共查询到20条相似文献,搜索用时 15 毫秒
1.
Monolayer MnTe 2 stabilized as 1T structure has been theoretically predicted to be a two-dimensional (2D) ferromagnetic metal and can be tuned via strain engineering. There is no naturally van der Waals (vdW) layered MnTe 2 bulk, leaving mechanical exfoliation impossible to prepare monolayer MnTe 2. Herein, by means of molecular beam epitaxy (MBE), we successfully prepared monolayer hexagonal MnTe 2 on Si(111) under Te rich condition. Sharp reflection high-energy electron diffraction (RHEED) and low-energy electron diffraction (LEED) patterns suggest the monolayer is atomically flat without surface reconstruction. The valence state of Mn 4+ and the atom ratio of ([Te]:[Mn]) further confirm the MnTe 2 compound. Scanning tunneling spectroscopy (STS) shows the hexagonal MnTe 2 monolayer is a semiconductor with a large bandgap of ~2.78 eV. The valence-band maximum (VBM) locates at the Γ point, as illustrated by angle-resolved photoemission spectroscopy (ARPES), below which three hole-type bands with parabolic dispersion can be identified. The successful synthesis of monolayer MnTe 2 film provides a new platform to investigate the 2D magnetism. 相似文献
2.
The nucleation of Si on Si(111) has been studied during deposition in UHV by spot profile analysis of low energy electron diffraction (SPA-LEED). A new method of evaluation is developed by separating the measured spot profile into a central spike and a broad shoulder. The energy dependence of the fraction of the central spike out of the total diffracted intensity provides the vertical distribution of surface atoms over different levels. With this method it is shown that the first nucleation occurs in islands of double height. Only after deposition of several layers a layer-by-layer growth is found with a well defined nucleation of a new layer before the former one is completed. 相似文献
4.
Low-energy electron diffraction and differential reflectance spectroscopy are used to study the self-formation of chromium disilicide (CrSi 2) nanoislands on a Si(111) surface. The semiconductor properties of the islands show up even early in chromium deposition at a substrate temperature of 500°C, and the two-dimensional growth changes to the three-dimensional one when the thickness of the chromium layer exceeds 0.06 nm. The maximal density of the islands and their sizes are determined. The MBE growth of silicon over the CrSi 2 nanoislands is investigated, an optimal growth temperature is determined, and 50-nm-thick atomically smooth silicon films are obtained. Ultraviolet photoelectron spectroscopy combined with the ion etching of the specimens with embedded nanocrystallites demonstrates the formation of the valence band, indicating the crystalline structure of the CrSi 2. Multilayer epitaxial structures with embedded CrSi 2 nanocrystallites are grown. 相似文献
5.
A study of the mechanism governing the initial stages in silicide formation under deposition of 1–10 monolayers of cobalt on a heated Si(111) 7×7 crystal is reported. The structural data were obtained by an original method of diffraction of inelastically scattered medium-energy electrons, which maps the atomic structure of surface layers in real space. The elemental composition of the near-surface region to be analyzed was investigated by Auger electron spectroscopy. Reactive epitaxy is shown to stimulate epitaxial growth of a B-oriented CoSi 2(111) film on Si(111). In the initial stages of cobalt deposition (1–3 monolayers), the growth proceeds through island formation. The near-surface layer of a CoSi 2(111) film about 30 Å thick does not differ in elemental composition from the bulk cobalt disilicide, and the film terminates in a Si-Co-Si monolayer triad. 相似文献
6.
Straight and well-aligned GaN nanorods have been successfully synthesized by molecular beam epitaxy (MBE) method. The GaN nanorods have been characterized by field-emission scanning electron microscopy (FE-SEM) equipped with energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). SEM images show that GaN nanorods are constituted with two parts of which shapes are different from each other. The upper part of the nanorod is very thin and its lower part is relatively thick. The XRD and EDS analysis have identified that the nanorods are pure hexagonal GaN with single crystalline wurtzite structure. The TEM images indicate that the nanorods are well crystallized and nearly free from defects. The XRD, HRTEM, and SAED pattern reveal that the growth direction of GaN nanorods is 〈0001〉. The photoluminescence (PL) spectra indicate the good emission property for the nanorods. Finally, we have demonstrated about the two-step growth of the nanorods. PACS 81.07.Bc; 81.05.Ea; 81.15.Hi 相似文献
7.
