Chemischer Transport fester Lösungen. 11 [1] Mischphasen und Chemischer Transport in den Systemen CrIII/InIII/GeIV/O,GaIII/InIII/GeIV/O,MnIII/InIII/GeIV/O und FeIII/InIII/GeIV/O

Chemical Vapor Transport of Solid Solutions. 11 Mixed Phases and Chemical Vapor Transport in the Systems Cr^III/In^III/Ge^IV/O, Ga^III/In^III/Ge^IV/O, Mn^III/In^III/Ge^IV/O und Fe^III/In^III/Ge^IV/O By means of chemical vapor transport methods the following mixed phases have been prepared: Cr_{0, 18}In_{1, 82}Ge₂O₇ (Cl₂, 950 → 850 °C), (Ga_{0, 6}In_{1, 4})₂Ge₂O₇ (Thortveitit‐type, Cl₂, 1050 → 950 °C), (Ga_{1, 9}In_{0, 1})₂Ge₂O₇ (Ga₂Ge₂O₇‐type, 1050 → 950 °C), (In_{1, 9}Mn_{0, 1})₂Ge₂O₇ (Thortveiti‐type, Cl₂, 1000 → 800 °C), mixed phase crystallizing in the Mn₂Ge₂O₇‐structure showing a composition near MnInGe₂O₇ (Cl₂, 1000 → 800 °C), Mn_{6, 5}In_{0, 5}GeO₁₂ (Braunit‐type, Cl₂, 1000 → 800 °C), (Fe_xIn_1‐x)Ge₂O₇ (Thortveitit‐type with x = 0…0, 94; Cl₂, 840 → 780 °C). Changing the compositions of the starting materials showed no effect on the composition of the deposit except for the system Fe₂O₃‐In₂O₃‐GeO₂.     

Structure and Magnetic Properties of Ce3Ge0.66In4.34 and Ce11Ge4.74In5.26

New indides Ce₃Ge_0.66In_4.34 and Ce₁₁Ge_4.74In_5.26 were synthesized from the elements by arc‐melting and subsequent annealing at 870 K. Single crystals were grown through special annealing procedures in sealed tantalum tubes in a high‐frequency furnace. Both compounds were investigated on the basis of X‐ray powder and single crystal data: I4/mcm, La₃GeIn₄ type, a = 848.8(1), c = 1192.0(2) pm, Z = 4, wR2 = 0.0453, 499 F² values, 17 variables for Ce₃Ge_0.66In_4.34 and I4/mmm, Sm₁₁Ge₄In₆ type (ordered version of the Ho₁₁Ge₁₀ type), a = 1199.3(2), c = 1662.0(3) pm, wR2 = 0.0507, 1217 F² values, 41 variables for Ce₁₁Ge_4.74In_5.26. The Ce₃Ge_0.66In_4.34 structure shows a mixed Ge/In occupancy on the 4c Wyckoff position. This site is octahedrally coordinated by cerium atoms. These octahedra share all edges, leading to a three‐dimensional network. The latter is penetrated by a two‐dimensional indium substructure which consists of flattened tetrahedra at In–In distances of 291 and 300 pm. The Ce₁₁Ge_4.74In_5.26 structure contains three crystallographically independent germanium sites. The latter are coordinated by eight or nine cerium neighbors. These CN8 and CN9 polyhedra are condensed to a complex network which is penetrated by a three‐dimensional indium network with In–In distances of 301–314 pm. The 16m site shows a mixed In/Ge occupancy. Chemical bonding in both compounds is dominated by the p elements. Both ternaries studied exhibit localized magnetism due to the presence of Ce³⁺ ions. The compound Ce₃GeIn₄ remains paramagnetic down to 1.72 K, whereas Ce₁₁Ge₄In₆ orders ferromagnetically at T_C = 7.5 K.     

