Luminescent response from BeO exposed to alpha,beta and X radiations

This work presents the TL and OSL response of beryllium oxide detectors exposed to alpha, beta and X radiation beams. The samples were characterized, and they presented good reproducibility, good linearity interval, low energy dependence, and an acceptable fading. The luminescent response was better for the OSL technique.     

Thermal conductivity of an alloy in relation to the observed cooling rate and glass-forming ability

The glass-forming ability (GFA) of an alloy in this case is the largest diameter of a rod which can be cast fully glassy. The present work shows that the thermal conductivity of a liquid alloy has a strong effect on GFA by influencing the cooling rate upon mould casting. The initial cooling rates (for the first 70–100?K of temperature decrease), obtained for Cu-, Zr- and Au-based bulk glass-forming alloys in the liquid state, are found to scale linearly with the thermal conductivities of the liquid base elements. However the low cooling rate found for Ni-based alloy suggests that the heat transfer at the melt–mould interface may also influence the cooling rate. The low thermal conductivity of Ni-based alloys and the correspondingly low cooling rate obtained compared to Cu-based counterparts explains their lower GFA. In the literature, many factors influencing the GFA of alloys have been discussed. To these factors, the present study adds the thermal conductivity of the molten alloy and the melt–mould heat-transfer coefficient. Moreover, the cooling rate depends on temperature and, thus, the critical cooling rate itself is not a suitable parameter for indicating GFA. The cooling can be better described by an appropriate fitting of the cooling curve to an exponential temperature decay function.     

OSL and TL in TLD-100 following alpha and beta irradiation: Application to mixed-field radiation dosimetry

The optically stimulated luminescence (OSL) of LiF:Mg,Ti (TLD-100) following irradiation by beta and alpha particles was investigated by measurement of the excitation and emission spectra of OSL and comparison with thermoluminescence (TL) characteristics. The OSL excitation spectra of all the samples following both beta and alpha irradiation are very similar.Identical emission bands with very similar relative intensities following both beta irradiation and alpha particle irradiation have been recorded in the OSL induced in nominally pure LiF mono and TLD-100 polycrystals. The identical excitation and emission bands in the doped and pure crystals are strong evidence indicating that the observed OSL is due to an intrinsic trapping structure. The OSL has indeed been previously attributed to F₂ centers and F₃⁺ centers.The preferential excitation of OSL compared to TL following high ionisation density (HID) alpha irradiation is naturally explained via the identification of OSL with the “two-hit” F₂ or F₃⁺ center, whereas the major component of composite TL glow peak 5 is believed to arise from a “one-hit” complex defect. This discovery allows near-total discrimination between HID radiation and low ionisation density (LID) radiation and may have significant potential in mixed-field radiation dosimetry.     

Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides

We investigated defect production in n-type GaAs with two different free-carrier densities (4×10¹⁴ and 1×10¹⁶/cm³) by using particles liberated from radionuclides. ⁹⁰Sr and ²⁴¹Am were employed as beta and alpha sources, respectively. The results obtained for electron irradiation showed that the same set of primary defects can be produced by beta irradiation from the Sr source as by electrons produced in an accelerator. Similarly, the defects produced by alpha irradiation from the Am source closely resemble those introduced by alpha irradiation in a Van de Graaff accelerator. It was found that the relative concentrations of the primary defects in electron-irradiated GaAs are different to those in alpha-particle irradiated GaAs. Further, for the first time, an alpha irradiation induced defect which seems to be related to the doping concentration was observed in the 10¹⁶/cm³ Si doped GaAs. It is concluded that the use of radionuclides is an inexpensive and convenient method to introduce and to study radiation induced defects in semiconductors.     

A method for getting a finite $$\alpha $$ in the IR region from an all-order beta function

The analytical method of the QCD running coupling constant is extended to a model with an all-order beta function which is inspired by the famous Novikov–Shifman–Vainshtein–Zakharov beta function of \(N=1\) supersymmetric gauge theories. In the approach presented here, the running coupling is determined by a transcendental equation with non-elementary integral of the running scale \(\mu \). In our approach \(\alpha _\text {an}(0)\), which reads 0.30642, does not rely on any dimensional parameters. This is in accordance with results in the literature on the analytical method of the QCD running coupling constant. The new “analytically improved” running coupling constant is also compatible with the property of asymptotic freedom.     

Relative response of TL and component-resolved OSL to alpha and beta radiations in annealed sedimentary quartz

