高电荷态ECR离子源

介绍了目前ECR离子源的发展状况和国际上几台典型的ECR离子源.Electron cyclotron resonance (ECR) ion source is the most efficient facility for producing highly charged ions. So far more than 1 emA of O 6+ and 0.02 eμA of U 55+ have been delivered by ECR ion source. In this paper the latest development of ECR ion source is presented and several typical ECR ion sources in the world is introduced.     

Interaction between plasma and electromagnetic field in ion source of 10 cm ECR ion thruster

Through diagnosing the plasma density and calculating the intensity of microwave electric field, four 10 cm electron cyclotron resonance (ECR) ion sources with different magnetic field structures are studied to reveal the inside interaction between the plasma, magnetic field and microwave electric field. From the diagnosing result it can be found that the plasma density distribution is controlled by the plasma generation and electron loss volumes associated with the magnetic field and microwave power level. Based on the cold plasma hypothesis and diagnosing result, the microwave electric field intensity distribution in the plasma is calculated. The result shows that the plasma will significantly change the distribution of the microwave electric field intensity to form a bow shape. From the boundary region of the shape to the center, the electric field intensity varies from higher to lower and the diagnosed density inversely changes. If the bow and its inside lower electric field intensity region are close to the screen grid, the performance of ion beam extracting will be better. The study can provide useful information for the creating of 10 cm ECR ion source and understanding its mechanism.     

Influence of the surface-termination of hexagonal SiC(0 0 0 1) on the temperature dependences of Ge growth modes and desorption

With the aim of comparing initial Ge adsorption and desorption modes on different surface terminations of 4H-SiC(0 0 0 1) faces, 3 × 3, √3×√3R30° (R3) and 6√3×6√3R30° (6R3) reconstructions, of decreasing Si surface richness, have been prepared by standard surface preparation procedures. They are controlled by reflection high energy electron diffraction (RHEED), low energy electron diffraction and photoemission. One monolayer of Ge has been deposited similarly at room temperature on each of these three surfaces, followed by the same set of isochronal heatings at increasing temperatures up to complete Ge desorption. At each step of heating, the structural and chemical status of the Ge ad-layer has been probed. Marked differences between the Si- (3 × 3 and R3) and C-rich (6R3) terminations have been obtained. Ge wetting layers are only obtained up to 400 °C on 3 × 3 and R3 surfaces in the form of a 4 × 4 reconstruction. The wetting is more complete on the R3 surface, whose atomic structure is the closest to an ideally Si-terminated 1 × 1 SiC surface. At higher temperatures, the wetting layer stage transiets in Ge polycrystallites followed by the unexpected appearance on the 3 × 3 surface of a more ordered Si island structure. It denotes a Si clustering of the initial Si 3 × 3 excess, induced by the presence of Ge. A phase separation mechanism between Si and Ge prevails therefore over alloying by Ge supply onto a such Si-terminated 3 × 3 surface. Conversely, no wetting is obtained on the 6R3 surface and island formation of exclusively pure Ge takes place already at low temperature. These islands exhibit a better epitaxial relationship characterized by Ge(1 1 1)//SiC(0 0 0 1) and Ge〈1 1 −2〉//SiC〈1 −1 0 0〉, ascertained by a clear RHEED spot pattern. The absence of any Ge-C bond signature in the X-ray photoelectron spectroscopy Ge core lines indicates a dominant island nucleation on heterogeneous regions of the surface denuded by the 6R3 graphite pavings. Owing to the used annealing cycles, the deposited Ge amount desorbs on the three surfaces at differentiated temperatures ranging from 950 to 1200 °C. These differences probably reflect the varying morphologies formed at lower temperature on the different surfaces. Considering all these results, the use of imperfect 6R3 surfaces appears to be suited to promote the formation of pure and coherent Ge islands on SiC.     

Understanding hydrogen plasma processes based on the diagnostic results of 2.45 GHz ECRIS at Peking University

Optical emission spectroscopy(OES), as a simple in situ method without disturbing the plasma, has been performed for the plasma diagnosis of a 2.45 GHz permanent magnet electron cyclotron resonance(PMECR) ion source at Peking University(PKU). A spectrum measurement platform has been set up with the quartz-chamber electron cyclotron resonance(ECR) ion source [Patent Number: ZL 201110026605.4] and experiments were carried out recently. The electron temperature and electron density inside the ECR plasma chamber have been measured with the method of line intensity ratio of noble gas. Hydrogen plasma processes inside the discharge chamber are discussed based on the diagnostic results. What is more, the superiority of the method of line intensity ratio of noble gas is indicated with a comparison to line intensity ratio of hydrogen. Details will be presented in this paper.     