Ge Pairs and Sb Ribbons in Rare‐Earth Germanium Antimonides RE12Ge7−xSb21 (RE=La–Pr)

The ternary rare‐earth germanium antimonides RE₁₂Ge_7?xSb₂₁ (RE=La–Pr; x=0.4–0.5) are synthesized by direct reactions of the elements. Single‐crystal X‐ray diffraction studies indicate that they adopt a new structure type (space group Immm, Z=2, a=4.3165(4)–4.2578(2) Å, b=15.2050(12)–14.9777(7) Å, c=34.443(3)–33.9376(16) Å in the progression from RE=La to Pr), integrating complex features found in RE₆Ge_5?xSb_11+x and RE₁₂Ga₄Sb₂₃. A three‐dimensional polyanionic framework, consisting of Ge pairs and Sb ribbons, outlines large channels occupied by columns of face‐sharing RE₆ trigonal prisms. These trigonal prisms are centered by additional Ge and Sb atoms to form GeSb₃ trigonal‐planar units. A bonding analysis attempted through a Zintl–Klemm approach suggests that full electron transfer from the RE atoms to the anionic substructure cannot be assumed. This is confirmed by band‐structure calculations, which also reveal the importance of Ge? Sb and Sb? Sb bonding. Magnetic measurements on Ce₁₂Ge_6.5Sb₂₁ indicate antiferromagnetic coupling but no long‐range ordering down to 2 K.     

Neue Germanide mit geordneter Ce3Pt4Ge6‐Struktur – Die Verbindungen Ln3Pt4Ge6 (Ln: Pr–Dy)

New Germanides with an Ordered Variant of the Ce₃Pt₄Ge₆ Type of Structure – The Compounds Ln₃Pt₄Ge₆ (Ln: Pr–Dy) Six new germanides Ln₃Pt₄Ge₆ with Ln = Pr–Dy were synthesized by heating mixtures of the elements at 900 °C, annealing the inhomogeneous powders at 1050‐1100 °C for six days and then cooling down from 700 °C in the course of two months. The crystal structures of Pr₃Pt₄Ge₆ (a = 26.131(5), b = 4.399(1), c = 8.820(2) Å), Sm₃Pt₄Ge₆ (a = 25.974(3), b = 4.356(1), c = 8.748(1) Å), and Dy₃Pt₄Ge₆ (a = 26.079(5), b = 4.311(1), c = 8.729(2) Å) were determined by single crystal X‐ray methods. The compounds are isotypic (Pnma, Z = 4) and crystallize with an ordered variant of the Ce₃Pt₄Ge₆ type of structure (Cmcm, Z = 2) consisting of CaBe₂Ge₂‐ and YIrGe₂‐analogous units. The platinum atoms are located in distorted square pyramids of germanium atoms and build up with them a three‐dimensional network. The coordination polyhedra of the platinum and germanium atoms around the rare‐earth metal atoms are pentagonal and hexagonal prisms. These are completed by some additional atoms resulting in coordination numbers of 14 and 15 respectively. The other germanides were investigated by powder methods resulting in the following lattice constants: a = 26.067(6), b = 4.388(1), c = 8.800(2) Å for Ln = Nd; a = 25.955(7), b = 4.337(1), c = 8.728(2) Å for Ln = Gd; a = 25.944(5), b = 4.322(1), c = 8.698(2) Å for Ln = Tb. The atomic arrangement of Ln₃Pt₄Ge₆ is compared with the well‐known monoclinic structure of Y₃Pt₄Ge₆.     

ChemInform Abstract: The Crystal and Electronic Structures of the Li2‐xAg1+xIn3 (x = 0.05) Indide.

Li_1.95Ag_1.05In₃ is prepared from the elements (Ta crucible, 1100 °C for 15 min followed by annealing at 150 °C for 1 month) and characterized by single crystal XRD and TB‐LMTO‐ASA computations.     

