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1.
ZnO thin films were prepared on soda-lime glass from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C2H3O2)2], monoethanolamine [H2NC2H4OH] and isopropanol. The deposited films were dried at 50 and 300 °C. X-ray analysis showed that the films were amorphous. Laser annealing was performed using an excimer laser. The laser pulse repetition rate was 25 Hz with a pulse energy of 5.9 mJ, giving a fluence of 225 mJ cm−2 on the ZnO film. Typically, five laser pulses per unit area of the film were used. After laser processing, the hexagonal wurtzite phase of zinc oxide was observed from X-ray diffraction pattern analysis. The thin films had a transparency of greater than 70% in the visible region. The optical band-gap energy was 3.454 eV. Scanning electron microscopy and profilometry analysis highlighted the change in morphology that occurred as a result of laser processing. This comparative study shows that our sol-gel processing route differs significantly from ZnO sol-gel films prepared by conventional furnace annealing which requires temperatures above 450 °C for the formation of crystalline ZnO.  相似文献   

2.
Using zinc acetate as the raw material, isopropanol as the solvent, and monoethanolamine as the stabilizer, photosensitive ZnO sol is prepared by chemical modification with the acetylacetone. Chelate rings of acetylacetone with zinc ions are formed in the ZnO sol and its corresponding gel films. Irradiation of the gel film by a UV lamp in air leads to the decomposition of the chelate ring. Using the photosensitivity of the gel films, ZnO gel patterns can be obtained by selective irradiation followed by leaching in organic solvents. After the patterned ZnO gel film is preheated at 500 °C, and fired at 600 °C, c-oriented ZnO patterned films are obtained.  相似文献   

3.
In this work, a high performance impedance-type humidity sensor based on Europium-doped ZnO with abundant surface oxygen vacancy defects was synthesized by sol-gel method. Response of the Eu-doped ZnO with different molar ratio were investigated by exposing them to humidity environments in wide range of 11–95% RH at room temperature. The Eu-doped ZnO (2?mol%) exhibits a three orders impedance change, along with short response/recovery time (5?s/19?s), low hysteresis and best linearity. Complex impedance spectra indicates that dopant Eu can enhance humidity sensing performance of ZnO, which is resulted from the introduction of Eu3+ ions into ZnO structure to produce more defects of surface oxygen vacancy and more active sites on the surface of ZnO. The results show that this is a feasible method to achieve high humidity sensing performance by Eu doped ZnO, which make it a promising candidate for humidity sensing materials and broaden the use of ZnO materials.  相似文献   

4.
It was recognized that ZnO can be formed during synthesizing nano Zn4O(C8H4O4)3 metal-organic framework (nano MOF-5). Furthermore, it is generally accepted that the ZnO is dispersed inside the pores of MOF-5. However, herein, the measurements of X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) showed that the crystal particle sizes of ZnO in MOF-5 are in the range of 5-18 nm, which are larger than the pore size of MOF-5 (1.3 nm). This clearly demonstrates that those ZnO nanoparticles are located outside the pores of MOF-5.  相似文献   

5.
TiO2 and TiO2/ZnO double layer films were sputtered on glass substrates. It was found that a thin ZnO underlayer is helpful for tailoring the microstructure and surface morphology of the TiO2 film. By applying a 70-nm-thick ZnO underlayer, a TiO2 thin film of 100 nm in thickness with well crystallized anatase phase and rough surface was successfully fabricated without heating the substrate. Relatively high photo-catalytic activity and good hydrophilic properties were observed in such TiO2/ZnO double layer films.  相似文献   

6.
The structural and optical analysis of glasses is carried out by XRD, FTIR, density and UV visible spectroscopic measurement techniques. XRD results have confirmed the glassy nature of the samples. The FTIR spectral analysis reveals that with the combined presence of ZnO and CeO2 contents in Al2O3-PbO-B2O3 glasses, more BO3 groups are transformed into BO4. The optical analysis reveals that optical band gap energy decreases more for CeO2-ZnO-Al2O3-PbO-B2O3 glasses (from 2.28 to 1.84 eV). The presence of CeO2 and ZnO in the glass samples causes more compaction of the borate network due to the formation of more BO4 groups and the presence of ZnO4 groups, which results an increase in density, refractive index and decrease of molar volume.  相似文献   

