Electronic structure of Sr2FeMoO6

We have analyzed the unusual electronic structure of Sr2FeMoO6 combining ab initio and model Hamiltonian approaches. Our results indicate that there are strong enhancements of the intra-atomic exchange strength at the Mo site as well as the antiferromagnetic coupling strength between Fe and Mo sites. We discuss the possibility of a negative effective Coulomb correlation strength ( U(eff)) at the Mo site due to these renormalized interaction strengths.     

A theory of tunnel magnetoresistance through a magnetic grain boundary

We study tunnel magnetoresistance (TMR) through grain boundaries where tunneling electrons interact with localized spins via ferromagnetic exchange interaction. It is shown that spin–flip tunneling due to the exchange interaction gives rise to appreciable effects on TMR, and that TMR increases almost linearly with increasing magnetic field.     

Electronic and magnetic structures of Sr(2)FeMoO(6)

We have investigated the electronic and magnetic structures of Sr(2)FeMoO(6) employing site-specific direct probes, namely x-ray absorption spectroscopy with linearly and circularly polarized photons. In contrast to some previous suggestions, the results clearly establish that Fe is in the formal trivalent state in this compound. With the help of circularly polarized light, it is unambiguously shown that the moment at the Mo sites is below the limit of detection (<0.25 mu(B)), resolving a previous controversy. We also show that the decrease of the observed moment in magnetization measurements from the theoretically expected value is driven by the presence of mis-site disorder between Fe and Mo sites.     

Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier.     

Pulsed laser deposition of Sr2FeMoO6 thin films

The effect of various deposition conditions and after-growth protocols on the magnetic and transport properties of Sr₂FeMoO₆ films has been explored. It is found that the saturation magnetization and the magnetoresistance (MR) are dominated by the degree of cationic order, and the strain effects are clearly evidenced in a lower T_C. The after-growth annealing of the films and the deposition of a buffer layer has been found to relax the film strains. This translates into a clear increase of the measured low-field magnetoresistance ratios.     

Giant magnetoresistance effect in a magnetic barrier nanostructure

The giant magnetoresistance (MR) effect is theoretically studied in a magnetically modulated two-dimensional electron gas. We find that the significant transmission difference for electron tunneling through parallel and antiparallel magnetization configurations results in a considerable MR effect. We also find that the MR ratio strongly depends on the magnetic strength and the distance between the left edges of two ferromagnetic strips as well as the temperature.     

晶界对庞磁电阻颗粒薄膜的磁学和输运性能的影响

采用脉冲电子束沉积技术，在Si(100)单晶衬底上沉积庞磁电阻La_0.67Ca_0.33MnO₃颗粒薄膜，并对它的磁学性能和电学输运性能进行了表征.研究晶界对庞磁电阻薄膜的物理性能的影响，结果表明，晶界的存在使得晶粒之间的耦合变弱，在变温磁化过程中表现出团簇玻璃态行为，金属—绝缘体转变温度(T_p)远远低于铁磁—顺磁转变温度(T_c).低温下电子输运具有弱局域化行为.在低磁场下，晶界的存在掩盖了La_0.67Ca_0.33MnO₃的本征磁电阻行为. 关键词： 脉冲电子束沉积 晶界 磁学和电学输运性能 庞磁电阻     

Bulk—like contribution of tunnel magnetoresistance in magnetic tunnel junctions

We have demonstrated that the bulk-like contribution to tunnelling magnetoresistance (TMR) exists in the magnetic tunnel junctions, and is determined by the tunnelling characteristic length of the ferromagnetic electrodes. In the experiment, a wedge-shaped CoFe layer is inserted at the interface between the insulating barrier and the reference electrode. It is found that TMR ratio increases from 18% without CoFe layer to a saturation value of 26.5% when the CoFe thickness is about 2.3 nm. The tunnelling characteristic length, l_{tc}, can be obtained to be about 0.8 nm for CoFe materials.     

Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer

We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction and the two-step magnetization reversal process in this material.     

Sr2FeMoO6: A Prototype to Understand a New Class of Magnetic Materials

We propose a new mechanism to explain the magnetic structure of a recently discovered magnetoresistive double perovskite oxide system, Sr₂FeMoO₆, with the help of detailed experimental and theoretical results. This model, based on a strong antiferromagnetic coupling between the local moment and the charge carriers arising from local hopping interactions, can give rise to ferromagnetic metallic as well as ferromagnetic insulating ground states. The relevance of this mechanism in understanding the magnetism in dilute magnetic semiconductors such as Ga_{1 − x} Mn _x As, is also discussed.     

Hole doping effects in (Sr2-xNax)FeMoO6 double perovskite

Hole-doped double perovskite compounds (Sr,Na)₂FeMoO₆ with the Na content of x=0,0.02,0.03,0.07 and 0.17 have been synthesized by sol–gel method. Effects of hole doping on the crystal structure and magnetic properties of Sr₂FeMoO₆ have been investigated by means of X-ray powder diffraction (XRD) and magnetic measurements. The XRD pattern indicates that all the samples are of single phase and belong to the space group I4/m. Due to the smaller ionic radius of Na⁺ than that of Sr²⁺ ions, the lattice constants and unit cell volume of the compound decrease slightly with x. The degree of cation ordering in the Na-doped Sr₂FeMoO₆ compounds shows a non-monotonic variation with the doping level, increasing from x=0 to x=0.03 and decreasing slightly with further increase of the doping. In contrast to the composition dependence of the degree of ordering, the Curie temperature of the compound decreases at low doping level and increases at high doping level. The saturation magnetization of the compound increases with x for x<0.17. Similar to the electron-doped Sr₂FeMoO₆, provided that the doped hole enters selectively the spin-down band, the variation of the saturation magnetization can be explained in light of the ferrimagnetic model (FIM). PACS 61.72.Ww; 75.50.-y; 75.30.Cr; 75.50.Gg     

