共查询到19条相似文献,搜索用时 119 毫秒
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用于ICF实验的掺溴聚苯乙烯平面调制箔靶 总被引:1,自引:0,他引:1
以掺溴聚苯乙烯平面调制箔靶的制备为主,介绍通过激光干涉法结合图形转移工艺获得具有正弦起伏图形的掺溴聚苯乙烯平面调制箔靶的工艺.对表面调制起伏图形的精确转移进行研究,以SEM和台阶仪监控图形转移过程,控制耦合在调制图形上的表面粗糙度. 相似文献
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为了研究惯性约束聚变(ICF)实验用靶丸不同密度界面的流体力学不稳定性增长,设计并制备了聚苯乙烯(CH)/碳气凝胶(CRF),CRF/硅气凝胶(SiO2)和CH/Al三种双介质调制靶。采用溶胶-凝胶工艺制备了密度分别为250和800mg/cm3的CRF气凝胶薄片;采用激光微加工工艺分别在两种不同密度的CRF薄片和工业用纯Al箔上引入调制图形;采用旋涂工艺在Al箔和CRF薄片(250mg/cm3)的调制表面制备一层CH薄膜,得到CH/Al和CH/CRF双介质调制靶,采用溶胶-凝胶工艺在CRF薄片(800mg/cm3)表面制备一层低密度SiO2气凝胶,得到CRF/SiO2双介质调制靶。采用电子天平、扫描电子显微镜、工具显微镜和台阶仪对所制备的CH/CRF,CRF/SiO2和CH/Al三种双介质调制靶进行靶参数测量。结果表明:三种双介质调制靶层与层之间结合紧密,界面清晰,调制图形为正弦,靶参数测量准确。 相似文献
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在惯性约束聚变(ICF)实验中,点火靶丸表面(界面)的粗糙度和缺陷所产生的流体力学不稳定性是决定点火成功与否的关键因素之一,设计和研制流体力学不稳定性分解实验用靶是解决该问题的主要技术手段。结合国内外的研究现状和神光-Ⅱ激光装置的特点,设计并研制了一种新型柱状激波管。该靶型由三种介质组成,分别为调制聚苯乙烯(CH)圆片、柱状碳气凝胶(CRF)和CH微套管。调制CH圆片和柱状CRF通过微加工技术装配到CH微套管内,封装后形成柱状激波管。介绍了该靶型的设计原理和详细的制备工艺,并对相应的靶参数进行了测量。结果表明:柱状CRF气凝胶具有较好的成型性,长度、直径和密度分别为1000μm、730μm和250mg·cm-3;CH圆片的厚度和直径分别为15μm和730μm,表面调制图形的周期和峰谷差分别为100μm和4.3μm;实验得到的柱状激波管的轴向和径向最大装配误差分别为2μm和3μm。 相似文献
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针对神光Ⅱ第九路激光条件,利用1维JB程序和多台阶靶技术对冲击波在铝 金阻抗匹配靶中的传播稳定性进行了理论和实验研究,实验结果与理论结果基本吻合。结果表明,激光驱动冲击波在铝 金阻抗匹配靶中传播时,高阻抗待测材料金中的冲击波稳定传播最大距离急剧减小。因此,在进行铝-金阻抗匹配靶物理参数设计时,应保证高阻抗材料金台阶厚度满足冲击波传播稳定性,然后再按照阻抗匹配实验中两种材料的冲击波速度比来确定低阻抗标准材料铝的台阶厚度。根据神光Ⅱ第九路激光条件,铝-金阻抗匹配靶中铝基底厚度选取为30 μm左右较好,金台阶和铝台阶厚度应分别小于10 μm和17 μm。 相似文献
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建立起一套侧向阴影照相的光学系统,利用可见光作为探测光,在状态方程实验中对靶的飞行速度进行探测。在天光KrF准分子激光装置上进行激光打靶实验,激光波长为248.4 nm。在激光功率密度为8.3×1011 W/cm2的条件下,测得50 μm厚铝靶的飞行速度为3.28 km/s;在激光功率密度为4.7×101011 W/cm2的条件下,测得带100 μm厚烧蚀层的13 μm厚铝靶的飞行速度为2.52 km/s。最后进行了误差分析计算,实验中探测激光与靶表面偏离角度最大不会超过2.06°,偏离角对实验精度产生的影响可以被忽略。 相似文献
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采用非对称磁镜场电子回旋共振等离子体分别对沉积过程中掺氮和未掺氮的化学气相沉积金刚石膜进行了刻蚀研究, 结果表明: 掺氮制备的金刚石膜的刻蚀主要集中在晶棱处, 经过4h刻蚀后其表面粗糙度由刻蚀前的4.761 μm下降至3.701 μm, 刻蚀对金刚石膜的表面粗糙度的影响较小; 而未掺氮制备的金刚石膜的刻蚀表现为晶面的均匀刻蚀, 晶粒坍塌,刻蚀4h后其表面粗糙度由刻蚀前的3.061 μm下降至1.083 μm. 刻蚀导致表面粗糙度显著降低. 上述差别的主要原因在于金刚石膜沉积过程中掺氮导致氮缺陷在金刚石晶棱处富集, 晶棱处电子发射加强, 引导离子向晶棱运动并产生刻蚀, 从而加剧晶棱的刻蚀. 而未掺氮金刚石膜,其缺陷相对较少且分布较均匀 ,刻蚀时整体呈现为 (111) 晶面被均匀刻蚀继而晶粒坍塌的现象.
