CoFeB/Pt多层膜的垂直磁各向异性研究

具有垂直磁各向异性的磁性纳米结构是自旋转移力矩器件的重要研究内容, 本文采用反常霍尔效应系统地研究了磁控溅射法制备的[CoFeB/Pt]_n多层膜的垂直磁各向异性. 当CoFeB的厚度小于0.6 nm时, 可以在[CoFeB/Pt]_n多层膜中观察到清晰的垂直磁各向异性, 其垂直磁各向异性强烈依赖于CoFeB和Pt层厚度及多层膜周期数. 当多层膜周期数n ≥ 5时, 出现零剩磁现象. 另外, [CoFeB/Pt]_n多层膜的矫顽力均小于2 kA·m^-1, 有望作为垂直自由层的重要侯选材料应用于垂直磁纳米结构中.     

MgO/Pt界面对增强Co/Ni多层膜垂直磁各向异性及热稳定性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层和MgO/Pt双底层的Co/Ni多层膜样品, 通过反常霍尔效应研究了不同MgO厚度和退火温度对样品垂直磁各向异性(perpendicular magnetic anisotropy, PMA)的影响. 随着底层中MgO厚度的逐渐增加, 样品的矫顽力也随之增强, 霍尔电阻变化不大; 对样品进行退火处理后发现, 单纯Pt底层的Co/Ni多层膜随着退火温度的升高, 霍尔电阻逐渐降低, 矫顽力则迅速降低, 热稳定性较差; 而当MgO/Pt双底层的样品在200 ℃退火后矫顽力大幅增加, 霍尔电阻略微有所减小, 更高的退火温度使得Co和Ni合金化, 导致多层膜的PMA特征减弱.     

Co/Ni多层膜垂直磁各向异性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层的Co/Ni多层膜样品, 对影响样品垂直磁各向异性的各因素进行了调制, 通过样品的反常霍尔效应系统的研究了Co/Ni多层膜的垂直磁各向异性. 结果表明, 多层膜中各层的厚度及周期数对样品的反常霍尔效应和磁性有重要的影响. 通过对多层膜各个参数的调制优化, 最终获得了具有良好的垂直磁各向异性的Co/Ni多层膜最佳样品Pt(2.0)/Co(0.2)/Ni(0.4)/Co(0.2)/Pt(2.0), 经计算, 该样品的各向异性常数K_eff 达到了3.6×10⁵ J/m³, 说明样品具备良好的垂直磁各向异性. 最佳样品磁性层厚度仅为0.8 nm, 样品总厚度在5 nm以内, 可更为深入的研究其与元件的集成性.     

Pt/La0.67Sr0.33MnO3异质结中的反常霍尔效应

非磁/铁磁异质结构中存在很多有趣的演生现象,特别是,铂/铁磁异质结构中的反常霍尔效应是一个研究热点.采用脉冲激光沉积技术和射频磁控溅射技术制备出具有原子级接触界面的铂/锰酸锶镧异质结,并对异质结的电输运性能进行了系统的研究.实验发现,铂/锰酸锶镧异质结中存在由铂贡献的反常霍尔效应,这是由磁近邻效应诱导铂表现出铁磁性造成的.反常霍尔电阻随着温度的降低而急剧增加,并且在低于40 K时改变符号.反常霍尔电阻随铂厚度的增加而急剧降低,证实了铂的铁磁性起源于异质结界面.此外,异质结在低外加磁场下可能产生了拓扑霍尔效应,这是由异质结界面处的Dzyaloshinskii-Moriya相互作用诱导产生手性磁畴壁结构引起的.上述研究结果为进一步理解非磁/铁磁异质结构中的电子自旋和电荷输运之间的相互作用提供了实验基础.     

多层膜［Co85Cr15/Pt］20的磁性、垂直磁记录特性和微结构的关系

采用磁控溅射法制备了性能优良的以Pt为缓冲层的［Co85₈₅Cr15_{15/Pt］2020 多层膜，研究了溅射气压对［Co8585Cr1515/Pt］2020多层膜微结构和磁性的 影响.研究结果表明，Ar溅射气压对［Co8585Cr1515/Pt］2020多层膜的微结构 、垂直磁各向异性和矫顽力有重要的影响 关键词： 溅射气压 多层膜 垂直磁各向异性 有效磁各向异性常数}     

磁性拓扑绝缘体中的量子化反常霍尔效应

文章从平常霍尔效应出发,介绍了反常霍尔效应及其内秉物理机制,并在此基础上介绍了其量子化版本——量子化反常霍尔效应.然后从拓扑有序态的角度,重点讨论了量子化反常霍尔效应与量子霍尔效应、量子自旋霍尔效应、拓扑绝缘体等之间的区别与内在联系.最后介绍了通过在拓扑绝缘体（Bi2Se3, Bi2Te3 和 Sb2Te3）薄膜中掺杂过渡金属元素（Cr 或 Fe）实现量子化反常霍尔效应的方法.     

