Deflection of an electron beam with a 1.8-MeV energy incident at glancing angles on a dielectric surface

The first results of investigations into the effect of self-deviation of an electron beam with intermediate energy by a dielectric surface, previously discovered by the authors for the interaction of electrons with a glass surface, are presented in the paper. It is shown that optimizing the deflection process and choosing a dielectric target, angles of beam deflection of the order of 5–8° can be obtained and stabilized during subsequent irradiation of the target, which is especially important for applications of this effect to electron-beam optics. Scientific Research Institute of Nuclear Physics at Tomsk Polytechnic University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 12–17, September, 1999.     

外磁场对介质表面次级电子倍增效应的影响

本文采用Particle-in-cell数值方法模拟研究了不同强度外磁场条件下的次级电子倍增效应过程,分析了外磁场对次级电子倍增效应的影响.结果表明,当外磁场达到一定强度时,次级电子倍增效应在微波传输的一半时间内被抑制.通过外磁场抑制,在理想条件下可以使介质窗的微波传输功率容量提高4倍以上.     

Scattering of an unpolarized Bessel beam by spheres

The scattering process of an unpolarized Bessel beam through spherical scatterers is investigated. We derive the analytical solutions of scattered fields of x-and y-polarized Bessel beams using a sphere, after which the dimensionless scattering function for an unpolarized Bessel beam is obtained. The dimensionless scattering function is applicable to spherical scatterers of any size on the beam axis or near it. Through numerical simulations, we demonstrate that extreme points exist in the direction or neighboring direction of the conical angle for spherical scatterers on the beam axis, whereas the existence of extreme points depends on the ratio between the spherical scatterers size and central spot size of the Bessel beam.     

Excitation of microwave by an annular electron beam in a plasma-filled dielectric lined waveguide

An axial relativistic electron beam passing through a slow wave structure is unstable to an electromagnetic perturbation whose phase velocity equals the velocity of the beam. This phenomenon of Cherenkov emission is the basis of all traveling wave tubes. In this paper an excitation of Cherenkov radiation by a thin annular relativistic electron beam in a plasma-filled dielectric-lined waveguide is analysed by use of the self-consistent linear theory. The effect of the thin annular electron beam on the beam-wave interaction is completely described by a jump condition. The dispersion equation and the simultaneous condition of the beam-wave interaction are derived. Finally, the growth rate of the wave is obtained, and the effect of the background plasma density and the electron beam radius on the growth rate of the wave are presented.This work is supported by National Natural Science Foundation of China.     

Hydrocarbon film formed on the surface of a semiconductor irradiated by an electron beam

The rate of formation of a hydrocarbon film on the surface of a sample subjected to the action of an electron beam is studied at room temperature and in cooling a sample to the liquid nitrogen temperature. The thickness and the optical radiation transmission of such films are measured as functions of the electron beam radiation time, the sample temperature, and the level of vacuum. The film thickness is measured with atomic force microscopy. The absorption of the films is determined by comparing the cathodoluminescence intensities from a pure sample surface and from the surface covered with a film. The experimental results can be used to estimate the film formation rate as a function of the sample temperature and the vacuum and to determine the optical radiation absorption at a wavelength of 300, 360, 550, and 665 nm.     

Determination of the surface potential of a dielectric layer on a target bombarded by an ion beam

The electric field at the surface of a charge spot created by an ion beam on a dielectric coating of a target is calculated. An expression is obtained which relates the surface potential of the insulator to the potential of the collector corresponding to saturation of the collector secondary-electron current. It permits determination of the potential drop across the oxide layer of a cold cathode without introducing complications in the construction of the experimental apparatus. Zh. Tekh. Fiz. 68, 126–128 (September 1998)     

Terahertz surface plasmon excitation over a bismuth thin film by an electron beam

The excitation of terahertz surface plasma wave (SPW) over bismuth thin film-glass structure by a parallel propagating electron beam is studied. The SPW phase velocity is sensitive to the thickness of bismuth film and it is driven via the Cerenkov resonance. The growth rate for terahertz radiation generation by an electron beam is obtained under small signal approximation.     

