Magnetic behavior of Co nanostructures deposited in porous Al2O3 templates

The magnetic behavior as a function of magnetic field and temperature of nanostructures of Co deposited on insulator templates of Al₂O₃ is presented. The results show that the granular Co was formed inside the pores and the characteristics of granular ferromagnetics, such as high saturation of the magnetization and paramagnetic behavior at high magnetic fields, were observed.     

Ultra-broad near-infrared emission of Bi-doped SiO2 Al2O3 GeO2 optical fibers

Bi-doped SiO 2 –Al 2 O 3 –GeO 2 fiber preforms are prepared by modified chemical vapor deposition (MCVD) and solution doping process. The characteristic spectra of the preforms and fibers are experimentally investigated, and a distinct difference in emission between the two is observed. Under 808-nm excitation, an ultra-broad near-infrared (NIR) emission with full-width at half-maximum (FWHM) of 495 nm is observed in the Bi-doped fiber. This observation, to our knowledge, is the first in this field. The NIR emission consists of two bands, which may be ascribed to the Bi 0 and Bi + species, respectively. This Bi-doped fiber is promising for broadband optical amplification and widely tunable laser.     

Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked dielectric

Atomic layer deposited(ALD) Al2O3 /dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8°off-axis 4H-SiC(0001) epitaxial wafers are investigated in this paper.The metal-insulation-semiconductor(MIS) capacitors,respectively with different gate dielectric stacks(Al2O3/SiO2,Al2O3,and SiO2) are fabricated and compared with each other.The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field(≥12 MV/cm) comparable to SiO2,and a relatively low gate leakage current of1×10-7A/cm2 at an electric field of4 MV/cm comparable to Al2O3.The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage,indicating a less effective charge and slow-trap density near the interface.     

Er3+掺杂SiO2复合的Al2O3粉末结构及光致发光特性

采用溶胶-凝胶(sol-gel)工艺制备0.1 mol% Er³⁺掺杂Al₂O₃体系和SiO₂-Al₂O₃复合体系粉末. 实验结果表明：5 mol%的SiO₂复合加入Al₂O₃抑制γ→θ和θ→α相转变. 掺0.1 mol%Er³⁺:Al₂O₃体系粉末，900℃烧结，在1.47—1.63μm波段内光致发光(PL)谱为中心波长1.53 μm、半高宽56 nm的单一宽峰，1000—1200℃烧结，劈裂为多峰PL谱. 掺0.1 mol%Er³⁺:SiO₂-Al₂O₃复合体系粉末，在高达1200℃烧结，仍保持中心波长1.53 μm的单一宽峰PL谱，由于—OH更完全的脱除，PL强度较900℃烧结Al₂O₃体系，SiO₂-Al₂O₃复合体系均提高1个数量级. 关键词： 2-Al₂O₃复合体系')" href="#">SiO₂-Al₂O₃复合体系 掺铒 溶胶-凝胶工艺 光致发光     

Fabrication of ZnO/Al2O3 core-shell nanostructures and crystalline Al2O3 nanotube

We have demonstrated the crystalline ZnO-Al₂O₃ core-shell nanowire structure by atomic layer deposition (ALD) at a temperature 100 °C. The core-shell structure could have potential applications in the fabrication of ZnO field effect transistor. After dissolving the ZnO core, shape defined, rigid and robust crystalline Al₂O₃ shelled nanostructures have been fabricated. Nanowire ZnO nanostructures have been replicated by alumina shell. This is one of the most effective techniques for producing core-shell or shell/hollowed nanostructures of any desired objects. The Al₂O₃ shelled nanostructures could have potential applications as space confined nanoreactors, drug delivery, nanofluidic channels and optical transmitting.     

Radiation induced paramagnetic centres in MgOAl2O3SiO2 glasses containing TiO2

Upon irradiation with ⁶⁰Co γ-rays Cordierite glasses with added TiO₂ display two dominant ESR resonances arising from (a) Ti³⁺ ions (b) holes trapped at non-bridging oxygen ions singly bonded to [SiO₄]^? tetrahedra. The Ti³⁺ ions appear to be in D_4h octahedral sites with the evident distributions between the principal g values arising from an isotropic randomness at the titanium sites. However, the g parameter distributions of the hole resonance, and their changes during the addition of TiO₂ indicate the development of Silicate structures in the glasses which are the precursors of the major low temperature crystalline phases. The invariance of the hole and electron resonance lines with pre-crystallization heat treatments indicates that neither the titanium associated structures or the basic silicate structure of the glass are changed by such treatments.     

