Recombination probabilities for oxygen atoms on a polyethylene terephthalate surface

By measuring the intensity of oxygen-plasma emission at λ=777 nm, the authors estimate the relative probabilities of heterogeneous oxygen-atom recombination (G₀/G_gl) on the surface of a polyethylene terephthalate polymer film. It is established that the main products of plasma decomposition of polyethylene terephthalate are CO, CO₂, and H₂O. Deceased. Ivanovo State Chemical-Engineering Academy, 7, F. Engel’s Ave., Ivanovo, 153460, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 6, pp. 784–788, November–December, 1997.     

载能氢原子与石墨(001)面碰撞过程中的能量传递行为的分子动力学研究

本文采用分子动力学方法研究了单一载能氢原子与石墨碰撞时氢原子被石墨反射、 吸附和石墨被氢原子穿透的发生系数以及碰撞中的能量传递机理. 研究发现: 与单层石墨相比, 多层石墨之间的长程相互作用增加了氢原子发生反射的能量范围, 尤其当入射能量大于20.0 eV时, 对反射过程的影响很明显; 当氢原子的入射能量大于25.0 eV时, 有一定的概率穿透四层石墨; 当氢原子入射能量高于28.0 eV时, 载能氢原子的能量传递给第二层石墨烯的比传递给第一层石墨烯的多. 这些结果对理解聚变反应中, 碳基材料的化学腐蚀及氚滞留有重要意义.     

氩气电弧等离子体炬提纯大鳞片石墨研究

石墨材料作为一种工业原料,特别是纯度在99.9%以上的高纯石墨被应用在各大高科技领域,现有物理法和化学法的石墨提纯技术成本高、酸碱对设备和环境破坏严重、工艺流程复杂,因此开发一种优良有效的石墨提纯技术,已成为近年来国内外研究的热点。建立了一种利用非转移电弧等离子体炬提纯大鳞片石墨的方法,利用电弧可快速产生高温的特性,对黑龙江省鸡西市纯度为94.18%的大鳞片石墨样品进行高温处理。研究显示在本文电弧装置下提纯石墨的最佳放电参数范围气流量为25 L/min、电流为400 A、功率为10 kW,此时的电弧表面温度高达3350 ℃,利用扫描电子显微镜等对电弧处理前后石墨样品的微观结构对比发现石墨样品出现粉碎、断裂等特点,根据石墨化学分析方法国家标准GB/T 3521 2008对石墨纯度及其杂质进行研究分析,经电弧处理后石墨纯度提高到99.21%。     

Effects of hydrogen plasma treatment on SnO2:F substrates for amorphous Si thin film solar cells

We investigated the effects of hydrogen plasma treatment on the physical and electrical properties of fluorine-doped tin oxide (FTO) films used for amorphous silicon (a-Si) thin film solar cells. A slight increase in carrier concentration by the hydrogen doping effect was observed for the FTO film exposed to the hydrogen plasma for 5 min. For further exposure to the plasma, the chemical reduction became prominent and resulted in deterioration of the electrical and optical properties of the film. XPS analysis revealed that the chemical reduction of SnO₂ to Sn metallic state occurs on the surface region. It was found that the defects formed by hydrogen plasma act as recombination centers at the interface between FTO electrode and p-layer of a-Si solar cells. This phenomenon resulted in the deterioration of the cell performance. The averaged conversion efficiency (6.82%) of the cells on pristine FTO hydrogen substrate was decreased to 5.81% for the cells on FTO treated for 5 min, which is mainly attributed to the decrease in short-circuit current density.     

Visualization of human plasma fibrinogen adsorbed on highly oriented pyrolytic graphite by scanning probe microscopy

Human plasma fibrinogen (HPF) was observed by atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) conducted in non-contact mode. The HPF was adsorbed on a highly oriented pyrolytic graphite (HOPG) substrate as single molecules, as aggregated bundles, and as aggregated fibers. Topographic and phase images confirmed structural changes in the HPF after exposure to air, while topographic and KPFM images confirmed fibers with the width of a single HPF molecule. Additionally, KPFM confirmed the surface potential difference between the HPF and the HOPG, and periodical potential drop reflecting the E and D domains in the fiber.     

