Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells

The influence of applied electric fields on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells (CDQWs) has been investigated by solving Schr?dinger and Poisson equations self-consistently. It is found that the absorption coefficient of the intersubband transition (ISBT) between the ground state and the third excited state (1_odd-2_even) can be equal to zero when the electric fields are applied in asymmetrical AlN/GaN CDQWs, which is related to applied electric fields induced symmetry recovery of these states. Meanwhile, the energy distances between 1_odd-2_even and 1_even-2_even subbands have different relationships from each other with the increase of applied electric fields due to the different polarization-induced potential drops between the left and the right wells. The results indicate that an electrical-optical modulator operated within the opto-communication wavelength range can be realized in spite of the strong polarization-induced electric fields in asymmetrical AlN/GaN CDQWs.     

Analog Performance of Multiple-quantum-well Electroabsorption Modulator

Linearity is an important property of optical devices in analog communication systems. In this paper, we study the 3rd-order intermodulation distortion (IMD3) of an InP/InGaAsP multiple-quantum-well (MQW) traveling-wave type electroabsorption modulator (TW-EAM). We observe that dips in the measured IMD3 results are different from those by general transfer curve of electroabsorption modulators (EAMs). In order to verify it, we analyse the phenomena by using the absorption coefficients according to a wavelength and a bias voltage. Thus, we can see that the dips result from the quantum-confined Stark effect (QCSE). We propose the method to enhance linearity of MQW-EAMs by using this effect in addition to the E/O response     

Nonlinear effects in blue-shift waveguide EAM's

To exploit the vast bandwidth of optical communication systems for high bit-rate long-haul transmission, external modulators show a better system performance than directly modulated lasers. One of the main advantages of electroabsorption modulators (EAM's) compared with Mach–Zehnder modulators is the possibility to integrate the modulator with a laser having the same active layer. This reduces processing complexity and system costs. Usually the quantum confined Stark effect results in a red shift of the absorption, which leads to a small gain due to a detuned operation of the integrated laser. In contrast, blue shift structures have been proposed for these integrated devices as they show both good laser and modulator properties. These structures suffer from the drawback that saturation effects may occur for higher optical power as these devices absorb the optical power at low applied bias. The aim of this paper is to investigate the influence of nonlinear saturation effects like carrier accumulation, Burnstein–Moss-effect and carrier screening.     

Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field

The intersubband optical absorption in symmetric and asymmetric, single and coupled, double GaAs/ Ga_{1 − x}Al_xAs quantum wells is calculated. The results have been obtained in the presence of a uniform electric field as a function of the potential symmetry, size of the quantum well, and coupling parameter of the wells. In coupled double quantum wells we obtain a large Stark effect that can be used to fabricate tuneable photodetectors. We show that the effect of an applied electric field on the intersubband optical absorption is similar to changes in the dimensions of the structure. This behaviour in the intersubband optical absorption for different wells and barrier geometries can be used to study these systems in regions of interest, without the need for the growth of many different samples.     

非对称量子阱中非线性光学吸收系数的计算

非对称量子阱中的非线性光学效应因其潜在的实用价值而引起人们的广泛关注,而量子阱内带间的光学吸收问题对研究远红外光学探测器件具有重要的理论指导意义.以Pschl-Teller势阱为例研究了影响非对称量子阱中的非线性光学吸收系数的因素.考虑到带间的电子弛豫,用量子力学中的密度矩阵算符理论导出了Pschl-Teller势阱中的线性与三阶非线性光学吸收系数的表达式.因该势阱中有两个可调参数,通过调节系统的参数,发现该系统的非线性光学吸收系数呈规律性的变化.以典型的GaAs/AlGaAs非对称量子阱为例作了数值计算,通过调节系统的参数,数值计算结果表明,入射光强以及系统的非对称性对量子阱的非线性光学吸收系数有较大的影响,从而为实验上研究非对称量子阱的非线性光学效应提供了必要的理论依据.     

Intersubband transitions and refractive index changes in coupled double quantum well with different well shapes

In this study, both the linear intersubband transitions and the refractive index changes in coupled double quantum well (DQW) with different well shapes for different electric fields are theoretically calculated within framework of the effective mass approximation. Results obtained show that intersubband transitions and the energy levels in coupled DQW can importantly be modified and controlled by the electric field strength and direction. By considering the variation of the energy differences, it should point out that by varying electric field we can obtain a blue or red shift in the intersubband optical transitions. The modulation of the absorption coefficients and the refractive index changes which can be suitable for good performance optical modulators and various infrared optical device applications can be easy obtained by tuning applied electric field strength and direction.     