7.
The nano-sized coupled oxides ZnO/SnO2 thin films in a molar ratio of 2:1 (Z2S), 1:1 (ZS) and 1:2 (ZS2) were prepared using sol-gel dip coating method and characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. Escherichia coli (E. coli, ATCC 25922) was selected as a model for the Gram-negative bacteria to evaluate antibacterial property of composite samples compared with single ZnO (Z) and single SnO2 (S) films. The antibacterial activity has been studied applying the so-called antibacterial drop test under UV illumination. The bactericidal activity was estimated by relative number of bacteria survived calculated from the number of viable cells which form colonies on the nutrient agar plates. The influence of the SnO2-ZnO nanocomposite composition on the structural features and on the antibacterial properties of the thin films are reported and discussed. It is found that all coatings exhibited a high antibacterial activity. The coupled oxide photocatalyst Z2S has better photocatalytic activity to bacteria inactivation than ZS, ZS2, Z and S films. Furthermore, nanostructured films were active even in the absence of irradiation.  相似文献   

8.
This paper reports a study of reactive ion etching (RIE) of n-ZnO in H2/CH4 and H2/CH4/Ar gas mixtures. Variables in the experiment were gas flow ratios, radio-frequency (rf) plasma power, and total pressure. Structural and electrical parameters of the etched surfaces and films were determined. Both the highest surface roughness and highest etching rate of ZnO films were obtained with a maximum rf power of 300 W, but at different gas flow ratios and working pressures. These results were expected because increasing the rf power increased the bond-breaking efficiency of ZnO. The highest degree of surface roughness was a result of pure physical etching by H2 gas without mixed CH4 gas. The highest etching rate was obtained from physical etching of H2/Ar species associated with chemical reaction of CH4 species. Additionally, the H2/CH4/Ar plasma treatment drastically decreased the specific contact and sheet resistance of the ZnO films. These results indicated that etching the ZnO film had roughened the surface and reduced its resistivity to ohmic contact, supporting the application of a roughened transparent contact layer (TCL) in light-emitting diodes (LEDs).  相似文献   

9.
Impedance studies of Sb doped SnO2 thin film prepared by sol gel process   总被引:1,自引:0,他引:1  
Antimony-doped tin oxide thin films have a range of technological applications as conductive coatings, and sol-gel processing seems to offer some advantages over other coating techniques. In this study antimony-doped tin oxide (ATO) thin films have been prepared by the sol-gel dip-coating (SGDC) process, using tin (II) chloride dehydrate (SnCl2, 2H2O) and antimony (III) chloride (SbCl3) as host and dopant precursors respectively. The structure of the (ATO) powders was analysed by X-ray diffraction (XRD) and the microstructure of the thin films by atomic force microscopy (AFM). These investigations show that the structure is tetragonal rutile type and that an increase in Sb-doping decreases the crystallite size of the (ATO) particles. To analyze the impedance spectroscopy data, the Nyquist (Z″ vs. Z′) plots as well as the representation of imaginary (Z″) and real (Z′) parts of impedance vs. frequency were used. The Nyquist plots suggest that only the grain boundaries are responsible in the conduction mechanism of the material. From the variation of lnσ vs. inverse of absolute T we have deduced the activation energy found to be 0.87 eV.  相似文献   

10.
ZnO films were deposited on c-plane Al2O3 substrates by pulsed laser deposition. The etching treatments for as-grown ZnO films were performed in NH4Cl aqueous solution as a function of NH4Cl concentration and etching time. It was found that NH4Cl solution is an appropriate candidate for ZnO wet etching because of its controllable and moderate etching rate. The influence of etching treatment on the morphology, optical and electrical properties of the ZnO films has been investigated systematically by means of X-ray diffraction, atomic force microscope, photoluminescence and Hall effect. The results indicated that the surface morphology and optical properties of the films were highly influenced by etching treatment.  相似文献   