Size-selected Au clusters deposited on SiO2/Si: Stability of clusters under ambient pressure and elevated temperatures

This study examined the oxidation and reduction behavior of mass-selected Au clusters consisting of 2-13 atoms deposited on silica. An atomic oxygen environment was used for the oxidation of Au. X-ray photoelectron spectroscopy (XPS) was used to identify Au(III) and Au(O). Au₅, Au₇ and Au₁₃ clusters deposited on the as-prepared SiO₂/Si substrates were highly inert towards oxidation, whereas the other clusters could be oxidized, i.e. the chemical property drastically changed with the number of atoms in a cluster. The size-selectivity in chemical reactivity remained unchanged upon air-exposure. The chemical properties of the deposited Au clusters were unchanged after annealing at 250 °C. Annealing at higher temperatures caused structural changes to the surface, as determined by the oxidation behavior. XPS of the deposited Au clusters upon annealing indicated charge transfer from Au to silica.     

Dynamical heterogeneity and diffusion in high-density Al2O3·2SiO2 melts

Dynamical heterogeneity (DH) in high-density Al₂O₃·2SiO₂ melts has been studied in a model containing 3025 atoms via molecular dynamics (MD) simulation and at the fixed density of 4.0 g/cm³. Non-Gaussian parameter of atomic species in the system has been found and discussed. We found a clear evidence of the existence of DH in high-density Al₂O₃·2SiO₂, which has specific features differed from those observed in the lower-density one. The most mobile and immobile atoms in the system have a tendency to form clusters and temperature dependence of their mean cluster size was found. On the other hand, diffusion constant of atomic species in the system has been calculated at temperatures ranged from 3150 to 7000 K. Calculations show that at relatively not high temperatures, temperature dependence of diffusion constant shows an Arrhenius law and at higher temperatures it shows a power law: D∝(T−T_C)^γ. Diffusion data of high-density melts have been compared with those for the low-density ones. Diffusion mechanism in the system has been discussed via the temperature dependence of diffusion constant ratio and activation energy. And we found the existence of cooperative diffusion mechanism in the system.     

Chemical quenching of positronium in Fe2O3/Al2O3 catalysts

Fe₂O₃/Al₂O₃ catalysts were prepared by solid state reaction method using α-Fe₂O₃ and γ-Al₂O₃ nano powders. The microstructure and surface properties of the catalyst were studied using positron lifetime and coincidence Doppler broadening annihilation radiation measurements. The positron lifetime spectrum shows four components. The two long lifetimes τ₃ and τ₄ are attributed to positronium annihilation in two types of pores distributed inside Al₂O₃ grain and between the grains, respectively. With increasing Fe₂O₃ content from 3 wt% to 40 wt%, the lifetime τ₃ keeps nearly unchanged, while the longest lifetime τ₄ shows decrease from 96 ns to 64 ns. Its intensity decreases drastically from 24% to less than 8%. The Doppler broadening S parameter shows also a continuous decrease. Further analysis of the Doppler broadening spectra reveals a decrease in the p-Ps intensity with increasing Fe₂O₃ content, which rules out the possibility of spin-conversion of positronium. Therefore the decrease of τ₄ is most probably due to the chemical quenching reaction of positronium with Fe ions on the surface of the large pores.     

Al2O3增强的Co2-C98/Al2O3/Si异质结的光伏效应

随着能源危机的加剧,太阳能电池作为开发和利用太阳能的一种普遍形式, 日益受到世界各国的重视.随着太阳能电池向着高效率、薄膜化、无毒性和原材料丰富的方向发展, 单纯的硅系太阳能电池已经无法达到这样的要求,因此新的材料和工艺的开发利用迫在眉睫. 本文研究了碳材料在硅异质节上实现光伏效应的改善及其可能在太阳能电池上的应用. 采用脉冲激光沉积方法制备的Co₂-C₉₈/Al₂O₃/Si异质结构在标准日光照射 (AM1.5, 100 mW/cm²)条件下,可获得0.447 V的开路电压和18.75 mA/cm²的电流密度, 转换效率可达3.27%.通过电容电压特性和暗条件下的电输运性能测量, 证明了氧化铝层的引入不但对单晶硅的表面起到了物理钝化作用,减小了反向漏电流, 使异质结界面缺陷、界面能级和复合中心减少,还起到了场效应钝化作用, 增加了异质结界面的势垒高度,增加了开路电压,使异质结的光伏效应显著增强.     

Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

Sandwich-structure Al₂O₃/HfO₂/Al₂O₃ gate dielectric films were grown on ultra-thin silicon-on-insulator (SOI) substrates by vacuum electron beam evaporation (EB-PVD) method. AFM and TEM observations showed that the films remained amorphous even after post-annealing treatment at 950 °C with smooth surface and clean silicon interface. EDX- and XPS-analysis results revealed no silicate or silicide at the silicon interface. The equivalent oxide thickness was 3 nm and the dielectric constant was around 7.2, as determined by electrical measurements. A fixed charge density of 3 × 10¹⁰ cm⁻² and a leakage current of 5 × 10⁻⁷A/cm² at 2 V gate bias were achieved for Au/gate stack /Si/SiO₂/Si/Au MIS capacitors. Post-annealing treatment was found to effectively reduce trap density, but increase in annealing temperature did not made any significant difference in the electrical performance.     

Esca investigations of some NiO/SiO2 and NiO—Al2 O3 /SiO2 catalysts

The ESCA spectra of a series of NiO/SiO₂ and NiO—Al₂ O₃/SiO₂ catalysts are reported, together with those of some reference compounds. The positions and shapes of the lines, in conjunction with a quantitative surface analysis from relative intensities, allow the identification of different surface phases, e.g. an NiO-like phase in the impregnated catalysts with very low catalytic activity and an Ni talc-like phase in the precipitated catalysts which have higher activity. The addition of Al₂O₃ has a great influence on the surface structure (formation of alumosilicate).     

Functionalization of carbon nanotubes with silver clusters

In this paper, an advanced method of one-step functionalization of single and multi walled carbon nanotubes (SWCNTs and MWCNTs) using γ-irradiation was described. Two synthesis procedures, related with different reduction species, were employed. For the first time, poly(vinyl alcohol) PVA is successfully utilized as a source to reduce silver (Ag) metal ions without having any additional reducing agents to obtain Ag nanoparticles on CNTs. The decoration of carbon nanotubes with Ag nanoparticles takes place through anchoring of (PVA) on nanotube's surface. Optical properties of as-prepared samples and mechanism responsible for the functionalization of carbon nanotubes were investigated using UV-vis and FTIR spectroscopy, respectively. Decorated carbon nanotubes were visualized using microscopic techniques: transmission electron microscopy and scanning tunneling microscopy. Also, the presence of Ag on the nanotubes was confirmed using energy dispersive X-ray spectroscopy. This simple and effective method of making a carbon nanotube type of composites is of interest not only for an application in various areas of technology and biology, but for investigation of the potential of radiation technology for nanoengineering of materials.     

Al2O3/SiO2 films prepared by electron-beam evaporation as UV antireflection coatings on 4H-SiC

Al₂O₃/SiO₂ films have been deposited as UV antireflection coatings on 4H-SiC by electron-beam evaporation and characterized by reflection spectrum, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The reflectance of the Al₂O₃/SiO₂ films is 0.33% and 10 times lower than that of a thermally grown SiO₂ single layer at 276 nm. The films are amorphous in microstructure and characterize good adhesion to 4H-SiC substrate. XPS results indicate an abrupt interface between evaporated SiO₂ and 4H-SiC substrate free of Si-suboxides. These results make the possibility for 4H-SiC based high performance UV optoelectronic devices with Al₂O₃/SiO₂ films as antireflection coatings.     

