Double-occupancy probability and entanglement of two holes in double Ge/Si quantum dots

We have calculated the exchange energy, double occupation probability of the lowest singlet state, and degree of entanglement of two holes in vertically coupled double Ge/Si quantum dots. We determined the conditions on which the exchange coupling is large enough for a fast swap operation in quantum computation and the double-occupancy probability is still low, thus maximizing the entanglement for a small computation error. We found that both the degree of entanglement and double-occupancy probability for quantum dots with different dot size collapse onto universal, size independent curves when plotted as a function of singlet-triplet splitting.     

Thermal conductance in a quantum waveguide modulated with quantum dots

We investigate the thermal conductance in a quantum waveguide modulated with quantum dots at low temperatures. It is found that the thermal conductance sensitively depends on the geometrical parameters of the structure and boundary conditions. When the stress-free boundary conditions are applied in the structure, the universal quantum of thermal conductance can be found regardless of the geometry details in the limit T→0. For an uniform quantum waveguide, a thermal conductance plateau can be observed at very low temperatures; while for the quantum waveguide modulated with quantum dots, the plateau disappears, instead a decrease of the thermal conductance can be observed as the temperature goes up in the low temperature region, and its magnitude can be adjusted by the radius of the quantum dot. Moreover, it is found that the quantum waveguide with two coupling quantum dots exhibits oscillatory decaying thermal conductance behavior with the distance between two quantum dots. However, when the hard-wall boundary conditions are applied, the thermal conductance displays different behaviors.     

Sb2S3 quantum dots: diffusion‐controlled growth and characterization

The quantum dots of antimony trisulphide, a potential semiconductor for various applications, are grown in glass matrix for the first time and are characterized by various techniques. The dependence of the average dot size on growth parameters like growth temperature and time is systematically studied for the dot size range of 5–80 nm. The linear blue shift of band gap of dots with inverse square of dot size clearly indicates the typical behavior of quantum dots in a strong quantum confinement regime. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of InGaAs-capped InAs quantum dots characterized by Atomic Force Microscope and Scanning Electron Microscope

Atomic force microscopy (AFM) is typically used to measure the quantum dot shape and density formed by lattice mismatched epitaxial growth such as InAs on GaAs. However, AFM images are distorted when two dots are situated in juxtaposition with a distance less than the AFM tip width. Scanning electron Microscope (SEM) is much better in distinguishing the dot density but not the dot height. Through these measurements of the growth of In_xGa_1-xAs cap layer on InAs quantum dots, it was observed that the InGaAs layer neither covered the InAs quantum dots and wetting layer uniformly nor 100% phase separates into InAs and GaAs grown on InAs quantum dots and wetting layer, respectively.     

Charge Reconfiguration in Isolated Quantum Dot Arrays

A high level of tunability and control over arrays of quantum dots are key ingredients toward the goal of scalable‐based qubit architectures. Increasing array size simultaneously increases the parameter space and therefore the tuning complexity. The electron reconfiguration behavior of quantum dot arrays isolated from the electron reservoirs is studied experimentally. Isolating a quantum dot array from the reservoirs does not only enable a high degree of control over the tunnel couplings but at the same time drastically simplifies the stability diagrams for small numbers of electrons trapped in the array. Experimental results on double, triple, and quadruple quantum dot arrays are presented and complementary model calculations allow the identification of all transitions observed in the experiment. Highly tunable long‐range transitions are observed in isolated triple quantum dots and evidence of higher‐order cotunneling is found for the quadruple quantum dot array.     

Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state

Density of states is studied by a ballistic electron emission microscopy/spectroscopy on self-assembled InAs quantum dots embedded in GaAs/AlGaAs heterostructure prepared by metal–organic vapor phase epitaxy. An example of integral quantum dot density of states which is proportional to superposition of a derivative of ballistic current–voltage characteristics measured at every pixel (1.05 nm×1.05 nm) of quantum dot is presented. For the two lowest observed energy levels of quantum dot (the maxima in density of states) the density of states is mapped and correlated with the shape of quantum dot. It was found that prepared quantum dots have a few peaks on their flatter top and a split of the lowest energy level can be observed. This effect can be explained by inhomogeneous (nonuniform) stress distribution in the examined quantum dot.     