Low-pressure plasma cleaning of Au and PtIr noble metal surfaces

The effect of low-pressure hydrogen and oxygen plasma cleaning of Au and PtIr was investigated by X-ray photoelectron spectroscopy. Hydrocarbon contamination was efficiently removed by hydrogen and oxygen plasma. Hydrogen plasma additionally reduces oxygen compounds, especially metal oxides, while oxygen plasma results in the formation of a surface layer of Au₂O₃ and PtO, respectively. Both noble metal oxides are unstable and decompose with time. The decomposition of metal oxides occurs in parallel with the recontamination of the surface. Metal oxides can be removed completely for Au and partially for PtIr by an additional cleaning with hydrogen plasma. Hydrogen plasma treatment is very promising for noble metal surface cleaning.     

电子回旋共振微波等离子体刻蚀α:CH薄膜的工艺

为了刻蚀出图形完整、侧壁陡直、失真度小的α:CH薄膜微器件,研究了有铝和无铝掩膜、气体流量比、工作气压对刻蚀速率的影响,并对纯氧等离子体刻蚀稳定性进行了研究。研究结果表明：在相同条件下,刻蚀速率随刻蚀时间变化不大;a:CH薄膜上有铝和无铝掩膜时,刻蚀速率相同;流量一定时,刻蚀速率随氩气和氧气体积比的增大而降低,当用纯氩气时,几乎没刻蚀作用;刻蚀速率随工作气压的增大而降低。实验中,得到最佳刻蚀条件是：纯氧气,流量4 mL·s-1,工作气压9.9×10-2 Pa,微波源电流80 mA,偏压-90 V。     

Improvement in micro-structural and mechanical properties of zinc film by surface treatment with low temperature argon plasma

Nanocrystalline zinc films were deposited on gold coated borosilicate glass substrates by thermal evaporation method using zinc powders as the source material and then treated with argon plasma at various temperatures. From X-ray diffraction study, the as-deposited films are found to be metallic Zn and polycrystalline in nature. The crystalline nature improves with the increase of temperature up to 200 °C and decreases with the further increase of temperature to 300 °C. The binding energy observed for Zn 2p_3/2, and the binding energy separation between Zn 2p_3/2 and Zn 2p_1/2 in the X-ray photoelectron spectrum indicate that the films are metallic zinc films. Transmission electron microscopic study shows hexagonal shaped grains having size ∼58 nm upon treatment with Ar plasma. It is clearly shown the grain growth and distinct grain boundary with the increase in temperature. The average Young's modulus (E) and hardness (H) are measured to be 84 GPa and 4.0 GPa for as-deposited film, whereas 98 GPa and 5.8 GPa for plasma treated film at 200 °C. The enhancement in mechanical properties is attributed to improvement in crystalline nature of the film and better interlinking between grains and boundaries.     

Epitaxial growth of MnO/Ag(0 0 1) films

Among the 3d transition metal monoxides, MnO plays a particular role due to the high spin ground state of the 3d⁵ configuration of Mn²⁺. Therefore, MnO could be an excellent model system to investigate many kinds of spin dependent or magnetic interactions between electrons in the surface of an antiferromagnetic solid. But in practice, most experimental investigations on crystalline MnO(0 0 1) surfaces suffer from the bad structural quality of the surface of cleaved bulk crystals. In this paper, we report on the epitaxial growth of MnO/Ag(0 0 1) surfaces, which is proved to be a method to produce crystalline MnO(0 0 1) surfaces of high structural order.     

Surface termination, composition and reconstruction of Fe3O4(001) and γ-Fe2O3(001)

We address a current controversy concerning the nature of the surfaces of Fe₃O₄(001) and γ-Fe₂O₃(001) grown on MgO(001) by molecular beam epitaxy. Despite recent claims to the contrary, we show that γ-Fe₂O₃(001) unambiguously exhibits a (1×1) surface net, in contrast to Fe₃O₄(001), which assumes a R45 reconstruction. In addition, we present high-energy-resolution Fe 2p and O 1s core-level photoelectron spectra obtained at both normal and grazing emission for γ-Fe₂O₃(001) and Fe₃O₄(001). These spectra show that the Fe₃O₄(001) surface has a higher Fe(III)/Fe(II) ratio than the bulk, and that the asymmetry in the O 1s line shape for Fe₃O₄(001) is due to final state effects rather than the presence of a surface oxygen or hydroxyl species.     

Oxidation of low-index FeAl surfaces

The oxidation of the (100), (110) and (111) surfaces of the intermetallic compound FeAl has been investigated using LEED and XPS. On all three surfaces, oxidation at room temperature leads to the formation of an amorphous oxide film on top of an Al-depleted interlayer. The film growth can be divided into two regions of differing kinetics, i.e. the initial formation of a closed oxide film and a subsequent thickening. In the first region, the oxygen-uptake rate varies significantly with surface orientation, while in the thickening regime the uptake is the same for all surfaces. The maximum thickness as well as the composition of the oxide films were found to depend on the initial oxidation rate. At higher oxidation temperatures, ordered oxide films of around 5–8 Å in thickness are formed, very similar to those observed on NiAl. Photoemission spectra from these ordered phases showed evidence for Al atoms in two different chemical environments, i.e. the well-known oxide species in the interior of the film and an additional species present at the oxide/alloy interface.     

