High-efficiency direct-pumped Nd:YVO4-LBO laser operating at 671 nm

The continuous-wave high-efficiency laser emission from Nd:YVO₄ at the fundamental wavelength of 1342 nm and its 671 nm second harmonic obtained by intra-cavity frequency doubling in an LBO nonlinear crystal are investigated under pumping by diode laser at 880 nm (on the ⁴F_3/2→⁴I_13/2 transition). The end-pumped Nd:YVO₄ crystal yielded a continuous-wave output power of 9.6 W at 1342 nm for 18.9 W of absorbed pump power. The slope efficiency measured with respect to the absorbed pump power is 60%. An output of 5.5 W at 671 nm was obtained by frequency doubling, resulting in an optical-to-optical efficiency with respect to the absorbed pump power of 29%. Comparative results obtained for the pump with a diode laser at 808 nm (on the ⁴F_5/2→⁴I_13/2 transition) are given in order to prove the advantages of the 880 nm wavelength pumping.     

High-efficiency Nd:GdVO4 laser at 1341 nm under 880 nm diode laser pumping into the emitting level

Highly efficient 1341 nm continuous-wave laser under 880 nm diode laser pumping in Nd:GdVO₄ crystal is reported. Comparative results obtained by the traditional pumping at 808 nm were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power under 880 nm pumping was 34.9% higher and 12.6% lower than those of 808 nm pumping. A high slope efficiency of 49.1% was achieved under 880 nm pumping, with an optical-to-optical conversion efficiency of 41.7%.     

Diode-pumped passively Q-switched 912 nm Nd:GdVO4 laser and pulsed deep-blue laser by intracavity frequency-doubling

A diode-end-pumped passively Q-switched 912 nm Nd:GdVO₄/Cr⁴⁺:YAG laser and its efficient intracavity frequency-doubling to 456 nm deep-blue laser were demonstrated in this paper. Using a simple V-type laser cavity, pulsed 912 nm laser characteristics were investigated with two kinds of Cr⁴⁺:YAG crystal as the saturable absorbers, which have the different initial transmissivity (T_U) of 95% and 90% at 912 nm. When the T_U = 95% Cr⁴⁺:YAG was used, as much as an average output power of 2.8 W 912 nm laser was achieved at an absorbed pump power of 34.0 W, and the pulse width and the repetition rate were ∼ 40.5 ns and ∼ 76.6 kHz, respectively. To the best of our knowledge, this is the highest average output power of diode-pumped passively Q-switched Nd³⁺-doped quasi-three-level laser. Employing a BiBO as the frequency-doubling crystal, 456 nm pulsed deep-blue laser was obtained with a maximum average output power of 1.2 W at a repetition rate ∼ 42.7 kHz.     

High-efficiency Nd:YVO4 laser emission under direct pumping at 880 nm

We report a high-efficiency Nd:YVO₄ laser pumped by an all-solid-state Q-switched Ti:Sapphire laser at 880 nm in this paper. Output power at 1064 nm with different-doped Nd:YVO₄ crystals of 0.4-, 1.0- and 3.0-at.% under the 880 nm pumping was measured, respectively. Comparative results obtained by the traditional pumping at 808 nm into the highly absorbing ⁴F_5/2 level were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power of the 1.0-at.% Nd:YVO₄ laser under the 880 nm pumping was 17.5% higher and 11.5% lower than those of 808 nm pumping. In a 4-mm-thick, 1.0-at.% Nd:YVO₄ crystal, a high slope efficiency of 75% was achieved under the 880 nm pumping, with an optical-to-optical conversion efficiency of 52.4%.     

1097 nm Nd:YVO4 self-Raman laser

An acousto-optically Q-switched self-Raman laser emitting at 1097 nm is demonstrated with a c-cut Nd:YVO₄ crystal, using a fiber-coupled 880 nm diode laser as the pumping source. Raman laser performances in concave-plane and plane-plane oscillating cavities are studied and compared. With an absorbed diode power of 12.4 W and a pulse repetition rate of 50 kHz, the highest output power of 1.45 W is obtained from the plane-plane cavity, corresponding to an optical-to-optical conversion efficiency of 11.7%.     