磁性拓扑绝缘体中的量子化反常霍尔效应——无需外磁场的量子化霍尔效应

文章从平常霍尔效应出发,介绍了反常霍尔效应及其内秉物理机制,并在此基础上介绍了其量子化版本——量子化反常霍尔效应.然后从拓扑有序态的角度,重点讨论了量子化反常霍尔效应与量子霍尔效应、量子自旋霍尔效应、拓扑绝缘体等之间的区别与内在联系.最后介绍了通过在拓扑绝缘体(Bi2Se3,Bi2Te3和Sb2Te3)薄膜中掺杂过渡金属元素(Cr或Fe)实现量子化反常霍尔效应的方法.     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)n/FeMn多层膜.研究结果表明,多层膜的垂直交换偏置场Hex和反铁磁层厚度的关系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期数的增加,垂直交换偏置场Hex相应减小,并且与铁磁层的调制周期数近似成反比关系.(Pt/Co)3/FeMn的垂直交换偏置场Hex已经达到22.3kA/m.为了进一步提高Hex,在Co/FeMn的界面插入Pt层,当Pt层厚度为0.4nm时,Hex达到最大值39.8kA/m.     

Pt插层对Co/FeMn界面的影响

采用磁控溅射的方法制备了Co/FeMn/Co多层膜,研究了Co（底部）/FeMn和FeMn/Co（顶部）界面插入Pt层后磁矩的变化情况．通过测量磁滞回线可知,Co（底部）/FeMn界面的Pt插层改变了体系的饱和磁化强度Ｍ_s,随着Co层厚度（t_Co）的增加Ｍ_s不断趋近于Co块体结构理论值1440 kA/m．这是因为Co（底部）/FeMn界面产生了净磁矩,而界面处的Pt插层可以减少这种净磁矩的产生．但是 关键词： 磁性多层膜 垂直磁各向异性 交换耦合     

具有垂直各向异性(Pt/Co)n/FeMn多层膜的交换偏置

采用磁控溅射方法制备了以Pt为缓冲层和保护层的具有垂直各向异性(Pt/Co)_n/ FeMn多层膜.研究结果表明，多层膜的垂直交换偏置场H_ex和反铁磁层厚度的关 系与其具有平面各向异性的交换偏置场随反铁磁层厚度变化趋势相近.随着铁磁层调制周期 数的增加，垂直交换偏置场H_ex相应减小，并且与铁磁层的调制周期数近似成反 比关系.(Pt/Co)₃/FeMn的垂直交换偏置场H_ex已经达到22.3kA/m.为 关键词： 交换偏置 垂直各向异性 多层膜     

Anomalous Hall effect and perpendicular magnetic anisotropy in Sm28Fe72 and Sm32Fe68 thin films

Sm₂₈Fe₇₂ and Sm₃₂Fe₆₈ films of 100 nm thickness were grown using DC magnetron sputter deposition and their structure, magnetization, electrical and Hall resistance characteristics were investigated. An increase in electrical resistivity from 4.75×10⁻⁶ to 5.62×10⁻⁶ Ω m and from 2.26×10⁻⁶ to 2.84×10⁻⁶ Ω m for Sm₂₈Fe₇₂ and Sm₃₂Fe₆₈ films, respectively, with decrease in temperature from 300 to 40 K is attributed to the strain induced anisotropy that dominates at lower temperatures. The positive extraordinary Hall coefficients (R_S) are observed for both films at 300 and 80 K. The existence of hysteresis indicates that Sm₂₈Fe₇₂ and Sm₃₂Fe₆₈ films possess perpendicular anisotropy at 300 K. Hysteresis loop becomes narrow at 80 K for both Sm₂₈Fe₇₂ and Sm₃₂Fe₆₈ films. Magnetization measurements at 300 K exhibiting small coercive field values of 31 and 49 Oe for Sm₂₈Fe₇₂ and Sm₃₂Fe₆₈ films, respectively, confirm the existence of perpendicular anisotropy at 300 K.     

Large enhancement of domain wall-induced anomalous magnetoresistance in ferrimagnetic Tb/Co wires: The effect of injecting spin Hall current

We demonstrated domain wall (DW)-induced anomalous magnetoresistance (MR) generated in asymmetric and symmetric ferrimagnetic Tb/Co multilayered, and Tb–Co alloyed wires. The extraordinary Hall effect (EHE)-induced circulating currents in the vicinity of DWs between longitudinal voltage probes are assigned to the anomalous MR. A large anomalous MR ~1.5% was obtained in the asymmetric Tb/Co multilayered wire. The large MR can be attributed to an addition of spin Hall current with a long coherence length from an adjacent Pt layer. These results open new possibilities for the use of ferrimagnetic multilayered wires beyond multi-function devices.     

Large planar Hall effect in perpendicularly magnetized W/CoFeB/MgO structures

The planar Hall effect (PHE) in W/CoFeB/MgO structure with perpendicular magnetic anisotropy was investigated as a function of CoFeB thickness (t_CoFeB). The PHE is measured by sweeping the in-plane magnetic field at various azimuthal angles as well as by rotating strong magnetic field which is enough to saturate the magnetization. We observed a huge PHE in the W/CoFeB/MgO sample, which is even larger than anomalous Hall effect (AHE). This is distinct from the results in Ta/CoFeB/MgO samples showing a much smaller PHE than AHE. Since the PHE is insensitive to the t_CoFeB while the AHE is proportional to the t_CoFeB, the unprecedented PHE can be attributed to the W layer with a large spin-orbit coupling.     