In1.06Ho0.94Ge2O7: a thortveitite‐type compound

A new indium holmium digermanate, In_1.06Ho_0.94Ge₂O₇, with a thortveitite‐type structure, has been prepared as a polycrystalline powder material by high‐temperature solid‐state reaction. This new compound crystallizes in the monoclinic system (space group C2/c, No. 15). The structure was characterized by Rietveld refinement of powder laboratory X‐ray diffraction data. The In³⁺ and Ho³⁺ cations occupy the same octahedral site, forming a hexagonal arrangement on the ab plane. In their turn, the hexagonal arrangements of (In/Ho)O₆ octahedral layers are held together by sheets of isolated diortho groups comprised of double tetrahedra sharing a common vertex. In this compound, the Ge₂O₇ diortho groups lose the ideal D_3d point symmetry and also the C_2h point symmetry present in the thortveitite diortho groups. The Ge—O—Ge angle bridging the diortho groups is 160.2 (3)°, compared with 180.0° for Si—O—Si in thortveitite (Sc₂Si₂O₇). The characteristic mirror plane in the thortveitite space group (C2/m, No. 12) is not present in this new thortveitite‐type compound and the diortho groups lose the C_2h point symmetry, reducing to C₂.     

Quaternary Germanides Formed in Molten Aluminum: Tb2NiAl4Ge2 and Ce2NiAl6‐xGe4‐y (x ∼ 0.24, y ∼ 1.34)

The intermetallic phases Tb₂NiAl₄Ge₂ and Ce₂NiAl_6‐xGe_4‐y (x ∼ 0.24, y ∼ 1.34) were synthesized in molten Al at temperatures below 1000 °C. Both compounds adopt the tetragonal space group I4/mmm with cell parameters of a= 4.1346(2) Å c = 19.3437(7) Å for Tb₂NiAl₄Ge₂ and a= 4.1951(9) Å and c = 26.524(7) Å for Ce₂NiAl_6‐xGe_4‐y. The Tb₂NiAl₄Ge₂ structure features NiAl₄Ge₂ layers separated by a double layer of rare earth ions. The Ce₂NiAl_6‐xGe_4‐y (x ∼ 0.24, y ∼ 1.34) structure also contains the NiAl₄Ge₂ layers along with a vacancy defect PbO‐type Al_2‐xGe_2‐y layer, and is related to the Ce₂NiGa₁₀ structure type. Ordering of vacancies cause the formation of a 3ax3b superstructure in the crystal as seen by electron diffraction experiments. Tb₂NiAl₄Ge₂ exhibits Curie‐Weiss paramagnetic behavior with an antiferromagnetic transition observed at ∼20 K. Ce₂NiAl_6‐xGe_4‐y shows a much more complex magnetic behavior possibly due to temperature induced variation in the valency of the Ce atoms.     

Ternary Indides RE4Pd10In21 (RE = La,Ce, Pr,Nd, Sm) — Synthesis,Structure, and Physical Properties

The ternary indium compounds RE₄Pd₁₀In₂₁ (RE = La, Ce, Pr, Nd, Sm) were synthesized from the elements in glassy carbon crucibles in a high‐frequency furnace. Single crystals of Sm₄Pd₁₀In₂₁ were obtained from an indium flux. An arc‐melted precursor alloy of the starting composition ～SmPd₃In₆ was annealed with a slight excess of indium at 1200 K followed by slow cooling (5 K/h) to 870 K. All compounds were investigated by X‐ray powder diffraction and the structures were refined from single crystal diffractometer data. The RE₄Pd₁₀In₂₁ indides are isotypic with Ho₄Ni₁₀Ga₂₁, space group C2/m: a = 2314.3(2), b = 454.70(7), c = 1940.7(2) pm, β = 133.43(2)°, wR2 = 0.0681, 1678 F² values for La₄Pd₁₀In₂₁, a = 2308.2(1), b = 452.52(4), c = 1944.80(9) pm, β = 133.40(1)°, wR2 = 0.0659, 1684 F² values for Ce₄Pd₁₀In₂₁, a = 2303.8(2), b = 450.78(4), c = 1940.6(1) pm, β = 133.39(1)°, wR2 = 0.0513, 1648 F² values for Pr₄Pd₁₀In₂₁, a = 2300.2(2), b = 449.75(6), c = 1937.8(2) pm, β = 133.32(1)°, wR2 = 0.1086, 1506 F² values for Nd₄Pd₁₀In₂₁, and a = 2295.6(2), b = 447.07(4), c = 1935.7(1) pm, β = 133.16(1)°, wR2 = 0.2291, 2350 F² values for Sm₄Pd₁₀In₂₁, with 108 variables per refinement. All palladium atoms have a trigonal prismatic coordination. The strongest bonding interactions occur for the Pd—In and In—In contacts. The structures are composed of covalently bonded three‐dimensional [Pd₁₀In₂₁] networks in which the rare earth metal atoms fill distorted pentagonal channels. The crystal chemistry and chemical bonding in these indides is briefly discussed. Magnetic susceptibility measurements show diamagnetism for La₄Pd₁₀In₂₁ and Curie‐Weiss paramagnetism for Ce₄Pd₁₀In₂₁, Pr₄Pd₁₀In₂₁, and Nd₄Pd₁₀In₂₁. The neodymium compound orders antiferromagnetically at T_N = 4.5(2) K and undergoes a metamagnetic transition at a critical field of 1.5(2) T. All the RE₄Pd₁₀In₂₁ indides studied are metallic conductors.     