Intersubband scattering of cold electrons in a coupled quantum well with subband spacing below

We report measurements of the intersubband scattering rate between the first and second subband in a quantum-well structure with subband spacing (11 meV) smaller than the optical phonon energy. We measure the electron population in the second subband under CW excitation by a far-infrared laser tuned to the intersubband absorption frequency. This allows us to determine the intersubband relaxation rate using detailed balance. These measurements are novel because they are performed at very low excitation densities (I10 μW/cm²). In this regime the heating of the electron gas is negligible, so that the optically excited population in the upper subband greatly exceeds any thermal population induced by laser heating. Therefore, the relaxation rate we measure is controlled by intersubband scattering rather than carrier cooling. At low temperature we obtain an intersubband lifetime of which is power independent below 10⁻¹ W/cm², and approximately temperature independent for lattice temperatures between T=10 and 2.5 K.     

Intersubband transitions from the second subband in a coupled quantum wells structure

Asymmetrical coupled quantum wells structures with energy separation between the first two subbands of the order of 10–50 meV are key structures in the design of optically pumped intersubband lasers. In these structures the population of the second subband is not negligible and intersubband transitions from the second to higher excited subbands can be observed. In this work we investigate the temperature dependency of the intersubband transitions from the second subband in an asymmetrical coupled quantum wells structure. We show that this approach provides a direct way to measure the energy separation between the second subband and the Fermi energy which is a crucial parameter in the design of optically pumped intersubband lasers.     

Electric field effects on intersubband transitions in quantum well structures

We report on a Raman scattering study of the electric-field dependence of c₀ → c₁ intersubband transitions of electrons in a 264 Å GaAs- Al_0.3Ga_0.7As quantum-well structure. The measured Stark shifts are in very good agreement with theoretical predictions. The intensity of the intersubband peak increases rapidly with applied field due to parity-mixing. In contrast to the enhanced broadening shown by excitation resonances, the width of c₀ → c₁ is nearly independent of the field. This feature is attributed to effects of structural disorder.     

Dual-wavelength emission from optically cascaded intersubband transitions

Dual-wavelength intersubband emission at 8 and 10 microm is reported in a three-level quantum-well system in which one electronic state is at the same time the lower level of the first optical transition and the upper level of the second. Results are presented for two different AlInAs/GaInAs quantum cascade structures featuring single-well active regions with two vertical transitions or double-well active regions with one diagonal and one vertical transition. Laser action has been achieved between the excited states of the single-well device and on the diagonal transition of the double-well structure. In the latter case the wavelength can be electric-field tuned by means of the Stark effect also above threshold.     

Phonon-assisted normal incidence intersubband absorption in semiconductor quantum wells

In the presence of a normally incident mid-IR pulsed laser field, phonon-assisted photon absorption by both intrasubband and intersubband phonon scattering of conduction electrons in GaAs/AlGaAs quantum wells are predicted. The novel non-resonant and non-linear intersubband absorption is found by including the photon-induced phonon scattering process in a Boltzmann equation for phonon energies smaller than the energy separation between two electron subbands in the quantum well. The predicted phonon-assisted photon absorption by intersubband transitions of electrons from the first to the second subband is a unique feature in quantum-well systems and is expected to have a significant effect on the electron populations in both subbands.     

Semiconductor waveguide optical switches and modulators

Semiconductor waveguide optical switches and modulators are reviewed from the view point of material and structure. As material for switches and modulators, effects of both variations of refractive index and absorption are considered. As for the structure of switches and modulators, basic characteristics of devices, including length, speed, and consumption power, are investigated, and recent experimental performances are shown. For further improvement of switches and modulators, the importance of low-dimensional quantum-well structures and strained quantum-well structures are pointed out.     

Intersubband optical absorption in two-level quantum wells embedded in a planar microcavity

A theoretical analysis of the optical absorption including both the linear and third-order non-linearity arising from intersubband transitions in two-level quantum wells, which are embedded in a planar microcavity, has been performed. Starting from the Maxwell–Lorentz equations, the expressions of the field in each layer are explicitly given, and the field in the quantum wells is determined via an integral equation, in which the third-order non-linearity is included. Then, by matching the boundary conditions, the field in the quantum-well microcavity structure is rigorously determined, and the absorption coefficient is thus obtained. Detailed numerical calculations show that the optical intersubband absorption can be significantly modified due to the coupling between the quantum wells and the microcavity. This revised version was published online in November 2006 with corrections to the Cover Date.     

