Valley susceptibility of an interacting two-dimensional electron system

We report direct measurements of the valley susceptibility, the change of valley population in response to an applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable resemblance to the enhancement of the spin susceptibility and establishes the analogy between the spin and valley degrees of freedom.     

Spin polarization of two-dimensional electron system in parabolic potential

We analyze the ground state of the two-dimensional quantum system of electrons confined in a parabolic potential with the system size around 100 at 0 K. We map the system onto a classical system on the basis of the classical-map hypernetted-chain (CHNC) method which has been proven to work in the integral-equation-based analyses of uniform systems and apply classical Monte Carlo and molecular dynamics simulations. We find that, when we decrease the strength of confinement keeping the number of confined electrons fixed, the energy of the spin-polarized state with somewhat lower average density becomes smaller than that of the spin-unpolarized state with somewhat higher average density. This system thus undergoes the transition from the spin-unpolarized state to the spin polarized state and the corresponding critical value of rs estimated from the average density is as low as rs∼0.4 which is much smaller than the rs value for the Wigner lattice formation. When we compare the energies of spin-unpolarized and spin-polarized states for given average density, our data give the critical rs value for the transition between unpolarized and polarized states around 10 which is close to but still smaller than the known possibility of polarization at rs∼27. The advantage of our method is a direct applicability to geometrically complex systems which are difficult to analyze by integral equations and this is an example.     

Spin edge states in two-dimensional electron systems

We consider the spin edge states, induced by the combined effect of spin-orbit interaction and hard-wall confining potential, in a two-dimensional electron system exposed to a perpendicular quantizing magnetic field. We derive an exact analytical formula for the dispersion relations of spin edge states and analyze their energy spectrum, velocity, and average transverse position. It is shown that by removing the spin degeneracy, spin-orbit interaction splits the spin edge states not only in the energy but also induces their spatial separation. It is revealed that at low magnetic fields, due to the Stark splitting of the spin-resolved edge states, the high-energy bands exhibit anti-crossings. This results in an additional structure in the behavior of the velocity of current-carrying edge states.     

Spin polarization of two-dimensional electron system in different Laughlin states and around filling factor

The spin configuration of the ground state of a two-dimensional electron system is investigated for different FQHE states from an analysis of circular polarization of time-resolved luminescence. The method clearly distinguishes between fully spin polarized, partially spin polarized and spin unpolarized FQHE ground states. We demonstrate that FQHE states which are spin unpolarized or partially polarized at low magnetic fields become fully spin polarized at high fields. Temperature dependence of the spin polarization reveals a nonmonotonic behavior at . At and the electron system is found to be fully spin polarized. This result does not indicate the existence of any skyrmionic excitations in high magnetic field limit. However, at the observed spin depolarization of electron system at and becomes broader for lower magnetic fields, so that full spin polarization remains only in a small vicinity of . Such a behavior could be considered as a precursor of skirmionic depolarization, which would dominate for smaller ratios between Zeeman and Coulomb energies.We demonstrate that the spin polarization of 2D-electron system at and can be strongly affected by hyperfine interaction between electrons and optically spin-oriented nuclears. This result is due to the fact that hyperfine interaction can both enhance and suppress effective Zeeman splitting in fixed external magnetic field.     

Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells

We report measurements of the spin susceptibility in dilute two-dimensional electrons confined to a 45 A wide AlAs quantum well. The electrons in this well occupy an out-of-plane conduction-band valley, rendering a system similar to two-dimensional electrons in Si-MOSFETs but with only one valley occupied. We observe an enhancement of the spin susceptibility over the band value that increases as the density is decreased, following closely the prediction of quantum Monte Carlo calculations and continuing at finite values through the metal-insulator transition.     

Spin transition in strongly correlated bilayer two-dimensional electron systems

Using a combination of heat pulse and nuclear magnetic resonance techniques, we demonstrate that the phase boundary separating the interlayer phase coherent quantum Hall effect at nu(T) = 1 in bilayer electron gases from the weakly coupled compressible phase depends upon the spin polarization of the nuclei in the host semiconductor crystal. Our results strongly suggest that, contrary to the usual assumption, the transition is attended by a change in the electronic spin polarization.     

Spin dynamics of Rashba-Dresselhaus two-dimensional electron systems with electron-electron interactions

Spin dynamics of Rashba-Dresselhaus two-dimensional electron systems is studied by taking account of electron-electron interactions under the D’yakonov-Perel’ mechanism. The diffusion equations for charge and spin densities are obtained through decoupling of the interactions using the auxiliary Bose field. We show that the electron-electron interaction has no effect on the infinite spin lifetime when the Rashba and Dresselhaus coupling constants satisfy the condition α = ±β. If the general condition α≠±β is satisfied, the spin lifetime is finite and enhanced by the electron-electron interaction with the increment of the temperature in the ballistic regime. The increasing amplitude of the spin lifetime depends on the ratio of the temperature to the Fermi temperature.     