Efficient CW Nd:GdVO<Subscript>4</Subscript>-BiBO deep-blue laser at 456 nm under direct 888 nm diode laser pumping

We report an efficient laser emission on the 912 nm ⁴ F _3/2 to ⁴ I _9/2 transition in Nd:GdVO₄ under the pump with diode lasers at 888 nm. Continuous wave (CW) 4.91 W output power at 912 nm is obtained under 18.3 W of incident pump power; the slope efficiency with respect to the incident pump power was 57.5%. Moreover, intracavity frequency doubling with BiB₃O₆ (BiBO) nonlinear crystal yielded 1.33 W of deep-blue light at 456 nm.     

A comparative study of continuous laser operation on the F3/2-I9/2 transitions of Nd:GdVO4 and Nd:YVO4 crystals

A comparative study of Nd:GdVO₄ and Nd:YVO₄ crystal lasers pumped by a fiber-coupled diode array has been conducted at the ⁴F_3/2-⁴I_9/2 transitions wavelengths of 912 nm and 914 nm, as well as when intracavity frequency-doubled to 456 nm and 457 nm, respectively. At the fundamental wavelength of 912 nm and second harmonic wavelength of 456 nm, maximum output powers from the Nd:GdVO₄ crystal laser were 7.85 W and 4.6 W at a pump power of 29 W. All the results obtained from Nd:GdVO₄ were superior to those of Nd:YVO₄, indicating that Nd:GdVO₄ is a more efficient laser crystal than Nd:YVO₄ for laser operation on the ⁴F_3/2-⁴I_9/2 transitions.     

Efficient continuous-wave 908 nm Nd:YLF laser emission under direct 880 nm pumping

The quasi-three-level 908-nm continuous-wave laser emission under direct diode laser pumping at 880 nm into emitting level ⁴ F _3/2 of Nd:YLF have been demonstrated. An end-pumped Nd:YLF crystal yielded 4.7 W of output power for 11.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 43.3%. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880-nm wavelength pumping.     

Continuous-wave high-power multi-pass pumped thin-disc Nd:GdVO4 laser

A thin-disc Nd:GdVO₄ laser in multi-pass pumping scheme was developed. Continuous-wave output power of 13.9 W at 1.06 μm for an absorbed power at 808 nm of 22 W was demonstrated from a 250-μm thick, 0.5-at.% Nd:GdVO₄ in a 4-pass pumping; the slope efficiency in absorbed power was 0.65, or 0.47 in input power. Output performances were also investigated under diode laser pumping at 879 nm, directly into the emitting ⁴F_3/2 level: maximum power of 3.6 W was obtained at 6.2 W of absorbed power with 0.69 slope efficiency. Compared with pumping at 808 nm, into the highly absorbing ⁴F_5/2 level, improvements of laser parameter in absorbed power (increase of slope efficiency, decrease of threshold) were obtained, showing the advantages of the pumping into the emitting level. However, the laser performances expressed vs. the incident power were modest owing to the low absorption efficiency at 879 nm. Thus, increased number of passes of the medium would be necessary in order to match the performances in input power obtained under 808-nm pumping.     

Compact 7.8-W 1-GHz-repetition-rate passively mode-locked TEM00 Nd:YVO4 laser under 880 nm diode direct-in-band pumping

We demonstrate a compact high-power passively mode-locked TEM₀₀ Nd:YVO₄ laser with 1 GHz repetition rate by 880 nm diode direct-in-band pumping. At the absorbed pump power of 19.9 W, a stable mode-locked output power of 7.8 W was obtained with the pulse width of 21.4 ps and a beam quality factor of M² < 1.5, corresponding to an optical-optical conversion efficiency of 39.2%.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

494.5 nm generation by sum-frequency mixing of diode pumped neodymium lasers

We report a coherent radiation at 494.5 nm by intra-cavity sum-frequency generation of 912 nm Nd:GdVO₄ laser and 1080 nm Nd:CaYAlO₄ laser. Blue laser is obtained by using a doubly folded cavity, type-II critical phase matching KTP (KTiOPO₄) crystal sum-frequency mixing. With total pump power of 33 W (13.8 W pump power for 1080 nm Nd:CaYAlO₄ laser and 19.2 W pump power for 912 nm Nd:GdVO₄ laser), TEM₀₀ mode blue laser at 494.5 nm of 1.6 W is obtained. The power stability in 30 min is better than 3.5%.     