We present a novel approach to the molecular beam epitaxy of [111]-oriented GaAs. Surface-segregating In employed as an isoelectronic surfactant allows us to achieve mirror-like (111) GaAs surfaces within a wide range of growth conditions. Scanning electron and atomic force microscopy confirm the excellent morphology of the resulting samples. High-resolution X-ray diffraction shows the incorporation of In into the films to be negligible. Finally, we demonstrate a 10 Å-In 0.2Ga 0.8As/300 Å-GaAs superlattice based on surfactant-grown GaAs with a photoluminescence linewidth as narrow as 4.2 meV. 相似文献
9.
Molecular beam epitaxy (MBE) is a process for growing thin, epitaxial films of a wide variety of materials, ranging from oxides to semiconductors to metals. It was first applied to the growth of compound semiconductors. That is still the most common usage, in large part because of the high technological value of such materials to the electronics industry. In this process beams of atoms or molecules in an ultra-high vacuum environment are incident upon a heated crystal that has previously been processed to produce a nearly atomically clean surface. The arriving constituent atoms form a crystalline layer in registry with the substrate, i.e., an epitaxial film. These films are remarkable because the composition can be rapidly changed, producing crystalline interfaces that are almost atomically abrupt. Thus, it has been possible to produce a large range of unique structures, including quantum well devices, superlattices, lasers, etc., all of which benefit from the precise control of composition during growth. Because of the cleanliness of the growth environment and because of the precise control over composition, MBE structures closely approximate the idealized models used in solid state theory. This discussion is intended as an introduction to the concept and the experimental procedures used in MBE growth. The refinement of experimental procedures has been the key to the successful fabrication of electronically significant devices, which in turn has generated the widespread interest in the MBE as a research tool. MBE experiments have provided a wealth of new information bearing on the general mechanisms involved in epitaxial growth, since many of the phenomena initially observed during MBE have since been repeated using other crystal growth processes. We also summarize the general types of layered structures that have contributed to the rapid expansion of interest in MBE and its various offshoots. Finally we consider some of the problems that remain in the growth of heteroepitaxial structures, specifically, the problem of mismatch in lattice constant between layers and between layer and substrate. The discussion is phenomenological, not theoretical; MBE has been primarily an experimental approach based on simple concepts. 相似文献
11.
The crystal structure of GaAs nanowhiskers grown by molecular-beam epitaxy on Si(111) and Si(100) substrates is investigated using reflection high-energy electron diffraction (RHEED). It is revealed that, in both cases, the electron diffraction images contain a combination (superposition) of systems of reflections characteristic of the hexagonal (wurtzite and/or 4 H polytype) and cubic (sphalerite) phases of the GaAs compound. The growth on the Si(111) substrates leads to the formation of nanowhiskers with hexagonal (wurtzite and/or 4 H polytype) and cubic (sphalerite) structures with one and two orientations, respectively. In the case of the Si(100) substrates, the grown array contains GaAs nanowhiskers that have a cubic structure with five different orientations and a hexagonal structure with eight orientations in the (110) planes of the substrate. The formation of the two-phase crystal structure in nanowhiskers is explained by the wurtzite—sphalerite phase transitions and/or twinning of crystallites. 相似文献
12.
