Ab initio investigation of boron nanodevices: conductances of the different geometric conformations

Conductances of different geometric conformations of boron ribbon devices are calculated by the ab initio method. The I-V characteristics of three devices are rather different due to the difference in structure. The current of the hexagonal boron device is the largest and increases nonlinearly. The current of the hybrid hexagon-triangle boron device displays a large low-bias current and saturates at a value of about 5.2 μA. The current of the flat triangular boron flake exhibits a voltage gap at low bias and rises sharply with increasing voltage. The flat triangular boron device can be either conducting or insulating, depending on the field.     

A scheme for a topological insulator field effect transistor

We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.     

Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments

The interesting InGaP/GaAs heterojunction bipolar transistors (HBTs) with different surface passivations on the base surface are fabricated and studied. Experimentally, the HBT device with sulfur treatment passivation displays the lowest offset voltage. However, the device with a 0.02 μm-thick emitter ledge structure reveals better transistor behaviors such as higher current gain and lower base surface recombination current. In addition, it also exhibits improved thermal stability. For the reliability test, the device with a 0.02 μm-thick emitter ledge structure shows the best performance. Therefore, from experimental results, the HBT device performance could be improved by appropriate base surface treatments, e.g., sulfur passivation and emitter ledge structure.     

Multilevel resistive switching performance of TiO2-based flexible memory prepared by low-temperature sol-gel method with UV irradiation

The flexible Ag/TiO₂/ITO/PET resistive switching memory is prepared by low-temperature sol-gel method with UV irradiation, and the simple method that combined the advantages of sol-gel method and low temperature can be applied to fabricate high-quality film. The flexible Ag/TiO₂/ITO/PET memory device displays good resistive behavior, for instance, the narrow distributions of switching voltages, good cycle endurance, and long retention time. Meanwhile, the multilevel resistance states of the device can be realized by controlling the compliance current or reset voltages, showing the potential of applications in neural networks and high-density storge. In addition, flexibility of the Ag/TiO₂/ITO/PET is studied, which exhibit good endurance and retention properties under bending condition. The I–V curves are replotted and fitted for analyzing the conductive mechanism of the device. The fitting results show that SCLC and Ohmic mechanism are main mechanisms of high resistance state and low resistance state respectively. The electrochemical and thermochemical modes are adopted to explain resistive switching behavior. Our results indicate the Ag/TiO₂/ITO/PET memory has potential application in wearable and foldable electronics.     

Study on the current bistability and hysteresis in resonant-tunneling structures

We present a time-dependent quantum-kinetic study for the non-equilibrium electron transport properties of double-barrier resonant-tunneling devices. The approach is based on a self-consistent solution of Wigner equation and Poisson equation. We find intrinsic current fluctuations around the current turning point. These instabilities lead to three current irreversible regions, two current hystereses and one small inverse current change in the valley position of current, for the forward and backward bias sweep. The bias step applied on the device affects the width of each current irreversible regions and the current peak height of the middle region.     

平面三维显示技术的研究现状

平面三维显示技术是近年来最新出现的虚拟现实显示技术,其最大的特点是观察者无需使用任何辅助附加设备,直接用肉眼就可看到屏幕上显示的三维图像。为推进三维显示技术的发展,进一步研究了视差立体成像原理,并据此介绍几种平面三维显示方法及其工作原理,包括障栅立体显示、微柱透镜阵列立体显示、偏振片立体显示和基于微柱透镜立体显示原理的多视点系统,阐述并分析了系统的优缺点。以日本三洋公司的四视角立体显示装置、南京大学的多视点三维显示系统和NEC液晶科技的HDDP三维显示系统为例,描述了国内外该项技术近期的研究现状,分析了存在的技术难点,展望了该应用领域的发展前景。     

Tunneling conductance oscillations in spin–orbit coupled metal–insulator–superconductor junctions

The tunneling conductance for a device consisting of a metal–insulator–superconductor (MIS) junction is studied in presence of Rashba spin–orbit coupling (RSOC) via an extended Blonder–Tinkham–Klapwijk formalism. We find that the tunneling conductance as a function of an effective barrier potential that defines the insulating layer and lies intermediate to the metallic and superconducting electrodes, displays an oscillatory behavior. The tunneling conductance shows high sensitivity to the RSOC for certain ranges of this potential, while it is insensitive to the RSOC for others. Additionally, when the period of oscillations is an odd multiple of a certain value of the effective potential, the conductance spectrum as a function of the biasing energy demonstrates a contrasting trend with RSOC, compared to when it is not an odd multiple. The explanations for the observation can be found in terms of a competition between the normal and Andreev reflections. Similar oscillatory behavior of the conductance spectrum is also seen for other superconducting pairing symmetries, thereby emphasizing that the insulating layer plays a decisive role in the conductance oscillations of a MIS junction. For a tunable Rashba coupling, the current flowing through the junction can be controlled with precision.     

