新型PTC材料的阻温特性及其热控性能的研究

正温度系数(Positive temperature coefficient, PTC)材料是一种电阻随温度变化的热控功能材料，然而，传统的PTC材料由于高室温电阻率以及负温度系数效应而限制了其在电子设备热控领域的应用。本文基于石蜡/乙烯–醋酸乙烯酯共聚物混合基体，利用多壁碳纳米管和炭黑杂化填料的协同效应制备得到具有室温居里点、低室温电阻率和优异电阻正温度效应的新型PTC材料。研究了基体配比、填料含量对室温电阻率和PTC性能的影响，并采用羧甲基纤维素对其负温度系数效应现象进行改善。此外，对新型PTC材料的自适应热控性能进行了研究和分析。研究发现：与普通的电阻加热器相比，PTC加热器具有自适应控温能力，并且在没有任何外部控制系统的条件下可以将被控设备的温度控制在正常工作温度范围内。     

神奇的超导

电阻起源于载流子(电子或空穴)在材料中运动过程中受到的各种各样的阻尼.按照材料的常温电阻率从大到小可以分为绝缘体、半导体和导体.绝大部分金属都是良导体,他们在室温下的电阻率非常小但不为零,在10^-12 mΩ·cm量级附近.自然界是否存在电阻为零的材料呢？答案是肯定的,这就是超导体.当把超导材料降到某个特定温度以下的时候,将进入超导态,这时电阻将突降为零(图1),同时所有外磁场磁力线将被排出超导体外,导致体内磁感应强度为零,即同时出现零电阻态和完全抗磁性.超导态开始出现的温度一般称为超导临界温度,表示为T_c.微观上来说,当超导材料处于超导临界温度之下时,材料中费米面附近的电子将通过相互作用媒介而两两配对,这些电子对将同时处于稳定的低能组态,叫“凝聚体”.在外加电场驱动下,所有电子对整体能够步调一致地运动,因此超导又属于宏观量子凝聚现象.对于零电阻态,实验上已经证实超导材料的电阻率小于10^-23 mΩ·cm,在实验精度允许范围内已经可以认为是零.如果将超导体做成环状并感应产生电流,电流将在环中流动不止且几乎不衰减.超导体的完全抗磁性并不依赖于超导体降温和加场的次序,也称为迈斯纳(Meissner)效应.一个材料是否为超导体,零电阻态和完全抗磁性是必须同时具有的两个独立特征.     

无序CuZr和CuY合金的电阻和磁电阻

以熔化-旋转法制备了Cu70Zr30和Cu100-xYx( x = 28, 67)非晶带试样并在1～300 K温度范围内测量了电阻和磁电阻随温度变化的规律.非晶Cu70Zr30电阻率ρ(T)的温度系数(TCR)在整个测量温区内都是负值,并且在两个不同的温区表现出-T1/2行为.对于类似的Cu100-xYx合金系统,在1～200 K温区内也做了同类测量.在低温1～4 K, 两个不同的无序系统CuZr和CuY的 TCR都准确地表现出-T1/2行为,这表明无序系统在极低温条件下的量子相干效应.这主要应归因于在粒子-空穴通道的电子-电子相互作用.而无序Cu70Zr30在宽广的中低温区60～300 K以更大斜率表现出的-T1/2行为,可以用初始定域化理论解释.无序CuZr和CuY的低温磁电阻ρ(B,T)测量结果与定域化理论进行了拟合和讨论.     

YBa_2Cu_3O_(7-x)对氧的检测灵敏度和响应速度

研究了高温超导体 YBa2 Cu3O7- x块材和厚膜在温度区间 40 0℃到 85 0℃电阻率随环境氧分压的变化关系 ,初步探索了其作为氧传感器材料的可能性。并研究了 YBa2 Cu3O7- x在不同温度条件下对氧的检测灵敏度和响应速度。实验表明 YBa2 Cu3O7- x对氧有较强的选择性 ,同一温度下电阻率随氧分压的增大而减小 ,且有较快的响应速度。氧分压减小时电阻率增大 ,块材响应速度较慢 ,但是制成厚膜后可提高其响应速度     

利用真空变温薄膜电阻实验仪测量热电材料特性参数

利用北京交通大学理学院自主开发的VTR10型真空变温薄膜电阻实验仪对热电材料的热电阻率进行了多次测量,并用该装置精确测定了热电材料的塞贝克系数,得到了热电材料的电阻率随温度变化的曲线和塞贝克系数随温度变化的曲线.     

