Activated transport in the exciton condensate at balanced and imbalanced densities measured in drag and counter-flow configuration

We observe the total filling factor ν_T=1 exciton condensate in independently contacted bilayer two-dimensional electron systems in samples with minute tunnel coupling. At balanced electron densities in the layers, we find for both drag and counter-flow current configurations, thermally activated transport with a monotonic increase of the activation energy for d/ℓ_B<1.65 with activation energies up to 0.4 K. In the imbalanced system the activation energies show a striking asymmetry around the balance point, implying that the gap to charge excitations is considerably different in the separate layers that form the bilayer condensate. This indicates that the measured activation energy is neither the binding energy of the excitons, nor their condensation energy.     

Bilayer counterflow transport at filling factor 1 in the strong interacting regime

We review magneto-transport properties of interacting GaAs bilayer hole systems, with very small inter-layer tunneling, in a geometry where equal currents are passed in opposite directions in the two, independently contacted layers (counterflow). In the quantum Hall state at total bilayer filling ν=1 both the longitudinal and Hall counterflow resistances tend to vanish in the limit of zero temperature, suggesting the existence of a superfluid transport mode in the counterflow geometry. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity (ρ_xy) decreases at a given temperature while the counterflow longitudinal resistivity (ρ_xx), which is much larger than ρ_xy, hardly depends on density. Our data suggest that the counterflow dissipation present at any finite temperature is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.     

Nuclear-spin-lattice relaxation in a bilayer quantum Hall system

We examined the electron spin degree of freedom around the total Landau-level filling factor ν=1 in a bilayer system via nuclear spins. In a balanced bilayer system, nuclear-spin-lattice relaxation rate 1/T₁, which probes low-energy electron spin fluctuations, increases gradually as the system is driven from the quantum Hall (QH) state through a phase transition to the compressible state. This result demonstrates that the electron spin degree of freedom is not frozen either in the QH or compressible states. Furthermore, as the density difference between the two layers is increased from balanced bilayer to monolayer configurations, 1/T₁ around ν=1 shows a rapid yet smooth increase. This suggests that pseudospin textures around the bilayer ν=1 system evolves continuously into the spin texture for the monolayer system.     

Thermopower evidence for Wigner crystallization in the insulating phase of two-dimensional GaAs bilayer hole systems

We report on low-temperature thermopower measurements of interacting GaAs bilayer hole systems in the limit of no interlayer tunneling. These systems exhibit a reentrant insulating phase near the many-body quantum Hall state (QHS) at total filling factor ν=1, when both layers have the same density. The diffusion thermopower is expected to diverge as T^-1 in the presence of an energy gap (Wigner crystal) or to vanish in the case of a disordered induced mobility gap. Our results show that, as the temperature is decreased, the diffusion thermopower exhibits a T^-1 dependence in the insulating phase around ν=1. This behavior clearly indicates the opening of an energy gap at low temperature, in agreement with the formation of a pinned Wigner solid. Finally, we report on the T-dependence of the thermopower at ν=1.     

Studies of the quantum Hall to quantum Hall insulator transition in InSb-based 2DESs

The temperature dependence of ρ_xx is studied in the vicinity of the quantum Hall to quantum Hall insulator transition (ν=1→0) in InSb/InAlSb based 2DESs. ρ_xx displays a symmetric temperature dependence about the transition with on the QH side and on the insulating side. A plot of 1/T₀ for successive ν displays power-law divergence with 1/T₀∝|ν−ν_c|^−γ,² with γ=2.2±0.3. This critical behavior in addition to the behavior expected of the quantum transport regime confirms that the QH/QHI transition is indeed a good quantum phase transition.     

Spin-dependent resistivity and quantum Hall ferromagnetism in two-dimensional electrons confined to AlAs quantum wells

We observe a strong dependence of the amplitude and field position of longitudinal resistivity (ρ_xx) peaks in the spin-resolved integer quantum Hall regime on the spin orientation of the Landau level (LL) in which the Fermi energy resides. The amplitude of a given peak is maximal when the partially filled LL has the same spin as the lowest LL, and amplitude changes as large as an order of magnitude are observed as the sample is tilted in field. In addition, the field position of both the ρ_xx peaks and plateau–plateau transitions in the Hall resistance shift depending on the spin orientation of the LLs. The spin dependence of the resistivity points to a new explanation for resistivity spikes, associated with first-order quantum Hall ferromagnetic transitions, that occur at the edges of quantum Hall states.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

Collapse of quantized Hall resistance and breakdown of dissipationless state in the integer quantum Hall effect: filling factor dependence

Magnetic field dependence of critical current for collapse of quantized Hall resistance I_cr(collapse) and critical current for breakdown of dissipationless state I_cr(breakdown) have been measured near the filling factor ν=4 of Landau levels in a GaAs/AlGaAs heterostructure Hall bar. The difference I_cr(breakdown)−I_cr(collapse) decreases against the increase and the decrease in ν from 4 and the critical behavior disappears outside of the region 3.85<ν<4.15.     