Pöschl-Teller势阱中线性与非线性光学吸收系数的计算

非对称性量子阱中的非线性光学效应因其潜在的实用价值而引起了人们的广泛关注,而量子阱内带间的光学吸收问题对研究远红外光学探测器件具有重要的理论指导意义.考虑带间的电子弛豫,用量子力学中的密度矩阵算符理论导出了Pöschl-Teller 势阱中的线性与三阶非线性光学吸收系数的表达式.通过调节Pöschl-Teller势阱中两个可调参数κ和λ,势阱的形状及其非对称性会随着κ和λ的取值不同而明显不同,从而其线性与非线性光学吸收系数的大小也会随势阱参数κ、λ和入射光强的变化而呈规律性的变化,并且当入射光强增强到一定程度会出现较强的饱和吸收现象.     

Linear and nonlinear optical absorption in different graded quantum wells modulated by intense laser field

The laser field dependence of the linear and nonlinear intersubband optical absorption in different graded quantum wells (GQWs) is investigated in the effective mass approximation. Results obtained show that the position and the magnitude of the linear and total absorption coefficients depend on the laser parameter and the shape of GQW. The resonant peak of total absorption coefficient can be bleached at sufficiently high incident optical intensities. Such a dependence of the exciting optical intensity on the external field strengths in different GQWs can be very useful for several potential device applications. It should point out that by applying the laser field we can obtain a blue shift or a red shift in the intersubband optical transitions.     

The effects of hydrostatic pressure on the nonlinear intersubband transitions and refractive index changes of different QW shapes

In this study, the effects of hydrostatic pressure on the linear and nonlinear intersubband transitions and the refractive index changes in the conduction band of different quantum well shapes are theoretically calculated within framework of the effective mass approximation. Results obtained show that intersubband properties and the energy levels in different QWs can be modified and controlled by the hydrostatic pressure. The modulation of the absorption coefficients and the refractive index changes which can be suitable for good performance optical modulators and various infrared optical device applications can be easily obtained by tuning the hydrostatic pressure strength.     

Study of optical properties in a cubic quantum dot

In this paper, the effect of hydrostatic pressure on both the intersubband optical absorption coefficients and the refractive index changes is studied for typical GaAs/Al _x  Ga_1?x As cubic quantum dot. We use analytical expressions for the linear and third-order nonlinear intersubband absorption coefficients and refractive index changes obtained by the compact-density matrix formalism. The linear, third-order nonlinear, and total intersubband absorption coefficients and refractive index changes are calculated at different pressures as a function of the photon energy with known values of box length (L), the incident optical intensity (I), and Al concentration (x). According to the results obtained from the present work, we have found that the pressure plays an important role in the intersubband optical absorption coefficient and refractive index changes in a cubic quantum dot.     

Two-electron linear intersubband light absorption in a biased quantum well

We point out a novel manifestation of many-body correlations in the linear optical response of electrons confined in a quantum well. Namely, we demonstrate that along with the conventional absorption peak at a frequency omega close to the intersubband energy delta, there exists an additional peak at frequency h omega approximately = 2delta. This new peak is solely due to electron-electron interactions, and can be understood as excitation of two electrons by a single photon. The actual peak line shape is comprised of a sharp feature, due to excitation of pairs of intersubband plasmons, on top of a broader band due to absorption by two single-particle excitations. The two-plasmon contribution allows us to infer intersubband plasmon dispersion from linear absorption experiments.     

Optoelectronic-VLSI packaging with polarization-selective computer-generated holograms

We present what is believed to be the first packaged module incorporating polarization-based beam-forming optics integrated with an optoelectronic-VLSI device. The chip has multiple quantum-well modulators and detectors that are flip-chip bonded onto a silicon CMOS integrated circuit. In the assembled module a polarization-selective computer-generated hologram converts linearly polarized light into a two-dimensional spot array to illuminate the output modulators. The lenslets do not interfere with the input data or the reflected output, which is orthogonally polarized. We demonstrate a 9x10 modulator array, showing good spot-intensity uniformity and registration with modulators.