Sr5Ge2N6 – A Nitridogermanate with Edge‐sharing Double Tetrahedra

The new nitridogermanate Sr₅Ge₂N₆ was obtained as a coarsely crystalline product by Na‐flux technique employing a reaction of Sr, Na, NaN₃ and GeO₂ in weld shut tantalum‐tubes at temperatures up to 760 °C. The crystal structure was determined by single‐crystal X‐ray methods: (Sr₅Ge₂N₆, space group C2/c (no. 15), a = 1040.8(2), b = 652.08(13), c = 1356.5(3) pm, β = 100.29(3)°, V = 905.8(3)·10⁶ pm³, Z = 4, 1240 observed reflections, 61 parameters, R1 = 0.031). In the solid, there are edge‐sharing [Ge₂N₆]¹⁰⁻ double tetrahedra surrounded by Sr²⁺ ions. Sr₅Ge₂N₆ was found to be isotypic with Ca₅Si₂N₆.     

Na12Ge17: A Compound with the Zintl Anions [Ge4]4— and [Ge9]4— — Synthesis,Crystal Structure,and Raman Spectrum

Na₁₂Ge₁₇ is prepared from the elements at 1025 K in sealed niobium ampoules. The crystal structure reinvestigation reveals a doubling of the unit cell (space group:P2₁/c; a = 22.117(3)Å, b = 12.803(3)Å, c = 41.557(6)Å, β = 91.31(2)°, Z = 16; Pearson code: mP464), furthermore, weak superstructure reflections indicate an even larger C‐centred monoclinic cell. The characteristic structural units are the isolated cluster anions [Ge₉]^4— and [Ge₄]^4— in ratio 1:2, respectively. The crystal structure represents a hierarchical cluster replacement structure of the hexagonal Laves phase MgZn₂ in which the Mg and Zn atoms are replaced by the Ge₉ and Ge₄ units, respectively. The Raman spectrum of Na₁₂Ge₁₇ exhibits the characteristic breathing modes of the constituent cluster anions at ν = 274 cm^—1 ([Ge₉]^4—) and ν = 222 cm^—1 ([Ge₄]^4—) which may be used for identification of these clusters in solid phases and in solutions. Raman spectra further prove that Na₁₂Ge₁₇ is partial soluble both in ethylenediamine and liquid ammonia. The solution and the solid extract contain solely [Ge₉]^4—. The remaining insoluble residue is Na₄Ge₄. By heating the solvate Na₄Ge₉(NH₃)_n releases NH₃ and decomposes irreversibly at 742 K, yielding Na₁₂Ge₁₇ and Ge.     