Polymeric, electrically tunable diffraction grating based on artificial muscles

We demonstrate a low-cost, electrically tunable diffraction grating that is driven by a dielectric elastomer actuator. The angular tuning range of the polymer-based device is up to 118 mrad for the first diffracted order. The achievable grating period change of 32% is an improvement by more than a factor of 150 compared with existing analog tunable diffraction gratings based on hard materials. We show that in combination with a white light source, the presented diffraction grating can be used as a wavelength-adjustable luminous source. Such an illuminant has a potential application in inexpensive color displays that could reproduce all perceivable colors.     

中能X光机触发系统

介绍了中能X光机装置触发系统研制和相关实验结果,触发系统包括主机6个支路激光开关的触发和主机放电的触发。其中6个支路的触发由6台YAG四倍频激光器完成,主机放电电触发系统由1台YAG四倍频激光器来触发。实验结果表明:每台激光器出光时间抖动σ小于等于0.3 ns,激光开关导通延迟时间约25 ns,抖动σ小于等于1.2 ns,电触发系统中激光与触发器输出电压之间的时间抖动σ为0.5 ns,匹配负载上电压大于120 kV,前沿约28 ns,脉宽150 ns。中能X光机在杆箍缩二极管负载上获得最大输出为4.2 MV/100 kA的电脉冲,电压脉冲半高宽约55 ns,输出的X射线时间抖动σ为3.4 ns。实验结果表明触发系统具备对6个支路精确调节和控制的能力,确保了中能X光机装置的高可靠性。     

桥丝式电点火头感应电流的测试研究

用红外光纤分光法对桥丝式电点火头中的感应电流进行非接触式远程测量.从红外辐射理论和实验两方面证明该方法的可行性.对桥丝产生的弱信号红外辐射进行光调制和锁相放大,通过探测器测得桥丝式电点火头辐射的中、近红外光电压的比值,得到对应的桥丝微弱的感应电流值,在电流值较大时,测量误差可小于0.015 4 mA.该红外光纤分光探测系统不仅解决了外界电磁干扰的问题,还很好地减小了人为操作的误差.
     

高效率高亮度红色有机电致磷光器件

在一种红色有机电致磷光器件中采用双(2-甲基-8-喹啉)4-联本氧基铝[bis(2-methyl-8-quinolinato)4-phenylphenoJate aluminum,BAlq]为空穴和激子阻挡层,得到了效率、亮度和色度俱佳的发光器件。器件最高亮度为10362cd／m^2,最高外量子效率为7．0％,器件色坐标[Commission Internationale de l’Eclairage(C1E)coordinates]为(0．672,0．321)。另外在大电流密度100mA／cm^2下,量子效率仍有4．3％。该器件性能指标基本能够满足彩色动态显示中对红色发光的要求。     

A frequency-locked, high power, X-band dielectric Cerenkovmaser

A high-power frequency-locked dielectric Cerenkov maser oscillator is presented. The device consists of an annular electron beam traveling down a dielectric-lined waveguide (wall radius 1.74 cm, liner thickness 2-3 mm, linear ∈=10). A 100 kW input signal is injected into the drift tube between the diode and liner, through a rectangular TE₁₀ to cylindrical TM₀₁ mode converter. When operated with a beam current of 500 A and a total output power of 13 MW, the device displays no RF quenching through the full width of the 100 ns beam pulse. Two higher current cases with power as high as 280 MW but severe RF quenching are presented. The results are compared with linear theory, and quenching mechanisms are discussed     

2.9THz束缚态向连续态跃迁量子级联激光器研制

采用气源分子束外延技术生长了GaAs/AlGaAs束缚态向连续 态跃迁的太赫兹量子级联激光器材料, 基于半绝缘等离子体波导工艺制作了太赫兹量子级联激光器. 测量了激光器的发射光谱和功率-电流-电压关系曲线, 研究了器件的激光特性. 器件激射频率约2.95 THz, 脉冲模式下, 最高工作温度为67 K. 连续波模式下, 阈值电流密度最低为230 A/cm², 最大光输出功率1.2 mW, 最高工作温度为30 K. 关键词： 太赫兹 量子级联激光器 分子束外延 波导     

Solution-deposited carbon nanotube layers for flexible display applications

We have investigated two possible fields of application for carbon nanotube (CNT) networks in flexible displays. Transparent and conductive layers of CNTs were spray coated onto glass and plastic substrates. The spectral transmission of the produced layers is almost even for all wavelengths in the visible regime. A sheet resistance of 400 Ω/□ at a transmittance of 80% was achieved.Thin-film transistors (TFT) were created on silicon wafers and glass substrates using low-density CNT networks as a semiconducting layer. The process used for device fabrication on glass substrates is fully compatible to application on plastic foils. The transistors reach on/off ratios of more than five orders of magnitude and show device charge carrier mobilities in the order of 1 cm²/Vs. These values promise an application in active matrix liquid crystal displays (AMLCD). Issues that need to be addressed are the homogeneity and reproducibility of the device properties.     

