Tuning of optical band gaps: syntheses, structures, magnetic properties, and optical properties of CsLnZnSe(3) (Ln = Sm, Tb, Dy, Ho, Er, Tm, Yb, and Y)

Eight new quaternary selenides CsSmZnSe(3), CsTbZnSe(3), CsDyZnSe(3), CsHoZnSe(3,) CsErZnSe(3), CsTmZnSe(3), CsYbZnSe(3), and CsYZnSe(3) have been synthesized with the use of high-temperature solid-state experimental methods. These compounds are isostructural with KZrCuS(3), crystallizing with four formula units in the orthorhombic space group Cmcm. The structure of these CsLnZnSe(3) compounds is composed of [LnZnSe(3)(-)] layers separated by Cs atoms. The Ln atom is octahedrally coordinated by six Se atoms, the Zn atom is tetrahedrally coordinated by four Se atoms, and the Cs atom is coordinated by a bicapped trigonal prism of eight Se atoms. Because there are no Se-Se bonds in the structure, the oxidation state of Cs is 1+, that of Ln is 3+, and that of Zn is 2+. CsYbZnSe(3) exhibits an antiferromagnetic transition at 11 K, whereas CsSmZnSe(3) does not follow a Curie-Weiss law. The remaining rare-earth compounds are paramagnetic, and the calculated effective magnetic moments of the rare-earth ions agree well with their theoretical values. Optical absorption data on face-indexed single crystals of CsSmZnSe(3), CsErZnSe(3), CsYbZnSe(3), and CsYZnSe(3) demonstrate that the optical band gap changes by more than 0.75 eV with the composition and by as much as 0.20 eV with the crystal orientation. The optical band gaps range from 2.63 eV (CsSmZnSe(3), CsErZnSe(3)) to 1.93 eV (CsYbZnSe(3)) for the (010) crystal face and 2.56 eV (CsErZnSe(3)) to 1.88 eV (CsYbZnSe(3)) for the (001) crystal face. The difference in the optical band gap of the (010) face vs the (001) face varies from +0.05 eV (CsYbZnSe(3)) to +0.20 eV (CsSmZnSe(3)).     

Synthesis and characterization of two quaternary thorium chalcophosphates: Cs4Th2P6S18 and Rb7Th2P6Se21

Two new thorium chalcophosphates have been synthesized by the reactive flux method and characterized by single-crystal X-ray diffraction, diffuse reflectance, and Raman spectroscopy: Cs4Th2P6S18 (I); Rb7Th2P6Se21 (II). Compound I crystallizes as colorless blocks in the triclinic space group P1 (No. 2) with a = 12.303(4) A, b = 12.471(4) A, c = 12.541(4) A, alpha = 114.607(8) degrees, beta = 102.547(6) degrees, gamma = 99.889(7) degrees, and Z = 2. The structure consists of (Th2P6S18)(4-) layers separated by layers of cesium cations and only contains the (P2S6)(4-) building block. Compound II crystallizes as red blocks in the triclinic space group P1 (No. 2) with a = 11.531(3) A, b = 12.359(4) A, c = 16.161(5) A, alpha = 87.289(6) degrees, beta = 75.903(6) degrees, gamma = 88.041(6) degrees, and Z = 2. The structure consists of linear chains of (Th2P6Se21)(7-) separated by rubidium cations. Compound II contains both the (PSe4)(3-) and (P2Se6)(4-) building blocks. Both structures may be derived from two known rare earth structures where a rare earth site is replaced by an alkali or actinide metal to form these novel structures. Optical band gap measurements show that compound I has a band gap of 2.8 eV and compound II has a band gap of 2.0 eV. Solid-state Raman spectroscopy of compound I shows the vibrations expected for the (P2S6)(4-) unit. Raman spectroscopy of compound II shows the vibrations expected for both (PSe4)(3-) and (P2Se6)(4-) units. Our work shows the remarkable diversity of the actinide chalcophosphate system and demonstrates the phase space is still ripe to discover new structures.     