射频功率对氢气与反式二丁烯的低压电感耦合等离子体的影响（英）

利用等离子体聚合技术制备的GDP壳层是目前ICF靶丸的主要烧蚀层材料。为了了解GDP薄膜沉积过程中的CH等离子体的状态,采用朗缪尔探针和质谱仪对C4H8/H2等离子体的组分和状态参数进行了诊断,并对等离子体的电子能量分布函数、电子密度、电子温度等进行了深入分析。同时讨论了等离子体状态与放电参数之间的关系。研究发现,射频功率对等离子体参数有明显的影响。从10 W到35 W,电子密度正比于射频功率。随着射频功率的增加,在两步电离机制作用下,电子温度和等离子体电势呈现先减小后增大的变化趋势。另外,在高气压下,质谱诊断中发现了大量的稳定的小质量碎片离子,这表明在高气压下等离子体气相中的离子碎片聚合反应被抑制。     

The kinetics of Cr layer coated on TiNi films for hydrogen absorption

The effect of hydrogen absorption on electrical resistance with temperature for TiNi and TiNi-Cr thin films was investigated. The TiNi thin films of thickness 800 Å were deposited at different angles (? = 0°, 30°, 45°, 60° and 75°) under 10^?5 Torr pressure by thermal evaporation on the glass substrate at room temperature. A layer of Cr of thickness 100 Å was coated on the TiNi thin films. The changing rate of hydrogen absorption increases after Cr layer coating because Cr enhances the catalytic properties of hydrogen absorption in thin films. The rate of hydrogen absorption increases with temperature at lower range but at higher range of temperature it was found to decrease and also it was found that the hydrogen absorption increases with angle of deposition.     

Predictive estimation of vacuum ultraviolet emission intensity in a low-pressure inductively coupled hydrogen plasma based on the branching ratio technique

Vacuum ultraviolet (VUV) emission has recently attracted attention in low pressure processing plasmas because of the possibility of high-energy photon damages on the substrates. To quantify the VUV induced damages during the plasma processes, it is need to use of a VUV spectrometer equipped with vacuum systems not readily available in industries. In this work, therefore, we report a simple method to estimate the VUV emission intensity of hydrogen plasmas utilizing a conventional visible spectrometer widely used in plasma processes. From the measurement of hydrogen emission spectra in the visible wavelength region, the VUV emission line (Lyman-β) was calculated using the branching ratio technique and enabled the estimation of Lyman-α emission intensity based on the Boltzmann relation with given plasma parameters. In addition, it was found that the method could also predict the VUV emission intensity for high density hydrogen plasma cases by considering the self-absorption effect by hydrogen atoms.     

Phosphorus and hydrogen atoms on the (0 0 1) surface of silicon: A comparative scanning tunnelling microscopy study of surface species with a single dangling bond

We present a comparative scanning tunnelling microscopy (STM) study of two features on the Si(0 0 1) surface with a single dangling bond. One feature is the Si-P heterodimer—a single surface phosphorus atom substituted for one Si atom of a Si-Si dimer. The other feature is the Si-Si-H hemihydride—a single hydrogen atom adsorbed to one Si atom of a Si-Si dimer. Previous STM studies of both surface species have reported a nearly identical appearance in STM which has hampered an experimental distinction between them to date. Using voltage-dependent STM we are able to distinguish and identify both heterodimer and hemihydride on the Si(0 0 1) surface. This work is particularly relevant for the fabrication of atomic-scale Si:P devices by STM lithography on the hydrogen terminated Si(0 0 1):H surface, where it is important to monitor the distribution of single P dopants in the surface. Based on the experimental identification, we study the lateral P diffusion out of nanoscale reservoirs prepared by STM lithography.     

Quantum states of hydrogen (H, D, T) atoms on Cu(1 0 0) and (1 1 0) surfaces

We investigate the quantum mechanical behavior of adsorbed hydrogen (H, D, T) on Cu(1 0 0) and (1 1 0) surfaces. We construct potential energy surfaces (PESs) for the motion of the hydrogen H atom on Cu(1 0 0) and (1 1 0) surfaces within the framework of density functional theory. The potential energy takes a minimum value on the hollow site of Cu(1 0 0) and on the short bridge site of Cu(1 1 0). Moreover, we calculate the quantum states of hydrogen atom motion on these calculated PESs. The ground state wave function of the hydrogen atom motion is strongly localized around the hollow site on the Cu(1 0 0) surface. On the other hand, the ground state wave function of the hydrogen atom motion on Cu(1 1 0) is distributed from the short bridge site to two neighboring pseudo-threefold sites. We finally show isotope effects on the quantum states of the motion of hydrogen on both surfaces.