LaPt2Ge2 und EuPt2Ge2 – Neubestimmung der Kristallstrukturen

LaPt₂Ge₂ and EuPt₂Ge₂ – Revision of the Crystal Structures LaPt₂Ge₂ was rechecked by single crystal X‐ray methods resulting in space group P2₁/c (in place of P2₁) and the lattice constants a = 9.953(3), b = 4.439(1), c = 8.879Å, β = 90.62(4)°, and Z = 4. In contrast to previous reports the cell volume had to be doubled. The same is true for EuPt₂Ge₂ (a = 9.731(1), b = 4.446(1), c = 8.823(1) Å, β = 91.26(1)°). The crystal structures correspond to a monoclinic variant of the tetragonal CaBe₂Ge₂ type, whereas the distortion can be described as different rotations of the coordination polyhedra around the La and Eu atoms, respectively. It is most likely that the compounds APt₂Ge₂ with A = Ca, Y, La‐Dy undergo phase transitions at higher temperatures forming then the undistorted CaBe₂Ge₂ type, space group P4/nmm. This was confirmed for SmPt₂Ge₂ (a = 4.292(1), c = 9.980(1) Å; Z = 2) and might also be the case for APt₂Ge₂ with A = Ca, Nd, Sm, Eu, and Gd.     

New Rare‐Earth Metal Germanides RE2Ge9 (RE = Nd,Sm) by Thermal Decomposition of High‐Pressure Phases REGe5

The rare‐earth metal germanides RE₂Ge₉ (RE = Nd, Sm) have been prepared by thermal decomposition of the metastable high‐pressure phases REGe₅ at ambient pressure. The compounds adopt an orthorhombic unit cell with a = 396.34(4) pm; b = 954.05(8) pm and c = 1238.4(1) pm for Nd₂Ge₉ and a = 395.46(7) pm; b = 946.4(2) pm and c = 1232.1(3) pm for Sm₂Ge₉. Crystal structure refinements reveal space group Pmmn (No. 59) for Nd₂Ge₉. The atomic pattern resembles an ordered defect variety of the pentagermanide motif REGe₅ (RE = La; Nd, Sm, Gd, Tb) comprising corrugated germanium layers. These condense into a three‐dimensional network interconnected by eight‐coordinated germanium atoms. The resulting framework channels along [100] enclose the neodymium atoms. With respect to the atomic arrangement of the pentagermanides, half of the interlayer germanium atoms are eliminated in an ordered way so that occupied and empty germanium columns alternate along [001]. The rare‐earth metal atoms of both types of compounds, REGe₅ and RE₂Ge₉, exhibit the electronic states 4f ³ and 4f ⁵ (oxidation state +3) for neodymium and samarium, respectively, evidencing that the modification of the germanium network leaves the electron configuration of the metal atoms unaffected.     

Oxidative Coupling of Ge94‐ Zintl Anions ‐ Hexagonal Rod Packing of Linear [Ge9=Ge9=Ge9=Ge9]8‐

The compound [K(18‐crown‐6)]₈[Ge₉=Ge₉=Ge₉=Ge₉] ˙ 8en ( 1 ) featuring a [Ge₉=Ge₉=Ge₉=Ge₉]^8‐cluster anion was synthesized from K₄Ge₉ for the first time. The X‐ray single crystal analysis shows that, in many respects such as bond connection and packing style, compound 1 is quite different from the previously reported compounds [Rb(18‐crown‐6)]₈[Ge₉=Ge₉=Ge₉=Ge₉] ˙ 2en ( 2 ) and [Rb(18‐crown‐6)]₈[Ge₉=Ge₉=Ge₉=Ge₉] ˙ 6en ( 3 ). Crystal packing of 1 gives strong indications that the highly charged nano‐rods self assembly in a hexagonal rod packing.     

Syntheses and Structures of RE4Pt10In21 (RE = La–Nd)

