Metal-clad graded-index planar optical waveguides: accurate perturbation analysis

We present a perturbation analysis of propagation constants and attenuation coefficients of TE and TM modes in a metal-clad linear index planar optical waveguide. The imaginary part N″ of the complex modal index N=N′ + iN″ is given by N″ = (∂N′ / ∂′), where =′ + i″ is the complex dielectric constant of the metal cladding and ∂N′ / ∂′ is obtained by numerical differentiation of the solution of the real eigenvalue equation. The cumbersome solution of a complex transcendental equation is thus completely eliminated. The results are in good agreement with those obtained by solving the eigenvalue equation in the complex plane. By taking the metal-clad linear planar waveguide as a preselected waveguide, we can use our RWKB method to solve metal-clad planar waveguides with parabolic, exponential, gaussian and complementary error function index profiles.     

2D gravity+1D matter

We consider a formulation of nonperturbative two-dimensional quantum gravity coupled to a single bosonic field (d=1 matter). Starting from a matrix realization of the discretized model, we express the continuum theory as a double scaling limit in which the 2D cosmological constant g tends towards a critical value g_c, and the string coupling 1/N→0, with the scaling parameter ∝1n (g-g_c)/(g-g_c)N held fixed. We find that in this formulation logarithmic corrections already present at tree level persist to all higher genus, suggesting a behavior different from the previously considered cases of d<1 matter.     

Simulations of migration, fragmentation and coalescence of non-wetting fluids in porous media

A model based on invasion percolation was used to simulate the migration on a non-wetting fluid through a porous medium filled with an immiscible wetting fluid under the influence of a gradient such as that provided by gravity. The migrating fluid clusters undergo both fragmentation and coalescence. The fragment size distribution obtained from two-dimensional simulations in which the gradient g is slowly increased from 0 can be represented by the scaling form N_s(g)s^-2ƒ(s|g|^-z where z=1+(D−1)ν(ν+1). Here D is the fractal dimensionality of invasion percolation, with trapping, and ν is the ordinary percolation correlation length exponent.     

On the pp → ppη(η′) reactions near threshold

The production rate for η′ in pp → ppη′ at rest is calculated in a covariant one boson exchange model, previously applied to study π⁰ and η production in NN collisions. The transition amplitudes for the elementary BN → η′N processes with B being the meson exchanged (B = π, σ, η, , ω and a₀) are taken to be the sum of s- and u-channels with a nucleon in the intermediate states, and an a₀ meson pole in a t-channel. The couplings of the η′ to hadrons are a factor 0.4 weaker than the respective η-hadron couplings, as suggested by a quark model and a singlet-octet mixing angle θ = −23°. The model reproduces near threshold cross sections for the quasielastic processes π⁻p → nη(η′) and pp → ppη(η′) reactions.     

The bose form of two-dimensional quantum chromodynamics

By means of a special choice of gauge QCD₂ [SU(N)] with one flavor of quarks is recast into the Bose form. Weak (g m) and strong (gm) coupling regimes are studied. The former is shown to be the SU(N)-symmetric confining phase in which bound states possess stringlike configurations with strings being represented by electric vortex lines; the ordinary mesons and baryons appear as longitudinal modes of electric strings. The strong coupling regime describes the Higgs phase with the residual symmetry [U(1)]^N−1 S_N where the left and right factors are the maximal abelian subgroup of SU(N) and the permutation group of N quarks, respectively; the particle spectrum consists of S_N multiplets and the [Uw(1)]^N−1 charges are trapped.     

Bound states of D(2p)–D0 systems supersymmetric p-cycles

We discuss some issues related to D(2p)–D0-branes with background magnetic fluxes, respectively, in a T-dual picture, Dp–Dp-branes at angles. In particular, we describe the nature of the supersymmetric bound states appearing after tachyon condensation. We present a very elementary derivation of the conditions to be satisfied by such general supersymmetric gauge configurations, which are simply related by T-duality to the conditions for supersymmetric p-cycles in .     

