Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD

Micro‐Raman measurements have been carried out in order to study the V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by metal‐organic chemical vapor deposition (MOCVD). Photoluminescence (PL) studies in InP/InAlAs/InP heterostructures [1] , [2] show a strong dependence of the PL band linewidth on V/III molar ratio. In addition to the observation of the two‐mode behavior and the disorder activated modes in InAlAs alloy, an analysis of Raman spectra shows a line shape broadening and wavenumber shift of Raman peaks for various V/III molar ratios, with minimum linewidth and lattice mismatch occurring at V/III = 50. Also, a strong dependence on the composition modulation of the AlAs‐like longitudinal optic (LO_AlAs−like) phonon was observed due to clustering. Calculation of the in‐plane strain shows that the lattice mismatch between the epilayer and the substrate is relatively insensitive to flux ratio variation within the range investigated. Therefore, the high arsenic overpressures used have an insignificant adverse effect on the quality of the hetero‐interfaces. Copyright © 2009 John Wiley & Sons, Ltd.     

On factors affecting alloy clustering in In0.52Al0.48As layers grown on InP substrates by molecular beam epitaxy

Growth of In_0.52Al_0.48As epilayers on InP (100) substrates by molecular beam epitaxy at a wide range of substrate temperatures (470 - 550 °C) and V/III flux ratios is carried out. Low temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) measurements showed a strong dependence of the PL and XRD linewidths and lattice-mismatch on the substrate temperature. Minimum PL and XRD linewidths and lattice-mismatch were found to occur at substrate temperatures between ≈ 500 - 520 °C. The XRD intensity ratios (I_epi/I_sub) were generally higher within the same substrate temperature range at which the lattice-mismatch was the lowest. XRD rocking-curves of samples grown at low temperatures showed the main epilayer peak to be a composition of smaller peaks which can strongly indicate the presence of alloy clustering. PL spectra taken at increasing temperatures showed the quenching of the main emission peak followed by the evolution of a distinct peak at lower energy, possibly associated with carrier localization due to the presence of lattice disorder. Within the range of V/III flux ratios investigated (32 to 266), the lowest PL linewidth of 14 meV was recorded for the samples grown at a V/III ratio of 160. The lattice-mismatch between the epilayer and the substrate for these samples was also found to be relatively insensitive to changes in the V/III flux ratios.     

Mobility enhancement in MBE-grown InxGa1−xAs/In0.52Al0.48As modulation-doped heterostructures

Pseudomorphic In_xGa_1−xAs/In_0.52Al_0.48As modulation-doped heterostructures were grown by molecular beam epitaxy (MBE) on InP (100) substrates over a range of indium compositions fromx=0.53 to 0.75. Low temperature photoluminescence (PL) measurements show a prominent reduction in the InGaAs linewidth due to the quantum-size effect as the indium composition is increased from its lattice-matched value of 0.53. The lowest linewidth of 6.8 meV was achieved at an indium composition of 0.65, above which an increase in the linewidth was observed due to the overwhelming effects of interfacial strain. The Hall mobilities at 300 K and 77 K increase in correspondence to the PL linewidth reduction as the indium composition is increased. Although initial signs of mobility saturation can be seen at an indium composition of 0.65, the peak mobility at 77 K of 8.9×10⁴cm²V s⁻¹was achieved at an indium composition of 0.70. There is experimental evidence to indicate that the mobility enhancement at increasing indium composition is due to an effect of a reduction in the alloy scattering and in the effective mass of the carriers. It was found that the insertion of an additional In_0.53Ga_0.47As interface smoothing layer between the strained InGaAs channel and the In_0.52Al_0.48As spacer layer did not have a significant effect on the mobility enhancement in the heterostructures.     

Linear optical absorption and photoluminescence emission properties of gold nanoparticles prepared by laser ablation technique

Gold nanoparticles of average size varying between 1.1 and 3.3?nm are prepared by 1064?nm Nd:YAG laser ablation of solid gold target kept in ethylene glycol medium. The measured UV-Visible absorption spectra showed the presence of sharp absorption peaks in the UV and in the visible regions due to the interband transition and surface plasmon resonance (SPR) oscillations in Au nanoparticles, respectively. The increase in linewidth of the SPR peaks with the reduction in particle sizes is observed due to intrinsic size effects. The prepared samples exhibit photoluminescence (PL) emissions in the UV-Visible region peaked at ??354?nm due to the recombination of electrons with holes from sp conduction band to d-band of Au. The peak PL intensity in the sample prepared with 60 minutes of laser ablation time is enhanced by a factor of ??2.5 compared to that obtained in the sample prepared with a laser-ablation time duration of 15 minutes.     