The isotypic indides RE₄Pt₁₀In₂₁ (RE = La, Ce, Pr, Nd) were prepared by melting mixtures of the elements in an arc‐furnace under an argon atmosphere. Single crystals were synthesized in tantalum ampoules using special temperature modes. The four samples were studied by powder and single crystal X‐ray diffraction: Ho₄Ni₁₀Ga₂₁ type, C2/m, a = 2305.8(2), b = 451.27(4), c = 1944.9(2) pm, β = 133.18(7)°, wR2 = 0.045, 2817 F² values, 107 variables for La₄Pt₁₀In₂₁, a = 2301.0(2), b = 448.76(4), c = 1941.6(2) pm, β = 133.050(8)°, wR2 = 0.056, 3099 F² values, 107 variables for Ce₄Pt₁₀In₂₁, a = 2297.4(2), b = 447.4(4), c = 1939.7(2) pm, β = 132.95(1)°, wR2 = 0.059, 3107 F² values, 107 variables for Pr₄Pt₁₀In₂₁, and a = 2294.7(4), b = 446.1(1), c = 1938.7(3) pm, β = 132.883(9)°, wR2 = 0.067, 2775 F² values, 107 variables for Nd₄Pt₁₀In₂₁. The 8j In2 positions of all structures have been refined with a split model. The In1 sites of the lanthanum and the cerium compound show small defects, leading to the refined composition La₄Pt₁₀In_20.966(6) and Ce₄Pt₁₀In_20.909(6) for the investigated crystals. The same position shows Pt/In mixing in the praseodymium and neodymium compound leading to the refined compositions Pr₄Pt_10.084(9)In_20.916(9) and Nd₄Pt_10.050(9)In_20.950(9). All platinum atoms have a tricapped trigonal prismatic coordination by rare‐earth metal and indium atoms. The shortest interatomic distances occur for Pt–In followed by In–In. Together, the platinum and indium atoms build up three‐dimensional [Pt₁₀In₂₁] networks in which the rare earth atoms fill distorted pentagonal tubes. The crystal chemistry of RE₄Pt₁₀In₂₁ is discussed and compared with the RE₄Pd₁₀In₂₁ indides and isotypic gallides.     

Compound formation in the System PbGeO3?Pb5Ge3O11

Compound formation in the system PbGeO₃? Pb₅Ge₃O₁₁ was studied by thermal analysis and high-temperature X-ray diffraction. New modifications of PbGeO₃ and Pb₅Ge₃O₁₁ were prepared by the simultaneous hydrolysis of lead and germanium alkoxides, followed by washing and drying; the former has a hexagonal unit cell with a = 15.573 Å and c = 7.240 Å, and the latter has an orthorhombic crystal structure with a = 5.081 Å, b = 7.301 Å and c = 8.817 Å. They are transformed to the known monoclinic and hexagonal modifications at 575 to 610°C and 410 to 450°C, respectively. No compound of Pb₃Ge₂O₇ was confirmed. The structures of germanate groups in the lead germanate compounds are discussed on the basis of the infrared spectral data.     

[Ge4O6Te4]4—, an Adamantanoid Oxotellurido Germanate(IV) with a Central Ge4O6 Core

[Mn(en)₃]₂[Ge₄O₆Te₄]·1.5en ( 1 ) and (enH)₃[Mn(en)₃]₃[Ge₄O₆Te₄]₂I·4.7en ( 2 ) may be prepared at 150 °C by solvothermal reaction of elemental Ge and Te with Mn(OOCCH₃)₂ ·4H₂O in the presence of [CH₃)₄N]I as a mineralizer in respectively superheated ethylenediamine (en) or an en/CH₃OH (3:2) mixture. Both contain the novel [Ge₄O₆Te₄]^4— anion with a central adamantanoid Ge₄O₆ core and four terminal Te atoms and represent the first examples of such a mixed [M₄E₆E₄′]^4— anion (M = Si‐Sn; E = O‐Te). As a result of their increased polarity, the Ge‐Te bonds of 2 are markedly shorter (2.438 — 2.462Å) than those previously reported for telluridogermanates(IV).     

Non‐hydrogenated amorphous germanium carbide with adjustable microstructure and properties: a potential anti‐reflection and protective coating for infrared windows