Ba5Ga4Se10: a new selenidogallate containing the novel [Ga4Se10](10-) anionic cluster with Ga in a mixed-valence state

The new compound Ba(5)Ga(4)Se(10) has been synthesized for the first time. It crystallizes in the tetragonal space group I4/mcm with a = 8.752(2) ?, c = 13.971(9) ?, and Z = 2. The structure contains discrete [Ga(4)Se(10)](10-) anions and charge-compensating Ba(2+) cations. The novel highly anionic [Ga(4)Se(10)](10-) cluster is composed of two Ga(Se)(4) tetrahedra and two Ga(Ga)(Se)(3) tetrahedra with Ga in the 2+/3+ valence states. It also exhibits an unusually long Ga-Se distance of 2.705(2) ?, which has only been observed under high pressure conditions before. A band gap of 2.20(2) eV was deduced from the UV/vis diffuse reflectance spectrum.     

Rare-earth metal(III) oxide selenides M4O4Se[Se2] (M=La, Ce, Pr, Nd, Sm) with discrete diselenide units: crystal structures, magnetic frustration, and other properties

The rare-earth metal(III) oxide selenides of the formula La4O4Se[Se2], Ce4O4Se[Se2], Pr4O4Se[Se2], Nd4O4Se[Se2], and Sm4O4Se[Se2] were synthesized from a mixture of the elements with selenium dioxide as the oxygen source at 750 degrees C. Single crystal X-ray diffraction was used to determine their crystal structures. The isostructural compounds M4O4Se[Se2] (M=La, Ce, Pr, Nd, Sm) crystallize in the orthorhombic space group Amm2 with cell dimensions a=857.94(7), b=409.44(4), c=1316.49(8) pm for M=La; a=851.37(6), b=404.82(3), c=1296.83(9) pm for M=Ce; a=849.92(6), b=402.78(3), c=1292.57(9) pm for M=Pr; a=845.68(4), b=398.83(2), c=1282.45(7) pm for M=Nd; and a=840.08(5), b=394.04(3), c=1263.83(6) pm for M=Sm (Z=2). In their crystal structures, Se2- anions as well as [Se-Se]2- dumbbells interconnect {[M4O4]4+} infinity 2 layers. These layers are composed of three crystallographically different, distorted [OM4]10+ tetrahedra, which are linked via four common edges. The compounds exhibit strong Raman active modes at around 215 cm(-1), which can be assigned to the Se-Se stretching vibration. Optical band gaps for La4O4Se[Se2], Ce4O4Se[Se2], Pr4O4Se[Se2], Nd4O4Se[Se2], and Sm4O4Se[Se2] were derived from diffuse reflectance spectra. The energy values at which absorption takes place are typical for semiconducting materials. For the compounds M4O4Se[Se2] (M=La, Pr, Nd, Sm) the fundamental band gaps, caused by transitions from the valence band to the conduction band (VB-CB), lie around 1.9 eV, while for M=Ce an absorption edge occurs at around 1.7 eV, which can be assigned to f-d transitions of Ce3+. Magnetic susceptibility measurements of Ce4O4Se[Se2] and Nd4O4Se[Se2] show Curie-Weiss behavior above 150 K with derived experimental magnetic moments of 2.5 micro B/Ce and 3.7 micro B/Nd and Weiss constants of theta p=-64.9 K and theta p=-27.8 K for the cerium and neodymium compounds, respectively. Down to 1.8 K no long-range magnetic ordering could be detected. Thus, the large negative values for theta p indicate the presence of strong magnetic frustration within the compounds, which is due to the geometric arrangement of the magnetic sublattice in form of [OM4]10+ tetrahedra.     

Syntheses, structure, some band gaps, and electronic structures of CsLnZnTe3 (Ln=La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Y)

Eleven new quaternary rare-earth tellurides, CsLnZnTe3 (Ln=La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Y), were prepared from solid-state reactions at 1123 K. These isostructural materials crystallize in the layered KZrCuS3 structure type in the orthorhombic space group Cmcm. The structure is composed of LnTe6 octahedra and ZnTe4 tetrahedra that share edges to form [LnZnTe3] layers. These layers stack perpendicular to [010] and are separated by layers of face- and edge-sharing CsTe8 bicapped trigonal prisms. There are no Te-Te bonds in the structure of these CsLnZnTe3 compounds so the formal oxidation states of Cs/Ln/Zn/Te are 1+/3+/2+/2-. Optical band gaps of 2.13 eV for CsGdZnTe3 and 2.12 eV for CsTbZnTe3 were deduced from single-crystal optical absorption measurements. A first-principles calculation of the density of states and the frequency-dependent optical properties was performed on CsGdZnTe3. The calculated band gap of 2.1 eV is in good agreement with the experimental value. A quadratic fit for the lanthanide contraction of the Ln-Te distance is superior to a linear one if the closed-shell atom is included.     

