On ballistic transport in carbon nanotubes

We investigate theoretically the ballistic regime exhibited by conduction electrons in multiwalled carbon nanotubes in relation to the conductance quantization in these tubes. Starting from the fact that electron drift mobility is quantized in multiwall tubes, essential aspects related to both ballistic and diffusive regimes are discussed.     

Direct observation of spin dependent electronic structure of GaAs using spin polarized photoemission

The spectrum of spin plarization P(hv) of electrons photoemitted from negative electron affinity GaAs using circularly polarized light, 1.5 eV < hv < 3.6 eV, was measured by Mott scattering; it exhibits structure derived from the spin orbit split energy bands near Γ and L.     

多壁碳纳米管中的多通道弹道输运特性

借助于扫描电子显微镜中可移动金属探针的测量系统,实现了探针电极与W衬底上生长的单根多壁碳纳米管一端的完美接触.研究了单根多壁碳纳米管室温下的电输运特性,发现多壁碳纳米管具有非常高的电流承载能力.对于直径100nm的碳纳米管,其电阻为34.4Ω,流经碳纳米管的最大电流可达7.27 mA,对应的电导为 460—490G0 .这一实验结果表明,大直径的多壁碳纳米管在室温下可以实现多通道弹道输运,是未来纳电子器件与电路的理想互联导线.     

Multichannel ballistic transport in multiwall carbon nanotubes

The electric transport properties of an individual vertical multiwall carbon nanotube (MWCNT) were studied in situ at room temperature in a scanning electron microscope chamber. It was found that the single MWCNT has a large current-carrying capacity, and the maximum current can reach 7.27 mA. At the same time, a very low resistance of about 34.4 ohms and a high conductance of about (460-490)G0 were obtained. The experimental observations imply a multichannel quasiballistic conducting behavior occurring in the MWCNTs with large diameter, which can be attributed to the participation of multiple walls in electrical transport and the large diameter of the MWCNTs.     

Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots

In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capture data by a similar method to that used for emission, by the box-car method. The capture activation energies are determined and compared with the emission activation energies.     

Characterization of single-crystalline GaAs by imaging with ballistic phonons

Ballistic phonon propagation in single-crystalline [001]-oriented gallium arsenide has been studied using low-temperature scanning electron microscopy for imaging. Deviations in the phonon focusing pattern due to dispersion effects were found by comparing the phonon images to theoretical calculations of the long-wavelength limit. The phonon propagation behavior in, samples cut from differently prepared wafers has been investigated. For highly impure crystals we found a pronounced increase of the diffusive signal component at the expense of the ballistic one. Samples with varying dislocation densities also showed a sensitive dependence, of the ballistic phonon propagation on these crystal defects. For focusing calculations considering elastic scattering processes the diffusivity of the phonons could be determined as a function of the mean scattering length. We have found phonon mean free paths of 0.35 mm to 0.80 mm for the various GaAs crystals.     

Dispersive anisotropic ballistic phonon propagation in [100] GaAs

We report experimental observations of the phonon focusing pattern in [100] GaAs using low temperature electron beam scanning for phonon generation. The typical dispersive effects for high-frequency phonons expected from the calculations by Tamura have clearly been observed using PbIn tunnel junctions for phonon detection. The quantitative comparison of our experimental results with the frequency dependent calculations by Tamura allowed to determine the dominant phonon frequencies contributing to the detector signal in our different experiments. Above the temperature of the -point the dominant phonon frequencies appear to be shifted considerably to lower values, which could be explained by a heating effect in the liquid-He layer adjacent to the tunnel junction detector. By comparing the observed magnitude of the detector signal with different theoretical treatments of the detector response, we have found satisfactory agreement for a model where the perturbation due to the high-frequency phonons is restricted to the base electrode of the detector reached first by the phonons following their passage through the crystal.     

Picosecond time-resolved two-dimensional ballistic electron transport

Time-resolved transport of ballistic electrons in a two-dimensional electron gas has been measured with a resolution of less than 5 ps. This was accomplished by using picosecond electrical pulses to launch electrons from the emitter of a transverse magnetic focusing structure and optoelectronically sampling the collector voltage. Both plasma resonances and the ballistic transport signal are clearly resolved. The transit time appears to be somewhat longer than expected from simple Fermi velocity considerations.     

Mesoscopic rectifiers based on ballistic transport

Recent experiments on symmetry-broken mesoscopic semiconductor structures have exhibited an amazing rectifying effect in the transverse current-voltage characteristics with promising prospects for future applications. We present a simple microscopic model, which takes into account the energy dependence of current-carrying modes and explains the rectifying effect by an interplay of fully quantized and quasiclassical transport channels in the system. It also suggests the design of a ballistic rectifier with an optimized rectifying signal and predicts voltage oscillations which may provide an experimental test for the mechanism considered here.     

Mean free path of ballistic electrons in GaAs/AlGaAs superlattices

The mean free path of ballistic electrons in GaAs/AlGaAs superlattices was measured using the technique of hot electron spectroscopy in magnetic fields perpendicular to the growth direction. We utilize the fact that the total effective path of an injected hot electron is a function of the applied magnetic field. For a superlattice with 6.5 nm GaAs wells and 2.5 nm GaAlAs barriers we measure a mean free path of 80 nm. The experimental results of a ten-period SL sample are compared to a fully three-dimensional calculation of the transmission including interface roughness with island sizes of 10 nm. We demonstrate that the observed mfp is limited due to interface roughness scattering for temperatures up to 50 K.