镁/钛离子注入对蓝宝石微结构和机械性能的影响（英文）

离子注入已被证明是改善蓝宝石光学和机械表面性能的一种可靠方法。本文选择不同能量和剂量的镁/钛离子注入蓝宝石。利用TRIM (Transport of Ion Matter)程序分析了镁/钛离子在蓝宝石晶体中的射程分布。利用拉曼光谱和掠入射X射线衍射分析了损伤层深度和微结构变化。离子注入结果显示,蓝宝石的纳米硬度、纳米划痕和红外性能等均呈现出可调节的特性。     

纳米金刚石薄膜的掺杂、表/界面调控及性能研究

本文综述了近年来国内外研究者在纳米金刚石薄膜的掺杂、导电性能、场发射性能和电化学性能等方面的工作,涉及化学气相沉积法制备n型纳米金刚石薄膜,离子注入掺杂纳米金刚石晶粒提高薄膜的n型导电性能,金属离子注入制备场发射性能良好的纳米金刚石薄膜,低剂量离子注入和晶粒表面氧终止态获得高迁移率n型电导,纳米金刚石/石墨烯复合结构的调控对其电学及电化学性能的影响,以及硼掺杂金刚石薄膜电极的微结构和电化学性能研究等。综合分析发现,晶粒掺杂和表界面协同调控可以提升薄膜的电学性能、场发射性能及电化学性能,为纳米金刚石薄膜在纳米电子器件、电化学电极等领域的应用提供了理论基础。     

Ti离子注入对ZnO纳米棒阵列性能的影响

本文研究了Ti离子注入对ZnO纳米棒阵列结构、形貌、光学特性和疏水性的影响.XRD测试表明注入前后ZnO纳米棒均为六方纤锌矿晶体结构.然而,随着对ZnO纳米棒阵列注入剂量的增加,样品沿(002)晶面优先生长的趋势降低,而且当注入剂量达到5×1017/cm2时,甚至出现ZnTiO3( 104)晶面衍射峰,说明了这种物质的存在,而后面的XPS表征也进一步证明了Ti-Zn-O化学键的存在.样品形貌测试表明,离子注入后由于受刻蚀和溅射的作用,不仅使得ZnO纳米棒表面形貌发生了很大的变化,透光率也显著下降.离子注入后ZnO纳米棒表面疏水性受形貌变化的影响也发生了改变,使得其疏水性增强,当Ti离子注入量为1×1017/cm2时ZnO纳米棒表面接触角达到了151.4°.总之,离子注入作为一种较新颖的表明改性方法,通过对ZnO纳米棒阵列改性处理可以明显扩展其潜在应用价值.     

蓝宝石单晶纳米压痕蠕变性能研究

蓝宝石单晶的蠕变性能对结构失效行为有很大的影响.本文采用纳米压痕测试方法对蓝宝石单晶窗口材料的蠕变性能进行了测试与分析.分析表明,纳米压痕测试方法能够较为精确地测得蓝宝石单晶蠕变应力指数;不同的最大载荷对蓝宝石单晶的蠕变位移及蠕变应力指数没有明显的影响;蓝宝石单晶的蠕变位移及蠕变应力指数随着加载速率的减小分别减小和增大.     

c向蓝宝石单晶纳米压痕尺度效应研究

本文以c向蓝宝石单晶为对象采用纳米压痕方法测试了不同载荷下蓝宝石单晶的硬度与杨氏模量.分析表明,当载荷P=25±2 mN时出现了第一次位移突变现象,且位移突变量与最大压入载荷无关;试样的硬度与杨氏模量值随着压入深度的增大而减小,呈现出明显的压痕尺度效应;利用Nix-Gao尺度效应模型对测试数据进行了拟合,最终得出试样的硬度值与杨氏模量为30.956 GPa与382.316 GPa,与前人分析结果符合程度较高,证明Nix-Gao模型适用于蓝宝石单晶纳米压痕测试尺度效应的模拟与分析.     

纳米晶粉体加入量对CSBT陶瓷厚膜结构及性能的影响

采用粉末溶胶法和快速层层退火工艺,在Pt/Ti/SiO2/Si基片上制备了钙锶铋钛(CSBT)陶瓷厚膜.研究了纳米晶粉体加入量对钙锶铋钛陶瓷厚膜结构及性能的影响.结果表明:纳米晶粉体加入量在较宽的范围内可以制备出高质量的钙锶铋钛厚膜,厚膜的显微结构及铁电性能对粉末的加入量比较敏感,适当的加入量有利于促使厚膜晶粒的a轴择优取向,从而有利于膜的铁电性能.当粉末加入量为7.5 g/100 mL时,钙锶铋钛陶瓷厚膜晶粒出现a轴择优取向,剩余极化和矫顽场强分别为6.3 μC/cm2和57 kV/cm,具有较高的应用价值.     