Effect of substrate temperature on the surface and interface oxidation of NiTi thin films

NiTi shape memory alloy thin films are deposited on pure Cu substrate at substrate ambient temperatures of 300 °C and 450 °C. The surface and interface oxidation of NiTi thin films are characterized by X-ray photoelectron spectroscopy (XPS). After a subsequent annealing treatment the crystallization behavior of the films deposited on substrate at different temperatures is studied by X-ray diffraction (XRD). The effects of substrate temperature on the surface and interface oxidation of NiTi thin films are investigated. In the film surface this is an oxide layer composed of TiO₂. The Ni atom has not been detected on surface. In the film/substrate interface there is an oxide layer with a mixture Ti₂O₃ and NiO in the films deposited at substrate temperatures 300 °C and 450 °C. In the films deposited at ambient temperature, the interface layer contains Ti suboxides (TiO) and metallic Ni.     

Segregation of Pt at clean surfaces of (Pt, Ni)3Al

Experimental evidence for surface segregation of Pt at (1 1 1) surfaces of ternary (Pt, Ni)₃Al alloys is presented, based upon Auger electron spectroscopy, low energy ion scattering, and angle-resolved X-ray photoelectron spectroscopy. Density functional calculations in the dilute limit confirm that Pt segregation is energetically favored.     

Surface composition and surface energy of Teflon treated by metal plasma immersion ion implantation

Plasma immersion ion implantation using a metal vacuum vapor arc (MEVVA) or cathodic arc source was used to modify the fluorine-based polymer, Teflon. Several transition metal ions such as Co, Ni, Cu were introduced into plasma and implanted into the Teflon surface. The chemical composition of the modified surface was determined by Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS). The metals were found to be distributed several nanometers from the surface and XPS results showed the formation of metallic carbides and fluorides on the surface. Contact angle measurement results demonstrate the favorable change in the wettability from being hydrophobic to hydrophilic. Our study shows that the increase of the surface energy is due to the change of the surface interaction properties after metal plasma implantation.     

Interactions of water vapor with polycrystalline uranium surfaces - The low temperature regime

The initial interaction of water vapor with polycrystalline uranium surfaces at low temperatures (LT, 200 K), was studied by combined measurements utilizing Direct Recoil Spectrometry (DRS), Auger electron Spectroscopy (AES) and X-ray Photoelectron Spectroscopy (XPS). Three stages of water dissociation and adsorption can be observed: Stage (1) 0-0.6 oxygen monolayer coverage: full (H₂O → O + 2H) dissociation is dominant, coexisting with partial dissociation (H₂O → OH + H). In contrast to room temperature, where the adsorption is of a Langmuir type, in the present low temperature case it is a precursor-state type - the oxygen accumulation is linear, indicating that a constant fraction of the water molecules impinging on the surface diffuses to a dissociation and adsorption site. Only minor oxidation of the uranium occurs. Stage (2) 0.6-full oxygen coverage: only partial dissociation occurs. Still only minor oxidation of uranium takes place. Stage (3) buildup of a second hydroxyl layer, concurrent with slow continuous oxidation of uranium. Subsequent heating of the sample after the described exposure was accompanied by additional continuous oxidation. Above ∼230 K, the main process seems to be OH decomposition and desorption. A comparison is made to the dissociation and adsorption processes at room temperature.     

RT growth of acetonitrile and acrylonitrile on Si(0 0 1)-2 × 1 studied by XPS and LEED

In this work we show the adsorption of acetonitrile (CH₃CN) and acrylonitrile (CH₂CHCN) on Si(0 0 1)-2 × 1 at room temperature by increasing the molecular doses. Especially, by means of XPS and LEED data, we stress the action of these molecules on the silicon surface locating the dangling-bonds quasi-saturation within 10 L. The shortage of nitrogen XPS signal and some anomalies in carbon spectra point to an invading action from a traditional X-ray source (Al-K_α line) against chemisorbed molecules. In particular, we think that a long exposure to this radiation could break carbon-silicon bonds changing some adsorption geometries and making desorb molecular fragments.     

