共查询到18条相似文献,搜索用时 109 毫秒
1.
2.
垂直腔面发射半导体微腔激光器 总被引:19,自引:0,他引:19
评述了垂直腔面发射半导体激光器研究的最新进展,就其结构特点、应变量子阱结构、超晶格镜面和微腔效应作了简要的论述,探讨了进一步降低半导体激光器阈值的途径,介绍了新型的氧化约束型垂直腔面发射半导体激光器,并对微腔激光器中自发辐射增强效应和三维封闭腔的特性给出了描述,同时展望了该器件的应用及发展前景。 相似文献
3.
与传统的端发射半导体激光器相比,垂直腔面发射半导体激光器(VCSEL)具有可单模输出,光束对称性好,可被高度聚焦,进入光纤的耦合效率极高和有利于大规模二维列阵等优 点.为了得到高功率的激光输出,除了要增大VCSEL的发射面积之外,关键的是要选择适 当的量子阱层数、有源区电流密度的均匀分布和良好的热管理等.本文详细研究和分析了高功率VCSEL有源区量子阱层数,有源区直径,材料的热导和电阻,电极间距等对VCSEL 器件性能的影响.通过优化参数,进行最佳设计,研制出了980 nm In0.2Ga0.8As/Ga
关键词:
垂直腔面发射激光器(VCSEL)
量子阱
高功率 相似文献
4.
5.
设计并研制了室温连续工作的单模13 μm垂直腔面发射激光器(VCSEL),阈值电流为051 mA,最高连续工作温度达到82℃,斜率效率为029 W/A.采用InAsP/InGaAsP应变补偿多量子阱作为有源增益区,由晶片直接键合技术融合InP基谐振腔和GaAs基GaAs/Al(Ga)As分布布拉格下反射腔镜,并由电子束蒸发法沉积SiO2/TiO2介质薄膜上反射腔镜形成13 μm VCSEL结构.讨论并分析了谐振腔模式与量子阱增益峰相对位置对器件性能的影响.
关键词:
垂直腔面发射激光器
晶片直接键合
应变补偿多量子阱 相似文献
6.
7.
建立了一种适用于多量子阱和多有源区的多层速率方程模型. 通过小信号分析,得到了光子密度、载流子俘获、逃逸和隧穿时间等关键参数对单有源区和隧道再生双有源区垂直腔面发射激光器频率响应特性的影响,并分析了在相同驱动电流下隧道再生双有源区器件调制带宽大于单有源区器件的原因. 进一步研究了隧道再生双有源区内腔接触氧化限制型垂直腔面发射激光器的寄生电参数及其寄生电路,对其频率响应进行了模拟分析.
关键词:
垂直腔面发射激光器
速率方程
调制特性
隧道再生 相似文献
8.
通过测量、对比材料生长和器件制备条件基本相似,但是谐振腔腔模波长与增益峰值波长相对位置明显不同的两类氧化物限制型应变AlInGaAs/AlGaAs量子阱垂直腔面发射激光器(VCSEL)在261—369K温度范围内输出光功率-电流的变温曲线,同时结合测试得到的两类样品的白光反射谱、光荧光谱以及模拟计算得到的不同温度下VCSEL反射谱和增益谱,分析了输出光功率、阈值电流、斜率效率和激射波长随温度变化的关系,掌握了新材料AlInGaAs的温度特性,得到了谐振腔腔模波长和增益峰值波长的相对位置对VCSEL输出特性,尤其是对阈值的影响规律,指出获得室温工作阈值最低且稳定的VCSEL的一个方法是调整谐振腔腔模波长和增益峰值波长的相对位置,并利用这种方法获得了特征温度T0=333K的AlInGaAs/AlGaAs量子阱VCSEL器件.
关键词:
AlInGaAs
垂直腔面发射激光器
特征温度 相似文献
9.
结合垂直腔面发射激光器(VCSEL)原理以及量子点增益特点,计算了有源层p掺杂结构的量子点VCSEL的材料增益和3 dB带宽,发现p掺杂结构可以大大提高频率特性.结合VCSEL激射条件和阈值特性,分析了对VCSEL结构的要求;分析了分布参数对频率特性的影响,对其外部封装提出了要求.设计了高频率响应的含氧化限制层的1.3 μm量子点VCSEL结构.
关键词:
量子点
垂直腔面发射激光器
微分增益
3 dB带宽 相似文献
10.
11.