Effect of oxide thickness on the capacitance and conductance characteristics of MOS structures

In this work, the investigation of the interface states density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics in Au/SnO₂/n-Si (MOS) structures prepared at various SnO₂ layer thicknesses by spray deposition technique have been reported. It is fabricated five samples depending on deposition time. The thicknesses of SnO₂ films obtained from the measurement of the oxide capacitance in the strong accumulation region for MOS Schottky diodes are 37, 79, 274, 401, and 446 Å, for D1, D2, D3, D4, and D5 samples, respectively. The C–V and G–V measurements of Au/SnO₂/n-Si MOS structures are performed in the voltage range from −6 to +10 V and the frequency range from 500 Hz to 10 MHz at room temperature. It is observed that peaks in the forward C–V characteristics appeared because of the series resistance. It has been seen that the value of the series resistance R_s of samples D1 (47 Ω), D2 (64 Ω), D3 (98 Ω), D4 (151 Ω), and D5 (163 Ω) increases with increasing the oxide layer thickness. The interface state density D_it ranges from 2.40×10¹³ cm⁻² eV⁻¹ for D1 sample to 2.73×10¹² cm⁻² eV⁻¹ for D5 sample and increases with increasing the oxide layer thickness.     

Supersymmetric contributions to direct CP violation in K→ππγ decays

We analyze the supersymmetric contributions to direct–CP–violating observables in K→ππγ decays induced by gluino–mediated magnetic–penguin operators. We find that ε′_+−γ and the differential width asymmetry of K^±→π^±π⁰γ decays could be substantially enhanced with respect to their Standard Model values, especially in the scenario where ε′/ε is dominated by supersymmetric contributions. These observables could therefore provide a useful tool to search for New Physics effects in |ΔS|=1 transitions, complementary to ε′/ε and rare decays.     

Wess–Zumino actions and Dirichlet boundary conditions for super p-branes with exotic fractions of supersymmetry

The general solutions in the models of closed and open superstring and super p-branes with exotic fractions of the N=1 supersymmetry are considered and the spontaneously broken character of the OSp(1,2M) symmetry of the models is established. It is shown that extending these models by Wess–Zumino terms generates the Dirichlet boundary conditions for superstring and super p-branes. Using the generalized Wess–Zumino terms new OSp(1,2M)-invariant super p-brane and Dp-brane-like actions preserving (M−1)/M fraction of supersymmetry are proposed. For M=32 these models suggest new superbrane vacua of M-theory preserving 31 from 32 global supersymmetries.     

The O(N) vector model in the large-N limit revisited: multicritical points and double scaling limit

The multicritical points of the O(N)-invariant N vector model in the large-N limit are re-examined. Of particular interest are the subtleties involved in the stability of the phase structure at critical dimensions. In the limit N → ∞ while the coupling g → g_c in a correlated manner (the double scaling limit) a massless bound state O(N) singlet is formed and powers of 1/N are compensated by IR singularities. The persistence of the N → ∞ results beyond the leading order is then studied with particular interest in the possible existence of a phase with propagating small mass vector fields and a massless singlet bound state. We point out that under certain conditions the double scaled theory of the singlet field is non-interacting in critical dimensions.     

Effects of oxygen flow rate on the properties of HfO2 layers grown by metalorganic molecular beam epitaxy

The investigations on the properties of HfO₂ dielectric layers grown by metalorganic molecular beam epitaxy were performed. Hafnium-tetra-tert-butoxide, Hf(C₄H₉O)₄ was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The grown film was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and capacitance–voltage (C–V) and current–voltage (I–V) analyses. As an experimental variable, the O₂ flow rate was changed from 2 to 8 sccm while the other experimental conditions were fixed. The XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer effect and the density of trapped charges in the interfacial layer was increased as the oxygen flow rate increased. The observed microstructure indicated the HfO₂ layer was polycrystalline, and the monoclinic phases are the dominant crystal structure. From the C–V analyses, k = 14–16 and EOT = 44–52 were obtained, and the current densities of (3.2–3.3) × 10⁻³ A/cm² were measured at −1.5 V gate voltage from the I–V analyses.     

