(Fe_0.925Co_0.075)₂As₂. The suppression rate of T_c at lower matching fields is larger than that at higher matching fields. The critical current density calculated from magnetic hysteresis loop is enhanced up to 4.1 × 10⁶ A/cm² at 2 K. Clear dips in magnetic hysteresis loops near zero field are observed at high matching fields. Field dependence of normalized relaxation rate is suppressed, and the relationship between the dip and the relaxation rate is discussed.     

Critical properties of superconducting Ba1−xKxFe2As2

Magnetisation and magneto-resistance measurements have been carried out on superconducting Ba_1?xK_xFe₂As₂ samples with x = 0.40 and 0.50. From high field magnetization hysteresis measurements carried out in fields up to 16 T at 4.2 K and 20 K, the critical current density has been evaluated using the Bean critical state model. The J_C determined from the high field data is >10⁴ A/cm² at 4.2 K and 5 T. The superconducting transitions were also measured resistively in increasing applied magnetic fields up to 12 T. From the variation of the T_C onset with applied field, dH_C2/dT at T_C was obtained to be ?7.708 T/K and ?5.57 T/K in the samples with x = 0.40 and 0.50.     

Effects on Jc of pinning center morphology for multiple-in-line-damage in coated conductor and bulk,melt-textured HTS

The properties of discontinuous aligned pinning centers (PCs) created by high-energy heavy-ions are compared for bulk melt-textured and coated conductor HTS. Properties of PCs, which increase J_c (pinning potential and entanglement), and negative properties which decrease J_c (e.g., decreased T_c and percolation paths) are evaluated. Mechanisms are proposed to explain the very large increases in J_c resulting from multiple-in-line-damage (MILD) compared to continuous columnar pinning centers (CCPC). In particular, a mechanism which results in fluxoid entanglement, even for parallel (unsplayed) PCs, is discussed. The same mechanism is found to also account for restoration of much of the pinning potential expected to be lost due to the gaps in MILD PCs. It also accounts for the fact that at high fluence, J_c increases as fluence is increased, instead of decreasing as expected. The very low self-field in coated conductor permits separation of the negative and positive effects of PCs. It is found that parameters developed to quantify the negative effects in bulk melt-textured YBCO, by 63 GeV U²³⁸ ions, successfully describe damage to 2.1 μm thick coated conductor by 1 GeV Ru⁴⁴ ions. Coated conductor at 77 K and self-field is generally known to have J_c about 100 times that of melt-textured YBCO. However, at 77 K and applied field of 1 T, when both forms of HTS are processed with comparable numbers of near-optimum MILD PCs, the difference in J_c is reduced to a factor of 1.3–2. Whereas J_c for melt-textured YBCO increased sharply, by a factor of up to 16.8 for high-fluence MILD PCs, J_c in coated conductor increased by a smaller factor of 2.5–3.0. Nevertheless, 2.1 μm thick coated conductor, with near-optimum MILD PCs, exhibits J_c = 543 kA/cm² at 77 K and applied field of 1.0 T, and I_c = 114 A/cm-width of conductor. This is the highest value we find in the literature. The phenomenology developed indicates that for optimum MILD PCs in coated conductor, J_c ～ 700 ± 70 kA/cm² should be achievable at 77 K, 1.0 T.     

Effect of processing temperature on the superconducting properties of acetone doped MgB2 tapes

Correlation of phase formation, critical transition temperature T_c, microstructure, and critical current density J_c with sintering temperature has been studied for acetone doped MgB₂/Fe tapes. Sintering was performed at 600–850 °C for 1 h in a flowing Ar atmosphere. High boron substitution by carbon was obtained with increasing the sintering temperature; however, the acetone doped samples synthesized at 800 °C contain large size MgB₂ grains and more MgO impurities. Incomplete reaction for the acetone doped samples heated at 600 °C result in bad intergrain connectivity. At 4.2 K, the best J_c value was achieved in the acetone doped sample sintered at 700 °C, which reached 24,000 A/cm² at 10 T and 10,000 A/cm² at 12 T, respectively. Our results indicate that the small grain size and less impurity were also important for the improvement of J_c–B properties besides the substitutions of B by C.     

Thickness dependence of Ic and Jc of LTG-SmBCO coated-conductor on IBAD-MgO tapes

We have reported SmBa₂Cu₃O_y (SmBCO) films on single crystalline substrates prepared by low-temperature growth (LTG) technique. The LTG-SmBCO films showed high critical current densities in magnetic fields compared with conventional SmBCO films prepared by pulsed laser deposition (PLD) method. In this study, to enhance critical current (I_c) in magnetic field, we fabricated thick LTG-SmBCO films on metal substrates with ion-beam assisted deposition (IBAD)-MgO buffer and estimated the I_c and J_c in magnetic fields.All the SmBCO films showed c-axis orientation and cube-on-cube in-plane texture. T_c of the LTG-SmBCO films were 93.1–93.4 K. J_c and I_c of a 0.5 μm-thick SmBCO film were 3.0 MA/cm² and 150 A/cm-width at 77 K in self-field, respectively. Those of a 2.0 μm-thick film were 1.6 MA/cm² and 284 A/cm-width respectively. Although I_c increased with the film thickness increasing up to 2 μm, the I_c tended to be saturated in 300 A/cm-width. From a cross sectional TEM image of the SmBCO film, we recognized a-axis oriented grains and 45° grains and Cu–O precipitates. Because these undesired grains form dead layers, I_c saturated above a certain thickness. We achieved that I_c in magnetic fields of the LTG-SmBCO films with a thickness of 2.0 μm were 88 A/cm-width at 1 T and 28 A/cm-width at 3 T.