Chemical solution processing and properties of Sr2FeMoO6 thin films

Crack-free and oriented Sr₂FeMoO₆ (SFMO) thin film with double perovskite structure has been fabricated by the chemical solution deposition (CSD) method. A homogeneous and stable SFMO precursor solution was successfully prepared by controlling the reaction of starting metal-organic compounds in a mixture solvent of 1-propanol and 2-methoxyethanol. SFMO thin films with c-axis preferred orientation could successfully be synthesized on MgO (0 0 1) and SrTiO₃ (0 0 1) substrates by optimizing the several processing conditions. SFMO thin film prepared on SrTiO₃ (0 0 1) showed a magnetoresistance effect at a low magnetic field.     

高压下Sr2FeMoO6的电学性质与相变

 采用电阻和电容测量方法,在金刚石压砧装置上研究了Sr₂FeMoO₆多晶粉末在室温下和20 GPa内的电阻、电容和压力的关系。实验结果表明,样品的电阻和电容在约2.1 GPa的压力下都产生了突然的变化,发生了金属化相变。这些变化可能是由高压下Sr₂FeMoO₆的电子结构相变引起的。     

Fe位Al掺杂对Sr2FeMoO6磁结构和磁输运性质的影响

研究了Sr2Fe1-xAlxMoO6(0≤x≤0.30)系列多晶样品的磁学和输运性质.室温X射线衍射谱图的精修结果显示Al3+掺杂没有改变样品的晶格结构,但提高了Sr2FeMoO6晶格的阳离子有序度.5K时样品的磁化曲线说明平均单位分子饱和磁矩随着Al含量的增加而下降,但平均单位Fe离子磁矩却逐渐提高.磁化曲线的拟合结果显示样品内反铁磁相互作用对饱和磁矩的贡献随着Al含量的增加而下降,说明一定量的Fe离子被Al替代后,抑制了样品内Fe-O-Fe反相边界的形成,从而提高了Sr2FeMoO6晶格的阳离子有序度和平均单位Fe离子磁矩.对饱和磁矩的分析表明非磁性Al3+离子掺杂会形成无磁相互作用的Mo-O-Al-O-Mo区,可以将原来较大的Mo-O-Fe亚铁磁区分割成许多小的区域,并且使这些亚铁磁区间的磁耦合作用变弱,从而提高了低场磁电阻效应.阳离子有序度的提高使来源于自旋相关电子在反相边界处散射的高场磁电阻明显降低,导致了样品的磁电阻在x=0.15时达到了最大值.     

Ultrafast spin dynamics and critical behavior in half-metallic ferromagnet: Sr2FeMoO6

We propose a measurement setup for detecting quantum noise over a wide frequency range using inelastic transitions in a tunable two-level system as a detector. The frequency-resolving detector consists of a double quantum dot which is capacitively coupled to the leads of a nearby mesoscopic conductor. The inelastic current through the double quantum dot is calculated in response to equilibrium and nonequilibrium current fluctuations in the nearby conductor, including zero-point fluctuations at very low temperatures. As a specific example, the fluctuations across a quantum point contact are discussed.     

具有人工晶界的Sr2FeMoO6粉末磁电阻的温度特性

利用固相反应合成了纯相的Sr2FeMoO6多晶块体，并通过机械球磨方法引入了人工晶界，研究了具有此种晶界的Sr2FeMoO6粉末磁电阻的温度特性．X射线衍射分析表明，机械球磨过程没有改变Sr2FeMoO6的晶体结构，但却在晶粒间界处引入了SrMoO4绝缘相，其量随着球磨时间的增加而增加．不同磁场下的磁电阻测量结果表明，由于一定量SrMoO4绝缘相的存在，晶粒间的绝缘隧穿势垒得到加强，更有利于自旋极化电子在晶粒间的隧穿，从而提高了Sr2FeMoO6多晶粉末的低温磁电阻值．然而随着温度的升高，磁电阻值迅速下降，表现出较强的温度依赖关系．这种现象是由于随着温度的升高，电子在晶界局域态间的非弹性跳跃逐渐增强引起的，而晶界局域态是由在晶界附近的大量缺陷构成．分析表明，晶界状态对Sr2FeMoO6多晶粉末磁电阻的温度特性有十分重要的影响．     

Impurity-assisted interlayer exchange coupling across a tunnel barrier

Localized impurity or defect states in the insulating barrier layer separating two ferromagnetic films affect dramatically the interlayer exchange coupling (IEC), making it significantly stronger compared to perfect barriers. We demonstrate that the impurity-assisted IEC becomes antiferromagnetic if the energy of the impurity states matches the Fermi energy and that the coupling strength decreases with temperature. These results explain available experimental data on the IEC across tunnel barriers.     

Spin-polarized current and tunnel magnetoresistance in heterogeneous single-barrier magnetic tunnel junctions

Current in heterogeneous tunnel junctions is studied in the framework of the parabolic conduction-band model. The developed model of the electron tunneling takes explicitly into account the difference of effective masses between ferromagnetic and insulating layers and between conduction subbands. Calculations for Fe/MgO/Fe-like structures have shown the essential impact of effective mass differences in regions (constituents) of the structure on the tunnel magnetoresistance of the junction.