硅中金受主能级在单轴应力下瞬态电容的研究

用恒定温度下瞬态电容法研究了硅中金受主能级在沿〈100〉,〈110〉,〈111〉晶向单轴应力作用下的能级移动。考虑到硅的导带在单轴应力下的分裂,导出了单轴应力下深中心中电子发射率的公式。根据该式和发射率的实验数据以及切变畸变势常数Ξ_u,求出了金受主能级激活能随应力的改变。在实验应力范围内(0—9kbar),激活能与应力成线性关系。当应力平行于〈110〉〈111〉晶向时,激活能随应力改变的斜率分别为α_<110>=-3.2±0.6meV/kbar,α_<111>=-0.3±0.6meV/kbar;当应力平行于〈100〉晶向,若取Ξ_u=9.2eV,α_<100>=-5.8±0.8meV/kbar,若取Ξ_u=11.4eV,α_<100>=-5.3±0.8meV/kbar,α表现出强烈的各向异性。进一步确定了金受主能级相对于零压力下导带底的绝对移动的压力系数。若取Ξ_u=9.2eV,这些系数分别为S_<100>=-1.3±0.8meV/kbar,S_<110>=0.7±0.6meV/kbar,S_<111>=-0.7±0.6meV/kbar。如取Ξ=11.4eV,则S_<100>=-3.5±0.8meV/kbar,S_<110>=0.0±0.6meV/kbar,S_<111>=-1.0±0.6meV/kbar。同一组的三个绝对移动值之间的偏离都超过了实验误差这一事实,说明了金中心具有立方对称性,同时中性金与带负电的金的基态都是非简并的可能性很小。 关键词：     

Dependence of high electric-field-induced strain on the composition and orientation of Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals

Electric-field-induced strain behavior of (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMNT) crystals with different orientations and compositions was investigated for use as electromechanical actuators. Crystallographically, high strains with low hysteresis were achieved for 〈001〉 oriented rhombohedral crystals (29%≤x≤31%) near a morphotropic phase boundary, rather than 〈110〉 and 〈111〉. Domain instability could explain inferior strain levels and large hysteresis for 〈110〉 and 〈111〉 oriented crystals. Ultrahigh strain levels up to 1.8% could be achieved for 〈001〉 oriented PMNT crystals, being related to an E-field induced phase transition. −2 kV/cm negative E-field can be applied to PMNT ferroelectric material with low hysteresis. High strain with low hysteresis makes PMNT crystals promising candidates for high performance solid-state actuators.     

Dependence of the fundamental absorption edge of CdInGaS4 on hydrostatic pressure

The optical absorption of CdInGaS₄ single crystals has been measured over a hydrostatic pressure range up to 40 kbar in the 2.0–3.0 eV photon energy range at room temperature. The interband gap for the indirect allowed transition was found to have a pressure coefficient, dEg/dP, of +6.4 × 10^-6ev/bar.     

Dynamics of interaction of H2 and D2 with Ni(110) and Ni(110) surfaces

Elastic and direct-inelastic scattering as well as dissociative adsorption and associative desorption of H₂ and D₂ on Ni(110) and Ni(111) surfaces were studied by molecular beam techniques. Inelastic scattering at the molecular potential is dominated by phonon interactions. With Ni(110), dissociative adsorption occurs with nearly unity sticking probability s₀, irrespective of surface temperature T_s and mean kinetic energy normal to the surface 〈 E_⊥ 〉. The desorbing molecules exhibit a cos θ_e angular distribution indicating full thermal accommodation of their translation energy. With Ni(111), on the other hand, s₀ is only about 0.05 if both the gas and the surface are at room temperature. s₀ is again independent of T_s, but increases continuously with 〈 E⊥ 〉 up to a value of ～0.4 for 〈 E⊥ 〉 = 0.12 eV. The cos⁵θ_e angular distribution of desorbing molecules indicates that in this case they carry off excess translational energy. The results are qualitatively rationalized in terms of a two-dimensional potential diagram with an activation barrier in the entrance channel. While the height of this barrier seems to be negligible for Ni(110), it is about 0.1 eV for Ni(111) and can be overcome through high enough translational energy by direct collision. The results show no evidence for intermediate trapping in a molecular “precursor” state on the clean surfaces, but this effect may play a role at finite coverages.     

Orientation effects in interaction of screw dislocation with interstitial impurity atom in b.c.c. lattice

The cross-slip and pinning of a 1/2a〈111〉 screw dislocation in b.c.c. metals in the vicinity of an interstitial impurity atom are studied in dependence on crystal orientation. To this purpose, the interaction energy between the dislocation and an interstitial atom is calculated in an anisotropic elastic continuum and it is assumed that the screw dislocation moves microscopically on {112} or {110} planes between its stable configuration positions in b.c.c. lattice. It is found that the probability of induced cross-slip is orientation dependent. This result is used for discussion of orientation dependence of the change of CRSS due to increased carbon content which was experimentally determined for Fe-3.2% Si alloy single crystals in a previous paper (Blahovec J., Kade?ková S.: Czech. J. Phys.B 21 (1971), 846).     