Knowledge of the relative luminescence response to alpha and beta radiation is very important in TL and OSL dating. In the present study the relative alpha to beta response is studied in a sedimentary quartz sample, previously fired at 900 °C for 1 h, in the dose region between 1 and 128 Gy, for both thermoluminescence (TL) and linearly modulated optically stimulated luminescence (LM – OSL). The LM – OSL measurements were performed at room temperature and at 125 °C. All OSL signals were deconvolved into their individual components. Comparison of OSL curves after alpha and beta irradiation strongly supports that quartz OSL components follow first order kinetics in both cases. In the case of TL, the relative alpha to beta response is found to be very different for each TL glow-peak, but it does not depend strongly on irradiation dose. In the case of LM – OSL measurements, it is found that the relative behaviour of the alpha to beta response is different for three distinct regions, namely the fast OSL component, the region of medium OSL component originating from the TL glow-peak at 110 °C when stimulation takes place at room temperature and finally the region of slow OSL component. Following stimulation at ambient temperature, the relative alpha to beta response of all components was not observed to depend significantly on dose, with the value of ratio being 0.03 and a tendency to decrease with increasing dose. However, in the case of measurements performed at 125 °C, the relative response of the fast components is much enhanced, and for the remaining components it increases with increasing dose. Special care must be taken to examine the relative alpha to beta response of the fast component at 125 °C which contrasts the relative response of the TL peak at ca. 325 °C. The implications for the dating of annealed quartz are also briefly discussed.     

Enhanced superradiance effect in a system of interacting two-level atoms and crossover from coherent to many-atom multiphoton relaxation regime

We study effects of direct interatomic interaction on cooperative processes in atom-photon dynamics. Using a model of two-level atoms with Ising-type interaction as an example, it is demonstrated that interparticle interaction can promote cooperative radiative relaxation. For small number of atoms this results in inhibition of incoherent spontaneous decay leading to the regime of collective pulse relaxation. Above superradiance threshold increase in delay time and enhancement of superradiance is occurred. In the case of strong interaction (as compared to excitation energy of an atom) transition to the regime of multiphoton relaxation occurs, which we discuss using a simple model of two atoms in a high-Q single mode cavity. It is shown that such transition is accompanied by Rabi oscillations involving many-atom multiphoton states. Dephasing effect of dipole-dipole interaction and solitonic mechanism of relaxation are discussed as well.     

Multiphonon relaxation rate from pumped level to upper laser level in YAG:Nd

The rise time of the near-infrared fluorescence intensity has been measured in YAG:Nd³⁺ at room temperature under the excitation by 10 ns duration pulses at 514.5 nm using a time-correlated single photon counting method. The result reveals that the relaxation rate from the pumped level (${}^2\text{K}{}_{\mathrm{<mtext>13</mtext><mtext>2</mtext>}}$ + ${}^2\text{G}{}_{\mathrm{<mtext>9</mtext><mtext>2</mtext>}}$ + ${}^4\text{G}{}_{\mathrm{<mtext>7</mtext><mtext>2</mtext>}}\text{)}$ to the upper level laser level $\text{(}{}^4\text{F}{}_{\mathrm{<mtext>sol3</mtext><mtext>2</mtext>}}\text{)}$ is larger than 10⁸s^?1, which is in contrast with the previously reported values of (1.6 ～ 2) × 10⁶s^?1. An experiment to search for the visible emission in YAG:Nd³⁺ gives support to the present value.     

多体相互作用体系中的弛豫与扩散:一个尚未解决的问题

文章目的在于引起国内研究团体对一系列复杂相互作用体系中的弛豫和扩散的普适性进行关注.研究发现,无论是不同的化学结构（如无机物、有机物、聚合物、生物分子、胶体、金属和离子导电材料）,还是不同的物理状态（如晶态、玻璃态、液体、熔体、混合体系和含水系统）,以及不同的尺度（如从块体至纳米）,这种普适性无处不在 ［K.L.Ngai.Relaxation and Diffusion in Complex Systems.New York:Springer,2011］.该现象起源于多体系统的不可逆过程,取决于一些基本物理定律,与非简谐势引发的经典混沌有关.重新认识这种普适性不仅对众多不同领域的发展有利,而且能进一步弄清楚多体系统中的弛豫与扩散问题—— 一个重要而又未解决的物理问题.作者提出的耦合模型尽管不是一个严格而完整的答案,但却能够预测多体系统的弛豫和扩散特征,而且与实验结果吻合.基于该模型,绝大多数多体系统中的弛豫与扩散行为是相似的.该模型有望为这一难题的彻底解决奠定基石.     

Temperature and pressure scaling of the alpha relaxation process in fragile glass formers: A dynamic light scattering study

We have experimentally observed the eigenmode splitting due to coupling of the evanescent defect modes in three-dimensional photonic crystals. The splitting was well explained with a theory based on the classical wave analog of the tight-binding (TB) formalism in solid state physics. The experimental results were used to extract the TB parameters. A new type of waveguiding in a photonic crystal was demonstrated experimentally. A complete transmission was achieved throughout the entire waveguiding band. We have also obtained the dispersion relation for the waveguiding band of the coupled periodic defects from the transmission-phase measurements and from the TB calculations.     

射频场照射下多自旋体系弛豫的理论计算

根据Liouville-von Neumann方程，对射频场照射下多自旋体系的弛豫进行了理论描述，并用WBR理论推导出了体系的弛豫方程组，给出了各类弛豫速率的理论计算公式.在此基础上，编制了弛豫方程组数值解的计算程序，分别用此程序和Bloch方程计算了双自旋体系在不同情况下的稳态解，并对计算结果进行了简要的分析和讨论. 关键词： 核磁共振 弛豫 射频场 多自旋体系