High-efficiency Nd:GdVO4 laser at 1341 nm under 880 nm diode laser pumping into the emitting level

Highly efficient 1341 nm continuous-wave laser under 880 nm diode laser pumping in Nd:GdVO₄ crystal is reported. Comparative results obtained by the traditional pumping at 808 nm were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power under 880 nm pumping was 34.9% higher and 12.6% lower than those of 808 nm pumping. A high slope efficiency of 49.1% was achieved under 880 nm pumping, with an optical-to-optical conversion efficiency of 41.7%.     

High-efficiency Nd:YVO4 laser emission under direct pumping at 880 nm

We report a high-efficiency Nd:YVO₄ laser pumped by an all-solid-state Q-switched Ti:Sapphire laser at 880 nm in this paper. Output power at 1064 nm with different-doped Nd:YVO₄ crystals of 0.4-, 1.0- and 3.0-at.% under the 880 nm pumping was measured, respectively. Comparative results obtained by the traditional pumping at 808 nm into the highly absorbing ⁴F_5/2 level were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power of the 1.0-at.% Nd:YVO₄ laser under the 880 nm pumping was 17.5% higher and 11.5% lower than those of 808 nm pumping. In a 4-mm-thick, 1.0-at.% Nd:YVO₄ crystal, a high slope efficiency of 75% was achieved under the 880 nm pumping, with an optical-to-optical conversion efficiency of 52.4%.     

High-efficiency direct-pumped Nd:YVO4-LBO laser operating at 671 nm

The continuous-wave high-efficiency laser emission from Nd:YVO₄ at the fundamental wavelength of 1342 nm and its 671 nm second harmonic obtained by intra-cavity frequency doubling in an LBO nonlinear crystal are investigated under pumping by diode laser at 880 nm (on the ⁴F_3/2→⁴I_13/2 transition). The end-pumped Nd:YVO₄ crystal yielded a continuous-wave output power of 9.6 W at 1342 nm for 18.9 W of absorbed pump power. The slope efficiency measured with respect to the absorbed pump power is 60%. An output of 5.5 W at 671 nm was obtained by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 29%. Comparative results obtained for the pump with a diode laser at 808 nm (on the ⁴F_5/2→⁴I_13/2 transition) are given in order to prove the advantages of the 880 nm wavelength pumping.     

Compact 7.8-W 1-GHz-repetition-rate passively mode-locked TEM00 Nd:YVO4 laser under 880 nm diode direct-in-band pumping

We demonstrate a compact high-power passively mode-locked TEM₀₀ Nd:YVO₄ laser with 1 GHz repetition rate by 880 nm diode direct-in-band pumping. At the absorbed pump power of 19.9 W, a stable mode-locked output power of 7.8 W was obtained with the pulse width of 21.4 ps and a beam quality factor of M² < 1.5, corresponding to an optical-optical conversion efficiency of 39.2%.     

Efficient 1047 nm CW laser emission of Nd:YLF under direct pumping into the emitting level

We demonstrate a 1047 nm Nd:LiYF₄ (Nd:YLF) laser by directly pumping into the upper lasing level with a tunable Ti:Sapphire laser. The results obtained for direct upper laser level pumping at 863, 872 and 880 nm of Nd:YLF were compared with traditional 806 nm pump band excitation. Highly efficient 1047 nm continuous-wave (CW) laser emission under direct pumping at 880 nm in an 8 mm thick, 1.0 at.% Nd:YLF crystal is obtained. The slope efficiency is improved from 55.6% for traditional pumping at 806 nm to 76.3% for direct pumping at 880 nm.     

1097 nm Nd:YVO4 self-Raman laser

An acousto-optically Q-switched self-Raman laser emitting at 1097 nm is demonstrated with a c-cut Nd:YVO₄ crystal, using a fiber-coupled 880 nm diode laser as the pumping source. Raman laser performances in concave-plane and plane-plane oscillating cavities are studied and compared. With an absorbed diode power of 12.4 W and a pulse repetition rate of 50 kHz, the highest output power of 1.45 W is obtained from the plane-plane cavity, corresponding to an optical-to-optical conversion efficiency of 11.7%.     

Comparison of 885 nm pumping and 808 nm pumping in Nd:CNGG laser operating at 1061 nm and 935 nm

A Nd:CNGG laser operated at 935 nm and 1061 nm pumped at 885 nm and 808 nm, respectively, is demonstrated. The 885 nm direct pumping scheme shows some advantages over the 808 nm traditional pumping scheme. It includes higher slope efficiency, lower threshold, and better beam quality at high output power. With the direct pumping, the slope efficiency increases by 43% and the threshold decreases by 10% compared with traditional pumping in the Nd:CNGG laser operated at 935 nm. When the Nd:CNGG laser operates at 1061 nm, the direct pumping increases the slope efficiency by 14% with a 20% reduction in the oscillation threshold.     

Laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173 nm

A laser diode pumped actively Q-switched Nd:GdVO₄ self-Raman laser operating at 1173 nm is presented. The maximum output power was 2.26 W at an incident pump power of 18 W, with the corresponding optical conversion efficiency of 12.6%. Two different resonator configurations were investigated in order to achieve high output power and efficiency.     

Compact efficient 1.5 W continuous wave Nd:YVO4/LBO blue laser at 457 nm

A compact folded three-mirror cavity with length of 100 mm is optimized to obtain high efficient 457 nm laser. When the incident pump power into Nd:YVO₄ is 16.3 W, as high as 1.52 W continuous wave 457 nm blue laser is achieved by LBO intracavity frequency doubled. The optical-to-optical conversion efficiency is greater than 9.3%.     