Dielectric properties of (NH4)2SO4 crystals in the range of electronic excitations

Spectra of the real and imaginary parts of the pseudo‐dielectric permittivity, 〈?₁〉(E) and 〈?₂〉(E), of ferroelectric ammonium sulfate crystals, (NH₄)₂SO₄, have been measured in the range of electronic excitations 4.0 to 9.5 eV by ellipsometry using synchrotron radiation. Temperature dependences of the corresponding susceptibilities, 〈χ₁〉(T) and 〈χ₂〉(T), obtained for the photon energy E = 8.5 eV, related to excitations of oxygen p‐electrons, reveal sharp peak‐like temperature changes near the Curie point T_C = 223 K. The large temperature‐dependent increase of the imaginary part of the susceptibility χ₂(T), together with a simultaneous decrease of the real part of the susceptibility χ₁(T), take place at the phase transition. These anomalies have been ascribed mainly to the SO₄ group of the crystal structure.     

Electrical properties of narrow gap semiconductor PtSb2

Results of measurements of conductivity, Hall and Seebeck coefficients of tellurium doped n-type crystals of platinum antimonide are presented. The Hall coefficient and the Seebeck coefficient undergo sign inversion twice, below and above room temperature. The detailed analysis of the experimental results revealed that below 200 K PtSb₂ can be described by a simple conduction and valence band model. The energy gap E_g = (110?0.15 × T) (meV), the electron conductivity mass m_n^c/m₀ = 0.35, acoustic phonon limited electron mobility 〈μ_a〉_n = 3 × 10⁶ T^{?$\text{3}\text{2}$} ($\text{cm}{}^2\text{V · s}$) and mobility ratio 〈μ_a〉_n/〈μ_a〉_p = 0.4 are determined. However, at higher temperatures a more complicated valence band model is needed to account for the experimental results. The arguments for the existence of subsidiary valleys in the valence band are presented.     

First direct observation of strong interaction spin-orbit effects in antiprotonic atoms

The strong ¯p-nucleus spin-orbit interaction was investigated in a measurement of the strong-interaction effects of the 9→8 transition in ¯p ¹⁷⁴Yb at the Low-Energy Antiproton Ring (LEAR) at CERN. This measurement was part of an experimental programme where, for the first time, the fine-structure components of the last observable X-ray transition in a ¯p atom, which carries information on the strong ¯p-nucleus interaction, were resolved and studied individually. The observed splitting ΔE _exp=2408±26 eV consists of the electromagnetic fine-structure splitting ΔE _FS=2350 eV and an additional splitting Δ?=58±26 eV. In addition, one finds a significant difference in the level widths of Δ=195±59 eV with the larger value_?=1216±41 eV for the lower fine-structure level. This experiment follows an earlier measurement on ¯p ¹³⁸Ba, where the transition 8→7 is influenced by the strong interaction. In this case, however, the fine-structure components could not be resolved. The results for¹⁷⁴Yb may be attributed to a spin-orbit (LS) term in the complex strong-interaction potential.     

Effect of cobalt impurities on the electrical and photoelectrical properties of GaS single crystals

Static dark current-voltage characteristics (CVC's), the temperature dependence of electric conductivity [σ(T)], the currents of thermostimulated depolarization (TSD), the spectral distribution of photoconductivity (SDPC) and photoluminescence (PL) have been studied in GaS 〈0.1 at % Co〉 single crystals.The results of complex investigations of CVC's, σ(T) dependences, TSD, the SDPC and PL show that the forbidden gap of GaS 〈0.1 at % Co〉 single crystals exhibits acceptor levels (E_V + 0.26 and E_V + 0.63 eV).     

Phases of silicon at high pressure

X-ray diffraction studies are reported on silicon at pressures up to 250 kbar (25 GPa). A transition to the β-Sn structure (II) initiates at 112 ± 2 kbar and two phases (I + II) coexist to 125 ± 2 kbar. At 132 ± 2 kbar a new phase (V) initiates, and the transition is complete at 164 ± 5 kbar. This phase persists to 250 kbar. Its structure is tentatively assigned as primitive hexagonal with c/a = 0.941 ± 0.002 at 250 kbar. On release of pressure, the sequence is V → (V + II) (145 - 110 kbar) → II → (II + III) (108 - 85 kbar) → III, the last phase persisting to room pressure.     

