Characterization of a LiCoO2 thin film cathode grown by pulsed laser deposition

A highly (003)-oriented pure LiCoO₂ thin film cathode, without Co₃O₄ impurities, was grown on a stainless steel substrate by pulsed laser deposition and characterized by electrochemical testing, scanning electron microscopy (SEM), ex situ X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS). The initial reversible discharge capacity of the LiCoO₂ thin film cathode reached 52.5?μAh/cm²µm and capacity loss was about 0.18% per cycle at a current density of 12.74?μA/cm². The chemical diffusion coefficient of the Li⁺ ion was estimated to be about 4.7?×?10^?11?cm²/s from cyclic voltammetric (CV) scans. Ex situ XRD revealed that the spacing of crystalline planes expanded about 0.09?Å when charged to 4.2?V, corresponding to Li_0.5CoO₂, lower than the value for composite powder LiCoO₂ electrodes. XPS results showed that the number of low-coordinated oxygen ions increased relative to the removal of Li⁺ ions.     

Femtosecond pulsed laser ablation of 3CSiC thin film on silicon

A femtosecond pulsed Ti:sapphire laser (pulse width=120 fs, wavelength=800 nm, repetition rate=1 kHz) was employed to perform laser ablation of 1-m-thick silicon carbide (3CSiC) films grown on silicon substrates. The threshold fluence and ablation rate, useful for the micromachining of the 3CSiC films, were experimentally determined. The material removal mechanisms vary depending on the applied energy fluence. At high laser fluence, a thermally dominated process such as melting, boiling and vaporizing of single-crystal SiC occurs. At low laser fluence, the ablation is a defect-activation process via incubation, defect accumulation, formation of nanoparticles and final vaporization of boundaries. The defect-activation process reduces the ablation threshold fluence and enhances lateral and vertical precision as compared to the thermally dominated mechanism. Helium, as an assistant gas, plays a major role in improving the processing quality and ablation rate of SiC thin films due to its inertness and high first ionization energy. PACS 79.20.Ds; 42.62.Cf; 42.70.Qs; 61.72; 61.46     

Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique

Bi_3.99Ti_2.97V_0.03O₁₂ (BTV) thin films were grown by pulsed laser deposition at substrate temperatures ranging between 650 and 750 °C. The structural phase, and orientation of the deposited films were investigated in order to understand the effect of the deposition parameters on the properties of the BTV films. As the substrate temperature was increased to 700 °C, the films started showing a tendency of assuming a c-axis preferred orientation, while at lower temperatures polycrystalline films were formed. The Au/BTV/Pt capacitor showed an interesting dependence of the remnant polarization (P_r) as well as dc leakage current values on the growth temperature. The film deposited at 675 °C showed a very large 2P_r of 42 μC cm⁻², which is the largest for BTV thin films among the values reported so far.     

Preparation of Ga_2O_3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

Gallium oxide(Ga_2O_3) thin films were deposited on a-Al2O3(1120) substrates by pulsed laser deposition(PLD) with different oxygen pressures at 650?C. By reducing the oxygen pressure, mixed-phase Ga_2O_3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga_2O_3 thin film solar-blind photodetectors(SBPDs) were prepared.Comparing the responsivities of the mixed-phase Ga_2O_3 SBPDs and the single β-Ga_2O_3 SBPDs at a bias voltage of 25 V,it is found that the former has a maximum responsivity of approximately 12 A/W, which is approximately two orders of magnitude larger than that of the latter. This result shows that the mixed-phase structure of Ga_2O_3 thin films can be used to prepare high-responsivity SBPDs. Moreover, the cause of this phenomenon was investigated, which will provide a feasible way to improve the responsivity of Ga_2O_3 thin film SBPDs.     