煅烧条件对纳米TiO2/膨胀珍珠岩复合材料性能的影响

以膨胀珍珠岩为载体,TiOSO4为钛源,采用均匀沉淀法制备了纳米TiO2/膨胀珍珠岩复合材料,通过XRD、SEM和FT-IR对复合材料的TiO2晶体结构、表面性质和形貌进行分析表征.研究了煅烧温度和煅烧时间对复合材料中TiO2结晶和光催化性能的影响.结果显示在550℃下煅烧2h时,复合材料的光催化性能最高,此时TiO2为锐钛矿,晶粒尺寸为11.93 nm,对罗丹明溶液的降解率达到95;以上.复合材料具有良好的再生重复使用性能,经5次回收再利用后仍表现较高的光催化性能.     

TiO2有序分级结构的制备条件对其形貌和光电转换性能的影响

采用水热法,在钛箔表面成功制备出TiO2纳米线-纳米粒子分级结构光阳极.利用XRD、SEM等表征方法系统研究了制备条件对TiO2有序分级结构物相和微观形貌的影响,讨论了TiO2纳米结构和其光电转换性能之间的关系.结果表明:由于二次水热反应将初级TiO2纳米线阵列转变为纳米线-纳米粒子分级结构,使其比表面积和光电转换性明显提高.然而晶体生长时间过长或水热反应前驱液的浓度较高,都使得生长的纳米结构相互团聚在一起,从而减少其比表面积,降低光电转换性能.最佳的条件是第一步水热反应时间10 h,草酸钛钾溶液浓度0.0075mol/L,第二步水热反应时间6h,TiC14处理液浓度0.05 mol/L,分级结构的光电转换效率达到2.01;.     

离子注入技术在山东蓝宝石优化处理中的应用

本文报道了用离子(Be~(2+)和Ti~(4+))注入技术优化处理山东蓝宝石的工作.对处理前后样品一系列测试和实验的结果表明:(1)样品经过离子注入处理后,表面光泽明显增强,表面光洁度保持良好;(2)山东蓝宝石注入Be~(2+)后,颜色较处理前更深,说明Be~(2+)虽然不是致色离子,但可对蓝宝石颜色产生明显的影响;(3)注入Ti~(4+)后,山东蓝宝石的颜色变浅变艳了.进一步证明了山东蓝宝石的颜色深是由于Fe~(2+)浓度高,同时Ti~(4+)浓度相对太低所致,对今后山东蓝宝石乃至其它宝石的优化处理提供了新的思路和方法.     

CdS/TiO2纳米管阵列的制备及光催化性能

采用阳极氧化法在纯钛箔上制备出TiO2纳米管阵列,再通过化学水浴沉积法在TiO2纳米管阵列上负载CdS纳米颗粒.利用XRD、FESEM和UV-Vis分光光度计对样品的晶体结构、微观形貌和光学性质进行表征,并研究了不同含量CdS负载的复合薄膜对光催化降解气相苯性能的影响.结果表明,CdS纳米颗粒均匀沉积到TiO2纳米管阵列上,所制备的复合薄膜光吸收带边均扩展到了可见光区.CdS的修饰大幅度提高了TiO2纳米管阵列对气相苯的光催化降解活性,其中负载CdS质量分数为3;的TiO2纳米管阵列光催化活性最佳,80 min内对气相苯的去除率为80;,终产物CO2的浓度为640 mg/m3.     

The effect of Ti and O on the optical properties and microstructure of Ag nanocrystals formed in silica by sequential ion implantation

The implantation of Ti and O results in the modification of the silica with polarizable Ti ions. After annealing the Ti ions are incorporated with the O in the network to form a Ti–O–silicate layer. Subsequent implantation of Ag into this layer results in the formation of Ag metal nanocrystals with significantly modified optical properties compared to samples without the Ti ions. The incorporation of the Ti results in a shift in the wavelength of the surface plasmon resonance of the Ag nanocrystals and a change in the magnitude of the surface plasmon resonance absorption. The results are interpreted using effective medium theory.     

Optical properties of Ag nanocrystals in Sc and O sequentially implanted silica

The implantation of Sc and O results in the modification of the silica with polarizable Sc³⁺ ions. During annealing the Sc ions are incorporated with the O in the network to form a Sc-O-silicate layer. Subsequent implantation of Ag into this layer results in the formation of Ag metal nanocrystals with significantly modified optical properties compared to samples without the Sc ions. The size distribution of the Ag nanocrystals narrowed with increasing Sc concentration, due to the gradual elimination of a band of large Ag clusters. The incorporation of the Sc results in a shift in the wavelength of the surface plasmon resonance of the Ag nanocrystals and a change in the magnitude of the surface plasmon resonance absorption. The results are interpreted using effective medium theory.     