A Mixed Metal Phosphate Containing Two Types of Phosphoric Anionic Groups: Cs_2Ga_4(P_2O_7)_2(P_4O_(13))

A new mixed metal phosphate of Cs2Ga4P8O(27), which also can be written as Cs2Ga4(P2O7)2(P4O(13)), was synthesized by high temperature solid state syntheses and structurally characterized by X-ray single-crystal diffraction for the first time. The title compound crystallizes in monoclinic system with space group P21/c(No.14), and features a 3D framework which can be considered as alternating layers of {Ga2(P4O(13))}n and {Ga2(P2O7)2}n^2n- parallel to the bc plane further connected by Ga-O-P linkages, where Cs^+ cations are located in the free space between two adjacent layers to charge the valence. The Ga³⁺ cations in the compound contain two kinds of coordination models(4 and 6). Furthermore, the title compound coexists of two phospho-ric anionic groups which are non-condensed horseshoe-shaped(P4O(13)) and two(P2O7) with different symmetries. The density functional theory calculations indicate that Cs2Ga4P8O(27) is a direct band gap insulator with flat valence and dispersive conduction bands and a band gap of 4.13 eV.     

Impressive structural diversity and polymorphism in the modular compounds ABi3Q5 (A = Rb, Cs; Q = S, Se, Te)

An outstanding example of structural diversity and complexity is found in the compounds with the general formula ABi(3)Q(5) (A = alkali metal; Q = chalcogen). gamma-RbBi(3)S(5) (I), alpha-RbBi(3)Se(5) (II), beta-RbBi(3)Se(5) (III), gamma-RbBi(3)Se(5) (IV), CsBi(3)Se(5) (V), RbBi(3)Se(4)Te (VI), and RbBi(3)Se(3)Te(2) (VII) were synthesized from A(2)Q (A = Rb, Cs; Q = S, Se) and Bi(2)Q(3) (Q = S, Se or Te) at temperatures above 650 degrees C using appropriate reaction protocols. gamma-RbBi(3)S(5) and alpha-RbBi(3)Se(5) have three-dimensional tunnel structures while the rest of the compounds have lamellar structures. gamma-RbBi(3)S(5), gamma-RbBi(3)Se(5), and its isostructural analogues RbBi(3)Se(4)Te and RbBi(3)Se(3)Te(2) crystallize in the orthorhombic space group Pnma with a = 11.744(2) A, b = 4.0519(5) A, c = 21.081(3) A, R1 = 2.9%, wR2 = 6.3% for (I), a = 21.956(7) A, b = 4.136(2) A, c = 12.357(4) A, R1 = 6.2%, wR2 = 13.5% for (IV), and a = 22.018(3) A, b = 4.2217(6) A, c = 12.614(2) A, R1 = 6.2%, wR2 = 10.3% for (VI). gamma-RbBi(3)S(5) has a three-dimensional tunnel structure that differs from the Se analogues. alpha-RbBi(3)Se(5) crystallizes in the monoclinic space group C2/m with a = 36.779(4) A, b = 4.1480(5) A, c = 25.363(3) A, beta = 120.403(2) degrees, R1 = 4.9%, wR2 = 9.9%. beta-RbBi(3)Se(5) and isostructural CsBi(3)Se(5) adopt the space group P2(1)/m with a = 13.537(2) A, b = 4.1431(6) A, c = 21.545(3) A, beta = 91.297(3) degrees, R1 = 4.9%, wR2 = 11.0% for (III) and a = 13.603(3) A, b = 4.1502(8) A, c = 21.639(4) A, beta = 91.435(3) degrees, R1 = 6.1%, wR2 = 13.4% for (V). alpha-RbBi(3)Se(5) is also three-dimensional, whereas beta-RbBi(3)Se(5) and CsBi(3)Se(5) have stepped layers with alkali metal ions found disordered in several trigonal prismatic sites between the layers. In gamma-RbBi(3)Se(5) and RbBi(3)Se(4)Te, the layers consist of Bi(2)Te(3)-type fragments, which are connected in a stepwise manner. In the mixed Se/Te analogue, the Te occupies the chalcogen sites that are on the "surface" of the layers. All compounds are narrow band-gap semiconductors with optical band gaps ranging 0.4-1.0 eV. The thermal stability of all phases was studied, and it was determined that gamma-RbBi(3)Se(5) is more stable than the and alpha- and beta-forms. Electronic band calculations at the density functional theory (DFT) level performed on alpha-, beta-, and gamma-RbBi(3)Se(5) support the presence of indirect band gaps and were used to assess their relative thermodynamic stability.     

