Improved electrical properties of silicon-incorporated anodic niobium oxide formed on porous Nb-Si substrate

In the present study, porous Nb-Si alloy films with isolated nano-column morphology have been successfully developed by oblique angle magnetron sputtering on to aluminum substrate with concave cell structure. The deposited films are amorphous with the 15 at% silicon supersaturated into niobium. The porous Nb-15 at% Si films, as well as niobium films with similar morphology, are anodized at several voltages up to 50 V in 0.1 mol dm⁻³ ammonium pentaborate electrolyte. Due to the presence of sufficient gaps between neighboring columns, the gaps are not filled with anodic oxide, despite the large Pilling-Bedworth ratio (for instance, 2.6 for Nb/Nb₂O₅) and hence, a linear correlation between the reciprocal of capacitance and formation voltage is obtained for the Nb-15 at% Si. From the comparison with the anodic films formed on porous niobium films, it has been found that silicon addition improves the thermal stability of anodic niobium oxide; the change in capacitance and increase in leakage current become small for the Nb-Si. The findings indicate the potential of oblique angle deposition to tailor porous non-equilibrium niobium alloy films for high performance niobium-base capacitor.     

Structural-optical study of high-dielectric-constant oxide films

High-k polycrystalline Pr₂O₃ and amorphous LaAlO₃ oxide thin films deposited on Si(0 0 1) are studied. The microstructure is investigated using X-ray diffraction and scanning electron microscopy. Optical properties are determined in the 0.75-6.5 eV photon energy range using spectroscopic ellipsometry. The polycrystalline Pr₂O₃ films have an optical gap of 3.86 eV and a dielectric constant of 16-26, which increases with film thickness. Similarly, very thin amorphous LaAlO₃ films have the optical gap of 5.8 eV, and a dielectric constant below 14 which also increases with film thickness. The lower dielectric constant compared to crystalline material is an intrinsic characteristic of amorphous films.     

Dielectric properties of continuous composition spreaded MgO-Ta2O5 thin films

The dielectric properties of MgO-Ta₂O₅ continuous composition spread (CCS) thin films were investigated. The MgO-Ta₂O₅ CCS thin films were deposited on Pt/Ti/SiO₂/Si substrates by off-Axis RF magnetron sputtering system, and then the films were annealed at 350 °C with rapid thermal annealing system in vacuum. The dielectric constant and loss of MgO-Ta₂O₅ CCS thin films were plotted via 1500 micron-step measuring. The specific point of Ta₂O₅-MgO CCS thin film (post annealed at 350 °C) showing superior dielectric properties of high dielectric constant (k ∼ 28) and low dielectric loss (tan δ < 0⋅004) at 1 MHz were found in the area of 3-5 mm apart from Ta₂O₅ side on the substrate. The cation's composition of thin film was Mg:Ta = 0.4:2 at%.     

Sputtered amorphous Co-Pt-P thin films for soft underlayer of perpendicular magnetic recording

In this paper, a novel amorphous Co-Pt-P thin film fabricated by DC sputtering was proposed for soft underlayer in perpendicular recording. The structural and magnetic properties of the films were investigated by X-ray diffraction (XRD) and vibrating sample magnetometer (VSM), respectively. The results show that maximum permeability of Co-12 at%Pt-P films sputtered at room temperature (RT) is quite low when the phosphorus content is less than 5.2 at%, but Co-12 at%Pt-7 at%P thin film, is of amorphous state and has a high permeability of ∼500. The excellent soft magnetic properties of maximum permeability (500), coercivity (18 Oe) and saturation magnetization (760 emu/cm³) indicate that the amorphous Co-12 at%Pt-7 at%P film is expected to be a promising soft magnetic underlayer of perpendicular magnetic recording. The Co-12 at%Pt-7 at%P thin film is gradually crystallized with increasing substrate temperatures. The crystallization temperature of the Co-12 at%Pt-7 at%P thin film is ∼200 °C.     

Microstructure and mechanical properties of Ag-containing diamond-like carbon films in mid-frequency dual-magnetron sputtering

Seven diamonds-like carbon (Ag-DLC) films with different Ag contents were deposited on (1 0 0) Si substrate in a mid-frequency dual-magnetron system. Studies were performed to investigate the influence of the Ag content and nanograin size on the microstructure and mechanical properties of the films. Results showed: (i) the dispersion of Ag nanocrystallites within the amorphous DLC matrix, and the tendency for the size of the Ag nanocrystallite to increase with the Ag content; (ii) the exhibition of higher hardness, lower intrinsic stress and better adhesion for the films with Ag content ranging between 7.4 and 12.5 at% when compared with the films of Ag content in range of 16.8-24.7 at%; and (iii) the achievement of the best mechanical properties for the film deposited with 9.6 at% Ag.     