ODMR experiments on the 1.65eV luminescence in GaP:Cu

Optically detected magnetic resonance experiments on the 1.65eV emission band in a Cu-doped LPE-grown GaP layer are reported. A strong resonance with a g-value of g = 2.006 ± 0.003 is observed. The linewidth depends on both microwave and laser excitation power. Other resonances, appearing at two and three times the field of the strong resonance, have also been measured. An interpretation of the measurements is given, based on the recombination of exchange coupled donor-acceptor pairs.     

Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates

The spinodal-like decomposition of In_xGa_1−xP epitaxial layer prepared by low-pressure metallorganic vapour phase epitaxy was studied by means of photoluminescence and transmission electron microscopy. Epitaxial layers were grown on GaP substrates at T_g = 740 °C and reactor pressure of 20 mbar. We show that presence of spinodal-like decomposition occur at samples with InP mole fraction higher as x = 0.2 and V/III ratio of 75. The low-temperature photoluminescence spectra shows that in partially decomposed samples a characteristic broad band occurred close to 1.985 eV. An increase in the V/III ratio up to a value of 350 suppressed the decomposition, and PL signal with only one narrow transition was obtained.     

Spectral linewidth of inversionless and Raman lasers in V-type three-level systems

A theoretical analysis of the spectral linewidth of V-type inversionless and Raman lasers is presented. First, we examine the effects of the atomic coherence between dressed states and the Autler-Townes splitting on the linewidth. It is demonstrated that near above threshold, the V inversionless laser has a narrower linewidth than that of the two-level laser. Instead of the dressed coherence, it is the Autler-Townes splitting that is responsible for the linewidth reduction though the dressed coherence determines the laser gain. Next, we explore the effects of the generated laser intensity on the linewidth. It is shown that the linewidths of the V inversionless and Raman lasers follow the usual 1/I decrease for smaller laser intensity I, but a slower decrease than 1/I for larger laser intensity. For the V Raman laser, even more surprisingly, with the laser intensity increasing, the linewidth appreciably increases as well. As a result, well above threshold, the V inversionless and Raman lasers may have a larger linewidth than that of the two-level laser. Finally, a comparison is made between the V lasers and the Λ lasers. It is found that the linewidth of the Λ inversionless laser shows a fast 1/I ² decay under optimum conditions. Received 25 October 1999 and Received in final form 10 March 2000     

The effect of rf power on the growth of InN films by modified activated reactive evaporation

We report the effect of rf power on the structural, optical and electrical properties of InN films grown by modified activated reactive evaporation. In this technique, the substrates were kept on the cathode instead of ground electrode. The films grown at higher rf power shows preferential c-axis orientations for both silicon and glass substrates. The films prepared at 100 W show best structural, electrical and optical properties. The c-axis lattice constant was found to decrease with increase in rf power which can be attributed to reduction in excess nitrogen in the films. The band gap decreases with increase in rf power due to Moss-Burstein shift. The decrease in carrier concentration and optical band gap with increase in rf power can also be related to excess nitrogen in the film. The Raman spectra shows a red shift in the A₁(LO) and E₂ (high) mode from the reported value. The possible origin of the present large band gap is due to Moss-Burstein shift. The new film growth method opens opportunities for integrating novel substrate materials with group III nitride technologies.     

Grating tuned Ti:Sa laser for in-source spectroscopy of Rydberg and autoionizing states

Due to the large absorption cross section for optical transitions into Rydberg and autoionizing states compared to non-resonant ionization, these states are of particular interest for use in efficient laser resonance ionization excitation schemes as used in Resonant Ionization Laser Ion Sources (RILIS). In order to identify these atomic states extensive laser spectroscopy has to be performed. The lasers employed at TRIUMF’s laser ion source are birefringent filter tuned titanium:sapphire (Ti:Sa) lasers which are designed for long term frequency stability rather than continuous tuning. The design and characteristics of a grating tuned, high repetition rate, pulsed Ti:Sa laser for spectroscopy applications are presented. This laser allows fast scans of up to 40 THz with a laser linewidth of approximately 6 GHz. First tests were performed by scanning across the Rydberg series of gallium.     

CdTe/CdZnTe多量子阱激子复合动力学性质的研究

报道了分子束外延制备的高质量CdTe/Cd_0.64Zn_0.36Te多量子阱结构的光学性质,由变温光致发光光谱讨论了随温度升高辐射线展宽和辐射复合效率降低的机理.在变密度激发的皮秒时间分辨光谱中,发现不同激发密度下发光衰减时间不同,并研究了它的机理.在高激发密度下观测到n=2的重空穴激子发光. 关键词：     