Absorption spectra of small semiconductor quantum dots

A density matrix approach has been employed to study analytically the absorption spectra of small semiconductor quantum dots under the strong confinement regime. The results are obtained for a single quantum dot (SQD) as well as for inhomogeneous distribution of quantum dots (IQDs) with Gaussian distribution of quantum dot sizes. A numerical analysis has been made for a SQD and IQDs in a CdS crystal with data taken from recent experimental work. A negative change in the absorption coefficient occurs in the shorter pump wavelength side of the spectrum due to the biexcitonic contribution. The wavelength at which crossover from positive to negative values of the change in absorption coefficient occurs is found to depend upon both the QD size as well as the excitation intensity. The results agree satisfactorily with the experimental observations in small CdS quantum dots.     

Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots

In this article we study the impact of the spin-orbit interaction on the electron quantum confinement for narrow gap semiconductor quantum dots. The model formulation includes: (1) the effective one-band Hamiltonian approximation; (2) the position- and energy-dependent quasi-particle effective mass approximation; (3) the finite hard wall confinement potential; and (4) the spin-dependent Ben Daniel-Duke boundary conditions. The Hartree-Fock approximation is also utilized for evaluating the characteristics of a two-electron quantum dot system. In our calculation, we describe the spin-orbit interaction which comes from both the spin-dependent boundary conditions and the Rashba term (for two-electron quantum dot system). It can significantly modify the electron energy spectrum for InAs semiconductor quantum dots built in the GaAs matrix. The energy state spin-splitting is strongly dependent on the dot size and reaches an experimentally measurable magnitude for relatively small dots. In addition, we have found the Coulomb interaction and the spin-splitting are suppressed in quantum dots with small height. Received 15 May 2001 / Received in final form 14 May 2002 Published online 13 August 2002     

Diagnostics of height distribution of InAs/GaAs quantum dot arrays by means of carbon tetrachloride treatment in vapor phase epitaxy conditions

A technique for determination of InAs quantum dots bimodal distribution has been developed. This technique is based on vapor-chemical etching of quantum dot arrays coated with thin GaAs layers and on combined investigation of the morphology and photoluminescence spectra of etched quantum-size structures. It has been shown that, in some growth modes of quantum-size heterostructures by metal-organic vapor phase epitaxy, bimodal arrays of large and small quantum dots are formed. The surface concentration of large and small dots has been established to be about 2 × 10⁹ and 3 × 10¹⁰ cm⁻², respectively.     

Geometric phase of an open double-quantum-dot system detected by a quantum point contact

We study theoretically the geometric phase of a double-quantum-dot(DQD) system measured by a quantum point contact(QPC) in the pure dephasing and dissipative environments, respectively. The results show that in these two environments, the coupling strength between the quantum dots has an enhanced impact on the geometric phase during a quasiperiod. This is due to the fact that the expansion of the width of the tunneling channel connecting the two quantum dots accelerates the oscillations of the electron between the quantum dots and makes the length of the evolution path longer.In addition, there is a notable near-zero region in the geometric phase because the stronger coupling between the system and the QPC freezes the electron in one quantum dot and the solid angle enclosed by the evolution path is approximately zero,which is associated with the quantum Zeno effect. For the pure dephasing environment, the geometric phase is suppressed as the dephasing rate increases which is caused only by the phase damping of the system. In the dissipative environment,the geometric phase is reduced with the increase of the relaxation rate which results from both the energy dissipation and phase damping of the system. Our results are helpful for using the geometric phase to construct the fault-tolerant quantum devices based on quantum dot systems in quantum information.     

Effect of the Semiconductor Quantum Dot Shell Structure on Fluorescence Quenching by Acridine Ligand

The main line of research in cancer treatment is the development of methods for early diagnosis and targeted drug delivery to cancer cells. Fluorescent semiconductor core/shell nanocrystals of quantum dots (e.g., CdSe/ZnS) conjugated with an anticancer drug, e.g., an acridine derivative, allow real-time tracking and control of the process of the drug delivery to tumors. However, linking of acridine derivatives to a quantum dot can be accompanied by quantum dot fluorescence quenching caused by electron transfer from the quantum dot to the organic molecule. In this work, it has been shown that the structure of the shell of the quantum dot plays the decisive role in the process of photoinduced charge transfer from the quantum dot to the acridine ligand, which is responsible for fluorescence quenching. It has been shown that multicomponent ZnS/CdS/ZnS shells of CdSe cores of quantum dots, which have a relatively small thickness, make it possible to significantly suppress a decrease in the quantum yield of fluorescence of quantum dots as compared to both the classical ZnS thin shell and superthick shells of the same composition. Thus, core/multicomponent shell CdSe/ZnS/CdS/ZnS quantum dots can be used as optimal fluorescent probes for the development of systems for diagnosis and treatment of cancer with the use of anticancer compounds based on acridine derivatives.     

Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy

GaSb nanostructures in GaAs, grown by metalorganic chemical vapor deposition, were studied with cross-sectional scanning tunneling microscopy. Three different samples were examined, containing a thin quantum well, a quantum well near the critical thickness for dot formation, and finally self-organized quantum dots with base lengths of 5–8 nm and heights of about 2 nm. The dots are intermixed with a GaSb content between 60% and 100%. Also small 3D and 2D islands were observed, possibly representing quantum dots in an early growth stage and quantum dot precursors. All GaSb layers exhibit gaps, which are indications of an island-like growth mode during epitaxy.     

Geometric Phase of Double Quantum Dot Qubits System with Coulomb Interaction

In quantum computing the geometric phase is a valuable tool to achieve fault tolerant. And quantum dot system is a candidate for constructing quantum processor. In this paper we investigate the geometric phase of a double qubits system interaction with a quantum point contact device. The qubits were constructed by two coupled double quantum dots systems. The coulomb interaction between the two subsystem have been considered. By using the definition which introduced by Tong, we calculate the geometric phases of each double quantum dots subsystem.     

Controlled phase gates based on two nonidentical quantum dots trapped in separate cavities

We propose a scheme for realizing two-qubit controlled phase gates on two nonidentical quantum dots trapped in separate cavities. In our scheme, each dot simultaneously interacts with one highly detuned cavity mode and two strong driven classical fields. During the gate operation, the quantum dots undergo no transition, while the system can acquire different phases conditional on different states of the quantum dots. With the application of the single-qubit operations, two-qubit controlled phase gates can be realized.     

量子点器件的三端电测量研究

利用三端电测量方法，研究了调制掺杂二维电子气结构的量子点器件输运特性.报道了可分别测量二维电子气电阻和量子点隧穿电阻的实验方法.实验结果表明：量子点的横向耦合控制了量子点器件在小偏压下的电输运特性. 关键词： 自组装量子点 二维电子气 量子隧穿 肖特基接触     

Quantum phase transition and Coulomb blockade effect in triangular quantum dots with interdot capacitive and tunnel couplings

The quantum phase transition and the electronic transport in a triangular quantum dot system are investigated using the numerical renormalization group method.We concentrate on the interplay between the interdot capacitive coupling V and the interdot tunnel coupling t.For small t,three dots form a local spin doublet.As t increases,due to the competition between V and t,there exist two first-order transitions with phase sequence spin-doublet-magnetic frustration phase-orbital spin singlet.When t is absent,the evolutions of the total charge on the dots and the linear conductance are of the typical Coulomb-blockade features with increasing gate voltage.While for sufficient t,the antiferromagnetic spin correlation between dots is enhanced,and the conductance is strongly suppressed for the bonding state is almost doubly occupied.     

Self-assembly Drives Quantum Dot Photoluminescence

Engineering the spectral properties of quantum dots can be achieved by a control of the quantum dots organization on a substrate. Indeed, many applications of quantum dots as LEDs are based on the realization of a 3D architecture of quantum dots. In this contribution, we present a systematic study of the quantum dot organization obtained on different chemically modified substrates. By varying the chemical affinity between the quantum dots and the substrate, the quantum dot organization is strongly modified from the 2D monolayer to the 3D aggregates. Then the photoluminescence of the different obtained samples has been systematically studied and correlated with the quantum dot film organization. We clearly show that the interaction between the substrate and the quantum dot must be stronger than the quantum dot–quantum dot interaction to avoid 3D aggregation and that these organization strongly modified the photoluminescence of the film rather than intrinsic changes of the quantum dot induced by pure surface chemistry.     

Size-dependent fine-structure splitting in self-organized InAs/GaAs quantum dots

A systematic variation of the exciton fine-structure splitting with quantum dot size in single quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from to as much as with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.