“Missing moment” and perturbative methods for polynomial iterated function systems

An iterated function system (IFS) over a compact metric space X is defined by a set of contractive maps w_i: X → X, i = 1,…,N, with associated nonzero probabilities p_i > 0, p_i = 1. The “parallel” action of the maps defines a unique compact invariant attractor set A X which supports an invariant measure μ and which is balanced with respect to the p_i. For linear , the invariance of μ yields a relation between the moments g_n = ∫ χⁿ dμ which permits their recursive computation from the initial value g₀ = 1. For nonlinear w_i, however, the moment relations are incomplete and do not permit a recursive computation. This paper describes two methods of obtaining accurate estimates of the moments when the IFS maps w_i are polynomials: (i) application of the necessary Hausdorff conditions on the g_i to obtain convergent upper and lower bounds and (ii) a perturbation expansion approach. The methods are applied to some model problems.     

DNA-based organic-on-inorganic semiconductor Schottky structures

A sandwich device has been fabricated from DNA molecular film by solution processing located between Al and p-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) at room temperature and in dark. The DNA-based structure has showed the rectifying behavior. From its optical absorbance spectrum, it has been seen that DNA has been a semiconductor-like material with wide optical band energy gap of 4.12 eV and resistivity of 1.6 × 10¹⁰ Ω cm representing a p-type conductivity.     

Graduation of electron spectrometer intensity scale. Part 2. How to do it

Graduation function G(E′) absolute values have been determined experimentally for the first time for the intensity scale of an ordinary Auger electron spectrometer. The determination of G(E′) includes creation of an original standard signal and measurement of the consequent reaction of the spectrometer using a “giant rectangular modulation” operation mode, integration of the measurand, and use of an original G(E′) definition. The experimental values of G(E′) are presented in the correct dimensional units for a pass energy range E′ = 150–1000 eV. A non-monotonous behaviour of G(E′), a strong dependence of G(E′) on the multiplier entrance bias voltage, and a discrepancy between the graduation functions of spectrometers of the same type with CMA are demonstrated. Possibilities are predicted for a similar G(E′) determination for other types of spectromer.     

Scaling properties of eden clusters in three and four dimensions

We study the scaling properties of noise reduced Eden clusters in three and four dimensions for variant B in the strip geometry. We find that the width W for large times behaves as a(s)g(L/s^d−1), where L is the width of the strip, s the noise reduction parameter, d the dimension of space, and a(s) a decreasing function of s, g is a scaling function with the property g(u)→1/2 as u→0 and g(u)u^x as u→∞, where χ is the roughness exponent. This scaling result leads to a new way of determining χ. In 3 dimensions, our numerical values for χ support a recent conjecture by Kim and Kosterlitz: χ = 2/(d + 2), and contradict all the former analytical conjectures. In 4 dimensions, we cannot distinguish between the conjectures of Kim and Kosterlitz and the conjecture of Wolf and Kertész, because large crossovers and finite size effects make the measurement of the exponents difficult.     

Non-Fermi liquid regimes in U1−xMxPd2Al3(M=Y,Th)

The temperature-composition (T–x) phase diagram and NFL characteristics in the electrical resistivity ρ(T), specific heat C(T), and magnetic susceptibility χ(T) at low temperatures for the systems U_1−xM_xPd₂Al₃ (M=Y,Th) are described. The T–x phase diagram, the NFL characteristics, and the underlying mechanism for the NFL behavior are distinctly different for M=Y³⁺ and Th⁴⁺, apparently reflecting the difference in valence of the M atom substituents, and suggesting that U is tetravalent in these two systems.     

Pressure–temperature studies on conductivity of TlX(X=Cl,Br,I) compounds:: I: phase diagram. II: ionic mobility

