Cu adsorption on Pt(111) and its effects on Chemisorption: A comparison with electrochemistry

The growth modes and interaction of vapor-deposited Cu on a clean Pt(111) surface have been monitored by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and work function measurements. The LEED data indicate that below 475 K Cu grows in p(1 × 1) islands in the first monolayer with the interatomic Cu spacing the same as the Pt(111) substrate. The second monolayer of Cu grows in epitaxial, rotationally commensurate Cu(111) planes with the CuCu distance the same as bulk Cu. For substrate temperatures below ～ 475 K, the variation of work function and “cross-over beam voltage” with Cu coverage show characteristic features at one monolayer that are quite useful for calibration of θ_Cu. Above 525 K, Cu-Pt alloy formation was observed in AES and LEED data. Thermal desorption spectroscopy of H₂ and CO has demonstrated that simple site blocking of the Pt(111) surface by vapor-deposited Cu occurs linearly with chemisorption being essentially eliminated at θ_Cu = 1.0–1.15. Conclusions drawn from this work correlate very favorably with the well-known effects of under potentially deposited copper on the electrochemistry of the H₂2H⁺ couple at platinum electrodes.     

Investigation of properties of Cu containing DLC films produced by PECVD process

Copper containing diamond like carbon (Cu-DLC) thin films were deposited on various substrates at a base pressure of 1×10^?3 Torr using a hybrid system involving DC-sputtering and radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) techniques. The compressive residual stresses of these films were found to be considerably lower, varying between 0.7 and 0.94 GPa and Cu incorporation in these films improve their conductivity significantly. Their structural properties were studied by Raman spectroscopy, atomic force microscopy, scanning electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction techniques that clearly revealed the presence of Cu in the DLC structure. Raman analysis yields that Cu incorporation in DLC enhances the graphite-like sp² bonding. However, the sp² bonding was found to continuously reduce with the increasing C₂H₂ gas pressure, this may be due to reduction of Cu nanocrystal at the higher pressure. FTIR results inferred various bonding states of carbon with carbon, hydrogen and oxygen. In addition, hydrogen content and sp³ and sp² fractions in different Cu-DLC films were also estimated by FTIR spectra and were correlated with stress, electrical, optical and nano-mechanical properties of Cu-DLC films. The effect of indentation load (4–10 mN) on nano-mechanical properties of these films was also explored.     

The oxidation of H2CO on a copper(110) surface

The oxidation of H₂C¹⁶O by adsorbed ¹⁸O was studied on an Cu(110) sample by temperature programmed reaction spectroscopy. Formaldehyde exchanged its oxygen with surface ¹⁸O upon adsorption to yield H₂C¹⁸O_(a) and ¹⁶O_(a). Formaldehyde was also oxidized by surface ¹⁶O and ¹⁸O atoms to H₂COO which subsequently released one of the hydrogen atoms to form HCOO. The evolution of H₂ from the Cu(110) surface was desorption limited, and the low pre-exponential factor for the recombination of the surface hydrogen atoms suggested stringent requirement on the trajectories of the colliding partners. The formate was very stable and dissociated at elevated temperatures to simultaneously yield H₂ and CO₂. The surface concentration of ¹⁸O exerted a pronounced affect on the activity of the oxidation of formaldehyde on Cu(110).     

“Long” and “short” range electronic effects in the bonding of CO and H2 on CuNi alloy

The thermal desorption data of CO from the CuNi alloys cannot be explained by a local binding site picture alone. The CO activation energy of desorption from a Ni binding site decreases linearly with increased surface Cu concentration indicating the presence of a ligand (long range electronic) effect. In contrast, the H₂ activation energy of desorption is constant with alloy composition.     