Changes in electrical properties in α- and γ-exposed PADC track detector

The changes in the dielectric properties and temperature dependence of the d.c. conductivity of α-exposed poly allyl diglycol carbonate (PADC) have been studied. On α-irradiation the dielectric constant (′) as a function of frequency has been found to decrease significantly. The temperature dependence of resistivity in pristine and γ-irradiated samples is of the form ρ(T)=ρ_∝ exp(T₀/T) which can be attributed to conduction of thermally generated carriers. In case of (γ+α) irradiated samples the temperature dependence of resistivity is of the form ρ(T)=ρ_∝ exp(T₀/T)^1/2 which is due to one-dimensional hopping of carriers.     

Electrical transport, magnetic and thermal properties of icosahedral Al–Pd–Mn quasicrystals

We report measurements of electrical resistivity (ρ), Hall coefficient (R_H), magnetization (M) and specific heat (C_p(T)) of high-quality icosahedral Al_70.4Pd_20.8Mn_8.8 phases with different thermal treatment. An improvement in the quasi-crystallinity upon the annealing treatment caused a drastic increase in ρ up to 7000 μΩ cm accompanied by a very small electronic specific heat coefficient γ. The low temperature ρ(T) data has been analyzed in terms of weak localization and electron–electron interaction effects. The Hall resistivity (ρ_H) is found to be strongly temperature-dependent and varies linearly with the magnetization (M) for the same field and temperature. Magnetization measurement reveals that more conductive samples are more magnetic and vice versa. Magnetic susceptibility (χ) data of all the annealed samples agrees with the Curie–Weiss-like behavior implying the existence of localized moments. The negative Curie–Weiss temperature (θ) indicates strong antiferromagnetic coupling between individual Mn atoms. The magnetic Mn concentration is found to be small, ranging from 1.73×10^-4 for the less magnetic sample studied up to 3×10^-3 for the more magnetic one. The small electronic specific heat coefficient obtained for all the samples suggests a significant reduction in the electronic density of states (DOS) at the Fermi level (E_F) upon thermal annealing treatment.     

Exchange interaction effects in the crossing of spin-polarized Landau levels in a silicon-germanium heterostructure: transition into a ferromagnetic state

The crossing of spin-split Landau levels in a Si/SiGe heterostructure is investigated by means of magneto-transport experiments in tilted magnetic fields. We observe a transition from a paramagnetic into a fully spin polarized state. During the transition strongly enhanced maxima in the transverse resistivity ρ_xx appear when the parallel field component is oriented along the Hall bar. We assign this effect to an energy level structure strongly modified by exchange interaction effects between different Landau levels. Surprisingly the maximum in ρ_xx totally disappears when the parallel field component is perpendicular to the Hall bar.     

Stability of soliton lattice phase in the bilayer quantum Hall state under tilted magnetic fields

The bilayer quantum Hall (QH) state at the filling factor ν=1 shows various fascinating quantum phenomena due to the layer degree of freedom called ‘pseudospin’. We report an experimental evidence of the soliton lattice (SL) phase, which is a domain structure of pseudospin, by the appearance of a local maximum of magnetoresistance near the ν=1 QH state. We investigate the stability of the SL phase by changing B and the total electron density n_T. Detailed magnetotransport measurements under tilted magnetic fields were carried out to obtain a B–n_T plane phase diagram containing the C, IC and SL phases. We found the SL phase is only stable at low n_T region. Namely, the C–SL–IC phase transition occurs only at low n_T region as B increases. On the contrary, the C–IC phase transition directly occurs without passing through the SL phase at high n_T region.     

Spectroscopic determination of the order parameter of coupled bilayers at =1

We report inelastic light scattering measurements of spin excitations on coupled electron bilayers with relatively large tunneling gaps at total filling factor ν_T=1. We show that the pseudospin polarization order parameter, where the pseudospin labels the occupation of symmetric and antisymmetric levels, can be determined from the energy of long wavelength spin excitations. Our experiments indicate that the order parameter in the quantum Hall ground state collapses at the incompressible–compressible phase transition. The latter is driven by decreasing the tunneling gap through the application of an in-plane magnetic field.     

An energy-momentum tensor in gauge theories

We consider the renormalization of the twist two, dimension four gauge invariant operator O_μν⁽¹⁾ = − F_μσF_νσ − g_{μν 0}. By using the general theory of renormalization of gauge invariant operators, we find the gauge noninvariant operator O⁽²⁾ with which it mixes. We construct a finite combination of O⁽¹⁾ and O⁽²⁾ and show that it is an acceptable energy momentum tensor for gauge theories. We compare our energy momentum tensor with that constructed by Freedman, Muzinich, and Weinberg.     