高温无铅BaTiO_3-(Bi_(1/2)Na_(1/2))TiO_3正温度系数电阻陶瓷阻抗和介电谱分析

采用固相反应法制备了Y2O3施主掺杂的92 mol%BaTiO3-8 mol%(Bi1/2Na1/2)TiO3(BBNT8)高温无铅正温度系数电阻(positive temperature coe?cient resistivity,PTCR)陶瓷.利用透射电镜观察材料的显微结构,发现陶瓷的显微结构主要包括晶粒和晶界两部分,观察不到明显的壳层结构.进一步利用交流阻抗谱研究了陶瓷的宏观电学性能,发现陶瓷的总电阻是晶粒和晶界两部分的贡献,而晶粒电阻很小,在居里温度以上变化不大,材料的PTCR效应主要是晶界部分的贡献.当温度高于居里温度时,随着温度的升高,晶界介电常数逐渐减小,导致势垒增加,晶界电阻增大,从而产生正温度系数效应.最后,通过测试材料的介电频谱特性,研究计算了陶瓷的室温电阻率.     

块体金属玻璃Zr46.75Ti8.25Cu7.5Ni10Be27.5的超导与负电阻温度系数

测量了块体金属玻璃Zr46.75Ti8.25Cu7.5Ni10Be27.5在退火前后其电阻值随温度的变化,测量的温度范围为1.5-300K.样品在退火前后都发现有超导现象.零磁场下其超导转变温度Tc分别为1.84和3.76K.在5-300K温度范围内,原始样品具有负的电阻温度系数.如果取Zr,Ti,Cu,Ni及Be分别贡献出1.5,1.5,0.5,0.5及两个传导电子,则可以用扩展的Faber-Ziman理论去解释原始样品的负电阻温度系数.还对块体金属玻璃Zr46.75Ti8.25Cu7.5Ni10Be27.5在温度范围5-300K之间的R(T)曲线用一个多项式进行了拟合.     

Heusler合金Cu2VAl磁性及输运性质的研究

对Heusler合金Cu2VAl多晶甩带样品进行了磁性与输运性质方面的研究.实验发现Cu2VAl在温度T为210K附近发生铁磁-顺磁相变,为弱铁磁体.输运性质的测量表明在7.2K时电阻因局域杂质超导相变而发生突变,电子和声子之间的散射是主要的散射机理.居里温度Tc以下存在侧跃导致的反常霍尔效应,并且7K附近的相变导致霍尔电阻率发生异常.     

聚酰亚胺柔性基底上磁控溅射金属铜膜的电学性能研究

为了制备用于挠性电路板中的挠性覆铜板,在聚酰亚胺上使用中频磁控溅射方法制备金属Cu膜.实验中,通过改变制备温度、衬底偏压、制备时间等工艺参数,制备出导电性符合要求的Cu薄膜.用X射线衍射仪(XRD)、扫描电镜(SEM)研究薄膜的成分、结构以及表面形貌,用触针式台阶仪、四探针电阻测量仪测量薄膜的膜厚以及电阻,并计算薄膜的电阻率.最终得到制备导电性符合工业应用标准的Cu膜的最佳工艺条件:制备温度100℃,直流偏压50 V,无脉冲偏压.     

Sn-Bi合金熔体可逆液液结构转变的研究

本文采用直流四电极电阻法研究了Sn-Bi系合金熔体在连续几轮的升降温过程中电阻率随温度的变化规律.结果表明,Sn-Bi合金熔体在连续几轮的升降温过程都出现了电阻率随温度的异常变化.由于电阻率是结构敏感物理参数之一,电阻率随温度的异常变化间接表明合金熔体发生了温度诱导的液态结构转变,而且转变具有一定的可逆性.对比纯锡和纯铋的电阻率实验结果,可以认为结构转变的可逆性主要与合金中Sn的有关.     

Spin mixing and spin-current asymmetry measured by domain wall magnetoresistance

By making a straightforward reformulation of the Levy-Zhang spin-mistracking model, we show that it is possible to extract the spin asymmetry of a current from measurements of domain wall resistance. Experiments on epitaxial films of L1(0) FePd are reported, showing that, while the micromagnetic structure of the sample is stable, the resistivity and the domain wall resistance change by a factor approximately 3 between helium and room temperature. The temperature dependence of the spin asymmetry of the current has been determined over a wide range in a single material.     

Solid-phase synthesis of solid solutions in Cu/Ni(001) epitaxial nanofilms

Solid-phase synthesis of solid solutions in the epitaxial Cu/Ni(001) bilayer film systems of compositions 3Cu: 1Ni, 1Cu: 1Ni, and 1Cu: 3Ni has been studied using the X-ray diffraction methods. The saturation magnetization and the magnetic crystallographic anisotropy constant on nickel vary in accordance with the solid solution formation. The initiation temperature of the solid solutions is about 350 °C and is independent of the Ni: Cu layer thickness ratio. The solid-phase synthesis of the solid solutions is presumably attributed to the transport of the Cu atoms to the epitaxial Ni(001) layer. It is found that the solid-phase synthesis in the Cu/Ni bilayer nanofilms and multilayers is determined by the spinodal decomposition in the Cu-Ni system.     