Cu/ZnO(0001̄) and ZnOx/Cu(111): Model catalysts for methanol synthesis

In an attempt to understand the relative importance of the various constituents of copper-zinc oxide catalysts for methanol synthesis (2H₂ + CO → H₃COH), we have prepared and characterized a number of single-crystal surface structures of Cu-ZnO. The model catalysts have also been tested in terms of their activity for methanol synthesis. The growth of vapor-deposited Cu overlayers on a ZnO(0001&#x0304;) (O face) single crystal has been investigated using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), He⁺ ion scattering spectroscopy (ISS) and low-energy electron diffraction (LEED). The results are consistent with a growth model in which, at room temperature, the first monolayer spreads uniformly across the surface in a p(1 × 1) structure. As more Cu is added, thick Cu(111) islands grow and these are separated by large regions of the p(1 × 1)-Cu monolayer. The Cu(111) islands are rotationally aligned with the ZnO substrate, and at high enough coverages grow together to cover the ZnO. Increasing temperature favors more agglomeration. A clean Cu(111) crystal and one containing a ZnO_x (x ⋍ 3) monolayer were also studied. None of these model catalysts gave rates of methanol production which were measurable in our present experimental limits (TOF < 2 × 10⁻³ molecules site⁻¹ s⁻¹) at 500–600 K and CO + H₂ pressures up to 1500 Torr. Under these “reaction” conditions, the Cu in direct contact with ZnO may be slightly oxidized; all the other Cu is completely metallic. The Cu does not change its character between deposition and reaction conditions, even if heavily oxidized to CuO in between. The addition of CO₂ at very high levels under reaction conditions does not change the character of a Cu(111) model catalyst surface, and no surface oxygen is ever observable after treatment under reaction conditions.     

Interaction of atomic H and CO with Cu(1 1 0) and bimetallic Ni/Cu(1 1 0)

Co-adsorption of hydrogen and CO on Cu(1 1 0) and on a bimetallic Ni/Cu(1 1 0) surface was studied by thermal desorption spectroscopy. Hydrogen was exposed in atomic form as generated in a hot tungsten tube. The Ni/Cu surface alloy was prepared by physical vapor deposition of nickel. It turned out that extended exposure of atomic hydrogen leads not only to adsorption at surface and sub-surface sites, but also to a roughening of the Cu(1 1 0) surface, which results in a decrease of the desorption temperature for surface hydrogen. Exposure of a CO saturated Cu(1 1 0) surface to atomic H leads to a removal of the more strongly bonded on-top CO (α₁ peak) only, whereas the more weakly adsorbed CO molecules in the pseudo threefold hollow sites (α₂ peak) are hardly influenced. No reaction between CO and H could be observed. The modification of the Cu(1 1 0) surface with Ni has a strong influence on CO adsorption, leading to three new, distinct desorption peaks, but has little influence on hydrogen desorption. Co-adsorption of H and CO on the Ni/Cu(1 1 0) bimetallic surface leads to desorption of CO and H₂ in the same temperature regime, but again no reaction between the two species is observed.     

Lateral interactions in the thermal desorption of H2 from clean Cu/Ni(110) alloy surfaces

The adsorption of hydrogen on a clean Cu10%/Ni90% (110) alloy single crystal was studied using flash desorption spectroscopy (FDS), Auger electron spectroscopy (AES), and work function measurements. Surface compositions were varied from 100% Ni to 35% Ni. The hydrogen chemisorption on a-surface of 100% nickel revealed strong attractive interactions between the hydrogen atoms in accordance with previous work on Ni(100). Three desorption states (β₁, β₂ and α) appeared in the desorption spectra. The highest temperature (α) state was occupied only after the initial population of the β₂-state. As the amount of copper was increased in the nickel substrate, desorption from the higher energy binding α-state was reduced, indicating a decrease in the attractive interactions among hydrogen atoms. The hydrogen coverage at saturation was not affected by the addition of copper to the nickel substrate until the copper concentration was greater than 25% at which a sharp reduction in saturation coverage occurred. This phenomenon was apparently due to the adsorption of hydrogen on Ni atoms followed by occupation of NiNi and CuNi bridged adsorption sites, while occupation of CuCu sites was restricted due to an energy barrier to migration.     

Adsorption and desorption of hydrogen on bare and Xe-covered Cu(111)

Using polarization-modulated ellipsometry to monitor adsorbate coverage in-situ, we studied the activated adsorption of filament-heated molecular hydrogen on Cu(111) and subsequent isothermal desorption of hydrogen adatoms. The adsorption is characterized by a zeroth-order kinetic with a constant sticking probability of S₀=0.0062 up to θ=0.25, followed by a Langmuir kinetic until the saturation coverage θ_s=0.5 is reached. The desorption follows a second-order kinetic with an activation energy of 0.63 eV and a pre-exponential factor of 1×10⁹ /s. A pre-adsorbed monolayer of Xe atoms on Cu(111), with a desorption activation energy of 0.25 eV and a pre-exponential factor of 8×10¹⁴ /s, efficiently blocks the subsequent adsorption of hot molecular hydrogen, making physisorbedXe useful as templates for spatial patterning of hydrogen adatom density on Cu(111). PACS 68.43.Jk; 78.68.+m; 81.15.-z; 82.40.Np     

