Light emission properties in a double quantum dot molecule immersed in a cavity: Phonon-assisted tunneling

Two main mechanisms dictate the tunneling process in a double quantum dot: overlap of excited wave functions, effectively described as a tunneling rate, and phonon-assisted tunneling. In this paper, we study different regimes of tunneling that arise from the competition between these two mechanisms in a double quantum dot molecule immersed in a unimodal optical cavity. We show how such regimes affect the mean number of excitations in each quantum dot and in the cavity, the spectroscopic resolution and emission peaks of the photoluminescence spectrum, and the second-order coherence function which is an indicator of the quantumness of emitted light from the cavity.     

Inelastic transport through double quantum dot systems

Inelastic transport through double quantum dot systems with coupling between electronic and vibrational degrees of freedom is examined by means of a master equation approach. The current and the conductance are analyzed for both weak and strong interdot couplings. The results show that an asymmetry in the current-voltage characteristic and appearance of negative differential conductance due to electron-phonon interaction. The influence of temperature on the current is studied and found that increasing temperature gives rise to eliminating the current blockade and, thus, removing the Coulomb diamonds in the conductance spectra.     

Spectroscopy of molecular states in a few-electron double quantum dot

Semiconductor quantum dots, so-called artificial atoms, have attracted considerable interest as mesoscopic model systems and prospective building blocks of the “quantum computer”. Electrons are trapped locally in quantum dots, forming controllable and coherent mesoscopic atom- and moleculelike systems. Electrostatic definition of quantum dots by use of top gates on a GaAs/AlGaAs heterostructure allows wide variation of the potential in the underlying two-dimensional electron gas. By distorting the trapping potential of a single quantum dot, a strongly tunnel-coupled double quantum dot can be defined. Transport spectroscopy measurements on such a system charged with N=0,1,2,… electrons are presented. In particular, the tunnel splitting of the double well potential for up to one trapped electron is unambiguously identified. It becomes visible as a pronounced level anticrossing at finite source drain voltage. A magnetic field perpendicular to the two-dimensional electron gas also modulates the orbital excitation energies in each individual dot. By tuning the asymmetry of the double well potential at finite magnetic field the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot can be aligned, resulting in a second level anticrossing with a larger tunnel splitting. In addition, data on the two-electron transport spectrum are presented.     

通过带有侧向耦合量子点的量子线中的光辅助隧穿

应用非平衡格林函数方法,研究了带有微波调制的侧向耦合量子点的量子线中的光辅助隧穿.在考虑了量子干涉和微波场的情况下,得出并讨论了电子传榆幅度和相位方面的信息.电子传输幅度显示出一系列的反共振峰(对应图中的谷结构).峰值的高度与振荡的微波场的幅度和频率有关,而峰的位置只与微波场的频率有关.在有限温的情况下,反共振峰值的高度随着温度的增加而减小,当温度足够高时,反共振峰会消失,特别地,在一定的温度下,低温下谷的地方会演变成峰.     

Current bistability in resonant tunneling through a semiconductor quantum dot

We discuss resonant tunneling through quantum dot energy levels considering the charging energy of the dot. The hamiltonian of the system is reduced to a form of the Anderson hamiltonian of resonant tunneling. The mean-field approximation is applied and current–voltage characteristics are evaluated. The self-consistent solution is investigated for the low tunneling rate case in the low-temperature condition. The current bistability and the related current hysteresis are pointed out. The Coulomb staircase is shown in the current–voltage characteristics. These features are all due to Coulomb repulsion within the dot.     

电声子相互作用对量子点分子中单电子隧穿的影响

研究了双量子点系统中的电子隧穿动力学过程，在考虑电子与声子相互作用的情况下用基于 正则变换的微扰方法解析地得到了电子动态隧穿电流的表达式. 并且详细分析电子与声子耦 合引起的退相干问题，在此基础上指出了可能的退耦机理. 关键词： 电声子相互作用 双量子点 隧穿     

隧穿量子点分子模型与光场相互作用的量子信息保真度

利用全量子理论和数值计算方法,研究隧穿量子点分子模型与光场相互作用的量子信息保真度,通过计算机模拟出量子点分子、光场和系统的保真度随时间的演化图像,分析了压缩系数和失谐量对量子信息保真度的影响.结果表明：改变初始光场的压缩系数和失谐量能调节相互作用系统的量子信息保真度.     

