Transition from the Kondo effect to a Coulomb blockade in an electron shuttle

We investigate the effect of the mechanical motion of a quantum dot on the transport properties of a quantum dot shuttle.Employing the equation of motion method for the nonequilibrium Green’s function,we show that the oscillation of the dot,i.e.,the time-dependent coupling between the dot’s electron and the reservoirs,can destroy the Kondo effect.With the increase in the oscillation frequency of the dot,the density of states of the quantum dot shuttle changes from the Kondo-like to a Coulomb-blockade pattern.Increasing the coupling between the dot and the electrodes may partly recover the Kondo peak in the spectrum of the density of states.Understanding of the effect of mechanical motion on the transport properties of an electron shuttle is important for the future application of nanoelectromechanical devices.     

Theoretical study of the effect of the Coulomb blockade and Kondo resonance in the density of states using self-consistent field approximation

In a recent paper, we theoretically investigated the density of states of the composite channel–contact system in the Coulomb and Kondo regimes using the self-consistent field approximation. There are the main experimental observations of vibration features in the Coulomb blockade [H. Park et al., Nature (London) 407, 57 (2000)] and Kondo [L. H. Yu et al., Phys. Rev. Lett. 93, 266802 (2004)] regimes. In the Kondo regime, our results show that one peak at $E=\mu$ can be observed in the density of states at low temperatures (0.0026 eV ≤ k_BT ≤ 0.0000026 eV). Also, the real part of ∑₃ has one minimum peak at $E=-\mu$ and the real par of ∑₂ has one maximum peak at $E=-\mu$ for 0.01 ≤ μ ≤ 0.07 in the Kondo regime at low temperatures.     

Kondo effect of molecular complexes at surfaces: ligand control of the local spin coupling

The spin state of single magnetic atoms and molecules at surfaces is of fundamental interest and may play an important role in future atomic-scale technologies. We demonstrate the ability to tune the coupling between the spin of individual cobalt adatoms with their surroundings by controlled attachment of molecular ligands. The strength of the coupling is determined via the Kondo resonance by low-temperature scanning tunneling spectroscopy. Spatial Kondo resonance mapping is introduced as a novel imaging tool to localize spin centers in magnetic molecules with atomic precision.     

Negative photoconductivity of selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas in the middle-infrared range

The spectra of lateral photoconductivity in selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas are analyzed. It is revealed that the lateral photoconductivity spectra of these heterostructures exhibit two signals opposite in sign. The positive signal of the photoconductivity is associated with the impurity photoconductivity in silicon layers of the heterostructures. The negative signal of the photoconductivity is assigned to the transitions of holes from the SiGe quantum well to long-lived states in silicon barriers. The position of the negative photoconductivity signal depends on the composition of the quantum well, and the energy of the low-frequency edge of this signal is in close agreement with the calculated band offset between the quantum-confinement level of holes in the quantum well and the valence band edge in the barrier.     

Evolution of the Fermi surface across a magnetic order-disorder transition in the two-dimensional Kondo lattice model: a dynamical cluster approach

We use the dynamical cluster approximation, with a quantum Monte Carlo cluster solver on clusters of up to 16 orbitals, to investigate the evolution of the Fermi surface across the magnetic order-disorder transition in the two-dimensional doped Kondo lattice model. In the paramagnetic phase, we observe the generic hybridized heavy-fermion band structure with large Luttinger volume. In the antiferromagnetic phase, the heavy-fermion band drops below the Fermi surface giving way to hole pockets centered around k=(pi/2,pi/2) and equivalent points. In this phase Kondo screening does not break down, but the topology of the resulting Fermi surface is that of a spin-density wave approximation in which the localized spins are frozen.     

Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge

Herein we report on the passivation of crystalline silicon by gallium oxide (Ga₂O₃) using oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process. Excess carrier lifetimes of 2.1 ms have been measured on 1.75 Ω cm p‐type silicon, from which a surface recombination current density J₀ of 7 fA cm^–2 is extracted. From high frequency capacitance‐voltage (HF CV) measurements it is shown that, as in the case of Al₂O₃, the presence of a high negative charge density Q_tot/q of up to –6.2 × 10¹² cm^–2 is one factor contributing to the passivation of silicon by Ga₂O₃. Defect densities at midgap on the order of ～5 × 10¹¹ eV^–1 cm^–2 are extracted from the HF CV data on samples annealed at 300 °C for 30 minutes in a H₂/Ar ambient, representing an order of magnitude reduction in the defect density compared to pre‐anneal data. Passivation of a boron‐diffused p⁺ surface (96 Ω/□) is also demonstrated, resulting in a J₀ of 52 fA cm^–2. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Climbing the entropy barrier: driving the single- towards the multichannel Kondo effect by a weak coulomb blockade of the leads

