氟化铅晶体中300nm光吸收带的起因

在PbF2晶体的透射光谱中常存在一个300nm光吸收带,其特征是吸收强度从结晶开始端向结晶结束端递减.利用原子吸收光谱分析(AAS),发现具有300nm光吸收带的晶体含有比较多的杂质离子Ca和Ba,但根据掺杂实验及其它氟化物晶体中存在的类似吸收现象,排除了Ca和Ba是造成这一吸收现象的原因,而是认为Ce3+离子杂质的4f→5d跃迁是造成该吸收带的原因.氟化铅晶体中的微量Ce3+离子杂质来源于生产HF时所使用的天然矿物CaF2.通过对HF这一制备PbF2原料的高度提纯可以有效地消除晶体中的300nm吸收带.     

15;Yb:YAlO3晶体的生长和光谱研究

本文采用中频感应提拉法成功生长了Yb掺杂浓度高达15;的YAlO3晶体,晶体尺寸约30mm×120mm,晶体质量较好.对生长的晶体沿垂直于b轴方向进行了切割,将样品分别在氢气和氧气中退火后进行了吸收和荧光测试.在氧气中退火后的样品具有较大的峰值吸收宽度,但同时也增加了基线的吸收系数.分析表明在940nm泵浦下,1011nm和1037nm将是实现激光输出的候选波长.     

温梯法与提拉法生长YAG晶体吸收光谱的研究

本文研究了提拉法和温梯法生长的YAG晶体在紫外-可见光-红外的吸收光谱,发现提拉法生长的YAG在255nm处产生弱吸收,而温梯法生长的晶体在该处不存在吸收峰.通过对YAG晶体荧光光谱及电子顺磁共振谱的测试和分析,认为提拉法的晶体在255nm处产生的弱吸收是由Fe3+所引起的.     

退火对Nd,Cr:GSGG激光晶体吸收光谱的影响

本文应用吸收光谱法,对提拉法生长的Nd,Cr:GSGG晶体在不同气氛下退火后的光谱变化进行了研究.氧化气氛下退火后的吸收光谱中,在1μm处出现了由于晶体中存在Cr4+离子所引起的两个吸收带,被称为1μm吸收损失.还原气氛(CO和H2)下退火后的吸收光谱中,在1μm处的吸收带基本消失,这对于提高激光效率是非常有利的.此外,在642nm处的吸收带强度有一定的减弱.这些数据对于晶体后处理工艺的改进和激光器设计具有重要的参考价值.     

Cr4+,Yb3+:YAG晶体的生长及其吸收特性

用提拉法生长了Cr,Yb:YAG晶体,研究了在室温的吸收光谱特性以及氧化性气氛退火对其吸收特性的影响.在室温吸收光谱中存在着五大吸收带:在440nm和605nm存在着Cr3+离子的两个吸收带,而且退火使其发生了明显的"红移";在937nm和968nm处存在Yb3+离子的两个吸收带,能与InGaAs激光二极管(LD)有效耦合,适合激光二极管泵浦;而且在1.03μm处有一Cr4+离子的吸收峰,可用作可饱和吸收体,从而可以实现对Yb3+的自调Q激光输出.在氧化性气氛下退火对晶体吸收特性及缺陷的影响是:退火使晶体的缺陷明显减少而且使Cr4+浓度得到进一步的增加;Cr4+离子浓度的增加主要是由于二价阳离子Ca2+进入相应的Y3+晶格所造成.并且从晶格场的角度讨论了退火使Cr3+离子的吸收带发生"红移"的原因.     

温梯法大尺寸白宝石单晶的生长

应用温梯法生长出直径１２０ｍｍ,质量为４ｋｇ的白宝石晶体。进行了杂质定量分析和光谱分析,对晶体中杂质的来源进行了讨论。确定了晶体有Ｆ心引起的紫外吸收和杂质离子的吸收。     

纯LaAlO3和Ce3+:LaAlO3单晶的吸收谱和透过谱研究

本文采用中频感应提拉法成功生长了LaAlO3和Ce3+:LaAlO3晶体.沿生长方向即α轴方向切割、抛光后得到实验样品.测试了氢气退火前后纯LaAlO3和Ce3+:LaAlO3从190nm到2500nm的吸收谱和透过谱.测试结果表明:纯LaAlO3晶体在196～220nm处出现宽带吸收,氢气退火后此一波段的吸收系数明显降低;未退火的Ce:LaAlO3晶体在196～209nm,246nm,314nm出现明显的吸收波段,氢气退火后其吸收谱发生显著变化,在198,206,214,246和314nm处出现对应于Ce3+的4f-5d的跃迁吸收;Ce:LaAlO3晶体较之纯LaAlO3晶体在红外区的透过率要高;氢气退火后,Ce:LaAlO3晶体和纯LaAlO3晶体在红外区的透过率下降.     