Ion Effects on the Performance of the Single-Layer Organic Light-Emitting Devices Based on Adding Salt Additives

The single-layer organic light-emitting devices provide a promising way for low-cost, large-area displays. Iridium (III) complex may play an important role to achieve this target due to its unique ionic characteristics. To achieve high-performance single-layer devices, blending the salt additives into the active layer is an effective strategy. However, the effects of different cation and anion additives on the device's performance are still unclear. Herein, the single-layer light-emitting devices are fabricated by using solution-processed iridium (III) complex mixed with various molecular salts. It is implied in the results that the improvement of the device luminescence and recombination efficiency is owing to the enhanced carrier injection and improved carrier balance in the emitting layer by the ion-additive-induced electrical double layer at the interface. The smaller cation can improve the carrier injection of the device more efficiently due to the stronger ion mobility and the anion with the smaller association coefficient shows a better device performance since the stronger dissociation ability of the ions can lead to a better ion migration ability. In addition, the introduction of poly (methyl methacrylate) into the active film can improve the single-layer device performances by reducing leak current in bulk.     

Multiple wavelength electroluminescence and laser generation in p-i-n resonant tunneling heterostructures

We report a design and electroluminescence (EL) investigation of a p-i-n resonant tunneling device based on an Al_0.4Ga_0.6As/GaAs graded-index waveguide heterostructure. The intrinsic region of the structure consists of a quantum well (QW) surrounded by multiple barrier energy filters providing simultaneous resonant occupation of electron and heavy-hole second excited subbands in the QW. Several peaks are observed in the EL spectra, confirming occupation of the excited subbands. The EL efficiency displays a resonant behavior accompanied by an S-shaped negative differential resistance region in the voltage–current characteristic. Current bistability is demonstrated, leading to bistability in the EL and laser generation spectra.     

Tunneling through two single molecular magnets in series arrangement junction in parallel/antiparallel situations

We investigate the spin-dependent tunneling transport in a heterostructure with two single molecular magnets (SMMs). The tunneling magnetoresistance (TMR) and negative differential conductance due to the strong resonant tunneling in the junction are demonstrated by the master equation approach. At low bias voltage, the device presents low/high resistant states with the initial states of the single molecular magnets parallel/antiparallel. Strong Coulomb repulsive interaction suppresses the current greatly in antiparallel situation. At high voltage, the middle system containing two SMMs tends to be non-polarized, and acts like ordinary quantum dots.     

Luneburg lens approach to nuclear rainbow scattering

The physical interpretation of nuclear rainbow scattering within the frame of the optical model is critically investigated. Starting from the properties of the Luneburg lens, a gradient index device that displays refractive features similar to those of the nuclear potential, important differences between the mechanisms producing the nuclear and optical rainbows are pointed out.     

Superradiant dissipative tunneling in a double p–i–n semiconductor heterostructure with thermal injection of electrons

We propose a semiconductor device with two p–i–n junctions maintained at two different temperatures. When the current injected in the device due to this temperature difference exceeds a threshold value, a superradiant field is created in the first gate that induces an additional current in the second gate. The injection current is amplified by this reaction loop. In this way, the heat flow between the two junctions is partially transformed in superradiant power.     

忆阻器单阻态下的记忆电容行为及多态特性

采用供体-受体类型的共聚物构建了Al/共聚物/ITO结构的有机记忆器件,并对其电流-电压(I-V)和电容-电压(C-V)特性进行了研究.结果表明:器件不仅表现出明显的记忆电阻特征,而且在单个电阻状态下还存在记忆电容行为,使器件呈现出两种电阻状态和与之对应的四种电容状态,具有电阻和电容的双参量记忆能力.在此基础上对器件的电容开关行为进行了电压幅值的调制,使器件出现了更多的电容状态,为多级存储的实现提供了一条有效途径.最后通过引入分子内部极化算符,建立了记忆电阻和记忆电容的关联性,给出了描述器件双参量多状态特征的矩阵模型.