Inelastic tunneling of electrons through a quantum dot with an embedded single molecular magnet

We report a theoretical analysis of electron transport through a quantum dot with an embedded biaxial single-molecule magnet (SMM) based on mapping of the many-body interaction-system onto a one-body problem by means of the non-equilibrium Green function technique. It is found that the conducting current exhibits a stepwise behavior and the nonlinear differential conductance displays additional peaks with variation of the sweeping speed and the magnitude of magnetic field. This observation can be interpreted by the interaction of electron-spin with the SMM and the quantum tunneling of magnetization. The inelastic conductance and the corresponding tunneling processes are investigated with normal as well as ferromagnetic electrodes. In the case of ferromagnetic configuration, the coupling to the SMM leads to an asymmetric tunneling magnetoresistance (TMR), which can be enhanced or suppressed greatly in certain regions. Moreover, a sudden TMR-switch with the variation of magnetic field is observed, which is seen to be caused by the inelastic tunneling.     

Shot noise of the spin inelastic tunneling through a quantum dot with single molecule-magnet

We have studied the quantum fluctuations of inelastic spin-electron scattering in quantum dot with an embedded biaxial single molecule-magnet and particularly investigated the zero-frequency shot noise and Fano factor in different magnetic fields. It is found that the shot noise and Fano factor exhibit a stepwise behaviour as bias increases in the presence of interaction between the electron and molecule-magnet for a weak magnetic field. As magnetic field becomes strong, a dip is displayed in the shot-noise-bias curve due to the suppression of inelastic shot noise caused by the quantum tunneling of magnetisation. Because of the spontaneous inelastic tunneling at zero bias, a small shot noise occurs, which results in the case of Fano factor F >> 1. Moreover, our results show that the sweeping speed can also influence the shot noise and Fano factor obviously.     

微波作用下有直接隧穿量子点系统中的泵流特性

利用演化算符的方法,研究了量子点体系中的电流以及自旋流,该体系中量子点和左右磁性电极耦合并且受到微波作用,且两电极之间有直接隧穿,得到了体系电流的解析表达式.发现对于无直接隧穿和零偏压情况,无论对称结构还是非对称结构,电流和自旋流总为零.对于直接隧穿和零偏压情况,对于两边为非对称结构,微波场辐射在量子点上可以导致自旋流而非零的总电流,给出了平行和反平行磁构型下的结果并进行了讨论;对于两边为对称结构结构,平行磁构型下,量子点上加微波场时自旋流和总电流均为零;在反平行磁构型下,量子点上加微波场可以导致自旋流而 关键词： 微波场 直接隧穿 量子点 泵流     

Shot noise in electron transport through a double quantum dot: a master equation approach

We study shot noise in tunneling current through a double quantum dot connected to two electric leads.We derive two master equations in the occupation-state basis and the eigenstate basis to describe the electron dynamics.The approach based on the occupation-state basis,despite being widely used in many previous studies,is valid only when the interdot coupling strength is much smaller than the energy difference between the two dots.In contrast,the calculations using the eigenstate basis are valid for an arbitrary interdot coupling.Using realistic model parameters,we demonstrate that the predicted currents and shot-noise properties from the two approaches are significantly different when the interdot coupling is not small.Furthermore,properties of the shot noise predicted using the eigenstate basis successfully reproduce qualitative features found in a recent experiment.     

Spin current in double quantum dot

We have studied the dynamical behaviours of two electrons confined in a double quantum dot driven by rotating magnetic fields in terms of the theory of Lewis－Riesenfeld Hermitian invariants for the explicitly time-dependent Hamiltonian. The coherent spin oscillations in the dot provide a generation source for spin current. Exact solutions obtained allow us to investigate the dynamical properties of the spin localization for various initial localized states.     

Thermoelectric effects through weakly coupled double quantum dots

The electrical conductance, the thermal conductance, the thermopower and the thermoelectrical figure of merit are analyzed through a double quantum dot system weakly coupled to metal electrodes, by means of density matrix approach. The effects of interdot tunneling, intra- and interdot Coulomb repulsions on the figure of merit are examined. Results show that increase of interdot tunneling gives rise to a reduction in figure of merit. On the other hand, increase of Coulomb repulsion results in enhancement of figure of merit because of reduce of bipolar effect.     

Kondo transport through a quantum dot coupled with side quantum-dot structures

This paper investigates Kondo transport properties in a quadruple quantum dot (QD) based on the slave-boson mean field theory and the non-equilibrium Green’s function.In the quadruple QD structure one Kondo-type QD sandwiched between two leads is side coupled to two separate QD structures:a single-QD atom and a double-QD molecule.It shows that the conductance valleys and peaks always appear in pairs and by tuning the energy levels in three side QDs,the one-,two-,or three-valley conductance pattern can be obtained.Furthermore,it finds that whether the valley and the peak can appear is closely dependent on the specific values of the interdot couplings and the energy level difference between the two QDs in the molecule.More interestingly,an extra novel conductance peak can be produced by the coexistence of the two different kinds of side QD structures.     