BaGa2MQ6 (M = Si, Ge; Q = S, Se): a new series of promising IR nonlinear optical materials

The four compounds BaGa(2)MQ(6) (M = Si, Ge; Q = S, Se) have been identified as a new series of IR nonlinear optical (NLO) materials and are promising for practical applications. They are isostructural and crystallize in the noncentrosymmetric polar space group R3 of the trigonal system. Their three-dimensional framework is composed of corner-sharing (Ga/M)Q(4) (M = Si, Ge; Q = S, Se) tetrahedra with Ba(2+) cations in the cavities. The polar alignment of one (Ga/M)-Q2 bond for each (Ga/M)Q(4) tetrahedra along the c direction is conducive to generating a large NLO response, which was confirmed by powder second-harmonic generation (SHG) using a 2090 nm laser as fundamental wavelength. The SHG signal intensities of the two sulfides were close to that of AgGaS(2) and those for the two selenides were similar as that of AgGaSe(2). The large band gaps of 3.75(2) eV, 3.23(2) eV, 2.88(2) eV, and 2.22 (2) eV for BaGa(2)SiS(6), BaGa(2)GeS(6), BaGa(2)SiSe(6), and BaGa(2)GeSe(6), respectively, will be very helpful to increase the laser damage threshold. Moreover, all the four BaGa(2)MQ(6) (M = Si, Ge; Q = S, Se) compounds exhibit congruent-melting behavior, which indicates that bulk crystals needed for practical applications can be obtained by the Bridgman-Stockbarger method. The calculated birefringence indicates that these materials may be phase-matchable in the IR region and the calculated SHG coefficients agree with the experimental observations. According to our preliminary study, the BaGa(2)MQ(6) compounds represent a new series of promising IR nonlinear optical (NLO) materials which do not belong to the traditional chalcopyrite-type materials such as AgGaQ2 (Q = S, Se) and ZnGeP(2).     

Synthesis of a family of solids through the building-block approach: a case study with Ag(+) substitution in the ternary Na-Ge-Se system

A new family of Ag-substituted pseudoquaternary alkali-seleno-germanates has been synthesized by two solid-state routes: the conventional flux method and metathesis. This family includes a series of semiconductors with varying amounts of Ag+ substituted for Na+ in Na8Ge4Se10 to form AgxNa(8-x)Ge4Se10, [x = 0.31 (I), 0.67 (II), 0.77 (III), 0.87 (IV), 1.05 (V), 1.09 (VI)] and another phase with a different composition AgxNa(6-x)Ge2Se7 (x = 1.76), VII, related to Na6Ge2Se7. In I-VI, Ge4Se10(8-) constitutes a 6-membered chairlike unit with a Ge-Ge bond, while in VII, a corner-shared dimer of GeSe4 tetrahedra (Ge2Se76-) acts as the building unit. The single-crystal structure analysis indicates that there is a phase transition from P to C2/c, in changing from pure Na8Ge4Se10 to AgxNa(8-x)Ge4 Se10 (I-VI), while there is no phase transition between pure Na6Ge2Se7 and AgxNa(6-x)Ge2Se7 (x = 1.76). The structures of I-VI may be described in terms of layers of cubic close-packed Se2- anions. In between the Se layers, octahedral holes fully occupied by Na+ and mixed Ag+/Na+ cations alternate with layers formed of octahedral holes fully occupied by Na+ and Ge26+ cations. Two adjacent Ge26+ cations form a chairlike Ge4Se10(8-) anion in which Ge-Ge bonds are oriented almost parallel to the Se layers. In contrast, VII does not have close-packed anions. Corner-shared GeSe4 tetrahedra (Ge2Se7(6-) dimer) and AgSe4 tetrahedra form layers that are cross-linked by Na/AgSe4 tetrahedra to form a 3-dimensional (3-D) structure. An optical property investigation indicates a red shift in the band gap of AgxNa(8-x)Ge4Se10 (x = 0.67)(II) as compared to that of pure Na8Ge4Se10. Raman data also indicate a red shift of the Ge-Se stretching mode in the Ag+-substituted phase II (x = 0.67) compared to that of Na8Ge4Se10.     