Yb,Ho∶YAG晶体的生长及光谱性能

采用中频感应提拉法成功生长出Yb (15 at%),Ho (1 at%):YAG激光晶体,研究了室温下晶体的吸收光谱,发射光谱特性和荧光寿命.吸收光谱中在938 nm处存在Yb3+的吸收带,能与InGaAs 激光二极管(LD)有效耦合,适合激光管二极抽运.荧光光谱中存在两个荧光主峰,分别位于1907 nm和2091 nm附近.研究表明:Yb,Ho:YAG晶体是一种有发展前景的激光增益介质.     

ZnSe和Cr∶ ZnSe单晶的温梯法制备及光学性能研究

采用温度梯度法(TGT)生长了直径为32 mm大尺寸ZnSe晶体.对生长出的ZnSe单晶进行了光学性能分析.采用磁控溅射方法在ZnSe晶体上镀铬膜,通过热扩散方法成功制备出中红外Cr∶ ZnSe激光晶体,并研究了Cr∶ZnSe晶体的光谱性能.吸收光谱测试观察到了Cr2+(3d4)取代四面体配位Zn2的5T2→5E能级的跃迁在1800nm的吸收带.77 K低温的光致发光光谱表明Cr∶ ZnSe晶体具有中心波长位于2.2 μm的宽谱带发射特征.     

生长温度对KDP晶体光学性质影响的研究

用降温法在不同的温度下快速生长KDP晶体,并测量其透过光谱、光学均匀性、金属杂质含量和光散射性能.结果表明随着生长温度的提高,KDP晶体的紫外光吸收和光散射点密度明显降低,但均匀性和杂质金属离子含量并无明显变化.     

Radiation-Induced Radicals in Anthracene Single Crystals

EPR and optical absorption studies have been made on anthracene single crystals irradiated with electrons at liquid nitrogen temperature. Studies of annealing of the EPR spectra induced by irradiation at liquid nitrogen temperature revealed that they consisted of a broad singlet and two sets angular dependent lines. The angular dependence of the latter was studied and they were ascribed to the 9- and 1-dibenzo-cyclohexadienyl radicals. From comparison of the change in the EPR spectra with the change in the optical absorption spectra at room temperature, optical absorption bands at 535 and 675 nm were ascribed to 9- and 1-dibenzo-cyclohexadienyl radicals. An optical absorption band at 645 nm, which is created by irradiation at liquid nitrogen temperature and decays within two hours at room temperature was suggested to arise from the 2-dibenzo-cyclohexadienyl radical. The broad singlet, which is annealed below room temperature, was ascribed to the 9-anthracyl radical.     

Nd:NaY(WO4)2激光晶体光谱性能研究

Nd:NaY(WO4)2 是一种性能优良的激光晶体.本文采用提拉法生长了Nd:NaY(WO4)2晶体,测试了该晶体的吸收光谱和光荧光光谱.结果表明,该晶体在804nm、752nm、586nm附近有较强、较宽的吸收峰,适合于LD泵浦.从光荧光光谱得到发射波长分别为1064nm和1350nm,并计算了晶体的吸收截面和发射截面.     

Zn,Co双掺杂近化学计量比LiNbO_3晶体的生长及性能

以K_2O为助熔剂,应用坩埚下降法生长出了Co~(2+) 初始浓度为0.5 mol;,以及ZnO分别为3 mol;与6 mol;的单掺与双掺杂SLN晶体(分别用SLN0, SLN3, SLN6表示).测定了晶体上下部位的吸收与发射光谱.在晶体的吸收光谱中均可观察到520 nm,549 nm,612 nm,1447 nm四个吸收峰,表明Co~(2+)处于晶体的八面体场中.ZnO的掺入明显地改变了吸收峰的相对强度.在520 nm光的激发下,观察到776 nm的荧光发射,其荧光强度的相对强弱也与ZnO的掺杂量有明显的联系.从吸收边带估算出SLN0, SLN3, SLN6晶体中Li2O的含量分别为49.06 mol;,49.28 mol;, 49.10 mol;.ZnO的掺杂量对Co~(2+)在铌酸锂晶体中的浓度分布有很大的影响作用,当ZnO的掺入量为3 mol;时,明显地抑制了Co~(2+)在LiNbO_3晶体中的掺入,当ZnO掺杂量达到6 mol;时,抑制作用减弱.本文从Zn~(2+)在LiNbO_3中随浓度变化的分凝情况以及对Co~(2+)的排斥作用解释了Co~(2+)在晶体中的分布特性以及光谱的变化情况.     

Effect of gamma-rays on some mixed alkali borate glasses containing nickel

The change of optical absorption of some irradiated mixed alkali borate glasses containing nickel has been studied by varying the gamma-ray dose or the mixed alkali oxide content. The induced bands increase as the radiation process proceeds until a certain limit after which a constancy is assumed to be reached.The investigation of the observed spectra shows that there is an induced absorption band with its maximum at 550 nm, in addition to the characteristic absorption bands of the divalent nickel ions with peaks in the visible region at 410, 640, 680 and 750 nm.     