用范德保法测量碳化硅的电阻率和霍耳效应

应用范德保法测量了电阻率在10^-3—10²欧姆·厘米范围的n型和p型碳化硅单晶和外延层的电学性质。进行了测定条件的选择,范德保法与普通法的对照等试验。发现接触电阻的大小和稳定程度对测量结果有极大的影响。在铟、紫铜、锡、磷铜等机械接触中,铟电极具有最低的接触电阻,其他电极须经电冶成方能进行测定。在不同的电极材料和样品电流下,电阻率偏离约2%,指出,样品电流应当根据具体样品的电阻率和接触电阻加以选择。与普通法比较,范德保法精确度高,数据重复性好。测量了自室温至1000°K范围内碳化硅单晶的高温电学性质,求得氮施主的电离能为0.056电子伏。讨论了引起实验误差的一些异常现象及其产生原因。     

Synthesis and characterization of zinc titanate doped with magnesium

Zinc titanate crystals doped with magnesium have been grown by conventional solid state reaction technique using metal oxides. It is shown that they are semiconductors. The characteristics of zinc titanate samples were found to depend on the heating conditions and the amounts of additions. Our studies revealed that magnesium can replace the zinc ion and forms a solid solution in the ZnTiO₃ phase. The electrical resistivity of (Zn,Mg)TiO₃ varied with sintering temperature, and has a minimum when sintered at 900 °C. Increasing amounts of magnesium will also decrease the resistivity. A V-shaped temperature dependence of resistivity was observed. Furthermore, the dielectric constant increased with sintering temperature and decreased with increasing amounts of magnesium. It also shows a maximum Q factor at a frequency of 8 GHz for the sample of (Zn_0.9, Mg_0.1)TiO₃ sintered at 900 °C.     

Electrical conduction in Cu/Mn multilayer films

Metallic superlattices of copper and manganese have been synthesized on glass and mica substrates by a sequential evaporation technique. The electrical resistivity and the temperature coefficient of resistance (TCR) of layered Cu/Mn has been studied for various thicknesses (d) in the range 2–6 nm by varying the number of double layers (n) from 5–35. The transition from a negative to positive TCR has been observed ford >5 nm. The thickness dependence of room temperature resistivity ( _RT) and TCR shows oscillatory behaviour.     

Magnetic susceptibility and electrical resistivity of dilute liquid copper - iron alloys

Electrical resistivity and magnetic susceptibility measurements on dilute liquid CuFe alloys are reported. Small additions of Fe increase the resistivity of liquid Cu in a drastic manner, whereas the temperature coefficient is found to be decreased. Due to the localized magnetic moments of the impurity atoms the diamagnetism of Cu is converted into a strong temperature-dependent paramagnetism indicating about 3.5 unpaired d electrons per Fe atom. The electronic properties of CuFe resemble those of liquid CuMn and AuFe which, in the solid state, are known for their Kondo-like behaviour. The experimental findings are tentatively interpreted in terms of spin-disorder scattering with special emphasis on the negative temperature coefficient of the impurity resistivity.     

Transport anomalies and the role of pseudogap in the 60-K phase of YBa(2)Cu(3)O(7-delta)

We report the result of our accurate measurements of the a- and b-axis resistivity, Hall coefficient, and the a-axis thermopower in untwinned YBa(2)Cu(3)O(y) single crystals in a wide range of doping. It is found that both the a-axis resistivity and the Hall conductivity show anomalous dependences on the oxygen content y in the 60-K phase below the pseudogap temperature T(*). The complete data set enables us to narrow down the possible pictures of the 60-K phase, with which we discuss a peculiar role of the pseudogap in the charge transport.     

Electrical transport properties of dense bulk YBa2Cu4O8 produced by hot isostatic pressing

Highly dense sintered YBa₂Cu₄O₈ has been produced by hot isostatic pressing (HIP). The electrical resistivity of this material has been measured as a function of temperature T and pressure in the range 40–650 K and 0–0.7 GPa. Both the temperature dependence and the pressure dependence of are found to be well described by a model based on the standard Bloch-Grüneisen theory. It is pointed out that is liner in T only under isobaric conditions, while is strongly nonlinear in all high-T_c superconductors under isochoric (constant volume) conditions. The critical current density of the material is 900 A/cm² at 4 K, while the resistivity is 630 μΩ cm at 294 K.