We study a model proposed recently in which a small quantum dot is coupled symmetrically to several large quantum dots characterized by a charging energy E(c). Even if E(c) is much smaller than the Kondo temperature T(K), the long-ranged interactions destabilize the single-channel Kondo effect and induce a flow towards a multichannel Kondo fixed point associated with a rise of the impurity entropy with decreasing temperature. Such an "uphill flow" implies a negative impurity specific heat, in contrast with all systems with local interactions. An exact solution found for a large number of channels allows us to capture this physics and to predict transport properties.     

Role of the d-f Coulomb interaction in intermediate valence and Kondo systems: a numerical renormalization group study

Using the numerical renormalization group method, the dependences on temperature of the magnetic susceptibility χ(T) and specific heat C(T) are obtained for the single-impurity Anderson model with inclusion of d-f the Coulomb interaction. It is shown that the exciton effects caused by this effect (charge fluctuations) can significantly change the behaviour of C(T) in comparison with the standard Anderson model at moderately low temperatures, whereas the behaviour of χ(T) remains nearly universal. The ground-state and temperature-dependent renormalizations of the effective hybridization parameter and f-level position caused by the d-f interaction are calculated, and satisfactory agreement with the Hartree-Fock approximation is derived.     

Electron gas compression and Coulomb explosion in the surface layer of a conductor heated by femtosecond laser pulse

The hypothesis is put forward on the basis of experimental data that strong inhomogeneous heating of the skin layer of conducting materials by a femtosecond pulse gives rise to a double electrical layer that is formed of a “surface” layer of positive ions and a thin (about 1 nm) “subsurface” layer of a superdense (10²³–10²⁵ cm^?3) degenerate electron gas. The double layer breaks within one picosecond through the Coulomb explosion.     

Quantum corrections to the resistivity of a new nanoobject, a two-dimensional layer at the “Tellurium Clusters-Opal Matrix” internal interface

The low-temperature anomalous magnetoresistance of a new nanoobject, a two-dimensional (2D) layer at an internal interface separating nanoclusters of undoped tellurium and a dielectric matrix (opal), is studied experimentally and theoretically. The 2D layer in the Te-opal structure is a regular array of spherical surfaces coated with a 2D hole conducting layer, i.e., a so-called interface bubble lattice. The specific features observed in the magnetoresistance agree qualitatively with the theory of quantum corrections to resistivity but manifest themselves in magnetic fields unexpectedly strong for this effect (up to 120 kOe). A method for calculating quantum corrections to resistivity is developed in terms of the theory describing the effect of weak localization of noninteracting particles. This method takes into account both the complex geometric structure of the object and the specific features of the Te electronic spectrum. The parameters characterizing the phase relaxation of the 2D holes are determined. The results obtained are compared with data available on 2D layers produced on a flat surface of single-crystal Te. The features revealed in the manifestation of weak localization in an array of 2D planes randomly oriented relative to the magnetic field are discussed.     

Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation

Synthesis of silicon carbide and diamond nanoparticles is studied during short-pulse implantation of carbon ions and protons into a silicon target. The experiments are carried out using a TEMP source of pulsed powerful ion beams based on a magnetically insulated diode with radial magnetic field B _r . The beam parameters are as follows: the ion energy is 300 keV, the pulse duration is 80 ns, the beam consists of carbon ions and protons, and the ion current density is 30 A/cm². Single-crystal silicon wafers serve as a target. SiC nanoparticles and nanodiamonds form in the surface layer of silicon subjected to more than 100 pulses. The average coherent domain sizes in the SiC particles and nanodiamonds are 12–16 and 8–9 nm, respectively.     

Theoretical study of the Kirchhoff integral from a two-dimensional randomly rough surface with shadowing effect: application to the backscattering coefficient for a perfectly-conducting surface

In this paper, the backscattering coefficient of a two-dimensional randomly rough perfectly-conducting surface is investigated using the Kirchhoff approach with a shadowing function. The rough surface height/slope correlations assumed to be Gaussian are accounted for in this analysis. The scattering coefficient is then formulated in terms of a characteristic function for the integrations over the surface heights, in terms of expected values for the integrations over the surface slopes. Numerical comparisons of Kirchhoff's approach (KA) with the stationary-phase (SP) approximation are made with respect to the choice of the one-dimensional surface height autocorrelation function and the shadowing effect. For an isotropic surface the results show that SP underestimated the incoherent backscattering coefficient compared with KA. Moreover, when the correlation between the slopes and the heights is neglected, the shadowing effect may be ignored.     