Photoluminescence spectra of Ga-doped and Al-doped 4H-SiC

Blue and violet photoluminescences of Ga-doped and Al-doped 4H-SiC single crystals grown from a Si melt have been studied at 2 ~ 200 K. Luminescence spectra under continuous excitation and their dependences on temperature and excitation intensity as well as temperature dependence of the luminescence intensity are measured. Time-resolved spectra and decay curves after pulsed excitation also are observed at various temperatures. The luminescences at 2 K are found to be due to pair recombination between the N donor introduced unintentionally and the Ga or Al acceptor. The spectra of the two samples resemble each other in shape, and each consists of a zero-phonon peak and its phonon replicas. At higher temperatures, another emission appears due to the recombination of free electrons with bound holes at the acceptors in place of the pair emission. From the energies of the zero-phonon peaks of these two kinds of emissions, the ionization energies of the Ga and the Al acceptors are determined to be 249 ± 3meV+E_x and 168 ± 3 meV + E_x, respectively, where E_x is the exciton binding energy of 4H-SiC, and that of the N donor is estimated to be 55 ± 7 me V using an appropriate approximation.     

Optical probe of InAs/GaAs self-assembled quantum dots grown using low growth rate and growth interruptions

We have investigated the optical properties of InAs/GaAs self-assembled quantum dots (QDs), grown at 500 °C using a low growth rate (0.014 ML/s), growth interruptions and a two-stage capping process. The samples exhibited large-size dots with densities in the range (3-4.5) × 10⁹ cm⁻². Macro-photoluminescence (macro-PL) measurements revealed the presence of five electronic sub-bands in the dots, with the ground state (GS) emission exhibiting a linewidth of ∼70 meV. Because of the dots large size and composition dispersions, associated with the growth method, it was possible to resolve single dots emissions using micro-PL (μ-PL) excitation in the barrier layers of the as-grown samples. The sharp PL lines were detected 60-140 meV above the GS peak energy. High-resolution resonant optical excitation of the dots PL evidenced that these fine lines originate from exciton complexes confined to the GS of individual dots. Non-resonant power dependence μ-PL spectroscopy results further confirmed the occurrence of both single exciton (X) and biexciton (XX) radiative recombinations. Finally, with increasing lattice temperature up to 95 K, PL emissions from most of these nanostructures suffered the usual thermal quenching, with activation energies (E_a) ranging between 12 and 41 meV. The relatively small values of E_a suggest that the growth technique implemented here favors the formation of defects centers in the vicinity of the QDs.     

Excitation energy division in 51V + 197Au collisions at and near the barrier

Mass- and charge-yield distributions for 19 < Z < 84 were determined radiochemically for the binary collision products of ⁵¹V + ¹⁹⁷Au collisions at a bombarding energy corresponding exactly to the Bass-model barrier, E _cm = B, and at E _cm = B + 25 MeV. The average excitation energies as a function of Z are determined by comparing the centroids of the experimental, secondary mass distributions for given values of Z with the calculated primary centroids from minimization of the potential energy of the di-nuclear system, i.e. from the missing masses. At the barrier, in striking contrast to a thermal equilibrium, we find an extreme donor-acceptor asymmetry in the excitation-energy division reminiscent of the “sawtooth” phenomenon in low-energy nuclear fission. Here, the excitation energy sharing is apparently dominated by shape fluctuations at scission. At the slightly higher bombarding energy, E _cm = B + 25 MeV, we observe a rapid change toward equipartition of the excitation energy indicating that, here, the excitation energy division due to shape fluctuations is already covered up by the dissipative exchange of nucleons. Also, the balance of integral cross sections for fusion fission, deep-inelastic scattering, and quasi fission is investigated and is shown to contain important information about the dynamical evolution of the ⁵¹V + ¹⁹⁷Au system after having passed the entrance channel barrier.     

Excitation and emission of hexavalent uranium in KMgF3

Single crystals of KMgF₃ containing uranium have been grown in an oxidizing atmosphere. Absorption, selective laser excitation and emission have been obtained at liquid helium temperature. There is a resonance line at 511.45 nm and this has been shown to be due to a magnetic dipole transition between singly degenerate levels. The polarized excitation results are consistent with a charge compensated UO₄ centre having D_4h symmetry.     

Dual-wavelength diode-pumped laser operation of N p-cut and N g-cut Tm:KLu(WO4)2 crystals

Simultaneous continuous-wave laser oscillation at two wavelengths has been observed and studied in a diode-pumped monoclinic N _p-cut Tm:KLu(WO₄)₂ for different transmission of the output coupler. The maximum output power reached 1.15 W with a slope efficiency of 20.4 % with respect to the absorbed power for polarization parallel to the N _m optical axis. In an analogous N _g-cut crystal, the dual-wavelength laser operation is accompanied by polarization switching with increasing pump power and the switching point depends on the output coupling. The thresholds are slightly higher, and the slope efficiency reached a maximum of 25.5 % for polarization parallel to N _m at low pump levels, but at high pump levels, the oscillating polarization is parallel to N _p, reaching maximum output power of 3.09 W. Simple modelling with rate equations taking into account reabsorption losses explains qualitatively the complex behavior observed in the continuous-wave laser experiments with this anisotropic biaxial laser crystal.     