Comparison study on structure of Si and Cu doping CrN films by reactive sputtering

CrN, CrSiN and CrCuN films were deposited by DC magnetron reactive sputtering with hot pressed pure Cr, CrSi, and CrCu targets, respectively. As substrate bias increased from −50 V to −200 V, the preferred orientation of CrN films changed from (1 1 1) to (2 0 0). And the Si doping did not change this condition. However, the Cu doping films kept (2 0 0) orientation all along. CrN films presented typical columnar structure, and the alloying of Si and Cu could restrain columnar growth leading to dense structure. The CrSiN film was composed of nanocrystallites distributed in amorphous Si₃N₄, while no amorphous phase existed in CrCuN films.     

Electrodeposition and magnetic properties of Ni nanowire arrays on anodic aluminum oxide/Ti/Si substrate

Ni nanowire arrays with different diameters have now been extended to directly fabricate in porous anodic alumina oxide (AAO) templates on Ti/Si substrate by direct current (DC) electrodeposition. An aluminum film is firstly sputter-deposited on a silicon substrate coated with a 300 nm Ti film. AAO/Ti/Si substrate is synthesized by a two-step electrochemical anodization of the aluminum film on the Ti/Si substrate and then used as template to grow Ni nanowire arrays with different diameters. The coercivity and the squareness in parallel direction of Ni nanowires with about 10 nm diameters are 664 Oe and 0.90, respectively. The Ni nanowire arrays fabricated on AAO/Ti/Si substrates should lead to practical applications in ultrahigh-density magnetic storage devices because of the excellent properties.     

Effect of film thickness on interface and electric properties of BiFeO3 thin films

Bismuth ferrite (BFO) thin films were fabricated by RF-magnetron sputtering deposition method on Pt/Ti/SiO₂/Si(1 0 0) substrate. The effect of the thickness of BFO films varying from 85 to 280 nm on electrical properties was investigated. Saturated coercive fields were found to increase with the BFO film thickness. The dielectric constant of BFO thin films measured at 1 kHz decreased with decreasing thickness from 98 to 86, while tangent losses increased from 0.013 to 0.021. The presence of bismuth oxide at the interface between BFO films and Pt bottom electrodes was responsible for the high leakage currents in thin BFO thin films as was demonstrated by X-ray diffraction, grazing-incident X-ray diffraction, and secondary ion mass spectroscopy analysis.     

Growth and characterization of β-SiC films obtained by fs laser ablation

We achieved the growth of cubic silicon carbide (SiC) films on (1 0 0)Si substrates by pulsed laser deposition (PLD) at moderate temperatures such as 750 °C, from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), conventional and high-resolution transmission electron microscopy (TEM/HRTEM). The morphology of deposited films is dominated by columns nucleated from a thin nanostructured beta silicon carbide (β-SiC) interface layer. The combined effects of columnar growth, tilted facets of the emerging columns and the presence of particulates on the film surface, lead to a rather rough surface of the films.     

Characterization and structure study of the anodic oxide film on Zircaloy-4 synthesized using NaOH electrolytes at room temperature

Thick crystalline zirconium oxide films were synthesized on Zircaloy-4 substrates by anodic oxidation at room temperature in NaOH solution with a stable applied voltage (300 V). The film is approximately 4.7 μm in thickness. The XPS and SEM analysis shows that the film is a three-layer structure in water, hydroxide and oxide parts. The thickness of that order is ∼0.01 μm, ∼1 μm, ∼3.7 μm, respectively. The oxide layer is composed of tetragonal and monoclinic phases with the volume ratio about 0.2. Furthermore, the thick anodic film acts as a barrier to oxygen and zirconium migrations. It effectively protects zirconium alloys against the worse corrosion. An extremely low passive current density of ∼0.018 μA/cm² and a low oxidation weight gain of ∼0.411 mg/cm² were also observed in the films.     

