Poly(organylsilylene)s — perspective materials for optoelectronics

Poly(organylsilylene)s with their uninterrupted chains of silicon atoms are a new class of materials with significant delocalization of electrons along the polymer chain. Their electronic structure, optical properties, photoconductivity, electroluminescence, and photorefractivity are discussed on the model compound poly[methyl(phenyl)silylene]. Their unusual electrical and optical properties, such as high quantum generation efficiency, high charge-carrier mobility, efficient luminescence, and optical non-linearity, can be utilized in some optoelectronic devices. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. This work was suported by the Grant Agency of the Academy of Sciences of the Czech Republic (grant No. A1050901) and by the Grant Agency of the Czech Republic (grant No. 106/98/0700).     

Testing of resonant tunneling double barrier heterostructures by BEEM/BEES

This work shows how ballistic electron emission microscopy and spectroscopy (BEEM/BEES) can be used for study of the tunneling double barrier heterostructures. From positions of resonant levels follows that roughness at the interfaces is present. The variation of the thickness of the well atributed to the existed roughness is estimated using simple calculation. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. This work is partly supported by the Grant Agency of the Czech Republic under grant No. 102/97/0427.     

Deposition and characterization of organosilicon thin films from TEOS+O2 gas mixture

The composition of films deposited in RF glow discharge tubular reactor fed with tetraethoxysilane (TEOS) and oxygen mixtures at various temperatures, gas flows, gas pressures and various self-bias voltages were investigated by means of different diagnostic methods. The thickness, stress in thin films, hardness, composition and optical properties of deposited thin films were determined.The work was supported by the Grant Agency of the Czech Republic, grant No. 202/93/2118.     

Development of special optical fibers for evanescent-wave chemical sensing

The paper summarizes results achieved in the Institute of Radio Engineering and Electronics in the field of investigation and fabrication of novel fiber-optic structures for evanescent-wave chemical sensing. Several approaches for increasing the evanescent-wave sensitivity of multimode silica optical fibers to gaseous and liquid chemicals are shown. These approaches make use of the decrease of the core diameter in sectorial and capillary sectorial fibers, modification of trajectories of optical rays in the cores of inverted-graded-index fibers, tailoring of the refractive index of porous layers applied on silica cores, an output mode filter preventing the detection of rays propagating at low axial angles or fibers bent in single or multiple turns. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. This work was supported by the Grant Agency of the Czech Republic (projects No. 102/96/0939 and No. 102/98/1358) and by joint project No. 4104 of AS CR and CNRS, France.     

Study of microwave plasma-assisted chemical vapor deposition of poly-and single-crystalline diamond films

We study conditions for microwave plasma-assisted chemical vapor deposition of high-quality single-crystal diamond films in a CVD reactor. These conditions are studied using the results of homoepitaxial growth of polycrystalline diamond films on diamond substrates and on the basis of numerical simulation of the microwave discharge in a CVD reactor. A high-quality single-crystal diamond layer is synthesized on a synthetic, type Ib diamond substrate. The properties of the obtained monolayer are studied by means of Raman and X-ray diffraction spectroscopy as well as optical and atomic-force microscopy.     

Photoacoustic spectroscopy of diamond powders and polycrystalline films

Photoacoustic spectroscopy is used to study optical absorption in diamond powders and polycrystalline films. The photoacoustic spectra of diamond powders with crystallite sizes in the range from ∼100 μm to 4 nm and diamond films grown by chemical vapor deposition (CVD) had a number of general characteristic features corresponding to the fundamental absorption edge for light with photon energies exceeding the width of the diamond band gap (∼5.4 eV) and to absorption in the visible and infrared by crystal-structure defects and the presence of non-diamond carbon. For samples of thin (∼10 μm) diamond films on silicon, the photoacoustic spectra revealed peculiarities associated with absorption in the silicon substrate of light transmitted by the diamond film. The shape of the spectral dependence of the amplitude of the photoacoustic signal in the ultraviolet indicates considerable scattering of light specularly reflected from the randomly distributed faces of the diamond crystallites both in the polycrystalline films and in the powders. The dependence of the shape of the photoacoustic spectra on the light modulation frequency allows one to estimate the thermal conductivity of the diamond films, which turns out to be significantly lower than the thermal conductivity of single-crystal diamond. Fiz. Tverd. Tela (St. Petersburg) 39, 1787–1791 (October 1997)     

