Fabrication and characterization of ZnO and ZnMgO nanostructures grown using a ZnO/ZnMgO compound as the source material

ZnO and ZnMgO nanostructures were synthesized on Si (1 0 0) substrates with the assistance of a gold catalyst, using a thermal evaporation method with a ZnO/ZnMgO compound as the source material. The substrates were placed in different temperature zones. ZnO nanostructures with different morphologies and different compounds were obtained at different substrate temperatures. Nanostructures with nanorods and nanosheets morphologies formed in the low and high temperature zones, respectively. The nanorods grown in the low temperature zone had two phases, hexagonal and cubic. Energy dispersive X-ray (EDX) results showed that the nanorods with a cubic shape contained more Mg in comparison to the nanowires with a hexagonal shape. We found that the substrate temperature and the gold catalyst were two key factors for the doping of Mg and the formation of nanostructures with different morphologies. Room temperature photoluminescence spectroscopy showed a blue-shift for the nanostructures with the nanorods morphology. This shift could be attributed to Mg effects that were detected in the nanorods.     

Structure and electrical conduction of WO3 nanorods epitaxially grown on mica

Tunsten oxide nanorods are grown on mica substrate in air from WO₃ vapor at 590 °C. They are epitaxially oriented on the substrate in three directions according to the hexagonal symmetry of the mica. Their morphology was investigated by Atomic Force Microscopy (AFM), their structure by Electron Diffraction (ED) and High Resolution Electron Microscopy (HRTEM). The energy dispersive X-ray analysis (EDX) associated with the TEM revealed the presence of potassium in the first step of the nanostructures growth suggesting the formation of a tungsten bronze. According to their thickness the nanorods have a structure either hexagonal or monoclinic. The structural investigations showed that numerous kinds of planar defects parallel to the growth direction are formed. The electrical conduction was analyzed with a Conductive Atomic Force Microscopy (CAFM) method which allows to obtain either an image of the resistance variations along the nanorods or a current-voltage response. The result demonstrates that the WO₃ nanorods form electrically networks suitable for gas sensing experiments.     

Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate

Aligned straight silica nanowires (NWs) have been synthesized on Si wafer by thermal evaporation of mixed powders of zinc carbonate hydroxide and graphite at 1100 °C and condensation on Si substrate without using any catalyst. The straight silica NWs have diameters ranging from 50 to 100 nm, and lengths of several micrometers, with cone-shaped tips at their ends. High deposition temperature and relatively high SiO_x vapor concentration near the growth substrate would be beneficial to the formation of the aligned straight silica NWs. Different morphologies of silica nanostructures have also been obtained by varying the deposition temperature and the vapor concentration of the SiO_x molecules. Room temperature photoluminescence measurements on the oriented silica NWs show that two green emission bands at 510 and 560 nm, respectively, revealing that the aligned straight silica NWs might have potential applications in the future optoelectronic devices.     

Morphology and photoluminescence properties of zinc oxide films grown by pulsed laser deposition

Zinc oxide films with different morphologies have been grown by pulsed laser deposition, varying substrate temperature and oxygen pressure. At low oxygen pressure and low substrate temperature continuous films with different roughness have been obtained, while at high substrate temperature a film with sparse hexagonal pyramids has been observed. Increasing the oxygen pressure the film became rougher and at 100 Pa a rod-array has been deposited. The columns of this rod-array grew along the wurtzite c-axis perpendicularly to the substrate surface as proved by X-ray diffraction measurements. Near to the sample borders the columns were slightly tilted towards the center of the sample. The possible growth mechanisms giving rise to the different morphologies have been discussed. Low-temperature photoluminescence measurements allowed to get information about the film quality, showing the variations of the excitonic peak and two defect bands (green and violet-blue) with the different deposition parameters.     