Electrochemical and surface behavior of hydyroxyapatite/Ti film on nanotubular Ti-35Nb-xZr alloys

In this paper, we investigated the electrochemical and surface behavior of hydroxyapatite (HA)/Ti films on the nanotubular Ti-35Nb-xZr alloy. The Ti-35Nb-xZr ternary alloys with 3-10 wt.% Zr content were made by an arc melting method. The nanotubular oxide layers were developed on the Ti-35Nb-xZr alloys by an anodic oxidation method in 1 M H₃PO₄ electrolyte containing 0.8 wt% NaF at room temperature. The HA/Ti composite films on the nanotubular oxide surfaces were deposited by a magnetron sputtering method. Their surface characteristics were analyzed by field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDS) and an X-ray diffractometer (XRD). The corrosion behavior of the specimens was examined through potentiodynamic and AC impedance tests in 0.9% NaCl solution. From the results, the Ti-35Nb-xZr alloys showed a solely β phase microstructure that resulted from the addition of Zr. The nanotubular structure formed with a diameter of about 200 nm, and the HA/Ti thin film was deposited on the nanotubular structure. The HA/Ti thin film-coated nanotubular Ti-35Nb-xZr alloys showed good corrosion resistance in 0.9% NaCl solution.     

Evolution of surface morphology of NiO thin films under swift heavy ion irradiation

NiO nanoparticle thin films grown on Si substrates were irradiated by 107 MeV Ag⁸⁺ ions. The films were characterized by glancing angle X-ray diffraction and atomic force microscopy. Ag ion irradiation was found to influence the shape and size of the nanoparticles. The pristine NiO film consisted of uniform size (∼100 nm along major axis and ∼55 nm along minor axis) elliptical particles, which changed to also of uniform size (∼63 nm) circular shape particles on irradiation at a fluence of 3 × 10¹³ ions cm⁻². Comparison of XRD line width analysis and AFM data revealed that the particles in the pristine films are single crystalline, which turn to polycrystalline on irradiation with 107 MeV Ag ions.     

Formation of silicon nanodots from dysprosium-doped amorphous SiCxOy films grown by hot-filament assisted chemical vapor deposition of CH3SiH3 and Dy(DPM)3 gas jets

We report on Si nanodot formation by chemical vapor deposition (CVD) of ultrathin films and following oxidation. The film growth was carried out by hot-filament assisted CVD of CH₃SiH₃ and Dy(DPM)₃ gas jets at the substrate temperature of 600 °C. The transmission electron microscopy observation and X-ray photoelectron spectroscopy analysis indicated that ∼35 nm Dy-doped amorphous silicon oxycarbide (SiC_xO_y) films were grown on Si(1 0 0). The Dy concentration was 10-20% throughout the film. By further oxidation at 860 °C, the smooth amorphous film was changed to a rough structure composed of crystalline Si nanodots surrounded by heavily Dy-doped SiO₂.     

Enhanced field emission from Si doped nanocrystalline AlN thin films

Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 °C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E_to) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm² has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.     

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

La-doped HfO₂ gate dielectric thin films have been deposited on Si substrates using La(acac)₃ and Hf(acac)₄ (acac = 2,4-pentanedionate) mixing sources by low-pressure metal-organic chemical vapor deposition (MOCVD). The structure, thermal stability, and electrical properties of La-doped HfO₂ films have been investigated. Inductive coupled plasma analyses confirm that the La content ranging from 1 to 5 mol% is involved in the films. The films show smaller roughness of ∼0.5 nm and improved thermal stability up to 750 °C. The La-doped HfO₂ films on Pt-coated Si and fused quartz substrates have an intrinsic dielectric constant of ∼28 at 1 MHz and a band gap of 5.6 eV, respectively. X-ray photoelectron spectroscopy analyses reveal that the interfacial layer is Hf-based silicate. The reliable value of equivalent oxide thickness (EOT) around 1.2 nm has been obtained, but with a large leakage current density of 3 A/cm² at V_g = 1V + V_fb. MOCVD-derived La-doped HfO₂ is demonstrated to be a potential high-k gate dielectric film for next generation metal oxide semiconductor field effect transistor applications.     

