Evolution from Diffuse Ferroelectric to Relaxor Ferroelectric in Pb1-xBax（Fe1/2Nb1/2）O3 Solid Solutions

Dielectric and ferroelectric characteristics for Pb1-xBax（Fe1/2Nh/2）O3 （x = 0,0.05,0.1,0.15, and 0.2） ceramics are determined together with their structures. X-ray diffraction （XRD） analysis confirms the solid solutions with the cubic structure. The dielectric nature changes from diffuse ferroelectric to relaxor ferroelectric with increasing x, while the phase transition temperature Tc （or Tm） decreases monotonously. The diffuse ferroelectric phase transition is observed in the solid solutions with 0≤x ≤0.05. For Pbl-xBax（Fe1/2Nb1/2）O3 with 0.1≤ x≤0.2, relaxor ferroelectric behavior is determined, and the Vogel-Fulcher equation is used to describe the relaxor behavior. The 1/ε versus T plots reveal the diffusion dielectric characteristics in both diffuse and relaxor ferroelectrics.     

Relaxor Behaviour and Ferroelectric Properties of （Li0.12Na0.88） （Nb0.9-xWa0.10Sbx）O3 Lead-Free Ceramics

New lead-free ceramics （Lio.12Na0.88） （Nbo.9-x Ta0.10 Sbx） 03 （0.01 × 0.06） are synthesized by solid-state reaction method. The dielectric, piezoelectric and ferroelectric properties of the ceramics are studied. The dielectric constant dependence with temperature and frequency of the ceramic specimen with x = 0.04 shows typical characteristics of relaxor ferroelectrics, and the Vogel-Fulcher relationship is fulfilled. The dielectric behaviour and its relation to the phase transition phenomena are discussed. The polarization hysteresis loops at room temperature are also measured.     

Tunable strain effect on the charge/orbital ordering state in electron-doped La0.9Hf0.1MnO3 films

The impact of the lattice strain on the charge/orbital ordering state was studied by using a heterostructure composed with electron-doped La 0.9 Hf 0.1 MnO 3(LHMO) and ferro-and piezoelectric 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3.The ferroelectric poling induces a significant reduction in the biaxial tensile strain in the LHMO film,leading to a decrease in the film resistance over the whole temperature range and an increase in the insulator to metal transition temperature T IM.The resistance of LHMO film exhibits different responses to the external electric fields and lattice deformation,which is attributed to the coactions of converse piezoelectric effect and ferroelectric polarity effect.The modification of charge/orbital ordering phase by the electric fields and ferroelectric polarization suggests that the unstable states in the manganites are sensitive to strain effects.     

Raman and X-Ray Investigation of Pyrope Garnet （Mg0.76Fe0.14Ca0.10）3Al2Si3O12 under High Pressure

The compressional behavlour of natural pyrope garnet is investigated by using angle-dlspersive synchrotron radiation x-ray diffraction and Raman spectroscopy in a diamond anvil cell at room temperature. The pressureinduced phase transition does not occur under given pressure. The equation of state of pyrope garnet is determined under pressure up to 25.3 GPa. The bulk modulus KTO is 199 GPa, with its first pressure derivative K′TO fixed to 4. The Raman spectra of pyrope garnet are studied. A new Raman peak nearly at 743 cm^-1 is observed in a bending vibration of the SiO4 tetrahedra frequency range at pressure of about 28 GPa. We suggest that the new Raman peak results from the lattice distortion of the SiO4 tetrahedra. All the Raman frequencies continuously increase with the increasing pressure. The average pressure derivative of the high frequency modes （650-1000 cm^-1） is larger than that of the low frequency （smaller than 650 cm^-1）. Based on these data, the mode Grǖneisen parameters for pyrope are obtained.     

Ferroelectric Transition and Curie-Weiss Behavior in Some Filled Tungsten Bronze Ceramics

Ferroelectric transitions in filled tungsten bronze ceramics Sr4R2Ti4Nb6O30, Sr5RTi3NbT030 （R=La, Nb, Sm ＆ Eu） and Ba4Nd2Ti4Nb6030 are investigated with differential scanning calorimetry （DSC） and the Curie- Weiss law fitting to the dielectric constant. The magnitude of the Curie Weiss constant C - 105 suggests displacement-type ferroelectric transition in the present compounds. The large AT difference between dielectric maximum temperature Tm and Curie-Weiss temperature To） values indicate the difficult formation of ferroeleetric domains or polar nanoregions in the present compounds and also the characteristics of the first order ferroelectric transition. Three categories are suggested for the ferroelectric transition in the above tungsten bronzes. The ferroelectric transition exhibits large thermal hysteresis. According to the DSC results, gradual recovery of the endothermic peak occurs after aging at temperature below the Curie point, indicating the gradual stability of the ferroelectric phase after cooling from the high-temperature para-electric phase. The relationship between the Curie- Weiss law fitting parameters and the nature of the ferroelectric transition is modified for the filled tungsten bronzes.     