关键词:
掺氮
金刚石膜
刻蚀
非对称磁镜场 相似文献
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A model system consisting of a thin layer of vacuum-deposited metallic aluminium on a glass microscope slide was developed to demonstrate the effectiveness of cavitational activity (occurring within the cooling water supply of a dental ultrasonic descaler operating at 25 kHz) in the removal of particulate matter from solid surfaces. The pattern of particulate matter removal using this model system demonstrated both the mechanism of bubble activity and the erosive nature of microbubbles.Non-resonant bubbles were formed by surface wave activity and adhered to the surface of the slide. There was some removal of the aluminium metal at the periphery of the bubble (probably by a microstreaming mechanism) giving a ‘ghost’ outline. The majority of aluminium removal was caused by numerous microbubbles of non-resonant sizes (typically 1 to 2 μm diameter) formed by surface wave induced fragmentation of the parent bubble.The damaging and erosive effects of transient cavitational activity appear to be the result of sub-resonant sized microbubble formation from larger parent bubbles. 相似文献
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The formation of relief features in silicon by a one-step process that avoids resist patterning has been achieved by laser-projection-patterned etching in a chlorine atmosphere. Etching is performed with a pulsed KrF excimer laser (λ=248 nm, τ=15 ns) and deep UV projection optics having an optical resolution of 2 μm. Etching takes place in two steps. Between laser pulses, the silicon surface is covered with a monolayer of chemisorbed chlorine atoms (one Cl per Si). During the laser pulse, surface transient heating at temperatures in excess of 1250 K results in the desorption of the reaction products (mainly SiCl2). At laser energy densities that induce surface melting, this desorption results in a saturated etch. rate of 0.06 nm per pulse, corresponding to the removal of about 0.5 Si monolayer per pulse. At densities below the melting threshold, reduced thermal and possibly a small amount of photochemical etching result in lower etch rates. Projection of a resolution test photomask onto the silicon surface shows that the size of etched features differs from the size of the projected features and strongly depends on the laser energy density. As a result of the heat spread in silicon and of the highly nonlinear character of the etching reaction, etched features smaller than the irradiated area are obtained at all fluences in the range 350–700 mJ/cm2. Etched lines having a width down to about 1.3 μm were produced. Proximity effects due to heat spread were also evidenced for small projected features (<4 μm). The characteristics of the etched patterns are compared with those obtained for GaAs etching in chlorinated gases with the same experimental set-up. Significant differences in pattern resolution for Si and GaAs etching are observed. This variation in resolution is believed to result from the fact that Si has a greater thermal diffusivity than GaAs. 相似文献
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利用非对称磁镜场电子回旋共振等离子体产生的氧回旋离子束刻蚀了化学气相沉积金刚石膜,研究了工作气压和磁电加热电压对金刚石样品附近的离子温度和密度的影响,并分析了金刚石膜的刻蚀和机械抛光效果。结果表明:当工作气压为0.03 Pa,磁电加热电压为200 V时,离子温度和密度最大,分别为7.38 eV和 23.81010 cm-3 。在此优化条件下刻蚀金刚石膜4 h后,其表面粗糙度由刻蚀前的3.525 m降为2.512 m,机械抛光15 min后,表面粗糙度降低为0.517 m,即金刚石膜经离子束刻蚀后可显著提高机械抛光效率。 相似文献
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微透镜阵列反应离子束蚀刻传递研究 总被引:4,自引:0,他引:4
提出了一种微透镜阵列复制的新方法-反应离子束蚀刻法(RIBE)它在工作原理和参数控制等方面较传统的蚀刻方法有很大的先进性,能够实现蚀刻过程的精确控制,本文详细阐述了反应离子蚀刻过程中的蚀刻选择性的控制方法,通过对各种蚀刻参数的控制,最终实现了微透镜阵列在硅等红外材料上面形传递的深度蚀刻,口径φ100μm的F/2微透镜阵列在硅基底上的传递精度达1:1.03,无侧向钻蚀。 相似文献
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强激光辐照下纯铝的力学响应和层裂的实验测量与分析 总被引:3,自引:2,他引:1
采用速度干涉(VISAR)测试技术,对强激光辐照下纯铝的动态力学响应和层裂特性进行了实验测量和分析。样品厚度分别为200 μm 和485 μm,激光脉冲的半高宽约为10 ns,功率密度变化范围为1010~1011 W·cm-2。实测了样品自由面速度波形,反映了强激光加载作用下材料损伤演化过程以及损伤对材料动态响应的影响。计算得到了冲击波强度(2.0~13.4 GPa) 和不同拉伸应变率下铝的层裂强度(1.6~2.3 GPa)。在所采用的实验条件和1维近似下,激光辐照产生的冲击波强度与激光功率密度之间成线性关系。最后讨论了层裂强度与拉伸应变率之间的关系,显示层裂强度随着拉伸应变率的增加而增大。 相似文献
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D. V. Roshchupkin D. V. Irzhak S. L. Shabel’nikova A. A. Firsov 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2013,7(4):663-666
The X-ray optical properties of diffraction gratings fabricated on the basis of a Si(400) crystal with a period of D = 1 μm are studied by triple-crystal X-ray diffractometry. The diffraction gratings are manufactured both by silicon profiling during the process of plasma chemical etching and by forming a phase-shift grating on the surface of a Si crystal. The principal difference in the diffraction properties of these gratings is demonstrated. The presence of an Au phase-shift grating is shown to lead to the formation of a two-dimensional diffraction pattern, whereas Si profiling leads to the formation of only a one-dimensional diffraction pattern. 相似文献
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