Raman scattering enhancement by dielectric spheres

Raman scattering experiments were performed on Si(60 nm)/metal/substrate structures with and without silica microspheres (with a diameter between 0.5 and 5 µm) on top. Raman scattering from the thin Si layer exhibits enhancements (~20) due to the dielectric spheres, where the enhancement factors depend on the diameter of the spheres. The interaction between light and dielectric spheres has been simulated by finite difference time domain calculations (FDTD), wherein particularly the electric energy density (ED) distribution in the thin Si layer was of concern. For microspheres with a diameter less than ~3 µm, the transverse ED distribution (perpendicular to the incident light direction) within the Si layer is characterised by a single peak centered on the optical axis. For larger diameters, a multimodal transverse ED distribution develops where the maximum is not centered on the optical axis. Using an ad‐hoc approach for surface enhanced Raman scattering in combination with the FDTD calculations, the experimental Raman observations are well accounted for. Copyright © 2013 John Wiley & Sons, Ltd.     

Tunable terahertz radiation from arbitrary profile dielectric grating coated with graphene excited by an electron beam

In this paper, the enhanced terahertz radiation transformed from surface plasmon polaritons, excited by a uniformly moving electron bunch, in a structure consisting of a monolayer graphene supported on a dielectric grating with arbitrary profile is investigated. The results show that the grating profile has significant influence on the dispersion curves and radiation characteristics including radiation frequency and intensity. The dependence of dispersion and radiation characteristics on the grating shape for both the symmetric and asymmetric gratings is studied in detail. Moreover, we find that, for an asymmetric grating with certain profile, there exist two different diffraction types, and one of the two types can provide higher radiation intensity comparing to the other one. These results will definitely facilitate the practical application in developing a room-temperature, tunable, coherent and miniature terahertz radiation source.     

Polarized light-scattering measurements of dielectric spheres upon a silicon surface

The polarization of light scattered into directions out of the plane of incidence by polystyrene latex spheres upon a silicon substrate was measured for p -polarized incident light. The experimental data show good agreement with theoretical predictions for three sizes of spheres. These results demonstrate that the polarization of light scattered by particles can be used to determine the size of particulate contaminants on silicon wafers. Theoretical models, based on successive degrees of approximation, indicate that the mean distance of a particle from the surface is the primary determinant of the scattered light polarization for small out-of-plane scattering angles.     

两种外磁场形式对介质面次级电子倍增的抑制

利用自编1D3V PIC程序,数值研究了不同外加磁场方式对次级电子倍增抑制的物理过程,给出了次级电子数目、平均能量、密度、运动轨迹、渡越时间、介质表面静电场及沉积功率等物理量时空分布关系。模拟结果表明：不同方向外加磁场抑制次级电子倍增的机理有所不同。轴向外加磁场利用电子回旋运动干扰微波电场对电子加速过程,使其碰壁能量降低以达到抑制二次电子倍增的效果;横向外加磁场利用电子回旋漂移过程中,电子半个周期被推离介质表面（不发生次级电子倍增）,半个周期被推回介质表面（降低电子碰撞能量）的作用机理,达到抑制二次电子倍增的效果。讨论了横向磁场在回旋共振下,电子回旋同步加速导致回旋半径增大,电子能量持续增加的特殊过程。两种外加磁场方式都可以通过增加磁场达到进一步抑制次级电子倍增的目的。轴向外加磁场加载容易,但对磁场要求较高;横向外加磁场需要磁场较低,但加载较为困难。     

Features of surface acoustic wave propagation in lithium niobate damaged by an electron beam

The propagation of surface acoustic waves (SAWs) in a thin-film aluminum waveguide of Δv/v type fabricated on a 128° Y-X LiNbO₃ plate by lift-off lithography and direct writing by a 20-keV electron beamis studied experimentally. The temperature dependence of the phase of the signal passed through an SAW delayline exhibits steps and hysteresis. The line consists of such a waveguide and two interdigital transducers with acenter frequency of 486 MHz and is exposed to a nitrogen flow. The vapors of water-containing analytes introduced into the nitrogen flow cause anomalous phase changes. These changes are of opposite sign and more thanone order of magnitude greater than the phase changes observed under similar conditions in specimens fabricated by optical lithography. It is concluded that these phenomena offer possibilities for designing SAW humidity sensors with a low threshold of sensitivity.     

