温度对Al_(0.5)Ga_(0.5)As/AlAs分布布喇格反射器的反射谱影响

采用光学传输矩阵理论对Al0.5Ga0.5As/AlAs材料分布布喇格反射器(DBR)进行理论研究,分析了-10℃到100℃的范围内,温度变化对不同DBR结构的反射光谱影响.结果表明:随着温度的升高,传统20周期DBR的反射光谱向长波长方向移动,速率约0.05 nm/℃,其中由线热膨胀系数带来的影响小于0.001 nm/℃.当传统DBR的周期数增大时,温度对DBR光谱反射率的影响在减小,同时DBR的反射谱峰值波长发生红移.为了降低温度对DBR反射光谱的影响,提出一种新型的复式DBR结构.分析指出:该复式DBR比传统DBR有更大的反射光谱半峰宽,基本能覆盖同温度的AlGaInP LED电致发光光谱,这对提高LED的出光效率有现实意义.     

温度对Al0.5Ga0.5As/AlAs分布布喇格反射器的反射谱影响

采用光学传输矩阵理论对Al0.5Ga0.5As/AlAs材料分布布喇格反射器(DBR)进行理论研究,分析了－10℃到100℃的范围内,温度变化对不同DBR结构的反射光谱影响.结果表明：随着温度的升高,传统20周期DBR的反射光谱向长波长方向移动,速率约0.05 nm/℃,其中由线热膨胀系数带来的影响小于0.001 nm/℃.当传统DBR的周期数增大时,温度对DBR光谱反射率的影响在减小,同时DBR的反射谱峰值波长发生红移.为了降低温度对DBR反射光谱的影响,提出一种新型的复式DBR结构.分析指出：该复式DBR比传统DBR有更大的反射光谱半峰宽,基本能覆盖同温度的AlGaInP LED电致发光光谱,这对提高LED的出光效率有现实意义.     

大功率垂直腔面发射激光器中减小p-DBR串联电阻的途径

为了使垂直腔面发射激光器(VCSEL)实现大功率、高效率的激光输出,对p型分布布喇格反射镜(DBR)形成的同型异质结在界面处存在大势垒导致的高串联电阻和严重发热现象进行了研究。为降低串联电阻,实现VCSEL在室温下的大功率连续发射,分析了p型DBR异质结的势垒结构,对突变异质结的串联电阻进行了计算分析,提出降低势垒高度以及增加扩散浓度是减小串联电阻的主要途径,而漏斗状的掺杂能有效降低体电阻;通过对梯度渐变异质结的分析得出缓变结能有效降低势垒高度;而用Matlab对能带图的数值分析表明,Al_0.1Ga_0.9As/AlAs接触层中Al组分采取双曲线形式的渐变也能有效降低势垒高度,即降低串联电阻;此外,对于渐变区缓变结的比较表明,采用20~25 nm的渐变区宽度即可以得到比较低的势垒高度,同时也不会对DBR的反射率有太大的影响,是较合适的选择。     

分布布喇格反射镜的反射特性

采用等效法布里珀罗(FP)腔方法对分布布喇格反射镜(DBR)的特性进行了研究,计算并讨论了上下两层DBR结构非对称模型反射率的变化.设计了DBR反射镜的反射谱中心波长为850nm的结构.随着DBR周期数的增加,腔反射率峰值逐渐增加.上下两层DBR反射镜的厚度由反射率和中心波长决定.实验表明,下DBR的周期数为30对左右,上DBR的周期数为20对左右,易实现激光输出.非对称的双层DBR的反射特性表明理论计算与实验结果基本一致.     

基于共振腔发光二极管的DBR温度特性研究

分布式布拉格反射镜（DBR）是共振腔发光二极管（RCLED）的主要组成部分,其温度特性对RCLED的性能有着重要影响。基于650 nm红光RCLED,设计出由Al0.5Ga0.5As和Al0.95Ga0.05As组成的DBR结构。首先通过AlxGa1-xAs材料折射率的色散关系分析温度对AlxGa1-xAs材料折射率的影响,进而模拟了DBR反射谱的温度特性,得到随着温度升高DBR反射谱红移的结论,温漂速率为0.048982 nm/℃。通过MOCVD制备出30对Al0.5Ga0.5As和Al0.95Ga0.05As组成的DBR外延结构,并对其进行反射谱测试,发现随着温度升高反射谱出现了红移现象,温漂速率为0.049277 nm/℃,与模拟结果相近,验证了温度升高导致反射谱红移结论的正确性。     

用拉曼光谱测量离子注入引起的晶格应变

 对于10个周期的AlAs/GaAs超晶格和25个周期的GaAs/Ga0.92In0.08As超晶格,在室温下进行0.28 MeV的Zn＋注入,注入剂量为5×10¹³~5×10¹⁴ cm^-2。通过拉曼光谱测量,定量地分析了由于离子注入所引起的晶格内应变。实验结果表明：在所选用的注入剂量下,由于离子注入引起的应变小于体材料GaAs的最大非驰豫应变值0.038,说明该注入条件下,注入区的结晶态仍然保持得比较好。在较高注入剂量下应变达到饱和,说明缺陷的产生和复合达到了平衡,从而形成了均衡的应变场分布。     