Entanglement of two interacting electrons in a driven double quantum dot structure

We study the case where two interacting electrons in a double quantum dot structure are driven resonantly by a pulsed electromagnetic field and present a method that is based on controlled rotation for the creation of maximally entangled two-electron states.     

Multi-color tunneling quantum dot infrared photodetectors operating at room temperature

Quantum dot structures designed for multi-color infrared detection and high temperature (or room temperature) operation are demonstrated. A novel approach, tunneling quantum dot (T-QD), was successfully demonstrated with a detector that can be operated at room temperature due to the reduction of the dark current by blocking barriers incorporated into the structure. Photoexcited carriers are selectively collected from InGaAs quantum dots by resonant tunneling, while the dark current is blocked by AlGaAs/InGaAs tunneling barriers placed in the structure. A two-color tunneling-quantum dot infrared photodetector (T-QDIP) with photoresponse peaks at 6 μm and 17 μm operating at room temperature will be discussed. Furthermore, the idea can be used to develop terahertz T-QD detectors operating at high temperatures. Successful results obtained for a T-QDIP designed for THz operations are presented. Another approach, bi-layer quantum dot, uses two layers of InAs quantum dots (QDs) with different sizes separated by a thin GaAs layer. The detector response was observed at three distinct wavelengths in short-, mid-, and far-infrared regions (5.6, 8.0, and 23.0 μm). Based on theoretical calculations, photoluminescence and infrared spectral measurements, the 5.6 and 23.0 μm peaks are connected to the states in smaller QDs in the structure. The narrow peaks emphasize the uniform size distribution of QDs grown by molecular beam epitaxy. These detectors can be employed in numerous applications such as environmental monitoring, spectroscopy, medical diagnosis, battlefield-imaging, space astronomy applications, mine detection, and remote-sensing.     

Quantum control of two interacting electrons in a coupled quantum dot

Quantum-state engineering, i.e. active manipulation over the coherent dynamics of suitable quantum-mechanical systems, has become a fascinating prospect of modern physics. Here we discuss the dynamics of two interacting electrons in a coupled quantum dot driven by an external electric field. The results show that the two quantum dots can be used to prepare a maximally entangled Bell state by changing the strength and duration of an oscillatory electric field. Different from the suggestion made by Loss \textit et al (1998 Phys. Rev. A 57 120, the present entanglement involves the spatial degree of freedom for the two electrons. We also find that the coherent tunnelling suppression discussed by Grossmann \textit et al (1991 Phys. Rev. Lett. 67 516 persists in the two-particle case: i.e. two electrons initially localized in one dot can remain dynamically localized, although the strong Coulomb repulsion prevents them from behaving so. Surprisingly, the interaction enhances the degree of localization to a large extent compared with that in the non-interacting case. This phenomenon is referred to as the Coulomb-enhanced dynamical localization.     

四端双量子点系统中的自旋和电荷能斯特效应

基于非平衡态格林函数方法,理论研究了与四个电极耦合的双量子点系统中的自旋和电荷能斯特效应,考虑了不同电极的磁动量结构和量子点内以及量子点间电子的库仑相互作用对热电效应的影响.结果表明铁磁端口中的磁化方向能够有效地调节能斯特效应:当电极1和电极3中的磁化方向反平行排列时,通过施加横向的温度梯度,系统中将会出现纯的自旋能斯特效应;当电极4从普通金属端口转变为铁磁金属端口时,将同时观测到电荷和自旋能斯特效应.研究发现,能斯特效应对于铁磁电极极化强度的依赖程度较弱,但对库仑排斥作用十分敏感.在量子点内和点间库仑排斥作用的影响下,自旋及电荷能斯特系数有望提高两个数量级.     

Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current–voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.     

弱耦合GaAs/AlGaAs/InGaAs双势阱隧穿结构的磁隧穿特性研究

研究了低温(15 K)条件下弱耦合GaAs/AlGaAs/InGaAs双势阱结构的纵向磁隧穿特性. 研究表明,器件在零偏压下处于共振状态. 通过分析不同偏压下的磁电导振荡曲线,可以得到双量子阱中的基态束缚能级随偏压的变化规律,从而可以确定隧穿电流峰对应的隧穿机制. 所得结果可为弱耦合双量子点器件的制备提供基础. 关键词： 双量子阱 隧穿结构 磁电导振荡