Amorphous non‐hydrogenated germanium carbide (a‐Ge_1?xC_x) films have been deposited using magnetron co‐sputtering technique by varying the sputtering power of germanium target (P_Ge). The effects of P_Ge on composition and structure of the a‐Ge_1?xC_x films have been analyzed. The FTIR spectrum shows that the C–Ge bonds were formed in the a‐Ge_1?xC_x films according to the absorption peak at ~610 cm^?1. The Raman results indicate that the amorphous films also contain both Ge and C clusters. The XPS results reveal that the carbon concentration decreased as P_Ge increased from 40 to 160 W. The fraction of sp³ C–C bonds remains almost constant when increasing P_Ge from 40 to 160 W. The sp² C–C content of a‐Ge_1?xC_x film decreases gradually to 35.9% with P_Ge up to 160 W. Nevertheless, sp³ C–Ge sites rose with increasing P_Ge. Furthermore, the hardness and the refractive index gradually increased with increasing P_Ge. The excellent optical transmission of annealed a‐Ge_1–xC_x double‐layer coating at 400 °C suggests that a‐Ge_1?xC_x films can be used as an effective anti‐reflection coating for the ZnS IR window in the wavelength region of 8–12 µm, and can endure higher temperature than hydrogenated amorphous germanium carbide do. Copyright © 2012 John Wiley & Sons, Ltd.     

ChemInform Abstract: Li4Ge2B as a New Derivative of the Mo2B5 and Li5Sn2 Structure Types.

Single crystals of Li₄Ge₂B are obtained by solid state reaction of stoichiometric mixtures of the elements (sealed Ta crucible, 1473 K, 15 min; rapid cooling to 25 °C).     

σ‐Aromaticity‐Induced Stabilization of Heterometallic Supertetrahedral Clusters [Zn6Ge16]4− and [Cd6Ge16]4−

In this work, the largest heterometallic supertetrahedral clusters, [Zn₆Ge₁₆]^4? and [Cd₆Ge₁₆]^4?, were directly self‐assembled through highly‐charged [Ge₄]^4? units and transition metal cations, in which 3‐center–2‐electron σ bonding in Ge₂Zn or Ge₂Cd triangles plays a vital role in the stabilization of the whole structure. The cluster structures have an open framework with a large central cavity of diameter 4.6 Å for Zn and 5.0 Å for Cd, respectively. Time‐dependent HRESI‐MS spectra show that the larger clusters grow from smaller components with a single [Ge₄]^4? and ZnMes₂ units. Calculations performed at the DFT level indicate a very large HOMO–LUMO energy gap in [M₆Ge₁₆]^4? (2.22 eV), suggesting high kinetic stability that may offer opportunities in materials science. These observations offer a new strategy for the assembly of heterometallic clusters with high symmetry.     

Functionalization of [Ge9] with Small Silanes:[Ge9(SiR3)3]– (R = iBu,iPr, Et) and the Structures of (CuNHCDipp)[Ge9{Si(iBu)3}3], (K‐18c6)Au[Ge9{Si(iBu)3}3]2, and (K‐18c6)2[Ge9{Si(iBu)3}2]

Novel silylation reactions at [Ge₉] Zintl clusters starting from the chlorosilanes SiR₃Cl (R = iBu, iPr, Et) and the Zintl phase K₄Ge₉ are reported. The formation of the tris‐silylated anions [Ge₉(SiR₃)₃]^– [R = iBu ( 1a ), iPr ( 1b ), Et ( 1c )] by heterogeneous reactions in acetonitrile was monitored by ESI‐MS measurements. For R = iBu ¹H, ¹³C and ²⁹Si NMR experiments confirmed the exclusive formation of 1a . Subsequent reactions of 1a with CuNHC^DippCl and Au(PPh₃)Cl result in formation of the neutral metal complex (CuNHC^Dipp)[Ge₉{Si(iBu)₃}₃]·0.5 tol ( 2 ·0.5 tol) and the metal bridged dimeric unit {Au[Ge₉{Si(iBu)₃}₃]₂}^– ( 3a ), isolated as a (K‐18c6)⁺ salt in (K‐18c6)Au[Ge₉{Si(iBu)₃}₃]₂·tol ( 3 ·tol), respectively. Finally, from a toluene/hexane solution of 1a in presence of 18‐crown‐6, crystals of the compound (K‐18c6)₂[Ge₉{Si(iBu)₃}₂]·tol ( 4 ·tol), containing the bis‐silylated cluster anion [Ge₉(Si(iBu)₃)₂]^2– ( 4a ), were obtained. The compounds 2 ·0.5 tol, 3 ·tol and 4 ·tol were characterized by single‐crystal structure determination.