Conformational properties of poly(p-Phenylene vinylene)

We investigate the quasiparticle conformational defects (excitons, polarons and bioplarons) in the phenylene vinylene oligomers. The conformations are determined by means of the minimization of the total Hartree-Fock energy calculated at 3–21G level. The infrared vibrational transitions are calculated and the types of vibrations are assigned. The theoretical spectra are in good agreement with the experimental vibrational spectrum of poly(p-phenylene vinylene). Presented at the Czech-Israeli-German Symposium “Dynamical Processes in Condensed Molecular Systems”, Prague, Czech Republic, 26–30 May 1997. The quantum mechanical calculations were performed on the following computers: Power Challenge XL at Prague Supercomputing Centre, Charles University, IBM Power 2 at Supercomputing Centre of the Czech Technical University and Power Challenge XL at Supercomputing Centre Brno. The work is supported by Projects No. 202/94/0453 and 202/97/1016 of the Grant Agency of the Czech Republic and by Project No. 155/96 of the Grant Agency of the Charles University.     

Preparation and properties of Er and Yb doped InP-based semiconductor compounds

In this paper we pursue the effect of the erbium and ytterium addition during the liquid phase epitaxial (LPE) growth on physical properties of thin InP layers. Series of InP layer samples were prepared by LPE from the melts containing 0–0.3 wt.% of Er and Yb. The grown layers were examined by the Hall effect andC-V measurements, photoluminescence spectroscopy and Rutherford backscattering spectrometry (RBS). We have found that only Yb impurity was incorporated into the lattice of InP layer. With increasing Yb content in the growth melt the layer’s conductivity smoothly changed from n to p type when Yb admixture exceeded certain limit. On the basis of these results we prepared p-n junctions in the InP layers directly doped by Yb, and tested then byC-V measurements. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. This work has been supported by the Grant Agency of the Czech Republic, project No. 102/99/0341.     

Nanocrystalline titanium carbide thin films deposited by reactive magnetron sputtering

We investigated the structure and composition of titanium carbide thin films deposited by the reactive magnetron sputter ion plating process as a function of deposition parameters. The films were sputtered onto unheated glass substrates by means of an unbalanced planar d.c. magnetron equipped with a titanium target using a mixture of argon and methane. The deposition parameters ranged from 0.05 Pa to 2 Pa for total working gas pressurep _T, from 10% to 60% (volume) for relative methane concentration in the working gas mixture, from 45 mm to 85 mm for the substrate-to-target distanced _s-t and from −50V to −800V for the substrate biasU _S. It was found that the crystallinity of the thin films strongly decreases with increasingp _T,d _s-t andU _S. The experiments described show the conditions necessary to obtain sputter-deposited nanocrystalline titanium carbide films. This work has been partially supported by the Grant Agency of the Czech Republic under Grant No. 106/96/K245 and by the Ministry of Education of the Czech Republic under Grant No. VS96 059.     

Kinetic Monte Carlo simulations of Si/Si(111)7×7 homoepitaxy

Kinetic processes that influence epitaxial growth of thin films are being more and more explored. Recent observations of growth on reconstructed surfaces suggested that material attachment to existing islands may be hindered by a barrier to attachment. We present a kinetic Monte Carlo model of Si/Si(111)7×7 homoepitaxy with the barrier to attachment implemented. We show that this model successfully reproduces available experimental results obtained during initial stages of growth and during surface relaxation. We show that the high scaling exponents experimentally observed are due to specific growth kinetics of the Si/Si(111)7×7 system. Presented at the VIII-th Symposium on Surface Physics, Třešt’ Castle, Czech Republic, June 28 – July 2, 1999. This work was supported by the Grant Agency of the Czech Republic, project GAČR 202/97/1109 and by the Volkswagen Stiftung.     