衬底位置对化学气相沉积法制备的磷掺杂p型ZnO纳米材料形貌和特性的影响

采用化学气相沉积方法,在无催化剂的条件下,通过改变衬底位置在Si(100)衬底上制备出了高取向的磷掺杂ZnO纳米线和纳米钉.测试结果表明,当衬底位于反应源上方1.5 cm处时,所制备的样品为钉状结构,而当衬底位于反应源下方1 cm处时样品为线状结构.对不同形貌磷掺杂ZnO纳米结构的生长机理进行了研究.此外,在ZnO纳米结构的低温光致发光谱中观测到了一系列与磷掺杂相关的受主发光峰.还对磷掺杂ZnO纳米结构/n-Si异质结I-V曲线进行了测试,结果表明,该器件具有良好的整流特性,纳米线和纳米钉异质结器件的开启电压分别为4.8和3.2 V.     

Silicon-riched-oxide cluster assembled nanostructures formed by low energy cluster beam deposition

Free beam of silicon oxide nanoclusters is produced by a gas aggregation source from SiO precursor. Due to the disproportionation reaction during the condensation of SiO vapor the generated clusters are Si-riched. The clusters are collimated to be a fine beam and deposited on the substrate at room temperature. The microstructures of the cluster-based nanofilm are characterized by TEM. It is shown that with appropriate impacting parameters, Si-riched oxide nanofilms assembled from uniformly distributed isolated clusters can be obtained. And the clusters can self-organize into partially densely ordered packing within local domains. XPS spectra are taken to analyze the chemical components of the nanofilms. Photoluminescence from the Si-riched oxide nanofilms has also been observed.     

Chemically induced morphology change in cluster-based nanostructures

Preformed clusters carrying surfactant are used as primary blocks for the building of nano structures. Self assembly of silver atom based clusters, soft landed on a HOPG surface, generates a large variety of new architectures depending on the nature and on the concentration of the impurities. Fractal shapes fragmented into multiple compact like islands, and chain like structures might be formed. A strong local enhancement of the silver atom mobility at the surface of islands is responsible for those morphology changes.     

Low-temperature synthesis of ZnO nanonails

Wurtzite ZnO nanonails on silicon substrate were successfully synthesized by thermal vapor transport and condensation method at a low temperature without a metal catalyst. Pure Zn powders were used as raw material and O₂/Ar powders as source gas. The products were characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. The results show that the deposited nanostructures include aligned ZnO nanonails. The ZnO nanonails, with crystalline cap and small-diameter shafts, grow along the c-axis. The optical properties have been revealed by photoluminescence spectra. We considered that the ZnO nanonails growth is a vapor-solid process.     

Effects of deposition temperature and thickness on the structural properties of thermal evaporated bismuth thin films

Bismuth (Bi) thin films of different thicknesses were deposited onto Si(1 0 0) substrate at various substrate temperatures by thermal evaporation technique. Influences of thickness and deposition temperature on the film morphologies, microstructure, and topographies were investigated. A columnar growth of hexahedron-like grains with bimodal particle size distribution was observed at high deposition temperature. The columnar growth and the presence of large grains induce the Bi films to have large surface roughness as evidenced by atomic force microscopy (AFM). The dependence of the crystalline orientation on the substrate temperature was analyzed by X-ray diffraction (XRD), which shows that the Bi films have completely randomly oriented polycrystalline structure with a rhombohedral phase at high deposition temperature (200 °C) and were strongly textured with preferred orientation at low deposition temperatures (30 and 100 °C).     

缓冲层对InSb/GaAs薄膜质量的影响

InSb是制作3~5μm红外探测器的重要材料。在GaAs衬底上外延生长InSb,存在的主要问题在于两种材料间14.6%的晶格失配度,会引入较大的表面粗糙度以及位错密度,使外延材料的结构和电学性能均会受到不同程度的影响。通过系列实验,研究了在生长过程中缓冲层对薄膜质量的影响。利用高能电子衍射仪(RHHEED)得到了合适的生长速率和Ⅴ/Ⅲ比,研究了异质外延InSb薄膜生长中低温InSb缓冲层对材料生长质量以及不同外延厚度对材料电学性质的影响。采用原子力显微镜(AFM)、透射电子显微镜(TEM)、X射线双晶衍射(DCXRD)等方法研究了InSb/GaAs薄膜的表面形貌、界面特性以及结晶质量。通过生长合适厚度的缓冲层,获得了室温下DCXRD半高峰宽为172″,77 K下迁移率为64300 cm²·V^-1·s^-1的InSb外延层。     