Carbon suboxide as a semirigid bender

The semirigid bender Hamiltonian [Bunker and Landsberg, J. Mol. Spectrosc. 67, 374–385 (1977)] is used to fit the rotation-vibration energy level separations in the carbon suboxide molecule C₃O₂. We allow the CC bond lengths and CCO bond angles to change with the CCC bending angle ρ. A very good fit to the energy levels is obtained and, in particular, the B values are systematically fitted better than when the rigid bender is used. The dependence of the effective CCC bending potential function on the vibrations ν₂, ν₃, and ν₄ is determined, and we find that excitation of ν₃ or ν₄ raises the barrier to linearity whereas excitation of ν₂ lowers it. These results can be understood by considering the ρ dependence of the G-matrix elements. We determine that the barrier to CCC linearity in the zero-point vibrational state is 28 cm⁻¹ but until more data are available for the ν₁, ν₅, and ν₆ vibrations we cannot precisely determine the true barrier. However, it has been previously shown that the barrier is little affected by excitation of ν₁ or ν₅, and that it is reduced by 10–15 cm⁻¹ by excitation of ν₆. From these results we deduce that the barrier to CCC linearity in the true bending potential function is 33 cm⁻¹ with an uncertainty of about 5 cm⁻¹. Thus the equilibrium structure is bent at the central carbon atom; the equilibrium CCC angle is 157°.     

Ultra-low temperature study of the even-denominator FQHE state

We present experimental data showing unambiguously an even-denominator fractional quantum Hall effect (FQHE) state at . At a bath temperature T_b=8 mK, we observe a Hall plateau quantized to a value of 2h/5e² with an uncertainty smaller than 2 parts in 10⁶ and a vanishing R_xx (R_xx=1.7±1.7 Ω). The thermal activation energy gaps Δ at Landau level filling factors , and are 0.11, 0.10, and 0.055 K, respectively. Adding a disorder broadening (typically 2 K) to these values, we deduce that all three FQHE states have probably very similar energy gaps. The electron heating experiment shows that the 2D electrons are efficiently cooled to the bath temperature for T_b8 mK. We also explore the density dependence of the activation gap at . Preliminary results at T_b25 mK show that the state is very sensitive to disorder.     

Activation energy and hall-coefficient measurements in lightly dopedn-InP in the thermal freeze-out region

Summary The direct-current resistivity, β, and Hall coefficient,R _H, of lightly dopedn-type InP samples were measured at temperatures (T) down to 12K and magnetic fields up to 4.8 kG. A sharp exponential increase in β, asT was decreased, was observed for temperatures below 80 K. The Hall coefficient showed a similar trend,i.e. R _H increased sharply asT was reduced below 80 K. This is attributed to the freeze-out of conduction electrons onto their donor sites. The donor activation energy,E _d, calculated from the temperature dependence of the resistivity, was less than the theoretical prediction. An enhanced dielectric constant would be a possible candidate for such behaviour. The initial decrease in β (asT is reduced) recorded in the higher-temperature region is due to impurity scattering probably combined with lattice scattering. The authors of this paper have agreed to not receive the proofs for correction.     

High-accuracy frequency atlas of 13C2H2 in the 1.5 μm region

A pair of 1.5 μm semiconductor laser frequency standards have been developed for optical telecommunications use, stabilised to Doppler-free transitions of the ν₁ + ν₃ and ν₁ + ν₂ + ν₄ + ν₅ combination bands of ¹³C₂H₂. The Allan deviation σ/f for a laser locked to line P(10) of the former band follows a slope of 1.6 × 10⁻¹²τ^−1/2, reaching a minimum of 5.7 × 10⁻¹⁴ at τ = 4000 s. The absolute frequencies of 61 lines of the ν₁ + ν₃ band and 43 lines of the ν₁ + ν₂ + ν₄ + ν₅ band, covering the spectral region 1520 nm to 1552 nm, have been measured by use of a combined frequency chain and femtosecond comb, together with a passive optical frequency comb generator. The mean uncertainties for the line frequencies within each band are 1.4 kHz for the ν₁ + ν₃ band and 1.9 kHz for the ν₁ + ν₂ + ν₄ + ν₅ band, representing improvements on the precision of previously published data by factors of 100 and 10⁴, respectively. Improved values of the rotational constant B″ and centrifugal distortion coefficients D″, H″ and L″ of the vibrational ground state are presented.This article is published with the permission of the Controller of HMSO and the Queen’s Printer of Scotland     

Quantum transport study of canted antiferromagnetic phase in the bilayer quantum Hall state

We examine the ν=2 bilayer quantum Hall (QH) state in clean two-dimensional electron systems (2DESs) to study effects due to not only the layer degree of freedom called pseudospin but also the real spin degree of freedom. The novel canted antiferromagnetic phase (CAF phase) has been predicted to emerge from subtle many-body electron interactions between the singlet (S) and ferromagnet (F) phases. Though several experiments indicate an onset of the CAF phase, a systematic transport study is not yet to be demonstrated. We have carried out magnetotransport measurements of the ν=2 bilayer QH state using a sample with tunneling energy . Activation energy was precisely measured as a function of the total density of the 2DES and the density difference between the two layers. Results support an appearance of the CAF phase between the S and F phases.     

Frequency-dependent Hall effect in spintronic systems under zero magnetic field

It is shown that in an electronic system with finite Rashba coupling and in the absence of external magnetic field, the Hall resistivity (ρ_xy) is finite at both zero and finite frequencies. This Hall resistivity is determined by the reactive part (real part) of the inverse dielectric functions. This allows us to probe the real part of the dielectric function in a spintronic system by using a transport measurement.