Backscattering of an intense laser beam by an electron

We present a novel, simple asymptotic expansion for the spectrum of radiation that is backscattered from a laser by a counterpropagating (or copropagating) electron. The solutions are presented in such a way that they explicitly show the relative merit of using an intense laser and of an energetic electron beam in x-ray production in the single particle regime. Simple scaling laws are given.     

Effect of electron drift and emission on the surface potential of an irradiated dielectric

A mathematical model is proposed for the steady-state charging of dielectrics with an open surface under bombardment with a nonpenetrating electron beam. The model is based on inclusion of the emission and drift mechanisms of the leakage of charge injected into the dielectric. Charge transfer through the unirradiated layer of dielectric adjacent to the grounded substrate is assumed to occur in a space-charge-limited current mode. As a result of this the strength in the unirradiated layer is of sufficient strength to make a certain contribution to the surface potential of the dielectric. The steady-state surface potential on the electron-beam parameters and the characteristics of the sample are studied by analyzing the proposed model. We consider the irradiation conditions under which one of the charge-leakage mechanisms dominates.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 5–10, November, 1990.     

Characterization of dielectric spheres by spiral imaging

We study the spiral spectra scattered off transparent dielectric spheres when probed by different Laguerre-Gaussian light beams, carrying nested topological wavefront dislocations. We show that such scattering data may be employed to determine geometrical properties of the spheres, such as their position. The technique is a generalization of standard Mie scattering, and it can be extended to study and to characterize nanospheres.     

Silicon dioxide modification by an electron beam

The overheating temperature of a microvolume of silicon dioxide produced by bombardment by a high specific-power electron beam has been estimated. Calculations showed that the maximum temperature to which a microvolume of silicon dioxide is overheated can be as high as 1200°C for an electron beam current of 100 nA. The variation in the cathodoluminescence characteristics of amorphous silica with different contents of hydroxyl groups was studied for various electron beam specific-power levels. The impact of a high specific-power electron beam was shown to create additional lattice defects up to the formation of silicon clusters.     

Influence of an external magnetic field on the threshold of multipactor onset on a dielectric surface

In this paper, we propose a theoretical model of the initial stage of development of a one-sided secondary-emission (multipactor) discharge on a dielectric surface. Consideration is based on a statistical method supported by an exact analytical solution for the transit-time distribution function of secondary electrons. The general integral equation allowing us to determine the stationary emission-phase distribution functions and the threshold of multiplicator onset in the presence of an external magnetic field is formulated. It is shown that the presence of an external magnetic field can significantly change the conditions of multipactor onset. It is found that the discharge-zone boundaries calculated within the framework of a statistical model are in qualitative agreement with the results obtained by the Monte-Carlo method. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 50, No. 2, pp. 118–133, February 2007.     

Recording of domains by an electron beam on the surface of +Z cuts of lithium niobate

Using an electron beam, spontaneous polarization on the surface of +Z cuts of lithium niobate crystals of various compositions is switched. Domains 100–200 nm in size are formed in a thin surface layer, with the thickness dependent on the primary-electron energy. The sizes of segments, on which submicron domains are formed, exceed the sizes of the irradiation region. The distributions of domains on the surface in crystals of various compositions are different and depend on the method of moving the electron beam and irradiation conditions. The results are discussed in the context of notions on the charging of dielectric materials by the electron beam. It is assumed that the spontaneous polarization in the surface layer of +Z cuts of lithium niobates is switched by the field of a double layer of charges formed as a result of the charging process near the surface.