Influence of MgO and ZrO2 buffer layers on dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel processing

Ba(Zr_0.20Ti_0.80)O₃ (BZT) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si, MgO and ZrO₂ buffered Pt(1 1 1)/Ti/SiO₂/Si substrates by a sol-gel process. The BZT thin films directly grown on Pt(1 1 1)/Ti/SiO₂/Si substrates exhibit highly (1 1 1) preferred orientation, while the films deposited on Pt(1 1 1)/Ti/SiO₂/Si substrates with MgO and ZrO₂ buffer layers show highly (1 1 0) preferred orientation. At 100 kHz, dielectric constants are 417, 311 and 321 for the BZT thin films grown on Pt(1 1 1)/Ti/SiO₂/Si, MgO and ZrO₂ buffered Pt(1 1 1)/Ti/SiO₂/Si substrates, respectively. The difference in dielectric properties of three BZT films can be attributed to the series capacitance effect, interface conditions and their orientations.     

Characterization of native and anodic oxide films formed on commercial pure titanium using electrochemical properties and morphology techniques

Potentiostatically anodized oxide films on the surface of commercial pure titanium (cp-Ti) formed in sulfuric (0.5 M H₂SO₄) and in phosphoric (1.4 M H₃PO₄) acid solutions under variables anodizing voltages were investigated and compared with the native oxide film. Potentiodynamic polarization and electrochemical impedance spectroscopy, EIS, were used to predicate the different in corrosion behavior of the oxide film samples. Scanning electron microscope, SEM, and electron diffraction X-ray analysis, EDX, were used to investigate the difference in the morphology between different types of oxide films. The electrochemical characteristics were examined in phosphate saline buffer solution, PSB (pH 7.4) at 25 °C. Results have been shown that the nature of the native oxide film is thin and amorphous, while the process of anodization of Ti in both acid solutions plays an important role in changing the properties of passive oxide films. Significant increase in the corrosion resistance of the anodized surface film was recorded after 3 h of electrode immersion in PSB. On the other side, the coverage (θ) of film formed on cp-Ti was differed by changing the anodized acid solution. Impedance results showed that both the native film and anodized film formed on cp-Ti consist of two layers. The resistance of the anodized film has reached to the highest value by anodization of cp-Ti in H₃PO₄ and the inner layer in the anodized film formed in both acid solutions is also porous.     

Structure, dielectric and ferroelectric properties of highly (1 0 0)-oriented BaTiO3 grown under low-temperature conditions

The highly (1 0 0)-oriented BaTiO₃ thin films were fabricated on LaNiO₃(1 0 0)/Pt/Ti/SiO₂/Si substrates under low-temperature conditions. Substrate temperatures throughout the fabrication process remained at or below 400 °C, which allows this process to be compatible with many materials commonly used in integrated circuit manufacturing. X-ray diffraction data provided the evidence for single BaTiO₃ phase. Field-emission scanning electron microscopy was used to study the columnar structure of the films. The dielectric properties as a function of frequency in the range of 1 kHz to 1 MHz was obtained. The room temperature remanent polarization (2P_r) and coercive field were found to be ∼5 μC/cm² and 50 kV/cm, respectively. The BTO film maintains an excellent fatigue-free character even after 10⁹ switching cycles.     

Preparation and characterization of pulsed laser deposition (PLD) SiC films

Si K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer at a substrate temperature of 250 °C in high vacuum with a laser fluence of ∼5 J/cm². The results reveal that the film contains mainly a SiC phase with an amorphous structure in which the Si atoms are bonded to C atoms in its first shell similar to that of crystalline SiC powder but with significant disorder.     

Microstructural characterization of Ti-C-N thin films prepared by reactive crossed beam pulsed laser deposition

In this work, Raman spectroscopy has been used to characterize Ti-C-N thin films in order to obtain information about the microstructure of the deposited materials, and in particular to study the effects due to the carbon incorporation into the TiN lattice. Ti-C-N thin films were prepared using a crossed plasma configuration in which the ablation of two different targets, titanium and carbon, in a reactive atmosphere was performed. With this configuration, the carbon content in the films was varied in an easy way from 5.0 at% to 40.0 at%. Thin film composition was determined from Non-Rutherford Backscattering Spectroscopy (NRBS) measurements. X-ray photoelectron spectroscopy and X-Ray diffraction measurements were also carried out in order to characterize the films in more detail, with this being used to give support to the interpretation of the Raman spectra. The Raman results revealed that at lower carbon concentrations a solid solution Ti(C, N) is formed, whilst at higher carbon concentrations a nanocomposite, consisting of nanocrystalline TiCN and TiC immersed in an amorphous carbon matrix is obtained.