Superfluid density in a highly underdoped YBa_{2}Cu_{3}O_{6+y} superconductor

The superfluid density rho_{s}(T) identical with1/lambda;{2}(T) has been measured at 2.64 GHz in highly underdoped YBa_{2}Cu_{3}O_{6+y}, at 37 dopings with T_{c} between 3 and 17 K. Within limits set by the transition width DeltaT_{c} approximately 0.4 K, rho_{s}(T) shows no evidence of critical fluctuations as T-->T_{c}, with a mean-field-like transition and no indication of vortex unbinding. Instead, we propose that rho_{s} displays the behavior expected for a quantum phase transition in the (3+1)-dimensional XY universality class, with rho_{s0} proportional, variant(p-p_{c}), T_{c} proportional, variant(p-p_{c});{1/2}, and rho_{s}(T) proportional, variant(T_{c}-T);{1} as T-->T_{c}.     

Ferroelectricity and structure of BaTiO3 grown on YBa 2Cu3O_{7 - \delta } thin films

We have investigated the crystal structure and the ferroelectric properties of BaTiO₃ thin films with YBa₂Cu₃O as the bottom and Au as the top electrode. Epitaxial heterostructures of YBa₂Cu₃O and BaTiO₃ were prepared by dc and rf sputtering, respectively. The crystal structure of the films was characterised by X-ray diffraction. The ferroelectric behaviour of the BaTiO₃ films was confirmed by hysteresis loop measurements using a Sawyer Tower circuit. We obtain a coercive field of 30 kV/cm and a remanent polarisation of 1.25 μC/cm². At sub-switching fields the capacitance of the films obeys a relation analogous to the Rayleigh law. This behaviour indicates an interaction of domain walls with randomly distributed pinning centres. At a field of 5 MV/m we calculate a 3% contribution of the irreversible domain wall motion to the total dielectric constant. Received 24 June 1999 and Received in final form 27 August 1999     

Optical emission spectroscopy of thin film fabrication by pulsed laser ablation under high-gravity

We carried out the thin film deposition of iron silicide by pulsed laser ablation (PLA) on a sapphire substrate, which was placed on a high-speed rotating titanium disk. The deposited thin film exhibited a continuous composition gradient. We investigated how the continuous composition gradient was attained, because the strength of the gravity field in our experiment was far below that in the experiment on bulk crystalline compounds. In the present study, we obtain the spatial distribution of several species in the PLA plume of FeSi₂ by using an intensified charge-coupled device (ICCD) camera.     

La,V共掺杂的Bi_4Ti_3O_(12)铁电薄膜的溶胶-凝胶法制备及性能测试

采用溶胶-凝胶(sol-gel)工艺在Pt/TiO2/SiO2/p-Si(100)衬底上制备出Bi4Ti3O12(BIT)和Bi3.25La0.75Ti2.97V0.03O12(BLTV)铁电薄膜,研究了La,V共掺杂对BIT薄膜的晶体结构和电学性能的影响.BIT薄膜为c轴择优取向,BLTV薄膜为随机取向,拉曼光谱分析表明V掺杂降低了TiO6(或VO6)八面体的对称性,也增强了Ti—O键(或V—O键)杂化.BLTV薄膜的剩余极化Pr为25.4μC/cm2,远大于BIT薄膜的9.2μC/cm2,表现出良好的铁电性能.疲劳、漏电流测试显示BLTV薄膜具有优良的抗疲劳特性和漏电流特性,表明La,V共掺杂能有效地降低薄膜中的氧空位.     

SnO2 thin films grown by pulsed Nd:YAG laser deposition

SnO₂ thin films have been deposited on glass substrates by pulsed Nd:YAG laser at different oxygen pressures, and the effects of oxygen pressure on the physical properties of SnO₂ films have been investigated. The films were deposited at substrate temperature of 500°C in oxygen partial pressure between 5.0 and 125 mTorr. The thin films deposited between 5.0 to 50 mTorr showed evidence of diffraction peaks, but increasing the oxygen pressure up to 100 mTorr, three diffraction peaks (110), (101) and (211) were observed containing the SnO₂ tetragonal structure. The electrical resistivity was very sensitive to the oxygen pressure. At 100 mTorr the films showed electrical resistivity of 4×10⁻² Ω cm, free carrier density of 1.03×10¹⁹ cm⁻³, mobility of 10.26 cm² V⁻¹ s⁻¹ with average visible transmittance of ∼87%, and optical band gap of 3.6 eV.     