11.
Iron(III) oxyhydroxide xerogels were prepared through sol-gel technology, using iron(III) nitrate nonahydrate as precursor, ethanol as solvent and ammonium hydroxide as gelation agent. This base is used for propylene oxide substitution, which was the gelation agent in previous works. Synthesis of a gel using NH4OH as a gelation agent is an innovative result with this type of precursor, since with metal salts the addition of a strong base commonly results in precipitation of the solid. The gel synthesis was achieved by controlling the base addition time. The dried material has a residual amount of organic impurities, in contrast with the significant amount detected in xerogels prepared using propylene oxide. The iron phase prevailing in the produced xerogels can be defined as γ-FeO(OH) (lepidocrocite), according to FTIR and Mössbauer analyses. The xerogels are formed by large clusters of well connected nanocrystallites of this phase. XRD revealed a crystalline phase retained inside the iron oxyhydroxide amorphous structure, which corresponds to NH4NO3 and results from the combination of NO3 and NH4+ ions in solution. The produced xerogel has a promising composition to be an oxidizing composite for the energetic materials area.  相似文献   

12.
Experimental study of Love-mode immunosensors based on structures of ZnO/36°YX-LiTaO3 is presented, in which the ZnO films with c-axis (0 0 2) orientation have been successfully grown on the 36°YX-LiTaO3 substrates by RF magnetron sputtering technique. Then the Love-mode immunosensors based on the ZnO/36°YX-LiTaO3 structures and monitoring antibody-antigen immunoreactions in aqueous solutions in real time are fabricated. The experimental results show that the optimal thickness of ZnO layers is about 1.20 μm in the structures deposited on 36°YX-LiTaO3 substrates, which is much less than that of SiO2 overlayers about 6 μm. The antibody-antigen immunoreaction experiments also show that the frequency shifts of the sensors with 1.33 μm ZnO films are proportional to the concentration of antigen in solution as the concentration range less than 100 μg/ml.  相似文献   

13.
Zinc-Tin-Oxide (ZTO) thin films were fabricated using a simple and eco-friendly sol-gel method and their application in thin film transistors (TFTs) was investigated. Annealing temperature has a crucial influence on the structure and electrical properties of sol-gel ZTO thin films. The ZTO thin films annealed at 300–600?°C revealed smooth and uniform surfaces with amorphous state, in addition, a high optical transparency over 90% of the ZTO films in the visible range was obtained. The electrical performance of ZTO TFTs showed obvious dependence on annealing temperature. The ZTO TFTs annealed at 500?°C showed a high carrier mobility of 5.9?cm2/V, high on/off current ratio (Ion/off) of 106-107, and threshold voltage (Vth) of 1.03?V. To demonstrate the application of sol-gel ZTO films in low-power display fields, we also fabricated ZTO TFTs with a solution-processed high-permittivity (high-k) ZrTiOx dielectric layer. The ZTO/ZrTiOx TFTs showed high mobility of 17.9?cm2/V and Ion/off of 105-106?at a low operation voltage of 3?V, indicating that Indium-free ZTO thin films would be potential candidates for low cost, high performance oxide TFT devices.  相似文献   

14.
ZnO thin films were prepared by thermal oxidation of Zn metal at 400 °C for 30 and 60 min. The XRD results showed that the Zn metal was completely converted to ZnO with a polycrystalline structure. The sensors had a maximum response to H2 at 400 °C and showed stable behavior for detecting H2 gases in the range of 40 to 160 ppm. The film oxidized for 60 min in oxygen flow exhibited higher response than that of the 30 min oxidation which was approximately 4000 for 160 ppm H2 gas concentration. The sensing mechanism was modeled according to the oxygen-vacancy model.  相似文献   

15.
A new hierarchical nanostructure that consists of cobalt oxide (Co3O4) and zinc oxide (ZnO) was produced by the electrospinning process followed by a hydrothermal technique. First, electrospinning of a colloidal solution that consisted of zinc nanoparticles, cobalt acetate tetrahydrate and poly(vinyl alcohol) was performed to produce polymeric nanofibers embedding solid nanoparticles. Calcination of the obtained electrospun nanofiber mats in air at 600 °C for 1 h, produced Co3O4 nanofibers with rough surfaces containing ZnO nanoparticles (i.e., ZnO-doped Co3O4 nanofibers). The rough surfaced nanofibers, containing ZnO nanoparticles (ZnNPs), were then exploited as seeds to produce ZnO nanobranches using a specific hydrothermal technique. Scanning electron microscopy (SEM), and transmission electron microscopy (TEM) were employed to characterize the as-spun nanofibers and the calcined product. X-ray powder diffractometery (XRD) analysis was used to study the chemical composition and the crystallographic structure.  相似文献   