Preparation of Nd-doped BiFeO3 films and their electrical properties

The Nd-doped BiFeO₃ thin films were prepared on SnO₂(FTO) substrates spin-coated by the sol–gel method using Nd(NO₃)₃·6H₂O, Fe(NO₃)₃·9H₂O and Bi(NO₃)₃·5H₂O as raw materials. The microstructure and electric properties of the BiFeO₃ thin films were characterized and tested. The results indicate that the diffraction peak of the Nd-doped BiFeO₃ films is shifted towards right as the doping amounts are increased. The structure is transformed from the rhombohedral to pseudotetragonal phase. The crystal grain is changed from an elliptical to irregular polyhedron. Structure transition occurring in the Bi_0.85Nd_0.15FeO₃ films gives rise to the largest Pr of 64 μC/cm². The leakage conductance of the Nd doped thin films is reduced. The dielectric constant and dielectric loss of Bi_0.85Nd_0.15FeO₃ thin film at 10 kHz are 190 and 0.017 respectively.     

Absolute desorption rate measurements for H2 chemisorbed on nickel

The change in the resistance of thin Ni films produced by the adsorption of H₂ was utilized to measure directly the isothermal adsorption-desorption kinetics for H₂ chemisorbed on Ni. The data is interpreted as showing that desorption from the chemisorbed state to the gas phase is bottlenecked by a precursor state of adsorbed molecular hydrogen. The absolute desorption rate for the precursor state has been measured over the temperature range 300–500°K.     

Effects of hydrogen flow on properties of hydrogen doped ZnO thin films prepared by RF magnetron sputtering

The hydrogen doped ZnO (ZnO:H) thin films were deposited on quartz glass substrates by radio frequency magnetron sputtering. The doping characteristics of ZnO:H thin films with varied hydrogen flow ratio were investigated. At low hydrogen flow ratio (H₂/(H₂+Ar)≤0.02), the ZnO:H thin films exhibited dominant (002) peaks from X-ray diffraction and the lattice constants became smaller. The particles were mainly a columnar structure. The particles’ size became smaller, and the island-like structure appeared on the thin films surface. In addition, the low resistivity properties of ZnO:H thin films was ascribed to the increase of the carriers concentration and carriers mobility; When the hydrogen flow ratio was more than 0.02 (M≥0.02), two absorption bands at 1400–1800 cm^?1 and 3200–3900 cm^?1 were observed from the FT-IR spectra, which indicated that the ZnO:H thin films had typical Zn–H bonding, O–H bonding (hydroxyl), and Zn–H–O bonding (like-hydroxyl). The scanning electron microscope (SEM) results show that a large number of hydroxyl agglomeration formed an island-like structure on the thin films surface. The absorption peak at about 575 cm^?1 in the Raman spectra indicated that oxygen vacancies (V_O) defects were produced in the process of high hydrogen doping. In this condition, the low resistivity properties of ZnO:H thin films were mainly due to the increasing electron concentration resulted from V_O. Meanwhile, the Raman absorption peaks at approximately 98 cm^?1 and 436 cm^?1 became weaker, and the (002) XRD diffraction peak quenched and the lattice constants increased, which shows that the ZnO:H thin films no longer presented a typical ZnO hexagonal wurtzite structure. With the increasing of hydrogen flow ratio, the optical transmittance of ZnO:H thin films in the ultraviolet band show a clear Burstein–Moss shift effect, which further explained that electron concentration was increased due to the increasing V_O with high hydrogen doping concentration. Moreover, the optical reflectance of the thin films decreased, indicating the higher roughness of the films surface. It was noteworthy that etching effect of H plasma was obvious in the process of heavy hydrogen doping.     

The temperature programmed desorption of hydrogen from platinum and platinum-gold films

The thermal desorption of hydrogen from Pt and PtAu films has been measured in an ultra-high vacuum system by means of a mass spectrometer. On the average, hydrogen is more loosely bound on the alloys than on pure Pt. About 50% of the adsorbate is desorbed by pumping at 78 K from the alloys while only a very small percentage is desorbed from Pt at this temperature. After maximum coverage of Pt films by hydrogen adsorption three desorption peaks have been observed: γ (120 K), β₁ (200 K) and β₂ (330 K). The same peaks have been found for the alloys as well but the relative population of the various adsorption types was different. The relative peak heights vary with the alloy composition.     