Enhanced luminescence from transparent Ni-doped MgO–Al2O3–SiO2 glass ceramics by Ga2O3 addition

Transparent Ni²⁺-doped MgO–Al₂O₃–SiO₂ glass ceramics without and with Ga₂O₃ were synthetized. The precipitation of spinel nanocrystals, which was identified as solid solutions in the glass ceramics, could be favored by Ga₂O₃ addition and their sizes were about 7.6 nm in diameter. The luminescent intensity of the Ni²⁺-doped glass ceramics was largely enhanced by Ga₂O₃ addition which could mainly be caused by increasing of Ni²⁺ in the octahedral sites and the reduction of the mean frequency of phonon density of states in the spinel nanocrystals of solid solutions. The full width at half maximum (FWHM) of emissions for the glass ceramics with different Ga₂O₃ content was all more than 200 nm. The emission lifetime increased with the Ga₂O₃ content and the longest lifetime is about 250 μs. The Ni²⁺-doped transparent glass ceramics with Ga₂O₃ addition have potential application as broadband optical amplifier and laser materials.     

Mechanism of the interaction between Al2O3 and SiO2 during the chemical-mechanical polishing of sapphire with silicon dioxide

Chemical-mechanical polishing of sapphire with colloidal silicon dioxide has been studied with X-ray photoelectron spectroscopy. It has been found that aluminum silicate with the composition Al₂SiO₅ is formed on the polished crystal surface. The silicon-containing layer thickness reaches 20.5 nm. Its value decreases in the sequence of samples with (0001), ((10[`1]\bar 12), and (11[`2]\bar 20) and orientations. A mechanism by which Al₂O₃ reacts with SiO₂ has been proposed. It has been revealed that sapphire samples with different crystallographic orientations exhibit an anisotropic rate of material removal. The anisotropy can be explained by a difference in the rate of the formation of intermediate products during chemical interaction between aluminum and silicon oxides on different planes.     

DFT study of structural, electronic and vibrational properties of pure (Al2O3)n (n = 9, 10, 12, 15) and Ni-doped (Al2O3)n (n = 9, 10) clusters

The geometrical, electronic and vibrational properties of pure (Al₂O₃)_n (n = 9, 10, 12, 15) clusters and Ni-doped (Al₂O₃)_9-10 clusters are investigated by density functional theory. There are four different Ni-doped (Al₂O₃)₉ clusters and one Ni-doped (Al₂O₃)₁₀ cluster taken into account. Compared with the pure clusters, the Ni-doped (Al₂O₃)_9-10 clusters have narrower HOMO-LUMO energy gaps. The results indicate that the impurity of Ni atom is mainly responsible for the reduction of the HOMO-LUMO energy gap. One characteristic vibration band at about 1030 cm⁻¹ is found in the vibrational frequencies of the Ni-doped (Al₂O₃)_9-10 clusters, which is caused by the asymmetric Al-O-Al stretching vibration. Another band at around 826 cm⁻¹ involving the characteristic vibration of Ni-O bond is in good agreement with experimental results.     

Farinfrared absorption in Al2O3 and MgO

Far-infrared absorption measurements performed in Al₂O₃ and MgO between 300 and 1 500 K with a Fourier scanning interferometer are reported. A temperature analysis of results based on a phonon self-energy model allows to assign the absorption in this region to 2- and 3-phonon difference processes. The contributions of these processes are separated and discussed. In Al₂O₃, the frequency dependence of the absorption is also analyzed. A good overall agreement between theory and experiment is evidenced.     

亚纳米厚的氧化铝包裹层可以显著提高负载型金纳米颗粒催化剂的热稳定性

负载型金纳米颗粒催化剂在许多催化反应中展现出非常好的催化活性,但是金纳米颗粒在高温等反应条件下容易烧结团聚,极大地限制了金催化剂的应用。利用原子层沉积技术在Au/TiO₂催化剂表面分别精确沉积了一层超薄的二氧化钛和氧化铝包裹层,并对比研究了包裹层对金纳米颗粒的热稳定性影响。原位红外漫反射CO吸附和x-射线光电子能谱数据证实了氧化物包裹层的存在。发现亚纳米厚的氧化铝包裹层能够在600 C完全避免金纳米颗粒的团聚;相反,二氧化钛包裹层对金纳米颗粒稳定性的提高没有明显效果。通过CO氧化探针反应的活性测试,发现随着煅烧温度的升高氧化铝包裹的Au/TiO₂ 催化剂的活性逐渐提高,表明高温处理可以促进被包裹金原子的暴露并表现出催化活性。提供了提高金纳米颗粒稳定性的有效方法,为拓展金催化剂在条件苛刻的反应中的应用奠定了技术基础.