Analytical expressions for polar magnetoptics in magnetic multilayers

This paper is a comprehensive study of different formalisms used to simulate polar magneto-optical (MO) effects in multilayers. A development of the 4 × 4 matrix calculation to first order in off-diagonal elements of the permittivity tensor gives original analytical expressions. They allow to express the MO effects in multilayers as a sum of contributions from individual layers. Each contribution consists of two components assigned to the interface and propagation effects. The explicit expressions for multilayers containing up to seven layers, together with those obtained in the frame of an ultrathin layer approximation, are shown to be useful both in a qualitative comprehension and in quantitative simulations of the experimental MO Kerr spectra of a wide variety of ultrathin magnetic structures. They can be used to separate the different contributions arising from the interfaces due to intermixing or spin polarization (including interface roughness) as well as to simulate magnetically coupled multilayers. As an example, the analytical expression is provided for a system consisting of two ultrathin films separated by a non-magnetic spacer and deposited on a non-magnetic substrate. The capabilities of the analytical expressions are demonstrated on MO spectroscopy in a broad spectral range of some well characterized ultrathin magnetic structures. This work has been partially supported by HCM programme “Magnetic properties of novel ultrathin films” (project number ERBCIPDCT940622), NATO Grant “High Technology” (LG931415) and Grant Agency of Czech Republic (# 202/97/1180 and # 202/00/0761).     

Strained In x Ga1−x As/GaAs multiple quantum wells grown by MOVPE

Luminescence properties of strained In _x Ga_1−x As/GaAs multiple quantum wells of different thickness and In content, prepared by metal organic vapour phase epitaxy were studied. The influence of the quantum well material composition on the shape of luminescence spectra was investigated. The experimental results were fitted by the Model Solid Theory. This fit was improved by the use of adjustedQ parameter. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. This work was supported by Grant Agency of Czech Republic under grants numbers 202/98/0074, 102/99/0414 and Grant Agency of Academy of Sciences No. A 10110807/1998.     

Preparation and properties of thick not intentionally doped GaInP(As)/GaAs layers for optoelectronic applications

We report on liquid phase epitaxial growth of thick layers of GaInP(As) lattice matched to GaAs. Layers with thicknesses up to 7 μm were prepared in multi melt bin, step-cooling, one-phase configuration. Unintentionally doped layers, grown from moderate purity starting materials show significant decrease in the residual impurity level when erbium was added into the melt. Fundamental electrical and optical properties of the layers were investigated. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. This work was partially supported by the Grant Agency of the Acad. Sci. CR under contract GAAV No. A 1010807/1998.     

A contribution to the characterization of laser-hardened steel surfaces

The article deals with the possibility to characterize the laser heat-treatment of steel surface by means of X-ray diffraction and microhardness measurements. For tensometric analysis the X-ray one-tilt method with no reference substance was used. It is shown that hardened surface layers of the carbon steel are affected by compressions reaching in the middle of the laser beam track up to ≈ 350 MPa. The microhardness increased by as much as 350 %. Presented at the 6th Joint Seminar “Development of Materials Science in Research and Education”, Karlštejn, Czech Republic, 17–19 September 1996. This research is a part of the research project supported by Grant Agency of the Czech Republic (Grant No. 106/95/0080).     

Investigation of radial profiles of vibrational and rotational temperatures in nitrogen DC glow discharge

Spatially resolved measurements of vibrational and rotational temperature determined from the N₂(C) nitrogen bands intensities have been performed by means of optical scanner of original construction. It has been found that radial variations of studied bands are independent of pressure and discharge current under our experimental conditions, i.e. in the pressure range (100–300) Pa and for discharge current up to 40 mA. Moreover, it has been found that vibrational as well as rotational temperatures stay almost constant in the radial direction. No radial changes of both temperatures can be explained by good thermal conductivity of the positive column of DC glow discharge. This research was supported by grants: Charles University No. GAUK 194/01, Ministry of Education of Czech Republic MSM 11320002, and Grant Agency of Czech Republic GAČR 202/03/0827. The theme of presented article was included in the EU project No. G1RT-CT-2002-05083 “Plasmatech”.     

Photo-induced charge transfer in poly(methyl-phenylsilylene)

Photoconductivity in rigid polymers is based on complex processes including photo-induced electron transfer, formation of ion pairs and their dissociation in an external electric field. Thus, the charge carrier photogeneration in macromolecules differs largely from the direct band-gap excitation and the formation of free electrons and holes in inorganic materials. The processes mentioned above were studied on a catena silicon polymer, namely poly(methyl-phenylsilylene). Presented at the Czech-Israeli-German Symposium “Dynamical Processes in Condensed Molecular Systems”, Prague, Czech Republic, 26–30 May 1997. This work was supported in part by the Grant Agency of the Academy of Sciences of the Czech Republic (Grant No. 45007). Additional support was provided in the framework of the Bilateral Scientific-Technical Cooperation between the Czech Republic and Federal Republic of Germany, project Photo/Electro-Respondent Materials (KONTAKT, No. ME 087 and FKZ-Nr. TSR-005-95).     