Spin mass of an electron liquid

We show that in order to calculate correctly the spin current carried by a quasiparticle in an electron liquid one must use an effective "spin mass" m(s) that is larger than both the band mass m(b), which determines the charge current, and the quasiparticle effective mass m(*), which determines the heat capacity. We present two independent estimates of the spin mass enhancement, m(s)/m(b), in two- and three-dimensional electron liquids, based on (i) previously calculated values of the Landau parameters and (ii) a recent theory of the dynamical local field factor in the spin channel. Both methods yield a significant spin mass enhancement, which is larger in two dimensions than in three.     

磁台阶势垒结构中二维电子气的自旋极化输运

运用散射矩阵方法,研究了台阶磁势垒量子结构中二维电子气的隧穿输运性质.结果表明：在零偏压下,电子传输概率的自旋极化曲线随入射能量的增加而振荡衰减;随着磁台阶数的增加,电子传输概率的自旋极化度最大值减小,同时电子传输概率的自旋极化度振荡衰减也越来越慢;随着磁台阶的总宽度增加,电子传输概率的自旋极化曲线出现更明显的振荡,电子隧穿磁台阶势垒表现出明显的量子尺寸效应;在偏置电压的作用下,电子传输概率的自旋极化度在宽广的入射能量区出现明显的振荡增大,电子隧穿磁台阶势垒表现出更明显的自旋过滤效应. 关键词： 磁台阶势垒 自旋极化 自旋过滤     

Spin polarization of two-dimensional electron gas in a hybrid magnetic-electric barrier

We report on a theoretical study of spin-dependent electron transport in a two-dimensional electron gas (2DEG) modulated by a stripe of ferromagnetic metal under an applied voltage. A general formula of transmission probability for electronic tunneling through this system is obtained. Based on this formula, it is shown that large spin-polarized current can be achieved in such a device. It is also shown that the degree of electron-spin polarization is strongly dependent upon the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a voltage-tunable spin-filter.     

Oscillating susceptibility andg factor of a two-dimensional electron fluid

By making use of a sum rule, the exchange contribution to the grand partition function is obtained for a two-dimensional electron fluid in a strong magnetic field at low temperatures. The dHvA type oscillations of the dielectric constant, internal energy and effectiveg factor are derived explicitly. The amplitude of the oscillations of the effectiveg factor is found to depend on density rather strongly.     

Dependence of spin susceptibility of a two-dimensional electron system on the valley degree of freedom

We report measurements of the spin susceptibility, chi proportional, variant g(v)g*m*, in an AlAs two-dimensional electron system where, via the application of in-plane stress, we transfer electrons from one ellipsoidal conduction-band valley to another (g(v) is the valley degeneracy, and m* and g* are the electron effective mass and g factor). At a given density, when the two valleys are equally populated (g(v)=2), the measured g*m* is smaller than when only one valley is occupied (g(v)=1). This observation counters the common assumption that a two-valley two-dimensional system is effectively more dilute than a single-valley system because of its smaller Fermi energy.     

Spin polarization of two-dimensional electron gas in hybrid ferromagnetic/semiconductor nanostructures

We present a theoretical study on the spin-dependent transport of electrons in hybrid ferromagnetic/semiconductor nanosystem under an applied bias voltage. Experimentally, this kind of nanosystem can be realized by depositing a magnetized ferromagnetic stripe with arbitrary magnetization direction on the surface of a semiconductor heterostructure. It is shown that large spin-polarized current can be achieved in such a nanosystem. It is also shown that the spin polarity of the electron transport can be switched by adjusting the applied bias voltage. These interesting properties may provide an alternative scheme to realize spin injection into semiconductors, and such a nanosystem may be used as a tunable spin-filter by bias voltage.     

Spin transresistivity—a probe of the opposite-spin correlations in an electron system

We investigate the spin drag effect in spin polarized transport beyond the random phase approximation by considering an effective scattering potential that incorporates self-consistently the effects of the short range Coulomb interaction through momentum dependent local field corrections. We find that the first order many-body correction to the spin transresistivity is determined by the local field factor for opposite-spin correlations.     

Pauli spin susceptibility of a strongly correlated two-dimensional electron liquid

Thermodynamic measurements reveal that the Pauli spin susceptibility of strongly correlated two-dimensional electrons in silicon grows critically at low electron densities--behavior that is characteristic of the existence of a phase transition.     

Spin current and polarization in impure two-dimensional electron systems with spin-orbit coupling

We derive the transport equations for two-dimensional electron systems with Rashba spin-orbit interaction and short-range spin-independent disorder. In the limit of slow spatial variations, we obtain coupled diffusion equations for the electron density and spin. Using these equations we calculate electric-field induced spin accumulation and spin current in a finite-size sample for an arbitrary ratio between spin-orbit energy splitting Delta and elastic scattering rate tau(-1). We demonstrate that the spin-Hall conductivity vanishes in an infinite system independent of this ratio.     

Phase diagram of a two-dimensional electron system

The melting curve of the two-dimensional electron system is interpolated between the known classical and ground state limits. The coexistence curve encloses a finite solid-phase domain, as in the three-dimensional case.