Nanostructure evolution during thin film deposition

It is shown how that the combination of atomic deposition and nonlinear diffusion may lead, below a critical temperature, to the growth of nonuniform layers on a substrate. The dynamics of such a system is of the Cahn–Hilliard type, supplemented by reaction terms representing adsorption–desorption processes. The instability of growing uniform layers leads to the formation of nanostructures which correspond to regular spatial variations of substrate coverage. Patterns wavelengths and symmetries are selected by the dynamics and not by variational arguments. For temperatures below critical, one should observe hexagonal arrays of high coverage dots on the surface of otherwise uniform growing layers. On decreasing further the temperature, these structures should transform into hexagonal arrays of low coverage domains, within the growing layer.     

Complex nanostructured materials from segmented copolymers prepared by ATRP

The development of new controlled/living radical polymerization processes, such as Atom Transfer Radical Polymerization (ATRP) and other techniques such as nitroxide mediated polymerization and degenerative transfer processes, including RAFT, opened the way to the use of radical polymerization for the synthesis of well-defined, complex functional nanostructures. The development of such nanostructures is primarily dependent on self-assembly of well-defined segmented copolymers. This article describes the fundamentals of ATRP, relevant to the synthesis of such systems. The self-assembly of block copolymers prepared by ATRP is illustrated by three examples. In the first, block copolymers of poly(butyl acrylate) with polyacrylonitrile phase separate, leading to spherical, cylindrical or lamellar morphologies, depending on the block copolymer composition. At a higher temperature, polyacrylonitrile block converts to nanostructured carbon clusters, whereas poly(butyl acrylate) block serves as a sacrificial block, aiding the development of designed nanostructures. In the second example, conductive nanoribbons of poly(n-hexylthiophene) surrounded by a matrix of organic polymers are formed from block copolymers prepared by ATRP. The third example describes an inorganic-organic hybrid system consisting of hard nanocolloidal silica particles (20 nm) grafted by ATRP with well-defined polystyrene-poly(benzyl acrylate) block copolymer chains (1000 chains per particle). Silica cores in this system are surrounded by a rigid polystyrene inner shell and softer polyacrylate outer shell. Received 9 July 2002 Published online: 11 March 2003     

TEM study of annealed Pt nanostructures grown by electron beam-induced deposition

In this paper we report on the microstructural characterization of Pt nanostructures fabricated by electron beam-induced deposition in a dual beam system and subsequently annealed in furnace. The as-deposited nanostructures are made of a mixture of nanocrystalline Pt and amorphous carbon. We show by transmission electron microscopy and electron energy loss spectroscopy that the annealing in presence of oxygen at 550 °C for 30 min is able to remove the amorphous carbon from the nanostructure, leaving polycrystalline Pt grains.     

Fine structure effects and phase transition of Xe nanocrystals in Si

We report on an X-ray diffraction study performed on Xe agglomerates obtained by ion implantation in a Si matrix. At low temperature, Xe nano-crystals were formed in Si with different average sizes according to the preparation procedure. High resolution diffraction spectra were detected as a function of the temperature, in the range 15–300 K, showing evidence of fine structure effects in the growth mode of the Xe nanocrystals. We report the first experimental observation of fcc crystalline agglomerates with a lattice parameter expanded by the epitaxial condensation on the Si cavities, whereas for small agglomerates randomly oriented evidence of a contracted lattice was found. For these nanocrystals, a solid-to-liquid transition temperature, size dependent, was detected; above the transition temperature, a fluid phase was observed. Neither overpressurized clusters were detected at any temperature, nor preferential binary size distribution as reported for a metal matrix.     

Growth of Cu Films on Si(111)-7×7 Surfaces at Low Temperature: A Scanning Tunnelling Microscopy Study

Morphologies of Cu(111) films on Si(111)-7×7 surfaces prepared at lowtemperature are investigated by scanning tunnelling microscopy (STM) andreflection high-energy electron diffraction (RHEED). At the initial growth stage, Cu films are flat due to the formation of silicide at the interface that decreases the mismatch between Cu films and the Si substrate. Different from the usual multilayer growth of Cu/Cu(111), on the silicide layer a layer-by-layer growth is observed. The two dimensional (2D) growth is explained by the enhanced high island density at low deposition temperature. Increasing deposition rateproduces films with different morphologies, which is the result of Ostwald ripening.     