A Comparative Study of Two New Structure Types. Synthesis and Structural and Electronic Characterization of K(RE)P(2)Se(6) (RE = Y, La, Ce, Pr, Gd)

Two polytypes of potassium rare-earth-metal hexaselenodiphosphates(IV), K(RE)P(2)Se(6) (RE = Y, La, Ce, Pr, Gd), have been synthesized from the stoichiometric reaction of RE, P, Se, and K(2)Se(4) at 750 degrees C. Both single-crystal and powder X-ray diffraction analyses showed that the structures of these polytypes vary with the size of the rare earth metals. For the smaller rare-earth metals, Y and Gd, K(RE)P(2)Se(6) crystallized in the orthorhombic space group P2(1)2(1)2(1). The yttrium compound was studied by single-crystal X-ray diffraction with the cell parameters a = 6.7366(5) ?, b = 7.4286(6) ?, c = 21.603(2) ?, and Z = 4. This structure type comprises a layered, square network of yttrium atoms that are bound to four distinct [P(2)Se(6)](4)(-) units through selenium bonding. Each [P(2)Se(6)](4)(-) unit possesses a Se atom that is not bound to any Y atom but is pointing out into the interlayer spacing, into an environment of potassium cations. For larger rare-earth metals, La, Ce, and Pr, K(RE)P(2)Se(6) crystallized in a second, monoclinic polytype, the structure of which has been published. Both of these two different polytypes can be related to each other and several other isoelectronic chalcophosphate structures based on a Parthé valence electron concentration analysis. These structures include Ag(4)P(2)S(6), K(2)FeP(2)S(6), and the hexagonal M(II)PS(3) structure types. The magnetic susceptibilities of the title compounds have been studied, and the behavior can been explained based on a simple set of unpaired f-electrons. The diffuse reflectance spectroscopy also showed that these yellow plates are moderately wide band gap ( approximately 2.75 eV) semiconductors.     

Structures and physical properties of new semiconducting polyselenides Ba2CudeltaAg4-deltaSe5 with unprecedented linear Se(3)4- units

The title compounds were prepared from the elements in evacuated silica tubes at 650 degrees C, followed by slow cooling. Ba2Ag4Se5 forms a new structure type, space group C2/m, with a=16.189(2) A, b=4.5528(6) A, c=9.2500(1) A, beta=124.572(3) degrees, and V=561.4(1) A3 (Z=2). A maximum of 44% of the Ag atoms may be replaced with Cu atoms without changing the structure type. The crystal structure is composed of Ag4Se(5)4- layers, interconnected via the Ba2+ cations. The Ag atoms show irregular [3+1] coordination by the Se atoms, and the Ba atoms are located in capped square antiprisms formed by Se atoms. Most intriguing is the unprecedented occurrence of linear Se(3)4- units. According to the formulation (Ba2+)2(Ag+)4Se(3)4-(Se2-)2, this selenide is electron-precise with eight positive charges equalizing the eight negative charges. Electronic structure calculations indicated the presence of a band gap, as was experimentally confirmed: the electrical conductivity measurement revealed a gap of 0.6 eV for Ba2CuAg3Se5.     

Syntheses, structures, physical properties, and theoretical studies of CeMxOS (M = Cu, Ag; x approximately 0.8) and CeAgOS

Black single crystals of the two nonstoichiometric cerium coinage-metal oxysulfide compounds CeCu(x)OS and CeAg(x)OS (x approximately 0.8) have been prepared by the reactions of Ce2S3 and CuO or Ag2O at 1223 or 1173 K, respectively. A black powder sample of CeAgOS has been prepared by the stoichiometric reaction of Ce2S3, CeO2, Ag2S, and Ag at 1073 K. These isostructural materials crystallize in the ZrSiCuAs structure type with two formula units in the tetragonal space group P4/nmm. Refined crystal structure results and chemical analyses provide evidence that the previously known anomalously small unit-cell volume of LnCuOS for Ln = Ce (Ln = rare-earth metal) is the result of Cu vacancies and the concomitant presence of both Ce3+ and Ce4+. Both CeCu(0.8)OS and CeAgOS are paramagnetic with mu(eff) values of 2.13(6) and 2.10(1) mu(B), respectively. CeCu(0.8)OS is a p-type semiconductor with a thermal activation energy Ea = 0.22 eV, sigma(electrical) = 9.8(1) 10(-3) S/cm at 298 K, and an optical band gap Eg < 0.73 eV. CeAgOS has conductivity sigma(conductivity) = 0.16(4) S/cm and an optical band gap Eg = 0.71 eV at 298 K. Theoretical calculations with an on-site Coulomb repulsion parameter indicate that the Ce 4f states are fully spin-polarized and are not localized in CeCuOS, CeCu(0.75)OS, or CeAgOS. Calculated band gaps for CeCu(0.75)OS and CeAgOS are 0.6 and 0.8 eV, respectively.     