Controlling spontaneous emission and threshold-less laser oscillation with optical microcavities 总被引:10,自引:0,他引:10
H. Yokoyama K. Nishi T. Anan Y. Nambu S. D. Brorson E. P. Ippen M. Suzuki 《Optical and Quantum Electronics》1992,24(2):S245-S272
We describe the alteration of spontaneous emission of materials in optical microcavities having dimensions on the order of the emitted wavelength. Particular attention is paid to one-dimensional optical confinement structures with pairs of planar reflectors (planar microcavities). The presence of the cavity causes great modifications in the emission spectrum and spatial emission intensity distribution accompanied by changes in the spontaneous emission lifetime. Experimental results are shown for planar microcavities containing GaAs quantum wells or organic dye-embedded Langmuir-Brodgett films as light emitting layers. Also discussed are the laser oscillation properties of microcavities. A remarkable increase in the spontaneous emission coupling into the laser oscillation mode is expected in microcavity lasers. A rate equation analysis shows that increasing the coupling of spontaneous emission into the cavity mode causes the disappearance of the lasing threshold in the input-output curve. Experimentally verification is presented using planar optical microcavities confining an organic dye solution. The coupling ratio of spontaneous emission into a laser mode increases to be as large as 0.2 for a cavity having a half wavelength distance between a pair of mirrors. At this point, the threshold becomes quite fuzzy. Differences between the spontaneous emission dominant regime and the stimulated emission dominant regime are examined with emission spectra and emission lifetime analyses. 相似文献
12.
D. Zhao C. Zhou Y. Zhang L. Shi X. Jiang 《Applied physics. B, Lasers and optics》2008,91(3-4):475-478
We present the research of a type of vertical cavity-surface emitting photonic crystal laser with a periodically modulated surface. The proper modulation to the cavity surface changes nonradiative surface modes into radiative ones and the constructive interference of the radiative waves results in the vertical surface emission. The numerical investigation of such cavities shows that, for a cavity with a definite length, resonant frequencies and their quality factors mainly depend on the magnitude of the corrugated surface. Furthermore, the simulation of the lasing processes demonstrates the features of this type of laser, such as vertical surface emitting, flat wavefront and single mode operation which is robust. 相似文献
13.
Center wavelength shift of vertical cavity surface emitting laser light in arrayed waveguide gratings is verified with mathematical and experimental analysis.It is induced by the linearly increasing trend of optical power of vertical cavity surface emitting laser by bias current increase.It is retrieved effectively to the original center wavelength by simple correction method of compensation.This was done for application of vertical cavity surface emitting laser as a light source in optical line terminal of wavelength division multiplexing-passive optical network. 相似文献
14.
Susanne I. Hintschich Hannes Gothe Vadim G. Lyssenko Hartmut Fröb Karl Leo 《Optical and Quantum Electronics》2008,40(5-6):397-402
In this work we study the input–output characteristics of an organic vertical cavity surface emitting laser (OVCSEL) with an active layer of Alq3:DCM over 3 orders of magnitude in pump intensity. We find that lasing from this standard inhomogeneously broadened gain medium cannot be described using a single lasing threshold value. Instead, an inhomogeneously broadened distribution of spontaneous emission factors, beta, must be employed in order to correctly model the measured input–output characteristics. 相似文献
15.
16.
Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
This paper demonstrates experimentally and numerically that a significant modification of spontaneous emission rate can be achieved near the surface of a three-dimensional photonic crystal.In experiments,semiconductor core-shell quantum dots are intentionally confined in a thin polymer film on which a three-dimensional colloidal photonic crystal is fabricated.The spontaneous emission rate of quantum dots is characterised by conventional and time-resolved photoluminescence (PL) measurements.The modification of the spontaneous emission rate,which is reflected in the change of spectral shape and PL lifetime,is clearly observed.While an obvious increase in the PL lifetime is found at most wavelengths in the band gap,a significant reduction in the PL lifetime by one order of magnitude is observed at the short-wavelength band edge.Numerical simulation reveals a periodic modulation of spontaneous emission rate with decreasing modulation strength when an emitter is moved away from the surface of the photonic crystal.It is supported by the fact that the modification of spontaneous emission rate is not pronounced for quantum dots distributed in a thick polymer film where both enhancement and suppression are present simultaneously.This finding provides a simple and effective way for improving the performance of light emitting devices. 相似文献
17.
Jacquemet M Picqué N Guelachvili G Garnache A Sagnes I Strassner M Symonds C 《Optics letters》2007,32(11):1387-1389
A room-temperature-operating vertical external cavity surface emitting laser is applied around 1550 nm to intracavity laser absorption spectroscopy analyzed by time-resolved Fourier-transform interferometry. At an equivalent path length of 15 km, the high-resolution spectrum of the semiconductor disk laser emission covers 17 nm simultaneously. A noise-equivalent absorption coefficient at 1 s averaging equal to 1.5 x 10(-10) cm(-1)Hz(-1/2) per spectral element is reported for 65 km, the longest path length employed. 相似文献
18.
We introduce a periodical perturbation to realize photonic crystal vertical cavity surface emitting laser cavities based on surface modes (PCSM-VCSEL) and to enhance their quality factor. Different from the early reported direct periodical modulation to the cavity surface, a periodical perturbation under the surface can also result in the vertical emission due to the beaming effect. It is more important that this perturbation causes less energy diffraction loss or light output because the perturbation is imposed on not the center but the tail of the field of surface modes. Therefore, this modulation method greatly improves the quality factor of such PCSM-VCSEL cavities, which is favorable to their realization in practice. The numerical results demonstrate their characteristics and good performances in the application as light sources. 相似文献