Sapphire shaped crystals for waveguiding,sensing and exposure applications

Second half of the XX century was marked by a rapid development of sapphire shaped crystal growth technologies, driven by the demands for fast, low-cost, and technologically reliable methods of producing sapphire crystals of complex shape. Numerous techniques of shaped crystal growth from a melt have been proposed relying on the Stepanov concept of crystal shaping. In this review, we briefly describe the development of growth techniques, with a strong emphasize on those that yield sapphire crystals featuring high volumetric and surface quality. A favorable combination of physical properties of sapphire (superior hardness and tensile strength, impressive thermal conductivity and chemical inertness, high melting point and thermal shock resistance, transparency to electromagnetic waves in a wide spectral range) with advantages of shaped crystal growth techniques (primarily, an ability to produce sapphire crystals with a complex geometry of cross-section, along with high volumetric and surface quality) allows fabricating various instruments for waveguiding, sensing, and exposure technologies. We discuss recent developments of high-tech instruments, which are based on sapphire shaped crystals and vigorously employed in biomedical and material sciences, optics and photonics, nuclear physics and plasma sciences.     

表面处理对蓝宝石衬底的影响

蓝宝石衬底是目前最为普遍的一种衬底材料,是生长GaN、ZnO材料最常用的衬底.本文用光学显微镜、原子力显微镜(AFM)和高分辨X射线双晶洐射对蓝宝石衬底进行了分析测试,系统研究了经过机械抛光、化学机械抛光、化学腐蚀等表面处理对蓝宝石衬底表面性能的影响.结果表明经过化学机械抛光随后再经腐蚀后的蓝宝石衬底的表面性能最好.     

c面白宝石衬底表面形貌对气相传输平衡法制备的γ-LiAlO2层质量的影响

采用气相传输平衡(VTE)技术,在(0001)面白宝石衬底表面上成功地制备出单相γ-LiAlO2层.研究了白宝石衬底表面形貌对γ-LiAlO2层质量的影响,发现白宝石衬底的表面粗糙度和退火处理是两个影响γ-LiAlO2层质量的重要因素.要制备高质量的γ-LiAlO2层,适度的表面粗糙度是恰当的.对白宝石衬底进行退火处理,γ-LiAlO2层的择优取向变差.并对其中可能的机理进行了探讨.     

MOCVD生长InxGa1-Xn薄膜的表征

本文利用MOCVD方法在(0001)取向的蓝宝石衬底上实现了不同生工艺条件下的InxGa-xN薄膜的制备,并通过XRD、SEM、AFM等测量分析方法系统研究了生长工艺参数对InxGa1-xN薄膜的组分和性质的影响.InxGa1-xN薄膜的制备包括蓝宝石衬底表面上GaN缓冲层的生长以及缓冲层上InxGa1-xN薄膜的沉积两个过程.通过对所制备InxGa1-xN薄膜的XRD、SEM、AFM分析发现,调节生长温度和TMGa的流量可以有效控制InxGa1-xN薄膜中In的组分,并且随着生长温度的升高,InxGa1-xN薄膜的表面缺陷减少.     

Supersmooth and modified surface of sapphire crystals: Formation,characterization, and applications in nanotechnologies

The results of studying the state of the surface of sapphire crystals by a complex of methods in different stages of crystal treatment are considered by an example of preparing sapphire substrates with a supersmooth surface. The possibility of purposefully forming regular micro- and nanoreliefs and thin transition layers using thermal and thermochemical impacts are considered. The advantages of sapphire substrates with a modified surface for forming heteroepitaxial CdTe and ZnO semiconductor films and ordered ensembles of gold nanoparticles are described. The results of the experiments on the application of crystalline sapphire as a material for X-ray optical elements are reported. These elements include total external reflection mirrors and substrates for multilayer mirrors, output windows for synchrotron radiation, and monochromators working in the reflection geometry in X-ray spectrometers. In the latter case, the problems of the defect structure of bulk crystals sapphire and the choice of a method for growing sapphire crystals of the highest structural quality are considered.     

Sapphire substrates with a regular surface relief

The lithography-free technique is proposed to obtain a regular relief in the form of a regular 2D system of 25-nm protrusions on a sapphire plate surface. The use of grid masks allows one to form a regular relief on the sapphire substrates of arbitrary area. The structure of crystal films formed by the sputtering of metal aluminum onto sapphire substrates with subsequent oxidation and annealing is thoroughly investigated and compared with the nanostructured (0001) sapphire wafer surface in the form of regular steps up to 5 nm in height with atomically smooth terraces.     

Epitaxy of CdTe on sapphire substrates with titanium buffer layers

The formation of a developed electrical relief on the sapphire substrate surface is investigated. A technique is proposed for introducing Ti⁴⁺ impurity atoms into the sapphire crystal lattice by depositing titanium layers with a thickness of about 5 nm and their annealing in air (oxidizing atmosphere) to a temperature of 1400°C. It is shown that this preliminary treatment of the sapphire substrate surface results in epitaxial growth of (111) СdTe films parallel to the sapphire (0001) plane at a temperature of 350°C.