APdCu(Se2)(Se3) (A = K and Rb): new quaternary copper palladium polyselenides with unusual metal-selenium coordination

Two novel metal polyselenides, KPdCu(Se(2))(Se(3)) (I) and RbPdCu(Se(2))(Se(3)) (II), have been synthesized from solvothermal reactions in superheated ethylenediamine at 160 degrees C. The isostructural compounds crystallize in the monoclinic space group P2(1)/m, Z = 2, with a = 6.145(1) A, b = 7.268(1) A, c = 8.865(2) A, beta = 102.41(3) degrees for I, and a = 6.253(1) A, b = 7.267(1) A, c = 8.993(2) A, beta = 102.28(3) degrees for II. Their crystal structures are two-dimensional networks with [PdCu(Se(2))(Se(3))](-) anionic layers built from one-dimensional [Pd(Se(2))(Se(3))](2)(-) "chains" that are "stitched" together by tetrahedrally coordinated Cu atoms. The DSC data show that I and II are stable up to 400 degrees C and decompose at ca. 436 and 424 degrees C, respectively. Both compounds are narrow band-gap semiconductors with estimated band gaps of about 0.7 eV (I) and 0.8 eV (II), respectively. They are the first structurally characterized quaternary copper palladium polychalcogenides with a (Se(2))(2)(-) and a (Se(3))(2)(-) fragment, both exhibiting interesting and unusual metal-selenium coordination.     

The CsLnMSe3 semiconductors (Ln = rare-earth element,Y; M = Zn,Cd, Hg)

CsLnCdSe(3) (Ln = Ce, Pr, Sm, Gd, Tb, Dy, Y) and CsLnHgSe(3) (Ln = La, Ce, Pr, Nd, Sm, Gd, Y) have been synthesized at 1123 K. These isostructural materials crystallize in the layered KZrCuS(3) structure type in the orthorhombic space group Cmcm and are group X extensions of the previously characterized Zn compounds. The structure is composed of two-dimensional [LnMSe(3)] layers that stack perpendicular to [010] and are separated by layers of face- and edge-sharing CsSe(8) bicapped trigonal prisms. Because there are no Se-Se bonds in the structure of CsLnMSe(3) (M = Zn, Cd, Hg), the formal oxidation states of Cs/Ln/M/Se are 1+/3+/2+/2-. CsSmHgSe(3) does not adhere to the Curie-Weiss law, whereas CsCeHgSe(3) and CsGdHgSe(3) are Curie-Weiss paramagnets with micro (eff) values of 2.77 and 7.90 micro (B), corresponding well with the theoretical values of 2.54 and 7.94 micro (B) for Ce(3+) and Gd(3+), respectively. Single-crystal optical absorption measurements were performed with polarized light perpendicular to the (010) and (001) crystal faces of these materials. The band gaps of the (010) crystal faces range from 1.94 eV (CsCeHgSe(3)) to 2.58 eV (CsYCdSe(3)) whereas those of the (001) crystal faces span the range 2.37 eV (CsSmHgSe(3)) to 2.54 eV (CsYCdSe(3) and CsYHgSe(3)). The largest band gap variation between crystal faces is 0.06 eV for CsYCdSe(3). Theoretical calculations for CsYMSe(3) indicate that these materials are direct band gap semiconductors whose colors and optical band gaps are dependent upon the orbitals of Y, M, and Se.     

碱金属硒化物MHgSbSe~3(M=K,Rb, Cs)的晶体结构及其半导体性 质的研究

用有机溶剂热生长技术(SolvothermalTechnique)制备碱金属硒化物MHgSbSe~3(M=K,Rb,Cs),用单晶X射线衍射技术对其进行晶体结构分析,热分析结果表明,在常温(<200℃)下均为稳定的化合物。光学性质测试表明它们是半导体材料,KHgSbSe~3,RbHgSbSe~3,CsHgSbSe~3的禁带宽度依次为1.85eV,1.75eV,1.65eV。     

Cs3AgAs4Se8 and CsAgAs2Se4: selenoarsenates with infinite 1 infinity[AsSe2]- chains in different Ag+ coordination environments