UV–visible and infrared absorption spectra of transition metals-doped lead phosphate glasses and the effect of gamma irradiation

Undoped and transition metals (TM 3d)-doped lead phosphate glasses were prepared. Ultraviolet–visible absorption spectra were measured in the range 200–1100 nm before and after successive gamma irradiation. Experimental results indicate that the undoped lead phosphate glass reveals before irradiation strong and broad ultraviolet absorption which is related to the co-sharing of absorption due to both trace iron impurities and lead ions (Pb²⁺). In the TM-doped glasses, characteristic absorption bands are obtained in both the UV and/or visible regions due to each respective TM ion in addition to that observed by the base undoped UV absorption. Gamma irradiation produces with the undoped glass a prominent induced ultraviolet broad band centered at about 300 nm originating mostly from the contribution of trace iron impurities and the visible spectra reveal markedly high shielding behavior towards successive gamma irradiation, due to the presence of both high content of heavy Pb²⁺ ions and the sharing of phosphate as a partner. With TM-doped samples, the observed induced bands are virtually varying and related to the type of the sharing TM ions. Infrared absorption spectra reveal in the undoped and TM-doped glasses characteristic structural phosphate groups mainly consisting of metaphosphate and pyrophosphate units. Transition metals are assumed to cause depolymerization of the phosphate glass network with different ratios but the changes in IR spectral data are limited due to the low doping level. Gamma irradiation of the samples is assumed to cause changes in the bond angles or bond lengths of the structural phosphate units within network as evident in the variation of the intensities of the IR bands.     

Drawing induced absorption loss in multicomponent glass fibres

A drawing induced loss has been found to exist in multicomponent glass optical fibres, and has been shown to be due to absorption. Two loss peaks were identified at 580 and 360 nm with peak heights of 340 and 490 dBkm^?1, respectively. The 580 nm peak was believed to be due to silicon oxygen hole centres formed during fibre drawing. The induced loss could be partially removed by annealing, and the behaviour of the induced loss under various heat treatments was investigated. It was also found that the loss could be completely eliminated by the addition of 0.1 wt% As₂O₃ to the glass melt.     

Radiation induced color centers in 50PbO–50P2O5 glass

The effect of γ-irradiation in the dose range of 5 kGy up to 25 kGy on the optical absorption spectra of 50PbO–50P₂O₅ glasses is reported. The spectral absorption of these glasses before and after γ-irradiation was measured in the spectral range of 300–900 nm at room temperature. The radiation induced absorption in this spectral range shown to consist of two bands centered approximately at 545 nm and 730 nm. The fundamental absorption edge shifts generally to lower energies with increasing γ-irradiation dose up to 25 kGy in this glass sample. The intensity of the induced absorption bands increases linearly with increasing γ-irradiation dose. The higher energy band (HEB) may be due to a hole in a singly bonded non-bridging oxygen distant from a modifier cation, while the lower energy band (LEB) is also due to a hole in similar oxygen which is interacting with a neighboring cation.     

Radiation-induced defects in fluoride glasses

Fluorozirconate (ZBLA) and fluorohafnate (HBL) glasses have been exposed to ionizing radiation at room temperature, and the resulting defects have been characterized using optical absorption and electron spin resonance techniques. Prominent absorption bands were found to peak in the ultraviolet at 290 nm for the ZBLA glass and at 240 and 310 nm for the HBL glass. Two major electron spin resonance spectra having g values of 1.883 and 2.043 were induced in the HBL glass. Similar electron spin resonance spectra were found in the ZBLA glass. A third spectrum with a g value of 2.008 was also observed in the ZBLA material. The optical and electron spin resonance spectra in these glasses thermally annealed between room temperature and 300°C. Possible models for the defects are discussed.     

Ti:Al2O3透明多晶陶瓷光谱特性分析

采用传统无压烧结工艺制备出透明性良好的掺Ti氧化铝陶瓷;测定了该陶瓷的吸收光谱、荧光光谱和激发光谱.结果表明,掺Ti氧化铝透明陶瓷样品在Mg与Ti掺入离子的摩尔比(NMg/NTi)较小时,表现出Ti3+离子的490nm特征吸收峰,即2T2→2E跃迁产生的宽带吸收;NMg/NTi较大时,陶瓷样品吸收光谱中不存在Ti3+离子吸收,其250nm处吸收为O2-→Ti4+的转移吸收.掺Ti氧化铝透明陶瓷样品Ti3+离子的发射谱线与单晶的相吻合,同时Ti3+在氧化铝陶瓷中分布很均匀,且Ti3+浓度较高时仍处于未畸变的八面体格位当中.氢气氛下烧结的陶瓷样品因MgO添加剂的存在而在410nm处产生Ti4+离子荧光发射;而280nm、420nm左右的荧光发射分别是由F+和F心造成的.     

温梯法生长的Ti:Al2O3晶体的光谱分析

本文研究了不同掺Ti^3＋浓度对温梯法生长的Ti：Al2O3晶体吸收光谱、荧光光谱和X射线衍射光谱的影响。根据吸收光谱提出了一个色心模型。对比了样品各处420nm荧光谱，发现掺Ti^3＋浓度越大，该处荧光强度越弱，同时解释了420肿处荧光峰的起源。对比了样品各处720nm处的荧光谱，发现掺Ti^3＋浓度越大，该处荧光强度越强。X射线衍射谱（XRD）表明，衍射峰强度随掺Ti^3＋浓度的增大而逐渐增强。