Highly efficient intracavity frequency-doubled Nd:GdVO4-LBO red laser at 670 nm under direct 880 nm pumping

We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:GdVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1340 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 16.2 W, as high as 5.1 W of continuous wave output power at 670 nm is achieved with 15-mm-long LBO. The optical-to-optical conversion efficiency is up to 0.31, and the fluctuation of the red output power was better than 3.0% in the given 30 min. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Passively mode-locked Nd：GdVO4 laser at 912nm

This paper demonstrates the passively mode-locked Nd：GdVO4 laser operating on the ^4F3/2-^4I9/2 transition at 912 nm by using a semiconductor saturable-absorber mirror for passive mode locking, stable continuous wave modelocked 912nm laser was achieved with a repetition rate of 176 MHz. At the incident pump power of 17.7W, 22.6mW average output power of stable mode-locked laser was obtained with a slope efficiency of 0.3%.     

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm

We have demonstrated the stable mode-locked Nd:GdVO₄ laser operating on the ⁴F_3/2-⁴I_9/2 transition at 912 nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128 mw at an incident pump power of 19.7 W.     

Diode-pumped Nd:LuVO4-Nd:YLiF4 crystals blue laser at 489 nm by intracavity sum-frequency-mixing

We present a laser architecture to obtain continuous-wave blue radiation at 489 nm. An 809 nm diode-pumped the Nd:LuVO₄ crystal emitting at 916 nm. A part of the pump power was then absorbed by the Nd:LuVO₄ crystal. The remaining was used to pump the Nd:YLiF₄ (Nd:YLF) crystal emitting at 1047 nm. Intracavity sum-frequency mixing at 916 and 1047 nm was then realized in a LiB₃O₅ (LBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 425 mW at 489 nm with a pump laser diode emitting 18.4 W at 809 nm.     

Highly efficient Nd:YAG/LBO laser at 473 nm under direct 885-nm diode laser pumping

<正>In diode pumped Nd:YAG lasers,the quantum defect is the most important parameter determining the thermal load of the laser crystal,which can be dramatically reduced by pumping directly into the upper laser level.A compact folded three-mirror cavity with a length of 105 mm is optimized to obtain a highly efficient 473-nm laser.When the absorbed pump power(with 15.8-W incident pump power) at 885 nm into Nd:YAG is 10 W,a continuous-wave 473-nm blue laser as high as 2.34 W is achieved by LBO intra-cavity frequency doubled.The optical-to-optical conversion efficiency is 14.8%.To the best of our knowledge, this is the highest efficiency at 473 nm by an intra-cavity doubled frequency Nd:YAG laser.     

Continuous-wave high-power Nd:YAG-KNbO3 laser at 473 nm

A continuous-wave high-power Nd:YAG laser operating on the ⁴F_3/2→⁴I_9/2 transition at 946 nm and intracavity frequency-doubled to 473 nm by a KNbO₃ nonlinear crystal at room temperature is reported. The Nd:YAG laser outputs a randomly polarized beam of 3.8 W maximum power (38% optical-to-optical efficiency and 44% slope efficiency with respect to the absorbed pump power) at the 946 nm fundamental wavelength. Intracavity frequency-doubling with a 2.0-mm thick KNbO₃ crystal in a linear resonator yielded 159-mW single-ended blue-output with 4.8% optical-to-optical conversion efficiency versus the absorbed pump power. The 473-nm maximum power of 418 mW with 11.6% optical-to-optical conversion efficiency in absorbed power was obtained from a V-type resonator; the overall optical-to-optical conversion efficiency was 6.7%, while the conversion of the available infrared power reached 50%.     

Highly efficient double-ended diffusion-bonded Nd:YVO4 1525-nm eye-safe Raman laser under direct 880-nm pumping

A highly efficient 880-nm diode-pumped actively Q-switched eye-safe laser at 1525 nm with a double-ended diffusion-bonded YVO₄–Nd:YVO₄–YVO₄ crystal as the self-Raman medium is demonstrated. As high as 19.2% diode-to-Stokes optical conversion efficiency is obtained with an absorbed pump power of 5.2 W at a pulse repetition rate of 20 kHz.     

High power diode-pumped passively Q-switched and mode-locking Nd:GdVO4 laser at 912 nm

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.     

Efficient CW Nd:GdVO<Subscript>4</Subscript>-BiBO deep-blue laser at 456 nm under direct 888 nm diode laser pumping

We report an efficient laser emission on the 912 nm ⁴ F _3/2 to ⁴ I _9/2 transition in Nd:GdVO₄ under the pump with diode lasers at 888 nm. Continuous wave (CW) 4.91 W output power at 912 nm is obtained under 18.3 W of incident pump power; the slope efficiency with respect to the incident pump power was 57.5%. Moreover, intracavity frequency doubling with BiB₃O₆ (BiBO) nonlinear crystal yielded 1.33 W of deep-blue light at 456 nm.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

800 mW/1484 nm highly efficient two-cascaded phosphosilicate Raman fiber laser pumped by Nd:YVO4 solid-state laser

Using 1064 nm CW Nd:YVO₄ solid-state laser as a pump, 1-km phosphosilicate fiber and cascaded cavities with two pairs of fiber Bragg grating mirrors for 1239 and 1484 nm, we obtained a CW 800 mW/1484 nm Raman fiber laser (RFL) for an actual incident pump power of about 2 W (Nd:YVO₄ power of 6.90 W). The conversion efficiency is as high as 40%. To the best of our knowledge, this is the highest conversion efficiency of RFL pumped by solid-state laser. The output power instability at 1484 nm in half an hour is less than 3%. In addition, the numerical simulations are also performed. Good agreement between the results of numerical simulation and the results of the experiment has been demonstrated.