Structure and optical property changes of Nb_{2}O_{5} particles by Q-switched laser pulses in water

Monoclinic H-type Nb $_{2}$ O $_{5}$ powders subjected to Q-switched laser pulses in water were characterized by X-ray/electron diffraction and optical spectroscopy to have a significant optical property change with accompanied transformation into orthorhombic T-, pseudohexagonal TT-type and an amorphous phase. The T-Nb $_{2}$ O $_{5}$ nanoparticles were (100), (010), (001) and ( $\overline{2} $ 01) faceted and commonly in oriented intergrowth with TT-type or amorphized domains retaining the polymerized block units of the relic H-type. Such multiple-phase nanoparticles were hydrogenated and densified to modify Raman and FTIR bands and to show visible absorptions corresponding to a broad minimum band gap of 2.3–2.8 eV for potential opto-catalytic and electrochromic applications.     

Observation of multiferroic properties in a CdTe:Mn thin film grown by pulsed laser deposition techniques

We report multiferroic properties in a 3% Mn-doped CdTe (CdTe:Mn or CTM) thin film grown in a co-deposition system constituting pulsed laser deposition and radio frequency (RF) sputtering, in which the Mn concentration was tuned by the sputtering rate of Mn. We observed a clear ferroelectric hysteresis loop in the CTM thin film with remanent polarization of 3.5 μC/cm² and ferromagnetism in the film at a temperature lower than the Curie temperature of 15 K. Both features show direct evidence of multiferroics in the CTM thin film.     

Characterization of crystallized LiMn2O4 thin films grown by pulsed laser deposition

LiMn₂O₄ thin films were grown on stainless steel substrates at 625°C and 100?mTorr of oxygen by pulsed laser deposition. The deposited film was highly crystallized with an average crystal size of about 260?nm. The initial discharge capacity of the film was about 53.8?µAh?cm^?2?µm^?1 and the capacity decayed at an average rate of about 0.29% per cycle when the film was cycled between 3.0 and 4.5?V vs. Li/Li⁺, with a current density of 20?µA?cm^?2. It was observed that the grains became smaller and the boundaries of grains became obscure after 100 cycles, indicating that manganese dissolution via loss of MnO may be the main factor leading to the capacity fade in pure thin film LiMn₂O₄ electrodes. The apparent diffusion coefficient of Li ions, obtained from cyclic voltammetry scans, was of the order of 10^?12?cm²?s^?1. High charge-transfer resistance was observed at high potentials. Ex-situ X-ray diffraction (XRD) and Raman spectroscopy were used to investigate the structure changes of LiMn₂O₄ thin film with intercalation/de-intercalation of lithium. XRD results revealed a relatively small lattice change with the removal of lithium in crystallized thin film, compared to that of powder LiMn₂O₄ cathode.     

Structure and up-conversion luminescence of Pr~(3+)/Yb~(3+) co-doped Ca Nb_2O_6 thin films by pulsed laser deposition

Pr3t∕Yb3tco-doped Ca Nb2O6 thin films are deposited on Si(100) substrates by pulsed laser deposition and annealed at different temperatures in air atmosphere. X-ray diffraction, Raman spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and photoluminescence spectra are used to characterize the samples. The results show that the annealing temperature has a strong effect on the film's grain size, structure,morphology, and the up-conversion luminescence properties. The grain size and up-conversion luminescence of Pr3t∕Yb3tco-doped Ca Nb2O6 films increases with the increasing annealing temperature.     