16.
In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH3 plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By Hall-effect measurement, a p-type conductivity was observed for the treated film with the hole density of 2.2 × 1016 cm−3. X-ray photoelectron spectroscopy (XPS) results confirmed that nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions. In low temperature photoluminescence spectra, an emission peak corresponding to acceptor-donor pair was observed. From this emission peak we calculated the N-related acceptor binding energy to be 130 meV.  相似文献   

17.
We report here the evolution of zinc based high purity phases with novel morphologies such as Zn3N2 hollow structures, ZnO nanowires and nanopowders, as well as metallic Zn layered hexagonal microparticles at progressively increased reaction temperature of 600 °C, 700 °C, 800 °C under NH3 gas atmosphere using Zn powder precursor and keeping all other experimental parameters unchanged. Growth mechanism for Zn3N2 obtained by nitridation, ZnO by oxidation and Zn microparticles via thermal evaporation & condensation process are discussed briefly. The as-synthesized products were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and scanning electron microscopy (SEM). Photoluminescence (PL) studies have revealed very interesting and infrequently observed emission bands at 378 and 661 nm for Zn3N2, 359 and 396 nm for ZnO as well as 389 nm for Zn polyhedral microparticles.  相似文献   

18.
In this study, Ag or Al-doped TiO2/ZnO heterostructure nanocatalysts were prepared using a sol-gel method for photocatalysis to evaluate the degradability. The photocatalytic behavior was evaluated by the degradation of methylene blue (MB) under ultraviolet (UV) light irradiation. Photocatalytic studies suggested that 1 mol% Ag-doped TiO2/ZnO (TiO2/ZnO = 0.75/0.25) heterostructure nanocatalysts showed higher photocatalytic activity, and that the degradation efficiency can reach 83% in 4 h, 14% higher than that for pure TiO2. Finally, the photocatalysis mechanism for the Ag-doped TiO2/ZnO heterostructure nanocatalysts is discussed.  相似文献   

19.
Glass samples of compositions xZnO-xCeO2-(30−x)PbO-(70−x)B2O3 with x varying from 2% to 10% mole fraction are prepared by the melt quench technique. The structural and optical analysis of glasses is carried out by XRD, FTIR, density and UV-visible spectroscopic measurement techniques. The FTIR spectral analysis indicates that with the addition of ZnO contents in glass network, structural units of BO3 are transformed into BO4. It has been observed in our previous work that band gap decreases from 2.89 to 2.30 eV for CeO2-PbO-B2O3 glasses with cerium content varying from 0% to 10% [Gurinder Pal Singh, Davinder Paul Singh, Physica B 406(3) (2011) 640-644]. With the incorporation of zinc in CeO2-PbO-B2O3 glasses, the optical band gap energy decreases further from 2.38 to 2.03 eV. This causes more compaction of the borate network, which results in an increase of density (3.39-4.02 g/cm3). Transmittance shows that ZnO in glass samples acts as a reducing agent thathelps to convert Ce4+→Ce3+ ions.  相似文献   

20.
Well-aligned crystalline ZnO nanorod arrays were synthesized via an aqueous solution route with ammonia and zinc nitrate as inorganic precursors. ZnO crystalline seed films were firstly coated on ITO substrates for epitaxial growth of rods through sol-gel processing and heat treatment. SEM, TEM, SAED and XRD were utilized to characterize morphologies and structures of ZnO crystals. Heterogeneous nucleation is crucial for rod growth. A broad scope of pH favorable for heterogeneous nucleation was disclosed at zinc concentration from 0.04 to 0.1 M in the inorganic system due to the complex reaction of ammonia with Zn2+. Elevation of initial zinc concentration or pH promoted growth rate of rods and enlarged rod size. ZnO nanorods were transformed to nanotubes, nanosheets and rods with blanket-like shaped surface mainly by secondary pH adjustment. All ZnO nanocrystals are wurtzite structure preferentially oriented in c-axis direction.  相似文献   

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