Pyroelectricity and Spontaneous Polarization in [111] Oriented 0.955 Pb（Zn1/3Nb2/3）O3-0.045PbTiO3 Single Crystals

We report that the measurements of the pyroelectric current of the pre-poled [111]-oriented 0.955 Pb（Zn1/3Nb2/3） O3-0.045 PbTiO3 （PZN-4.5%PT） single crystals can shed some light on the phase transition and spontaneous polarization characters of this material in a similar way to measures of remanent polarization and dielectric properties. The pyroelectric current is measured and the corresponding spontaneous polarization is calculated as a function of temperature with various poling fields added during cooling the sample from 200℃ to room temperature. Critical electric field of 0.061 k V/cm is found to be essential to induce the intermediate ferroelectric orthorhombic phase between the ferroelectric rhombohedral and tetragonal phases. Below the critical field, the polarization increases almost linearly with the increase of poling field. At the critical field, the polarization at 30OC increases abruptly from 14μC/cm^2 for a poling field of O.06kV/cm to 29.5μC/cm^2 for a poling field of 0.061 kV/cm, and afterwards, increases slowly and saturates to 31 μC/cm^2 for poling fields beyond 0.55 kV/cm.     

The magnetoelectric properties of A- or B-site-doped PbVO3 films： A first-principles study

We employ first-principles calculations to study the magnetic and ferroelectric properties of PbVO3 with A （XA = Ca, Sr, Bi, Ba, and La） or B （XB = Ti, Cr, Mn, Fe, Co, Ni, and Cu） site dopants, with the aim of ascertaining a large ferroelectric polarization and a long magnetic order, or even a macro fen＇i/ferromagnetism, which is critical to their potential applications in magnetoelectronic devices. It is found that PbTXAVsO24 （XA =Ca, Sr, and Ba,） are inclined to maintain the spin glass and large ferroelectric polarization. The degenerated G- and C-antiferromagnetic （AFM） couplings in the ideal PbVO3 are broken up, accompanied by the loss of ferroelectric properties, when La or Bi is doped at the A site. In contrast, the above-mentioned 3d transition elements doped at the B site of PbVO3 could induce remnant magnetic moments and preserve the large ferroelectric polarization, except for Ni and Cu. The Fe or Cr at the B site clearly remove the degenerated G- and C-AFM coupling, but the nonmagnetic Ti cannot do so. For the Mn, Co, Ni, or Cu doped at the B sites, even the two-dimensional AFM ordering in PbVO3 is destabilized. The various doping effects are further discussed with inner strain and charge transfer.     

Properties of Co-Doped 0.92（Na0.5Bi0.5） TiO3-0.08BaTiO3 Lead-Free Ceramics

Lead-free piezoelectric ceramics 0.92（Bi0.5Na0.5）TiO3-0.08BaTiO3 ＋ xmol% Co3＋ （BNBT-Co, x = 0-8） are prepared by the solid state reaction method. Effects of the amount of Co^3＋ on the electrical properties and phase transition are studied. The results indicate that the addition of Co^3＋ enhances the mechanical quality factor Q^3＋ significantly, whereas the dissipation factor tanδ has a minimum value at x = 3.5. Meanwhile, addition of Co^3＋ leads to small decreases of piezoelectric constant d33, and planar electromechanical coupling kp. The present 0.92（Bio.aNao.5） TiO3-0.08BaTiO3＋3.5 moi% Co^3＋ ceramics exhibit good performance with mechanical quality factor Qm = 910, piezoelectric constant d33 = 106pC/N, planar electromechanical coupling kp =10% and dissipation factor tanδ = 1.1% at 1 kHz. Saturated polarization hysteresis loops have been obtained for BNBT-Co ceramics. Two dielectric peaks at depolarization temperature Td and Tm appear in the curves of ε33^T vs temperature for the pure BNBT ceramics. However, the first dielectric peak Td disappears after the addition of Co^3＋, which means that the transition from ferroelectric to antiferroelectric phase has been eliminated.     