化学气相沉积法中SnO2一维纳米结构的控制生长

以Sn和SnO为源材料，化学气相沉积法中通过控制反应物配比及载气中的氧含量等宏观实验条件，实现了SnO₂一维纳米结构的控制生长，成功获得各种不同横向尺度的SnO₂纳米线、纳米带以及直径连续变化的针状纳米结构. 通过扫描电子显微镜、X射线衍射仪对不同实验条件下所制备的样品进行形貌和晶格结构表征，认为高温生长点附近锡与氧的相对含量是控制SnO₂一维纳米结构生长的关键因素；并在此基础上对SnO₂一维纳米结构的生长机理进行了深入的讨论.     

Substrate effects on ZnO nanostructure growth via nanoparticle-assisted pulsed-laser deposition

The effects of various substrate conditions on the morphology, crystal structure and photoluminescence of ZnO nanostructures synthesized by nanoparticle-assisted pulsed-laser ablation deposition were investigated. It is concluded that the sapphire substrate with a 1 h anneal at 1000 °C is the most favorable to the vertical growth of ZnO nanostructures. SEM analysis indicates that the well-aligned diameter-modulated ZnO nanonails with unique shape were successfully synthesized on the annealed sapphire substrate. The as-synthesized ZnO nanostructures exhibit an ultraviolet emission at around 390 nm and the absent green emission under room temperature, indicating that there is a very low concentration of deep-level defects inside ZnO lattices. The novel ZnO nanostructures could offer novel opportunities for both fundamental research and technological applications.     

基底显微结构对薄膜生长影响的Monte Carlo模拟研究

利用Monte Carlo方法研究了基底显微结构对薄膜生长的影响. 对不同显微结构基底上薄膜生长的初始阶段岛的形貌和尺寸与薄膜覆盖度和入射粒子沉积速率之间的关系进行了模拟和分析. 模型中考虑了粒子沉积、吸附粒子扩散和蒸发等过程. 结果表明,基底显微结构对薄膜生长具有明显影响. 当沉积温度为300K、沉积速率为0.005ML/s（Monolayer/second,简称ML/s）、覆盖度为0.05ML时,四方基底上薄膜生长呈现凝聚生长. 随着覆盖度增加,岛的尺寸变大,岛的数目减少. 而对于六方基底,当覆盖度从0.05ML变化到0.25ML时,薄膜生长经历了一个从分散生长过渡到分形生长的过程. 无论是四方还是六方基底,随着沉积速率的增加,岛的形貌由少数聚集型岛核分布状态向众多各自独立的离散型岛核分布状态过渡.     

Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD)

The effect of substrate temperature on the structural property of the silicon nanostructures deposited on gold-coated crystal silicon substrate by hot-wire chemical vapor deposition (HWCVD) was studied. The uniformity and size of the as-grown silicon nanostructures is highly influenced by the substrate temperature. XRD, Raman and HRTEM measurements show the silicon nanostructures consist of small crystallites embedded within amorphous matrix. The crystallite size of the as-grown silicon nanostructures decreases with increases in substrate temperature. FTIR shows that these silicon nanostructures are highly disordered for sample prepared at substrate temperature above 250 °C. The correlation of crystallinity and structure disorder of the silicon nanostructures growth at different substrate temperature was discussed.     

Zinc oxide nanostructures grown by pulsed laser deposition

We report the use of PLD to grow different ZnO nanostructures. Very different film morphologies have been observed using different laser wavelengths to ablate the target. The influence of substrate temperature and oxygen background pressure on the film morphology has been investigated too. Smooth and rough films, hexagonal pyramids and columns have been obtained by using a KrF excimer laser (248 nm) for the target ablation, while hexagonal hierarchical structures and pencils have been obtained by using ArF (193 nm). Photoluminescence and X-ray diffraction measurements revealed the good quality of the samples, in particular of those deposited using the ArF laser beam.