Improvement of magnetic properties and read/write characteristics in SmCo5 perpendicular thin films

An SmCo₅ alloy is a promising candidate for ultra-high density magnetic recording media because of its strong uniaxial magnetocrystalline anisotropy, whose constant, K_u, is more than 1.1×10⁸ erg/cm³. Recently, we successfully obtained high perpendicular magnetic anisotropy for a sputter-deposited SmCo₅ thin film by introducing a Cu/Ti dual underlayer. However, it is necessary to improve magnetic properties and read/write (R/W) characteristics for applying SmCo₅ thin films to perpendicular magnetic recording media. In this study, we focused on reduction of magnetic domain size and change of a magnetization reversal process of SmCo₅ perpendicular magnetic thin films by introducing carbon (C) atoms into the constituent Cu underlayer. The magnetic domain size became small and the ratio of coercivity (H_c) against magnetic anisotropy (H_k) which is an index of the magnetization reversal process was increased by adding C atoms. We also evaluated the R/W characteristics of SmCo₅ double-layered media including C atoms. The medium noise was decreased and signal-to-noise ratio increased by introducing the C. The addition of C into the Cu underlayer is effective for changing the magnetization reversal process, reducing medium noise and increasing SNR.     

The hall coefficient of YBa2Cu3O7-x thin films with (100) orientation

The Hall coefficientR _H and the resistivity of an (100) orientated YBa₂Cu₃O_7-x thin film was measured. A very smallR _H was obtained. The resulting carrier density is very different from the widely accepted value of the order of 10²¹ cm^–3 for the bulk sample. The result is explained with the influence of grain boundaries and the anisotropy of the thin films.     

Characterization of Cu(In,Ga)Se2 thin films prepared by evaporationfrom ternary compounds

Thin films of Cu(In,Ga)Se₂ were fabricated by evaporation from ternary CuGaSe₂ and CuInSe₂ compounds for photovoltaic device applications and their properties were investigated. From XRF analysis, the Cu:(In+Ga):Se atomic ratio in all thin films was approximately 1:1:2. The Ga/(In+Ga) atomic ratio in the thin films changed linearly from 0 to 1.0 with increasing the [CGS]/([CGS]+[CIS]) mole ratio in the evaporating materials. However, for thin films prepared at the [CGS]/([CGS]+[CIS]) mole ratio above 0.4, the composition by EPMA analysis was not consistent with that by XRF analysis. The result of EPMA analysis showed that the surface of a thin film was Cu-rich. XRD studies demonstrated that the thin films prepared at the [CGS]/([CGS]+[CIS]) mole ratio under 0.2 had a chalcopyrite Cu(In,Ga)Se₂ structure and the preferred orientation to the 112 plane. On the other hand, XRD patterns of the thin films produced at the [CGS]/([CGS]+[CIS]) mole ratio above 0.6 showed the diffraction lines from a chalcopyrite Cu(In,Ga)Se₂ and a foreign phase. The separation of a peak was observed near 2θ=27°, indicative the graded Ga concentration in Cu(In,Ga)Se₂ thin film.     

Nd photoluminescence study of Nd-doped Si-rich silica films obtained by reactive magnetron sputtering

Nd³⁺-doped silicon-rich silicon oxide (SRSO) thin films have been fabricated by reactive magnetron sputtering of a pure silica target topped with Nd₂O₃ chips. The concentration of Nd ions in the deposited layers is controlled by the number of Nd₂O₃ chips, whereas the incorporation of silicon excess is monitored by the hydrogen partial pressure, P_H2, introduced in the Ar plasma, owing to the ability of hydrogen to reduce the oxygen released by the sputtering of the silica target. Photoluminescence (PL) experiments were made at room temperature using a nonresonant excitation line from an Ar laser. The influences of Nd³⁺ content and P_H2 have been studied to optimize the Nd³⁺ emission. PL spectra reveal a two order of magnitude enhancement of the Nd³⁺ emission around both 0.9 and 1.1 μm, when Si nanoclusters (Si-nc) are formed in the same Nd³⁺-doped matrix. The dependence of the Nd³⁺ PL with P_H2 and Nd concentration is indicative of the occurrence of an efficient energy transfer from the Si-nc to the rare earth ions. The radiative lifetime is also deduced and commented in the light of Nd³⁺-Si-nc coupling.     