A polarized micro-Raman study of a 0.65PbMg1/3Nb2/303-0.35PbTi03 single crystal

Polarized micro-Raman spectra of a 0.65PbMg_1/3Nb_2/3O₃-0.35PbTiO₃ （0.65PMN-0.35PT） single crystal poled in the [001] direction are obtained in a wide frequency range （50-2000 cm 1） at different temperatures.The best fit to the Raman spectrum at 77 K is achieved using 17 Lorenzians to convolute into it,and this is proved to be a reasonable fit.According to the group theory and selection rules of overtone and combinational modes,apart from the seven Raman modes that are from first-order Raman scattering,the remaining ones are attributed to being from second-order Raman scattering.A comparison between the experimental results and theoretical predictions shows that they are in satisfactory agreement with each other.Our results indicate that at 77 K the sample belongs to the rhombohedral symmetry with the C 5 3v （R3m） space group （Z=1）.In our study,on heating,the 0.65PMN-0.35PT single crystal undergoes a rhombohedral → tetragonal → cubic phase transition sequence.The two phase transitions occur at 340 and 440 K,which correspond to the disappearance of the soft mode near 106 cm 1 recorded in VV polarization and the vanishing of the band around 780 cm 1 in VH polarization,respectively.     

Improved multiferroic properties of La-doped 0.6BiFeO3—0.4SrTiO3 solid solution ceramics

The 0.6（Bi1-xLax）FeO 3-0.4SrTiO 3（x = 0,0.1） multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure.The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant ε r and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization（Pr） and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6（Bi0.9La0.1）FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization M r ～ 0.135 emμ/g and ferroelectricity with Pr ～ 5.94 μC/cm 2 at room temperature.     

Atomic Diffusion in Cu/Si （111） and Cu/SiO2/Si （111） Systems by Neutral Cluster Beam Deposition

The Cu films are deposited on two kinds of p-type Si （111） substrates by ionized duster beam （ICB） technique. The interface reaction and atomic diffusion of Cu/Si （111） and Cu/SiO2/Si （111） systems are studied at different annealing temperatures by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results are obtained： For the Cu/Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃ and 500℃ are 8.5 ×10^-15 cm^2.s^-1 and 3.0 ×10^-14 cm^2.s^-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2//Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 ×10^-16 cm^2.s^-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.     

Growth of oriented Pb(ZrxTi1-x)O3 thin films on glass substrates by pulsed laser deposition

Oriented crystalline Pb(Zr_xTi_1-x)O₃ (x=0.53) (PZT) thin films were deposited on metallized glass substrates by pulsed laser deposition (1060-nm wavelength Nd:YAG laser light, 10-ns pulse duration, 10-Hz repetition rate, 0.35-J/pulse and 25-J/cm² laser fluence), from a commercial target at substrate temperatures in the range 380-400 °C. Thin films of 1-3 7m were grown on Au(111)/ Pt/NiCr/glass substrates with a rate of about 1 Å/pulse on an area of 1 cm². The deposited PZT films with perovskite structure were oriented along the (111) direction, as was revealed from X-ray diffraction spectra. Fourier transform infrared spectroscopy (FTIR) was performed on different PZT films so that their vibrational modes could be determined. Piezoelectric d₃₃ coefficients up to 30 pC/N were obtained on as-deposited films. Ferroelectric hysteresis loops at 100 Hz revealed a remanent polarization of 20 7C/cm² and a coercive field of 100 kV/cm.     

Preferential orientation of modified SrBi2Nb2O9 ferroelectric thin films prepared by pulsed laser deposition

We report on the deposition of SrBi₂Nb₂O₉ and Sr_1-xNa_xBi_2-xTe_xNb₂O₉ ferroelectric thin films on Pt/TiO₂/SiO₂/(100)Si substrates using the pulsed laser deposition technique. Deposition on substrates heated to 600-700 °C produces {11l} film texture and dense films with grain sizes up to about 500 nm. The recrystallization at 700 °C of amorphous films deposited at lower temperatures enhances the contribution of the {100} and {010} orientations. These films show smaller grain size, namely 50-100 nm. {11l}-oriented Sr_1-xNa_xBi_2-xTe_xNb₂O₉ films have remnant polarization P_rۆ 7C/cm², a coercive field E_c䏐 kV/cm and dielectric constant, )𪓴. The low value of P_r is probably related to the low fraction of grains with the ferroelectric axis in the direction of the applied field, E. The recrystallized films have more grains with the ferroelectric axis parallel to E; however, they have a low resistivity which so far has prevented electrical characterization.     