Cu/Ti超晶格薄膜的强紫外反射性能研究

采用直流磁控溅射方法制备了一维二组元Cu/Ti周期超晶格金属薄膜 ,研究了基片温度、膜周期数、基片取向与紫外反射的关系。当基片加热温度为 470℃时 ,在硅 (10 0 )晶面上生长的 30层Cu/Ti膜 ,层间膜厚控制在1∶3、膜总厚度控制为 30 0nm时 ,所制备的超晶格薄膜在 5°入射角下对 2 0 0nm的紫外光 ,其反射率可高达 90 %。     

GaAs/AlAs超晶格的近共振喇曼散射研究

本文介绍GaAs/AlAs超晶格的室温近共振喇曼散射测量结果。由于超晶格中Fr?hlich相互作用的共振增强效应,GaAs LO声子偶模的散射得到了很大的增强。和前人的结果一样,在偏振谱我们观察到了偶模。但和前人的结果不同,在退偏振谱中我们观察到的是奇模,而不是偶模。从而证明了在近共振条件下LO声子限制模仍遵从与非共振时一样的选择定则。二级喇曼散射实验结果表明,在偏振谱中二级谱是由两个偶模组合而成,而在退偏振谱中的二级谱与前人的结果不同,由一个奇模与一个偶模组合而成。上述结果与最近提出的黄朱模型的预言是一 关键词：     

GaAs/AlGaAs Fibonacci准周期超晶格带间跃迁的光谱研究

运用光致荧光,光调制反射和光电流谱等方法研究了11级的GaAs/AlGaASFibonacci准周期超晶格的带间跃迁,并用转移矩阵方法计算了Fibonacci准周期超晶格和相应的周期性超晶格的子能级和子能带.理论计算与实验结果符合得很好. 关键词：     

垂直腔面发射激光器的结构生长及特性研究

在偏〈111〉A 2°的GaAs (100) 衬底上生长了Al0.9Ga0.1As /Al0.2Ga0.8As周期结构的垂直腔面发射激光器（VCSEL）外延片P 型DBR的周期数为24.5对,N型DBR的周期数为34.5对.用光荧光 (PL) 谱、扫描电子显微镜 (SEM)和X射线双晶衍射 (XRD) 方法对VCSEL的光学特性和结构特性进行了分析室温量子阱材料的PL谱峰值波长为837.0 nm,半高宽达到28.9 nm在X射线双晶衍射回摆曲线中,除了“0”级衍射峰外,还观察到一级和二级卫星峰.“0”级双晶衍射峰的半高宽为12.56弧秒(″),衬底GaAs的衍射峰半高宽为11.79″.“0”级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近,表明晶格具有很高的完整性.实验结果表明腔模波长为837.2 nm,腔模波长与PL谱峰值波长相匹配.     

Speckle characteristics of a broad-area VCSEL in the incoherent emission regime

We present a technique to reduce the speckle contrast of a NIR broad-area VCSEL based on the spatially incoherent emission regime that can be obtained when using the proper driving conditions. We evaluate the efficiency of this technique to reduce the speckle contrast by comparing it with the speckle characteristics in multimode emission under cw operation. Depending on the illumination setup, the incoherent emission regime can lead to a strongly reduced speckle contrast down to 1.3%. This is in agreement with estimates of the expected speckle contrast reduction when three contrast reducing effects are taken into account. These low contrast values make the investigated sources attractive for several applications that suffer from speckle noise.     

XYZ particles at Belle

In this paper, I review recent progress in the study of the XYZ particles at Belle. I only focus on studies with charmonium and one or more light mesons in the final states. This covers the X(3872), X(3915),Y(4140), X(4350), and the charged Z states.     

Beyond the LAN: Ethernet’s Evolution into the Public Network

This article details the evolution of Ethernet into Gigabit Ethernet and how this LAN-based technology has undergone major transformations over time. From its data rates and distances to supported media and functionality, Ethernet has greatly improved, enabling it to surmount many of its former limitations and in so doing to expand beyond the LAN into the MAN and now even the WAN. In this article, Pioneer Consulting explores the evolution further by focusing on some of the major technological directions in the Ethernet equipment industry.     

Effect of swift heavy ion irradiation on photoluminescence properties of ZnO/PMMA nanocomposite films

We report a study on the SHI induced modifications on structural and optical properties of ZnO/PMMA nanocomposite films. The ZnO nanoparticles were synthesized by the chemical route using 2-mercaptoethanol as a capping agent. The structure of ZnO nanoparticles was confirmed by XRD, SEM and TEM. These ZnO nanoparticles were dispersed in the PMMA matrix to form ZnO/PMMA nanocomposite films by the solution cast method. These ZnO/PMMA nanocomposite films were then irradiated by swift heavy ion irradiation (Ni⁸⁺ ion beam, 100 MeV) at a fluence of 1×10¹¹ ions/cm². The nanocomposite films were then characterized by XRD, UV-vis absorption spectroscopy and photoluminescence spectroscopy. As revealed from the absorption spectra, absorption edge is not changed by the irradiation but the optical absorption is increased. Enhanced green luminescence at about 527 nm and a less intense blue emission peak around 460 nm were observed after irradiation with respect to the pristine ZnO/PMMA nanocomposite film.     