Ultrathin (CoFe/Pt)n multilayers with tuned magnetic properties

Perpendicular magnetic anisotropy (PMA) has been investigated in ultrathin (CoFe [0.2] nm/Pt [0.2] nm)_n multilayers. The Pt layers show an fcc crystal structure with a preferred [111] orientation. The multilayers with n=3, 4 show PMA in the as-grown state, which can be enhanced by thermal annealing. However, no PMA is observed in the as-grown state with higher repetitions (n>&=5), although it is observed after thermal annealing. For 1=&<n=&<8, the anisotropy energy is around 10⁵ J/m³ for all (CoFe [0.2]/Pt [0.2])_n stacks. The perpendicular anisotropy is related to layer thickness and interface roughness.     

Anomalous Hall effect in perpendicular CoFeB thin films

Our recent research achievements in the perpendicular magnetic anisotropy （PMA） properties of the CoFeB sand- wiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin fihn. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeBFFa thin film with a thick MgO layer, which opens a door tbr future device applications of perpendicular ferromagnetic thin films.     

Spin-dependent thermoelectric effect in Co2Fe0.4Mn0.6Si thin film with perpendicular magnetic anisotropy

We report the anomalous Nernst effect in trilayers containing a thin film of the half-metallic ferromagnetic Heusler alloy Co₂Fe_0.4Mn_0.6Si with perpendicular magnetic anisotropy. The structure is MgO/CFMS/Pd and we have studied the variation of anomalous Hall and Nernst effects as a function of CFMS and Pd thickness. The anomalous Nernst coefficient reaches 0.5 μV/K at room temperature and we have observed a strong dependence of the anomalous Nernst coefficient on the thickness of both layers. Our results indicate that inducing perpendicular magnetic anisotropy in a strongly spin-polarising Heusler alloy such as CFMS is very promising for new thermoelectric devices based on exploiting the anomalous Nernst effect.     

GdFeCo/AlN/TbFeCo薄膜的变温磁化性能研究

用磁控溅射法制备了GdFeCo/AlN/TbFeCo静磁耦合多层薄膜。振动样品磁强计和克尔磁滞回线测试装置的测试结果表明 :2 5℃不加外磁场时GdFeCo/AlN/TbFeCo静磁耦合多层薄膜读出层 (GdFeCo)的极向克尔角为零 ,读出层呈平面磁化 ;12 5℃不加外场时读出层的克尔角最大 (0 .5 4°) ,读出层的磁化方向为垂直磁化 ;随着温度增高 ,读出层由平面磁化转变为垂直磁化 ,在 75℃到 12 5℃温度范围内读出层磁化方向很快从平面磁化转变为垂直磁化。对磁化过程的机理研究表明 :饱和磁化强度和有效各向异性常量影响读出层磁化方向的转变过程 ,但主要受读出层饱和磁化强度的影响 ;在较高温度时读出层的磁化强度较小 ,退磁场能较小 ,在静磁耦合作用下 ,使GdFeCo读出层的磁化方向发生转变。制备的GdFeCo/AlN/TbFeCo静磁耦合多层薄膜适合作CAD MSR记录介质     

Mg0.3Fe2.7GeTe2 单晶的磁性及霍尔效应研究

Fe3GeTe2 是一种具有稳定长程磁有序的准二维范德瓦尔斯磁性材料, 范德瓦尔斯材料的稳定性和可调性使其在自旋电子器件的应用方面具有巨大潜力. 本文用助熔剂法生长了 Mg 原子掺杂Fe2 位的 Mg0.3Fe2.7GeTe2单晶样品, 并对 Mg 掺杂Fe3GeTe2 的结构、磁性和输运性质的影响进行了研究. 磁性数据表明 Mg 掺杂后铁磁转变温度不变, 但样品的饱和磁矩减小. 输运性质的测量中观察到各向异性的反常霍尔效应, 与Fe3GeTe2 相比, Mg掺杂后的反常霍尔电阻率减小, 同时各向异性发生了变化.     

Measurement of the nucleation and domain depinning field in a single Co/Pt multilayer dot by Anomalous Hall effect

Co/Pt multilayer dots with perpendicular anisotropy and with diameters of 250 and 350 nm were fabricated on top of a Hall cross configuration. The angular dependence of the magnetic reversal of the individual dot was investigated by Anomalous Hall effect measurements. At near in-plane angles (85° with the magnetic easy axis) the dot switches partially into a stable two-domain state. This allows for separate analysis of the angular dependence of both the field required for nucleation of a reversed domain, and the field required for depinning of the domain wall. The angular dependence of the depinning field fits accurately to a 1/cos(θ) behavior, whereas the angular dependence of the nucleation field shows a minimum close to 45°. The latter dependency can be accurately fitted to the modified Kondorsky model proposed by Schumacher [1].