Electroreflectance in GeSi alloys under hydrostatic pressure

From the electroreflectance spectra measured under hydrostatic pressure to 7 kbar we have determined the pressure coefficients for germanium (dE₁/dP = 7.8 ± 0.4⁻⁶eV/bar, dP = 1.4 ± 0.8 10⁻⁶eV/bar), for Si (dE′_o/dP = 1 ± 1 10⁻⁶eV/bar, dE₁dP = 6.2 ± 0.4 10⁻⁶eV/bar) and for GeSi alloys in the entire composition region. For the composition 80–100% of Si which is widely discussed in the literature, we could distinguish two maxima with substantially different pressure coefficients. The absolute experimental values of dE/dP agree rather well with theoretical values which, together with composition shift of electroreflectance peaks, enable us to connect the peak E₁ predominantly with λ and L and E′_o with Г and Δ transitions in the entire composition region.     

Energy expression of the chemical bond between atoms in metal oxides

The chemical bond between atoms in metal oxides is expressed in an energy scale. Total energy is partitioned into the atomic energy densities of constituent elements in the metal oxide, using energy density analysis. The atomization energies, ΔE_M for metal atom and ΔE_O for O atom, are then evaluated by subtracting the atomic energy densities from the energy of the isolated neutral atom, M and O, respectively. In this study, a ΔE_O vs. ΔE_M diagram called atomization energy diagram is first proposed and used for the understanding of the nature of chemical bond in various metal oxides. Both ΔE_M and ΔE_O values reflect the average structure as well as the local structure. For example their values vary depending on the vertex, edge or face sharing of MO₆ octahedron, and also change with the overall density of binary metal oxides. For perovskite-type oxides it is shown that the ΔE_O value tends to increase by the phase transition from cubic to tetragonal phase, regardless of the tilting-type or the 〈1 0 0〉 displacement-type transition. The bond formation in spinel-type oxides is also understood with the aid of the atomization energies. The present approach based on the atomization energy concept will provide us a new clue to the design of metal oxides.     

Multiplicity of charged particles in electron-induced showers developing in oriented silicon and tungsten crystals

A more than twofold increase in the average multiplicity of charged particles in electromagnetic showers initiated by electrons with an energy of 26 GeV in tungsten crystals 2.7, 5.8, and 8.4 mm thick, oriented along the 〈111〉 axis, in comparison with misoriented crystals is shown. For a silicon crystal 20 mm thick, oriented along the 〈110〉 axis, at an electron energy of 28 GeV, the average multiplicity of charged particles increases by a factor of ～1.6. The widths of the orientation dependences of the average multiplicity of charged particles in electron-induced showers in silicon and tungsten crystals are proportional to the crystal thickness and depend on the electron energy as E ^?1/2.     

Si(001)邻面上与台阶有关的电子态

我们用角分辨光电子谱(ARUPS)研究了Si(001)邻面上与台阶有关的电子态。在对称点Γ(K₁₁=0),发现此态的能级在E_F以下0.5—0.6eV处。同时还测得该态的色散(<0.3eV)比正常的Si(001)表面态的色散(0.6—0.7eV)来得小。 关键词：     

New bounds for dilepton production from heavy neutral leptons

Bounds on 〈E_?ⁿ〉/〈E₊ⁿ〈, 〉E₊E_?〈/〉E₂²〈 and 〈E₊E_?〉/〈E₊〉〈E_?〉 are direved for the processes ν_μN → μ^?μ⁺(e⁺) + X and μN → μ^?μ⁺ + X if dileptons are mediated by a $\text{spin}\text{-}\text{1}\text{2}$ heavy neutral lepton L₀. The bounds are shown to be independent of the production mechanism and mass of L₀. Useful conditional bounds are obtained relating the bounded quantities, which give information about the structure of the weak current responsible for L₀ decay.     

Effect of chemical ordering on the crystallization behavior of Se90Te10−xSnx (x=2, 4, 6, and 8) chalcogenide glasses

Ternary Se₉₀Te_10−xSn_x (x=2, 4, 6, and 8) chalcogenide glassy alloys have been prepared by melt quenching technique. Various crystallization parameters, such as onset (T_c) and peak (T_p) crystallization temperatures, activation energy of crystallization (E_c) and Avrami exponent (n) have been determined for these alloys. T_c and T_p have been determined directly from the non-isothermal differential scanning calorimeter (DSC) thermograms. The value of E_c has been calculated from the variation of both T_c and T_p with the heating rate (β) according to Kissinger, Takhor, Augis–Bennett and Ozawa models while Augis–Bennett method has been used to deduce the value of n for the studied samples. The obtained values of the crystallization parameters have been correlated with the character and the energy of the chemical bonds through the calculation of the heteronuclear bond energies of the constituent atoms using Pauling principle. In addition to that, Tichy–Ticha model was used to estimate the mean bond energy of the average cross-linking per atom 〈E_cl〉, the average bond energy per atom of the remaining matrix 〈E_rm〉, and the overall mean bond energy 〈E〉 of the studied glasses. Results reveal that both of T_c and T_p decreases with increases Sn content. This is may be attributed to the decreasing in the overall mean bond energy 〈E〉. Besides, the plot of E_c (and also T_g) against 〈E〉 was found to be non linear, which contradicts the well known linear correlation between E_c and T_g with 〈E〉 as suggested by Tichy–Ticha model. This discrepancy may be due to the fact that the Tichy–Ticha linear correlation model was based on the assumption of covalent glassy network, while in the present glassy alloys, Se–Te binary doped with heavy elements such as Sn exhibit iono-covalent bonding. The calculated values of the ionicity are in support of this argument.     