Laser polishing of diamond plates

Results are reported on laser polishing of 150–400-μm-thick free-standing diamond films with either a copper vapor laser (510 nm wavelength) or an ArF excimer laser (193 nm wavelength). Studies were focused on three particular goals. First, we aimed at a choice of optimum conditions for laser polishing of thick diamond films. It was shown that the laser polishing conditions and the resulting surface roughness were controlled by varying the angle of incidence of a scanning laser beam and by polishing time. Second, the laser ablation technique was applied to remove a defective layer from the “substrate” side of the diamond plates in order to reduce optical losses due to absorption in this layer. Third, the structure of the laser-graphitized diamond surface was studied using UV, visible, and IR optical spectroscopy techniques in the course of the “step-by-step” oxidative removal of the graphitic layer with increasing temperature of the oxidation in ambient air. Once the graphitic layer was removed, the optical transmission in the UV-visible-IR spectral range of the diamond films polished under optimum conditions was measured and compared with the optical transmission of the mechanically polished diamond films. It was shown that the optical quality (in the long-wave infrared region) of the laser-polished diamond plates was sufficient to reach the transmittance value very close to the theoretical limit. Received: 20 October 1998 / Accepted: 8 March 1999 / Published online: 5 May 1999     

Microwave plasma deposition of diamond like carbon coatings

The promising applications of the microwave plasmas have been appearing in the fields of chemical processes and semiconductor manufacturing. Applications include surface deposition of all types including diamond/diamond like carbon (DLC) coatings, etching of semiconductors, promotion of organic reactions, etching of polymers to improve bonding of the other materials etc. With a 2.45 GHz. 700 W, microwave induced plasma chemical vapor deposition (CVD) system set up in our laboratory we have deposited diamond like carbon coatings. The microwave plasma generation was effected using a wave guide single mode applicator. We have deposited DLC coatings on the substrates like stainless steel, Cu-Be, Cu and Si. The deposited coatings have been characterized by FTIR, Raman spectroscopy and ellipsometric techniques. The results show that we have achieved depositing ∼95% sp³ bonded carbon in the films. The films are unform with golden yellow color. The films are found to be excellent insulators. The ellipsometric measurements of optical constant on silicon substrates indicate that the films are transparent above 900 nm.     

On the chaining dynamics of inclusions in SmC* free standing films

A simplified model of an inclusion represented by (+1)-wedge disclination and an accompanying hyperbolic defect ((−1)-wedge disclination) in smectic C* free standing films is used to describe the early stage of the ordering process of inclusions into chains. The elastic interaction between inclusions and their associated hyperbolic defects is used to discuss the dynamics observed experimentally during the inclusion chaining when inclusions are at distances much larger than their radii. This work was also supported by Grant No. 202/02/0840 of the Grant Agency of the Czech Republic and by the research project AV0Z1-010-914.     

Ab-initio theory of the CPP-magnetoconductance

The current-perpendicular-to-plane (CPP) magnetoconductance of a trilayer consisting of a spacer sandwiched between two ideal leads is described on anab initio level. We employ the transmission matrix formulation of the conductance within the framework of the spin-polarized surface Green function technique as formulated in terms of the tight-binding linear muffin-tin orbital method. The formalism is extended to the case of lateral supercells in each layer with random arrangements of atoms which allows to treat both the ballistic and diffusive transports on equal footing. The application is made to fcc-based Co/Cu/Co(001) trilayers. Presented at the VIII-th Symposium on Surface Physics, Třešt’ Castle, Czech Republic, June 28 – July 2, 1999. Financial support for this work was provided by the Grant Agency of the Czech Republic (Project No. 202/97/0598), the Grant Agency of the Academy of Sciences of the Czech Republic (Project A1010829), the Center for the Computational Materials Science in Vienna (GZ 45.442 and GZ 45.420), the Austrian BMWV (AKTION WTZ-?sterreich-Tschechien I.23), MŠMT ČR (Project COST P3.70), and the TMR Network ‘Interface Magnetism’ of the European Commission (Contract No. EMRX-CT96-0089).