Study on ferroelectric polarization induced resistive switching characteristics of neodymium-doped bismuth ferrite thin films for random access memory applications

The present work reports on resistive switching (RS) characteristics of Neodymium (Nd)-doped bismuth ferrite (BFO) layers. The Nd (2–10 at%) doped BFO thin film layers were deposited using a spray pyrolysis method. The structural analysis reveals that a higher Nd doping concentration in BFO leads to significant distortion of the prepared Nd:BFO thin films from rhombohedral to tetragonal characteristics. The morphological analysis shows that all the deposited Nd:BFO thin films have regularly arranged grains. The X-ray photoelectron spectroscopy (XPS) analysis reveals that the prepared Nd:BFO thin films have a higher Fe ³⁺/Fe ²⁺ratio and less oxygen vacancy (V_O) defects which enriches the ferroelectric characteristics in Nd:BFO layers. The polarization-electric field (P-E) and RS characteristics of the fabricated Nd:BFO-based RS device were examined. It was observed that the Nd (7 at%) doped BFO RS device shows large remnant polarization (P _r) of 0.21 μC/cm² and stable RS characteristics.     

Effects of different deposition conditions on the properties of Cu2S thin films

Cu₂S thin films deposited on glass substrate by chemical bath deposition were studied at different deposition temperatures and times. The results of X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX), the Hall Effect measurement system and UV-Vis absorption spectroscopy indicate that both deposition temperature and time are important to obtain polycrystalline thin films. XRD showed that the polycrystalline Cu₂S thin films have monoclinic structure. Meanwhile, the structural variations were analyzed using SEM. EDX analysis results of the thin film showed that the atomic ratio of Cu/S was close to 2:1. It was found from the Hall Effect measurement that the resistivity varied from 4.59?×?10^?3 to 13.8?×?10^?3 (Ω?cm). The mobility values of the Cu₂S thin films having p-type conductivity varied from 15.16 to 134.6?cm²/V.s. The dark electrical resistivity measurements were studied at temperatures in the range 303–423?K. The electrical activation energies of Cu₂S thin films were calculated by using Arrhenius plots, from which two different activation energy values are estimated for each thin film. Using UV-Vis absorption spectroscopy (Ultraviolet/visible), the direct and indirect allowed optical band gap values were determined to lie between 2.16 and 2.37?eV and 1.79 and 1.99?eV, respectively. In addition, the values of the refractive index (n) and the extinction coefficient (k) were determined.     

Adsorption of hydrogen on evaporated cobalt films

Hydrogen adsorption on evaporated Co films has been studied by means of measurements of the surface potential changes that occur during this process, and analysis of the desorption spectrum of hydrogen. It has been observed that hydrogen adsorbed at 78 K on Co films exists in three forms with essentially different electrical properties: atomic, electronegatively polarized β^? form; atomic, electropositively polarized β⁺ form and reversibly adsorbed, molecular, positively polarized α form. The β^? form is not homogeneous from the point of view of the bond energy with the metal surface and consists of the states β_s^? and β^? characterized by activation energy of desorption 10.0 and 18.8 kcal/mol H₂ correspondingly. The Activation energy of desorption of the β⁺ form is low, i.e. 2.1 $\text{kcal}\text{mol}$ H₂.     

Band gap tunable and improved microstructure characteristics of Cu2ZnSn(S1−x,Sex)4 thin films by annealing under atmosphere containing S and Se

Cu₂ZnSn(S_xS_1?x)₄ (CZTSSe) thin films were prepared by annealing a stacked precursor prepared on Mo coated glass substrates by the sputtering technique. The stacked precursor thin films were prepared from Cu, SnS₂, and ZnS targets at room temperature with stacking orders of Cu/SnS₂/ZnS. The stacked precursor thin films were annealed using a tubular two zone furnace system under a mixed N₂ (95%) + H₂S (5%) + Se vaporization atmosphere at 580 °C for 2 h. The effects of different Se vaporization temperature from 250 °C to 500 °C on the structural, morphological, chemical, and optical properties of the CZTSSe thin films were investigated. X-ray diffraction patterns, Raman spectroscopy, and X-ray photoelectron spectroscopy results showed that the annealed thin films had a single kesterite crystal structure without a secondary phase. The 2θ angle position for the peaks from the (112) plane in the annealed thin films decreased with increasing Se vaporization temperature. Energy dispersive X-ray results showed that the presence of Se in annealed thin films increased from 0 at% to 42.7 at% with increasing Se vaporization temperatures. UV–VIS spectroscopy results showed that the absorption coefficient of all the annealed thin films was over 10⁴ cm^?1 and that the optical band gap energy decreased from 1.5 eV to 1.05 eV with increasing Se vaporization temperature.