Thermally stimulated depolarization measurements on NaF:02-, NaCI:S2-.and KC1:S2-

In NaCl:S^2-, KC1:S² and NaF:0^2-(i) optical absorption and emission spectra and (ii) electric conductivity measurements show that after suitable heat treatment the bivalent anion impurities are paired with anion vacancies. Conventional dielectric absorption measurements and sensitive measurements of thermally stimulated depolarizing (t. s. d.) currents (ionic thermocurrent) have failed to detect the presence of bivalent anion-anion vacancy dipoles in these crystals. We suggest that derealization or sharing of the electron of the bivalent impurity ion, possibly with the vacancy, considerably reduces the dipole moment.     

测定半导体扩散层表面浓度、p-n结深度及扩散系数的霍耳效应法

本文叙述测定半导体扩散层表面浓度、P-n结深度及扩散系数的霍耳效应法。导出了求算半导体扩散层表面浓度、P-n结深度及扩散系数的一组积分公式。对砷由气相扩散入锗这一情况进行了详细研究:对上述公式进行数值积分并给出一系列图线,利用这些图线从实验值求得表面浓度等上述参数。实验表明:此法所测得的结深度和表面浓度分别与光干涉法直接测得的结深度和平均电导法测得的表面浓度,在误差范围内很好符合;而且此法所测得的扩散系数与B?senberg用电容法测得的也极为接近。扩散系数与温度的关系为D=2.3exp(-2.36/(kT)),当N₀=10¹⁴厘米^-3;D=1.7exp(-2.36/(kT)),当N₀=10¹⁶厘米^-3。     

标注立方、六方、四方及正交晶系粉末法X射线图谱指数的直线图解法

本文提出一个新的图解法,用它可以标注立方、六方、四方及正交晶系粉末法X射线图谱上衍射线条的指数。这种直线图解法的特点是:(1)作图简单;(2)立方、六方、四方及正交晶系合用同一直线图;(3)由直线图可分别求出晶格常数a,b,c的数值;(4)在使用上不受反射级数“n”的限制。     

Rotation-vibration spectrum of HT: Line position measurements of the 1-0, 4-0, and 5-0 bands

Optoacoustic techniques have been used to determine the line positions of the 1-0 fundamental and 4-0 and 5-0 overtones of the HT (¹H³H) molecule with an accuracy of better than 0.01 cm⁻¹. Comparison with line positions predicted from ab initio calculations that include adiabatic, relativistic, radiative, and nonadiabatic corrections shows disagreement outside of the experimental uncertainties.