Pulsed-laser deposition of Ta-doped PZT ferroelectric films for memory applications using conductive oxide La0.25Sr0.75CoO3 and SrRuO3 electrodes

New methods for fabricating highly 𘚡¢-oriented and complete 𘜏¢-textured Pb(Ta_0.05Zr_0.48Ti_0.47)O₃ (PTZT) films on Pt/TiO₂/SiO₂/Si(001) substrates by pulsed-laser deposition have been developed using conductive oxide La_0.25Sr_0.75CoO₃ and SrRuO₃ electrodes. The 𘚡¢-preferred orientated PTZT ferroelectric capacitor was not subjected to loss of its polarization after 1᎒¹⁰ switching cycles at an applied voltage of 5 V and a frequency of 1 MHz, and the 𘜏¢-textured PTZT film capacitor retains 94.7% of its polarization after 1.5᎒¹⁰ switching cycles at 5 V and 50 kHz. The PTZT capacitors using these conductive oxide electrodes have low leakage current dominated by Schottky field emission mechanism.     

0.67 PbMg1/3Nb2/3O3-0.33 PbTiO3单晶中软模模式指认

应用显微拉曼技术对弛豫型铁电体0.67PbMg1/3Nb2/3O3-0.33PbTiO3(0.67PMN-0.33PT)的偏振拉曼光谱随温度变化的研究表明,在-196到600°C温度范围内0.67PMN-0.33PT存在两次相变:三方到四方(R-T)相变和四方到立方(T-C)相变。R-T相变的特征是106cm-1软模(-196°C时)随温度的升高而湮没到80cm-1"静态"模式中。依照群论分析,0.67PMN-0.33PT的80cm-1和106cm-1(-196℃时)两个模式分别为E(1TO)和A1(1TO)模。文章对三方相的对称结构(C3v点群)在背向散射配置下不同偏振方向的拉曼散射效率进行了计算。计算结果表明晶体中的A1(1TO)和E(1TO)模式能够通过使用不同的散射配置进行识别。理论计算和实验结果相比较得到了很好的吻合。     

Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

An a-SiNx/nanocrystalline silicon [（nc-Si）/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition （PECVD） system at low temperature （250℃）. The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2 ×10^11 cm^-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNs insulator layer are obtained. The density of interface state at the midgap is calculated to be 1 ×10^10 cm^-2eV^-1 from the quasistatic and high frequency C - V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage （C- V） measurement at room temperature. An ultra-large hysteresis is observed in the C - V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.     

Spectral Hole-Burning of Eu^3＋：Y2SiO5 Crystal at 16 K

By using an Ar^＋ ion laser, a tunable Rh 6G dye laser （linewidth 0.5cm^-1） pumped by the second harmonic of a YAG：Nd laser and a Coherent 899-21 dye laser as light sources and using a monochromator, a phase-locking amplifier and a computer as the data detecting system, we detect the optical properties of Eu^3＋-doped Y2SiO5 crystal. Persistent ,spectral hole burning （PSHB） are observed in the Eu^3＋ ions spectral lines （^5 Do-T Fo transition） in the crystal at the temperature of 16K. For 15mW dye laser burning the crystal for 0.1 s spectral holes with hole width about 80 MHz both at 579.62nm and at 579.82nm are detected and the holes can remain for a long time, more than 10h.     

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Crystallized inDifferent N2/O2 Ambients

Bi3.25La0.75 Ti3O12 （BLT） ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total l eccm N2/02 mixed gas with various ratio at 750℃ for 30rain. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroeleetric properties. Alter the BLT film is annealed in 20%O2, the largest P~ value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.     

Photoluminescence investigations on the nanoscale phase transition in Pb(Mg1/3Nb2/3)O3

The temperature dependence of the photoluminescence spectra of the relaxor ferroelectric Pb(Mg_1/3Nb_2/3)O₃ has been reported. The temperature behaviours of the 1.57, 1.67 and 1.73 eV bands indicate a phase transition at 110 K. This is attributed to a structural phase transition in the charged nanoshell. Analysis of the temperature dependence of 1.67 eV band intensity with a thermal quenching model indicated the existence of a phonon mode at 1153 cm⁻¹. This mode is identified in the Raman spectra measurement. The intensity of the 1.73 eV band showing an anomalous behaviour at 210 K is attributed to a transition from a crystalline phase to an amorphous phase in the charged nanoshell.