Two quaternary silver selenoarsenates Cs3AgAs4Se8 (I) and CsAgAs2Se4 (II) have been discovered by methanothermal reaction of Li3AsSe3 with AgBF4 in the presence of the respective alkali metal sources Cs2CO3 and CsCl. Orange crystals of Cs3AgAs4Se8 (I) were formed after reaction at 120 degrees C for 72 h, whereas red CsAgAs2Se4 (II) was obtained under slightly different conditions at 140 degrees C for 70 h. Both compounds possess novel two-dimensional (2D) polyanions consisting of infinite 1 infinity[AsSe2]- chains that are interconnected by Ag+ ions in different coordination patterns. In I, a double layer of 1 infinity[AsSe2]- chains is bridged by distorted trigonal planar coordinated Ag+ atoms to form a 2 infinity[AgAs4Se8]3- layer with a thickness of about 11.3 A. The nonbonding Ag...Ag distances are about 4.220 A, and large cavities within the layers accommodate for three of the four crystallographic Cs+ cations. The double amount of Ag+ atoms per AsSe2 chain unit in II leads to simple layers 2 infinity[AgAs2Se4]- [=[Ag2As4Se8]2-] in which the Ag+ atoms are arranged in rows between the 1 infinity[AsSe2]- chains, with alternating Ag...Ag distances of 3.053(3) and 3.488(3) A. Hereby the 1 infinity[AsSe2]- polyanions show a disorder within the central (-As-Seb)- chain (b = bridging), while the positions of the terminal Se atoms (Set) remain unaffected. The thermal, optical, and spectroscopic properties of the compounds are reported. Both I and II melt with decomposition and are wide band gap semiconductors with values of 2.07 and 1.79 eV, respectively. Raman spectroscopic data show typical band patterns expected for infinite [AsSe2]- chains. Crystal Data: Cs3AgAs4Se8 (I), monoclinic, C2/c, a = 25.212(2) A, b = 8.0748(7) A, c = 22.803(2) A, beta = 116.272(2) degrees, Z = 8; CsAgAs2Se4 (II), monoclinic, P2(1)/n, a = 10.9211(1) A, b = 6.5188(2) A, c = 13.7553(3) A, beta = 108.956(1) degrees, Z = 4.     

Ba2AgInS4 and Ba4MGa5Se12 (M = Ag, Li): syntheses, structures, and optical properties

The first two members in alkaline-earth/group XI/group XIII/chalcogen system, namely Ba(2)AgInS(4) and Ba(4)AgGa(5)Se(12), were synthesized along with a Li analogue Ba(4)LiGa(5)Se(12). Ba(2)AgInS(4) crystallizes in space group P2(1)/c. It contains [AgInS(4)](4-) layers built from AgS(3) triangles and InS(4) tetrahedra with Ba(2+) cations inserted between the layers. Ba(4)AgGa(5)Se(12) and Ba(4)LiGa(5)Se(12) adopt two closely-related structure types in space group P4[combining macron]2(1)c with structural difference originating from the different positions of Ag and Li in them. The three-dimensional framework in Ba(4)AgGa(5)Se(12) is composed of GaSe(4) tetrahedra with the Ba and Ag atoms occupying the large and small channels respectively, whereas that in Ba(4)LiGa(5)Se(12) is built from LiSe(4) and GaSe(4) tetrahedra with channels to accommodate the Ba atoms. As deduced from the diffuse reflectance spectra measurement, the optical band gaps were 2.32 (2) eV, 2.52 (2) eV, and 2.65 (2) eV for Ba(2)AgInS(4), Ba(4)AgGa(5)Se(12), and Ba(4)LiGa(5)Se(12), respectively.     

Design of energy band alignment at the Zn(1-x)Mg(x)O/Cu(In,Ga)Se2 interface for Cd-free Cu(In,Ga)Se2 solar cells