The results of the structural and morphological studies of Ge growth on a Si(111) surface at the initial stages of epitaxy
by means of scanning tunneling microscopy and high-resolution transmission electron microscopy are presented. Epitaxy of Ge
has been performed in the temperature range of 300 to 550°C under the quasi-equilibrium growth conditions and low deposition
rates of 0.001–0.01 bilayers per minute. The stages of the formation and decay of the nanoclusters as a result of the redistribution
of the Ge atoms into two-dimensional pseudomorphic Ge islands before the formation of the continuous wetting layer have been
experimentally detected. The positions of the preferable nucleation of three-dimensional Ge islands on the wetting layer formed
after the coalescence of the two-dimensional islands have been analyzed. The c2 × 8 → 7 × 7 → c2 × 8 phase transitions due
to the lateral growth of the islands and the plastic relaxation of the misfit strains occur on the surface of the three-dimensional
Ge islands when their strain state changes. The misfit dislocations gather at the interface and two types of steps lower than
one bilayer are formed on the surface of the three-dimensional islands during the relaxation process. 相似文献
14.
Self-assembled columnar AlGaN/GaN nanocavities, with an active region of GaN quantum disks embedded in an AlGaN nanocolumn and cladded by top and bottom AlN/GaN Bragg mirrors, were grown. The nanocavity has no cracks or extended defects, due to the relaxation at the Si interface and to the nanocolumn free-surface to volume ratio. The emission from the active region matched the peak reflectivity by tuning the Al content and the GaN disks thickness. Quantum confinement effects that depend on both the disk thickness and the inhomogeneous strain distribution within the disks are clearly observed. 相似文献
17.
New types of unstable homoepitaxial growth of vicinal surfaces are studied using ex situ atomic force microscopy. The growth features are two types of step bunching with straight step edges between 700 and 775 degrees C and one type of simultaneous bunching and meandering at 800 degrees C. The results of a quantitative size scaling analysis of the straight steps are discussed from the perspective of universality classes in bunching theory. 相似文献
18.
Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB(2)(0001) clarify the origin of the N polarity. 相似文献
19.
Epitaxial layers of GaAs grown on Si substrates, where the layer thickness greatly exceeds any critical thickness based on mismatch in lattice constant alone, have been shown to be under tensile strain for temperature at or below 300 K. This "thermal" strain arises from the difference in thermal expansion coefficients between GaAs and Si. We have performed Raman experiments on GaAs layers grown on both Si (001) and Si (111) substrates. We have observed a shift in the optical modes towards lower frequencies which is indicative of tensile strain in the GaAs layers, this is greater in the (111) growth direction than in the (001) one. In order to investigate the strain distribution as a function of distance from the GaAs/Si interface we have measured Raman spectra after successive removing of the epitaxial layer by chemical etching. We have found out that the strain decreases with increasing distance from the interface. We have developed the theory of Cerdeira et al. (1) to determine quantitatively the strain present in the heteroepitaxial layers. We have used, for the first time, polarization selection rules to separate the various components of the optical phonon modes. According to the theory we have observed that the doubly degenerate TO phonon line exhibits both a splitting and shift with strain, while only a shift is observed for the LO phonon line. In conformity with Cerdeira we have remarked that the strain dependence of the LO phonon is equal to that of the TO phonon mode observed in crossed polarization configuration. 相似文献
20.
We report the heteroepitaxial growth of SrTiO 3 thin films on Si(001) by hybrid molecular beam epitaxy (hMBE). Here, elemental strontium and the metal‐organic precursor titanium tetraisopropoxide (TTIP) were co‐supplied in the absence of additional oxygen. The carbonization of pristine Si surfaces during native oxide removal was avoided by freshly evaporating Sr into the hMBE reactor prior to loading samples. Nucleation, growth and crystallization behavior as well a structural properties and film surfaces were characterized for a series of 46‐nm‐thick SrTiO 3 films grown with varying Sr to TTIP fluxes to study the effect of non‐stoichiometric growth conditions on film lattice parameter and surface morphology. High quality SrTiO 3 thin films with epitaxial relationship (001)SrTiO 3 || (001)Si and [110]SrTiO 3 || [100]Si were demonstrated with an amorphous layer of around 4 nm thickness formed at the SrTiO 3/Si interface. The successful growth of high quality SrTiO 3 thin films with atomically smooth surfaces using a thin film technique with scalable growth rates provides a promising route towards heterogeneous integration of functional oxides on Si. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
|