We have measured the conductivity σ of TlX(X=Cl, Br, I) compounds up to 5.3 GPa and between 300–823 K. The σ–T dependence for all compounds can be divided into three distinct regions: (i) low temperature (LT), <400 K, with unusual negative σ–T dependence, (ii) intermediate temperature (IT), 400<650 K, with positive σ–T dependence and (iii) high temperature (HT), T>650 K, with positive σ–T dependence. The σ–T isobars were used to construct the T–P solid phase diagram for each compound. The LT region data indicate a new meta-stable phase in the 1.0–3.5 GPa range. The LT→IT transition is characterized by an inverse σ–T dependence followed by normal Arrhenius behavior up to and including the HT region. The extrapolation to 1 atm of the P-dependent boundary between IT and HT regions above 3 GPa for each compound in the P–T plot yields a value close to its respective normal (1 atm) T_melt suggesting a solid order–disorder transition type paralleling -AgI behavior. The abrupt drop in conductivity in the LT region for P between 2.5–4.1 GPa of all compounds is at variance with the Arrhenius behavior observed for unperturbed ion migration implying the appearance of a second factor overriding the Arrhenius temperature dependence. Normal Arrhenius σ–T dependence prevails in both IT and HT regions with Q_c values of 85–100 kJ mol⁻¹ and 50–75 kJ mol⁻¹, respectively. The higher conductivities at 0.4 GPa for TlBr and TlI relative to their 1 atm data and the increasing σ with P are in strong contrast to the normal σ-P behavior of TlCl. The dependence of activation volume ΔV^‡ on T for TlCl, i.e. ΔV^‡>0, shows abnormally high values with a maximum at 500 K for P<3.0 GPa but reasonable ΔV^‡ values appear above 3.0 GPa. The ΔV^‡–T dependence for both TlBr and TlI with ΔV^‡<0 is incompatible with an ion transport mechanism suggesting an electronic conduction process and implying an ionic–metallic transition at higher pressures. These contrasting conductivity features are discussed and interpreted in terms of electronegativity differences and bonding character rather than structure.     

Oxygen nonstoichiometry and phase transitions of the neodymium-rich Nd1+xBa2−xCu3Oz solid solution

On the basis of chemical, thermal analysis and Cu K-edge X-ray absorption measurements, oxygen content in the Nd_1+xBa_2−xCu₃O_z solid solution was determined between 1000°C in air and 400°C in oxygen for x=0.05–0.9 compositions. It has been observed that the oxygen nonstoichiometry Δz of the Nd_1+xBa_2−xCu₃O_7+x/2−Δz solid solution decreases 2–2.5 times for a large substitution (Δz≈0.3–0.33 for x=0.9), despite of the acclaimed higher total oxygen content. The difference in nonstoichiometry is explained by a higher average value of the copper oxidation state (ACV), which is vital for the solid solution with large x even at elevated temperatures (ACV≈2–2.05 for x>0.3 at 1000°C, PO₂=0.21 atm). On the contrary, the ACV after complete oxygenation is almost constant (about 2.25–2.3) for the whole series. The x-dependence of the oxygen content is not monotonous and structural phase transitions can be observed at x=0.3 and x=0.6, as confirmed by the X-ray diffraction and the Raman scattering spectroscopy. The first well-known transition is connected with the oxygen disorder due to the Nd substitution for Ba at random Ba-sites. In the present work, it is proved by the apical oxygen mode broadening in Raman spectra. Ordering of the Nd and Ba atoms with a subsequent orthorhombic distortion of the lattice may occur even at 1000°C in air due to the second transformation at x≈0.6. The invariable orthorhombicity of the Nd-rich solid solution with x>0.6 is not caused by the oxygen absorption as in the x=0.05 case. Existence of high- and low-temperature orthorhombic modifications of this solid solution has been observed for the first time. Finally, a tentative 3D (z–x–T) diagram is suggested for the Nd_1+xBa_2−xCu₃O_z solid solution up to 1000°C in air, including the new x=0.6–0.9 region.     

Ti/Al p-GaN Schottky barrier height determined by C–V measurements

Data are presented on the rigorous method of capacitance–voltage (C–V) measurements to the barrier height of Ti/Al p-GaN Schottky junction. For a sample with Hall concentration of 5.5 × 10¹⁶/cm³ the upper limit of the modulation frequency leading the full response of the activated carriers is defined as 1.5 kHz from the capacitance versus modulation frequency (C–f) plot. The activation energy of the Mg acceptors determined from the temperature-dependent C–f plot is 0.12 eV. The barrier height estimated with this activation energy and the intercept voltage of the 1/C²–V plot drawn with the 1.5 kHz C–V data is 1.43 eV at 300 K and 1.41 eV at 500 K. This is the most reliable barrier height ever reported. A reliable room temperature C–V doping profile is demonstrated using the 1.5 KHz modulation, which is sensitive enough to resolve the presence of a 15 nm thin highly doped (8 × 10¹⁸/cm³) layer formed near the surface.