Correlation between band structure and hydride formation in dilute palladium alloys

Data on the free energy change ΔG, following solution of hydrogen in dilute Pd-alloys Pd_1?xM_x have been reviewed for different concentrations of M (M = Au, Ag, Pt, Ir, Rh, V, Cu, Ni, Pb, Sn and Ti) in both the α and β phases. The dependence of ΔG values upon the nature of the substituents (transition metals) is consistently explained within the framework of a metal-hydrogen bonding mechanism in the hydrides. For the β-hydride the ΔG values can be calculated on the basis of the equation ΔG = ΔG_pd + a(T)(〈?^M_LB〉 ? 〈?^Pd_LB〉)x, where $\text{ΔG}{}_{\mathrm{<mtext>Pd</mtext>}}\text{= ? 0.0489}\text{eV}\text{H}$ atom and is the free energy change of solution of hydrogen in pure Pd, a(T) = 0.194 at T = 298 K, 〈?^m_LB〉 and 〈?^pd_LB〉 are the average energies of the lowest band of the pure constituents ($\text{〈?}{}^{\mathrm{<mtext>Pd</mtext>}}{}_{\mathrm{<mtext>LB</mtext>}}\text{〉 = ?9.15}\text{eV}\text{atom}$). The stability of the palladium-hydrogen bond in dilute Pd-alloys depends on the value of 〈?^M_LB〉; for substituents having lower 〈?^M_LB〉 values than Pd the bond will strengthen, while for those having higher 〈?^M_LB〉 values it will weaken. This behaviour agrees well with the general trend of the stability of the stoichiometric hydrides predicted by Gelatt, Ehrenreich and Weiss using band structure results.     

Effect of isotropic stress on dislocation bias factor in bcc iron: an atomistic study

The effect of externally applied stress on the dislocation bias factor (BF) in bcc iron has been studied using a combination of atomistic static calculations and finite element integration. Three kinds of dislocations were considered, namely, a₀/2〈1 1 1〉{1 1 0} screw, a₀/2〈1 1 1〉{1 1 0} edge and a₀〈1 0 0〉{0 0 1} edge dislocations. The computations reveal that the isotropic crystal expansion leads to an increasing or constant dislocation bias, depending on the Burgers vector and type of dislocation. On the other hand, compressive stress reduces the dislocation bias for all the dislocations studied. Variation of the dislocation BF depending on dislocation type and Burgers vector is discussed by analysing the modification of the interaction energy landscape and the capture efficiency values for the vacancy and self-interstitial atom.     

Study of the component distribution in Si/GexSi1−x /Si heterostructures grown by molecular beam epitaxy

This paper reports on a study of the depth profile of components in GeSi heterostructures grown on low-temperature silicon (LTSi: T _gr ～ 350–400° C) and porous silicon by molecular-beam epitaxy. An excess Ge concentration was found by Auger electron spectroscopy depth profiling at the Ge_xSi_1?x /LTSi interface, which decreased in all samples subjected to annealing. The Ge diffusion activation energy was calculated to be E _a ≈ 1.6 eV in this case. An enhanced Ge concentration was also detected by x-ray photoelectron spectroscopy at the Si cap surface. Possible reasons for the surface enrichment of the silicon layer and of the Ge_xSi_1?x film interface by germanium are considered, and the relation between the component distribution and the structural features of plastically strain-relieved layers are discussed.     

The excitonic absorption spectrum of thin Ag2ZnI4 films

The electron absorption spectrum of thin films of the Ag₂ZnI₄ complex compound is studied at photon energies of 3–6 eV. It is established that the interband absorption edge corresponds to an allowed direct transitions across the energy gap E _g=3.7 eV. A strong exciton band is adjacent to the absorption edge at E _ex=3.625 eV (80 K); in the 80–390 K range, the temperature behavior of the half-width Γ of this band is determined by the exciton-phonon interaction typical of quasi-one-dimensional excitons. At T≤390 K, a discontinuity in the slope of the E _ex(T) and Γ(T) dependences is observed. This discontinuity is associated with the generation of Frenkel defects and is accompanied by the transfer of Ag ions to the interstitial sites and vacancies of the crystal lattice of the compound.