Highly efficient intracavity frequency-doubled Nd:GdVO4-LBO red laser at 670 nm under direct 880 nm pumping

We report the efficient compact red laser at 670 nm generation by intracavity frequency doubling of a continuous wave laser operation of a diode direct pumped Nd:GdVO₄ laser on the ⁴ F _3/2 → ⁴ I _13/2 transition at 1340 nm. An LBO crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an absorbed pump power of 16.2 W, as high as 5.1 W of continuous wave output power at 670 nm is achieved with 15-mm-long LBO. The optical-to-optical conversion efficiency is up to 0.31, and the fluctuation of the red output power was better than 3.0% in the given 30 min. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴ F _5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm

We have demonstrated the stable mode-locked Nd:GdVO₄ laser operating on the ⁴F_3/2-⁴I_9/2 transition at 912 nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128 mw at an incident pump power of 19.7 W.     

Laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173 nm

A laser diode pumped actively Q-switched Nd:GdVO₄ self-Raman laser operating at 1173 nm is presented. The maximum output power was 2.26 W at an incident pump power of 18 W, with the corresponding optical conversion efficiency of 12.6%. Two different resonator configurations were investigated in order to achieve high output power and efficiency.     

High power diode-pumped passively Q-switched and mode-locking Nd:GdVO4 laser at 912 nm

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.     

Efficient 1047 nm CW laser emission of Nd:YLF under direct pumping into the emitting level

We demonstrate a 1047 nm Nd:LiYF₄ (Nd:YLF) laser by directly pumping into the upper lasing level with a tunable Ti:Sapphire laser. The results obtained for direct upper laser level pumping at 863, 872 and 880 nm of Nd:YLF were compared with traditional 806 nm pump band excitation. Highly efficient 1047 nm continuous-wave (CW) laser emission under direct pumping at 880 nm in an 8 mm thick, 1.0 at.% Nd:YLF crystal is obtained. The slope efficiency is improved from 55.6% for traditional pumping at 806 nm to 76.3% for direct pumping at 880 nm.     

Theoretical and experimental investigations of a diode-pumped high-power continuous-wave 912 nm Nd:GdVO4 laser operation at room temperature

Based on the rate equation of Nd³⁺-doped quasi-three-level lasers, a theoretical model of diode-end-pumped continuous-wave 912 nm Nd:GdVO₄ laser is presented. Lasing threshold and slope efficiency considering reabsorption effect are calculated and analyzed. It is found that the output performance of 912 nm laser operating at room temperature is influenced remarkably by the reabsorption loss and spatial distribution of the pump beam and laser beam. In experiments, the output power and average slope efficiency of 912 nm laser were investigated under different conditions. After optimization at the parameters of laser medium, working temperature and spatial distribution of the pump beam, up to 16.2 W continuous-wave 912 nm laser output was obtained at incident pump power of 67.0 W, with an average slope efficiency of 41.7%, to the best of our knowledge, this is the highest output power of diode-pumped 912 nm Nd:GdVO₄ laser by far.     

Diode-pumped Nd:YVO4-Nd:CNGG crystals blue laser at 462 nm by intracavity sum-frequency-mixing

We report a laser architecture to obtain continuous-wave (cw) blue radiation at 462 nm. A 808 nm diode-pumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:CNGG crystal emitting at 935 nm. Intracavity sum-frequency mixing at 914 and 935 nm was then realized in a LiB₃O₅ (LBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 892 mW at 462 nm with a pump laser diode emitting 18.4 W at 808 nm.     

456-nm deep-blue laser generation by intracavity frequency doubling of Nd:GdVO4 under 879-nm diode pumping

We report on a simple, compact continuous-wave 456-nm laser by intracavity frequency doubling of an end-pumped Nd:GdVO₄ laser on the ⁴ F _3/2 → ⁴ I _9/2 transition. A 5-mm-long, 0.2-at % Nd:GdVO₄ bulk crystal is employed as the gain medium and the Nd³⁺ ion is directly pumped into the emitting level (⁴ F _3/2) by a novel 879-nm laser diode. Intracavity frequency doubling with a 15-mm-long LBO crystal and a 10-mm-long BiBO crystal in a linear cavity yield 56- and 118-mW single-ended blue outputs at the absorbed pump power of 11.9 W, respectively. The corresponding values are scaled to 286 and 391 mW, respectively, in a V-type cavity, with optical conversion efficiencies of 2.4 and 3.3% versus the absorbed pump power. The fluctuations of the 456-nm output power for both cases are less than 3% at the maximum output level.