Autocatalytic partial reduction of FeO(1 1 1) and Fe3O4(1 1 1) films by atomic hydrogen

The interaction of atomic hydrogen with thin epitaxial FeO(1 1 1) and Fe₃O₄(1 1 1) films was studied by TDS, XPS and LEED. On the thin, one Fe-O bilayer thick FeO film, partial reduction occurs in two steps during exposure. It ends after removal of 1/4 monolayer (ML) of oxygen with a 2 × 2 pattern appearing in LEED. This FeO_0.75 film is passive against further reduction. The first reduction step saturates after removal of ∼0.2 ML and shows autocatalytic kinetics with the oxygen vacancies formed during reduction causing acceleration. The second step is also autocatalytic and is related with reduction to the final composition and an improvement of the 2 × 2 order. A structure model explaining the two-step reduction is proposed. On the thick Fe₃O₄ film, irregular desorption bursts of H₂O and H₂ were observed during exposure. Their occurrence appears to depend on the film quality and thus on surface order. Because of the healing of reduction-induced oxygen vacancies by exchange of oxygen or iron with the bulk, a change of the surface composition was not visible. The existence of partially reduced oxide phases resistant even to atomic hydrogen is relevant to the mechanism of dehydrogenation reactions using iron oxides as catalysts.     

Stabilization against initial oxidation using surface segregation of sulfur on Fe(1 0 0)

Surface segregation process of dissolved elements on a Fe(1 0 0) surface and the initial oxidation processes of the sulfur segregated surfaces were studied in situ by AES and RHEED. The surface enrichment of sulfur has formed a c(2×2) superstructure at elevated temperatures. The Fe(1 0 0)c(2×2)-S surface was found to have stabilization effect against initial oxidation. The retardation of oxidation was most enhanced when the sulfur surface concentration reached at the saturation coverage (1/2 ML). The possible physical origins of the stabilization effect are proposed.     

甚高频电容耦合氢等离子体特性研究

采用高H₂稀释的SiH₄等离子体放电, 特别是甚高频等离子体增强化学气相沉积技术是当前高速制备优质微晶硅薄膜的主流方法. 尽管在实验上取得了很大的突破, 但其沉积机理一直是研究的热点和难点. 本文通过建立二维时变的轴对称模型,在75 MHz放电频率下, 对与微晶硅沉积非常相关的甚高频电容耦合氢等离子体放电进行了数值模拟, 研究了沉积参数对等离子体特性的影响, 并与光发射谱(OES)在线监测结果进行了比较. 结果表明: 电子浓度 n_e在等离子体体层中间区域最大, 而电子温度 T_e及H_α与H_β的数密度在体层和鞘层界面附近取极大值; 当气压从1 Torr (1 Torr=133.322 Pa)增大至5 Torr时, 等离子体电势单调降低, 在体层中间区域 n_e先快速增大然后逐渐减小, T_e先下降后趋于稳定; 随着放电功率从30 W增大到70 W, 电子浓度 n_e及H_α与H_β的数密度均线性增大, 而电子温度 T_e基本保持不变; OES在线分析结果与模拟结果符合得很好.     

Protein immobilization capacity and covalent binding coverage of pulsed plasma polymer surfaces

Three carbon surfaces were deposited using pulsed plasma enhanced chemical vapour deposition method: a low and a high nitrogen-containing plasma polymer surfaces and a diamond-like carbon surface. The surfaces were analysed using both X-ray photoelectron spectroscopy (XPS) technique and the enzyme-linked immunosorbent assay (ELISA) method combining with sodium dodecyl sulphate (SDS) cleaning to investigate the capacity and covalent binding of the immobilized proteins. A good correlation was found on quantification of remaining protein after SDS cleaning using the ELISA method and the XPS technique. All surfaces had similar initial capacity of protein attachment but with large different resistance to SDS cleaning. The analysis showed that the high nitrogen-containing plasma polymer was the best biocompatible material due to its highest resistance to SDS cleaning, i.e. with the highest quantity (∼80%) of proteins bound covalently.     

Growth and annealing of zinc-blende CdSe thin films on GaAs (0 0 1) by molecular beam epitaxy

CdSe thin films have been grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). The effects of substrate temperature and annealing treatment on the structural properties of CdSe layers were investigated. The growth rate slightly decreases due to the accelerated desorption of Cd from CdSe surface with an increase in the temperature. The sample grown at 260 °C shows a polycrystalline structure with rough surface. As the temperature increases over 300 °C, crystalline CdSe (0 0 1) epilayers with zinc-blende structure are achieved and the structural quality is improved remarkably. The epilayer grown at 340 °C displays the narrowest full-width at half-maximum (FWHM) from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) and the smallest root-mean-square (RMS) roughness of 0.816 nm. Additionally, samples fabricated at 320 °C were annealed in air for 30 min to study the films’ thermal stability. X-ray diffraction (XRD) results indicate that the zinc-blende structure remains unchanged when the annealing temperature is elevated to 460 °C, meaning a good thermal stability of the cubic CdSe epilayers.