CdSe/CdZnSe超晶格的激子光学性质的研究

用分子束外延法在GaAs衬底上生长了CdSe/Cd0.65Zn0.35Se超晶格结构。利用X射线衍射（XRD）、77K下变密度激发的光致发光光谱和变温度光致发光光谱研究了CdSe/CdZnSe超晶格结构和激光复合特性，在该材料中观测到激子－激子散射发射峰，变密度激发光致发光光谱和谱温度光致发光光谱证实了这一现象，激子发射峰的线宽随着温度的升高而展宽，低温时发光峰的宽度主要是由合金组分和阱垒起伏引起的，没温时激子线宽展宽是由于激子与纵光学声子和离化的施主杂质间的散射作用引起的，光致发光的强度随着温度的升高而降低，这主要是由激子的热离化造成的，也就是说，热激发使得电子或空穴由阱中跃迁至垒上。     

Narrow Linewidth Tm:YLF Laser with Volume Bragg Grating Dual-End-Pumped by Equidirectional-Polarization Fiber-Coupled Laser Diode

We demonstrate a narrow linewidth Tm:YLF laser with a volume Bragg grating (VBG) that was pumped by an equidirectional-polarization fiber-coupled laser diode using a dual-end-pumping configuration. For an optimized output coupler with a radius of curvature of 150 mm and transmission of 15% at a wavelength of 1.91 μm, the maximum output power was 15.6 W for an absorbed pump power of 51.7 W at 1,907.93 nm, and the output had a narrow linewidth of 0.22 nm. This corresponds to an optical-to-optical conversion efficiency of 30.2% and the slope efficiency was 36.7%.     

ESR of LaS : Er and the origin of random strains in dilute rare earth alloys

ESR of LaS : Er indicates a г₇ ground state for the Er ion. The data exhibit an angular dependent linewidth upon rotating the magnetic field H in the (011) plane with a minimum of the linewidth for H along the [111] direction. This feature is similar to that obtained for LaSb : Dy (although the effect is significantly smaller in the present case) but it is different from Ag : Dy and Au : Er which exhibit a clear maximum linewidth for H along the [111] direction upon rotating the magnetic field in the (011) plane. Using moment calculation, we demonstrate that this different behaviour is due to the dominance of г₃ type of strains in LaSb : Dy and LaS : Er but г₅ type of strains in the case of Ag : Dy and Au : Er. For the case of LaSb : Dy, this idea is supported by direct lineshape analysis. Knowledge of the magnetoelastic constants enables us to extract the width of the strain distributions. Free energy calculations together with the large magnetoelastic coupling constant measured by others for LaSb : Dy, might indicate that the large strain effects are associated with softening of the elastic constants C(г₃) at low temperatures.     

High performance III/V RTD and PIN diode on a silicon (001) substrate

We report on the fabrication of high performance InP-based devices on an exact (001)Si-substrate. On an InP-on-Si quasi-substrate, the growth of superlattices and low-temperature InAlAs buffer for surface and device layer improvement is investigated. The selected device examples are an InGaAsP PIN diode and an (In)AlAs/In(Ga)As resonant tunnelling diodes. The functionality of these examples relies sensitively on sharp interfaces of ultra thin layers and a high optical quality of epitaxially grown III/V layers silicon substrates. A qualitative improvement is obtained for a low-temperature InAlAs buffer layer grown prior to the of device layers. Based on device models extracted from the fabricated devices a potentially low-cost optical receiver circuit on a Si-substrate is proposed and simulated using HSPICE up to 10 Gbit/s. PACS 73.40.Kp; 73.43.Jn; 73.61.Ey; 78.70.Ck; 78.70.Gq     

Amplification of a <Emphasis Type="Italic">Q</Emphasis>-Switched Ho:GdVO<Subscript>4</Subscript> Oscillator in Thulium-Doped Large-Mode-Area Fiber

We report a high peak power, narrow linewidth, stable pulsed Ho:GdVO₄ amplifier based on thuliumdoped fiber, which produces 6.65 W average output power at 2,048 nm and 56.8 kW peak power with 11.7 ns pulse width at 10 kHz repetition rate. We use a simple Q-switched Ho:GdVO₄ laser as a seed laser and a thulium-doped fiber pumped by a 792 nm laser diode as an amplifier. The fiber amplifier provided 6.5 dB gain to the input signal. The spectral linewidth of the Ho:GdVO₄ amplifier remains < 0.5 nm with an M² beam quality of 1.36.