The electronic band structure at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface was investigated for its potential application in Cd-free Cu(In,Ga)Se(2) thin film solar cells. Zn(1-x)Mg(x)O thin films with various Mg contents were grown by atomic layer deposition on Cu(In(0.7)Ga(0.3))Se(2) absorbers, which were deposited by the co-evaporation of Cu, In, Ga, and Se elemental sources. The electron emissions from the valence band and core levels were measured by a depth profile technique using X-ray and ultraviolet photoelectron spectroscopy. The valence band maximum positions are around 3.17 eV for both Zn(0.9)Mg(0.1)O and Zn(0.8)Mg(0.2)O films, while the valence band maximum value for CIGS is 0.48 eV. As a result, the valence band offset value between the bulk Zn(1-x)Mg(x)O (x = 0.1 and x = 0.2) region and the bulk CIGS region was 2.69 eV. The valence band offset value at the Zn(1-x)Mg(x)O/CIGS interface was found to be 2.55 eV after considering a small band bending in the interface region. The bandgap energy of Zn(1-x)Mg(x)O films increased from 3.25 to 3.76 eV as the Mg content increased from 0% to 25%. The combination of the valence band offset values and the bandgap energy of Zn(1-x)Mg(x)O films results in the flat (0 eV) and cliff (-0.23 eV) conduction band alignments at the Zn(0.8)Mg(0.2)O/Cu(In(0.7)Ga(0.3))Se(2) and Zn(0.9)Mg(0.1)O/Cu(In(0.7)Ga(0.3))Se(2) interfaces, respectively. The experimental results suggest that the bandgap energy of Zn(1-x)Mg(x)O films is the main factor that determines the conduction band offset at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface. Based on these results, we conclude that a Zn(1-x)Mg(x)O film with a relatively high bandgap energy is necessary to create a suitable conduction band offset at the Zn(1-x)Mg(x)O/CIGS interface to obtain a robust heterojunction. Also, ALD Zn(1-x)Mg(x)O films can be considered as a promising alternative buffer material to replace the toxic CdS for environmental safety.     

Synthesis of new visible light active photocatalysts of Ba(In(1/3)Pb(1/3)M'(1/3))O3 (M' = Nb, Ta): a band gap engineering strategy based on electronegativity of a metal component

We have synthesized new, efficient, visible light active photocatalysts through the incorporation of highly electronegative non-transition metal Pb or Sn ions into the perovskite lattice of Ba(In(1/3)Pb(1/3)M'(1/3))O3 (M = Sn, Pb; M' = Nb, Ta). X-ray diffraction, X-ray absorption spectroscopic, and energy dispersive spectroscopic microprobe analyses reveal that tetravalent Pb or Sn ions exist in the B-site of the perovskite lattice, along with In and Nb/Ta ions. According to diffuse UV-vis spectroscopic analysis, the Pb-containing quaternary metal oxides Ba(In(1/3)Pb(1/3)M'(1/3))O3 possess a much narrower band gap (E(g) approximately 1.48-1.50 eV) when compared to the ternary oxides Ba(In(1/2)M'(1/2))O3 (E(g) approximately 2.97-3.30 eV) and the Sn-containing Ba(In(1/3)Sn(1/3)M'(1/3))O3 derivatives (E(g) approximately 2.85-3.00 eV). Such a variation of band gap energy upon the substitution is attributable to the broadening of the conduction band caused by the dissimilar electronegativities of the B-site cations. In contrast to the ternary or the Sn-substituted quaternary compounds showing photocatalytic activity under UV-vis irradiation, the Ba(In(1/3)Pb(1/3)M'(1/3))O3 compounds induce an efficient photodegradation of 4-chlorophenol under visible light irradiation (lambda > 420 nm). The present results highlight that the substitution of electronegative non-transition metal cations can provide a very powerful way of developing efficient visible light harvesting photocatalysts through tuning of the band structure of a semiconductive metal oxide.     

Chemical Reactivity and Band‐Gap Opening of Graphene Doped with Gallium,Germanium, Arsenic,and Selenium Atoms

Herein, the effects of substitutional doping of graphene with Ga, Ge, As, and Se are shown. Ge exhibits the lowest formation energy, whereas Ga has the largest one. Ga‐ and As‐doped graphene display a reactivity that is larger than that corresponding to a double vacancy. They can decompose H₂ and O₂ easily. Variation of the type and concentration of dopant makes the adjustment of the interlayer interaction possible. In general, doping of monolayer graphene opens a band gap. At some concentrations, Ga doping induces a half metallic behavior. As is the element that offers the widest range of gap tuning. Heyd–Scuseria–Ernzerhof calculations indicate that it can be varied from 1.3 to 0.3 eV. For bilayer graphene, the doped sheet induces charge redistribution in the perfect underneath sheet, which opens a gap in the range of 0.05–0.4 eV. This value is useful for developing graphene‐based electronics, as the carrier mobility of the undoped sheet is not expected to alter.