Theoretical study of the Kirchhoff integral from a two-dimensional randomly rough surface with shadowing effect: application to the backscattering coefficient for a perfectly-conducting surface

Abstract

In this paper, the backscattering coefficient of a two-dimensional randomly rough perfectly-conducting surface is investigated using the Kirchhoff approach with a shadowing function. The rough surface height/slope correlations assumed to be Gaussian are accounted for in this analysis. The scattering coefficient is then formulated in terms of a characteristic function for the integrations over the surface heights, in terms of expected values for the integrations over the surface slopes. Numerical comparisons of Kirchhoff's approach (KA) with the stationary-phase (SP) approximation are made with respect to the choice of the one-dimensional surface height autocorrelation function and the shadowing effect. For an isotropic surface the results show that SP underestimated the incoherent backscattering coefficient compared with KA. Moreover, when the correlation between the slopes and the heights is neglected, the shadowing effect may be ignored.     

Oscillations of the charge in oxide at silicon surface as an origin of the process leading to the long-range effect

A model of the excitation of the periodical stress pulses in the silicon-oxide system leading to generation of moving discrete breathers (local nonlinear wave disturbances of the atomic system) has been suggested. The latter can provide transportation of energy through the bulk of a sample at the external effect on its surface (the long-range effect). Several scenarios of evolving alternating electrical fields in oxide resulting (due to its local piezoelectricity) in corresponding changes of stresses have been considered.     

Skin layer at the actin-gel surface: quenched protein membranes form flat, crumpled, and tubular morphologies

We report the discovery of a hierarchically structured skin layer formed at the surface of an isotropic gel of filamentous actin bundles at high molar ratios of alpha-actinin, an actin cross-linker, to globular actin. Confocal microscopy has elucidated the full, micron scale 3D structure. The protein skin layer, composed of a directed network of bundles, exhibits flat, crumpled, tubelike and pleated multitubular morphologies, resulting from stresses due to the underlying gel. The skin layer, which readily detaches, constitutes a model anisotropic solid membrane with stress-induced, quenched disorder.     

Structural properties and current transport in a nanocomposite formed on a silicon surface by oxidation of the porous layer

The possibility of obtaining a Si-SiO₂ nanocomposite layer by oxidation of porous silicon is demonstrated. The nanocomposite thus prepared consists of silicon oxide with inclusions of crystalline silicon in the form of rounded particles 5 to 30 nm in diameter and a filamentary cellular structure with filaments a few nanometers thick. The I-V characteristics of these structures were measured under different sample excitation conditions (photo-and thermal stimulation). The trap concentration and effective carrier mobility are estimated. Carriers are found to be captured intensely by traps created in the large-area interface in the composite structure.     

The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN

In this study, the influence of the surface layer (p-InGaN or p-GaN) capping p-InGaN/p-GaN superlattices (SLs) on the contact to p-type GaN was investigated. It was found that the specific contact resistance (_ρc)$\left({\rho }_c\right)$ to p-type GaN is lower when using p-InGaN as the surface layer. The lowest value of _ρc${\rho }_c$ was 1.99×10⁻⁴ Ω cm² at room temperature. It was also found that low temperature growth of the p-GaN layers in the SLs is beneficial for lowering the ohmic contact resistance. Unlike Ni/Au deposited directly on p-GaN (without the strained p-InGaN/p-GaN SLs), Ni/Au deposited on p-InGaN/p-GaN SLs produces ohmic behavior even before annealing.     

Multi-orbital Anderson models and the Kondo effect: a NCA study enhanced by vertex corrections

The low energy region of certain transition metal compounds reveals dramatic correlation effects between electrons, which can be studied by photoelectron spectroscopy. Theoretical investigations are often based on multi-orbital impurity models, which exhibit modified versions of the Kondo effect. We present a systematic study of a multi-orbital Anderson-like model, based on a new semi-analytical impurity solver which goes beyond simple modifications of the well known NCA. We discuss one-particle excitation spectra and in particular the role of level positions and Coulomb-matrix elements. It is shown that the low-energy region as well as the overall features of spectra critically depend on the model parameters and on the quality of the approximations used. Recent photoelectron experiments and corresponding existing calculations are put into perspective. An interesting crossover scenario between different regimes of ground states with characteristically different local correlations is uncovered.