Controlling the size and alignment of ZnO microrods using ZnO thin film templates deposited by pulsed laser ablation

The production of dense arrays of well aligned ZnO nano- and microrods with a controllable distribution of diameters is demonstrated. The rods were grown using a hydrothermal method, on pre-deposited ZnO thin films exhibiting a range of different grain sizes. These template ZnO thin films were deposited by pulsed laser ablation, at 193 nm, in a low background pressure of O₂; average grain sizes ranged from 10 nm (room temperature deposition) to 50 nm when deposited at a substrate temperature (T_sub) of 500 °C. The morphology of the ZnO microrod arrays grown onto these ZnO thin films was found to depend on the T_sub used during film deposition. Increasing T_sub resulted in a lower density of larger nanorods, with a more pronounced [0001] alignment. The diameters of the rods produced are typically an order of magnitude greater than the grain size of the template ZnO film. Thus the rods cannot be a direct continuation of the grain structure of the template films. Rather, we suggest that the rod diameter is controlled by the density of sites at which the initial nucleation occurs, which is expected to be higher on the smaller grain size films deposited at lower temperatures. The factor controlling the final size of the rods is thus the available free space into which they can grow, which is smaller at the higher nucleation densities. The increased extent of [0001] texturing of the thin film templates deposited at higher T_sub is proposed as the reason for the improved [0001] alignment of rods grown on these templates. PACS 81.07.De; 81.10.Dn; 52.38.Mf     

Synthesis of free-standing Ga_2O_3 films for flexible devices by water etching of Sr_3Al_2O_6 sacrificial layers

Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.     

Rectifying and photovoltaic properties of ZnCo_2O_4/Si heterostructure grown by pulsed laser deposition

ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm2and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures' photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.     

Morphology and crystalline-phase-dependent luminescence of Li-doped Gd2O3:Eu3+ thin films grown by pulsed laser deposition

Gd₂O₃:Eu³⁺ and Li-doped Gd₂O₃:Eu³⁺ luminescent thin films have been grown on Si(100) substrates using pulsed laser deposition. The films grown at different deposition conditions show different crystalline and morphology structures and luminescent characteristics. Although both cubic and monoclinic crystalline structures were observed in both Gd₂O₃:Eu³⁺ and Li-doped Gd₂O₃:Eu³⁺ films, the cubic structure becomes more dominant for Li-doped Gd₂O₃:Eu³⁺ films. The photoluminescence brightness data obtained from Li-doped Gd₂O₃:Eu³⁺ films indicate that Si(100) is a promising substrate for growth of high-quality Li-doped Gd₂O₃:Eu³⁺ thin-film red phosphor. In particular, the incorporation of Li⁺ ions into the Gd₂O₃ lattice induced a change of crystallinity and enhanced surface roughness. Two major factors to determine photoluminescence brightness for Li-doped Gd₂O₃:Eu³⁺ films were crystalline phase and surface roughness. The highest emission intensity was observed with Gd_1.84Li_0.08Eu_0.08O₃, whose brightness was a factor of 2.1 larger than that of Gd₂O₃:Eu³⁺ films. This phosphor is promising for applications in flat-panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w     

Growth of Sr2CrReO6 epitaxial thin films by pulsed laser deposition

We report the growth, structural, magnetic, and electrical transport properties of epitaxial Sr₂CrReO₆ thin films. We have succeeded in depositing films with a high crystallinity and a relatively large cationic order in a narrow window of growth parameters. The epitaxy relationship is Sr₂CrReO₆ (SCRO) (0 0 1) [1 0 0]∥SrTiO₃ (STO) (0 0 1) [1 1 0] as determined by high-resolution X-ray diffraction and scanning transmission electron microscopy (STEM). Typical values of saturation magnetization of M_S (300 K)=1 μ_B/f.u. and ρ (300 K)=2.8 mΩ cm have been obtained in good agreement with previous published results in sputtered epitaxial thin films. We estimate that the antisite defects concentration in our thin films is of the order of 14%, and the measured Curie temperature is T_C=481(2) K. We believe these materials be of interest as electrodes in spintronic devices.