Optical transmission through an interface between subwavelength slits

This paper studies optical transmission through an interface between two slits with different widths in a sheet composed of an ideal conductor. Such a structure is of potential use in fabricating optical diode and may be the simplest one compared to other designs. Our calculations show that there is a critical wavelength. When the light wavelength is below the critical wavelength, the transmissivity is unidirectional. The expression of the stable transmissivity as a function of the ratio of the widths of the two slits was obtained analytically. Particularly, at the critical wavelength, the transmissivities are zero. This phenomenon has great potential for application in the manufacture of wavelength blockers.     

带有碳杂质的钨中氢稳定性的第一性原理研究

应用第一性原理计算方法研究了碳(C)原子对钨(W)中氢(H)原子稳定性的影响. 本征W中, 当C-H间距离为～2.5 Å时, H的溶解能出现最低值, 此时为H最稳定的位置. W中存在空位时, 由于C的影响, H占据的最佳电子密度面值为0.10 Å^-3. 研究发现, W中单空位最多能容纳10个H原子, 且不能形成H分子, 不同于没有C存在的情况, 表明C对W中H稳定性存在很大影响. 此外, 当两个C原子存在于空位中时, H占据的最佳电子密度面值变为0.13 Å^-3.     

Grain boundary potential and charge density at grain boundaries of chemically prepared thin silver sulfide films

The grain boundary potential and interface state charge density at the grain boundaries of silver sulfide (Ag₂S) thin films prepared by chemical conversion of cadmium sulfide (CdS) films have been determined from the dc resistance of the material and are found to be sensitive to annealing. A reduction in the grain boundary potential and the grain boundary charge density of the film has been noticed when the source CdS film is annealed at different temperatures prior to chemical conversion. The variation in the grain boundary charge density of the grown Ag₂S film with source annealing temperature has been found to be similar to that of thin cadmium sulfide film, reported earlier. An additional low temperature heat treatment of the sample results in an enhancement in the charge density at the grain boundaries. The change in the silver vacancy and/or oxygen and sulfur content of the films as revealed from the energy dispersive spectra of the films suggests possible role of film composition on the grain boundary charge density.     

Reflections from polished single mode fiber ends

Abstract

The performance of a wavelength division multiplexing (WDM) system with optical cross-connects (OXCs) and in the presence of polarization and nonlinear effects was analyzed. We determined the effect of PMD and PDL; nonlinearity such as XPM, SPM, and FWM; and CD on the system performance. We found that the system outage probability is highest at DGD threshold for the respective maximum eye closure (EC). We showed that the allowable DGD depends on the time slot for one bit T, which is the inverse of the network bit rate. Wider T is more immune to large PMD with the EC still maintained at the same level since DGD/T is unchanged. Our analysis also indicated that as DGD increases, BER increases. The BER also increases with increase in PDL and further increases with the presence of XPM, SPM, FWM, and CD.     

The Effects of Polarization and Non-Linearity on the Performance of WDM System with Optical Cross-Connects

The performance of a wavelength division multiplexing (WDM) system with optical cross-connects (OXCs) and in the presence of polarization and nonlinear effects was analyzed. We determined the effect of PMD and PDL; nonlinearity such as XPM, SPM, and FWM; and CD on the system performance. We found that the system outage probability is highest at DGD threshold for the respective maximum eye closure (EC). We showed that the allowable DGD depends on the time slot for one bit T, which is the inverse of the network bit rate. Wider T is more immune to large PMD with the EC still maintained at the same level since DGD/T is unchanged. Our analysis also indicated that as DGD increases, BER increases. The BER also increases with increase in PDL and further increases with the presence of XPM, SPM, FWM, and CD.     

Radial excitation states of η and η′ in the chiral quark model

A chiral quark model is applied to calculate the spectra of pseudoscalar mesons η and η . By analyzing the obtained spectra, we find that the mesons η (2 1 S 0 ), η(4 1 S 0 ), η (3 1 S 0 ) and η (4 1 S 0 ) are the possible candidates of η(1760), X(1835), X(2120) and X(2370). The strong decay widths of these pseudoscalars to all the possible two-body decay channels are calculated within the framework of the 3 P 0 model. Although the total width of η (21S0 ) is compatible with the BES Collaboration’s experimental value for η(1760), the partial decay width to ωω is too small, which is not consistent with the BES result. If X(1835) is interpreted as η(4 1 S 0 ), the total decay width is compatible with the experimental data, and the main decay modes will be πa 0 (980) and πa 0 (1450), which needs to be checked experimentally. The assignment of X(2120) and X(2370) to η (31S0 ) and η (41S0 ) is disfavored in the present calculation because of the incompatibility of the decay widths.