Roughness evolution of Si surfaces upon Ar ion erosion

We studied the roughness evolution of Si surfaces upon Ar ion erosion in real time. Following the theory of surface kinetic roughening, a model proposed by Majaniemi was used to obtain the value of the dynamic scaling exponent β from our data. The model was found to explain both the observed roughening and the smoothening of the surfaces. The values of the scaling exponents α and β, important for establishing a universal model for ion erosion of (Si) surfaces, have been determined. The value of β proved to increase with decreasing ion energy, while the static scaling exponent α was found to be ion energy independent.     

Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation

A method for the fabrication of luminescent Si nanoclusters in an amorphous SiO₂ matrix by ion implantation and annealing, and the detailed mechanisms for the photoluminescence are reported. We have measured the implanted ion dose, annealing time and excitation energy dependence of the photoluminescence from implanted layers. The samples were fabricated by Si ion implantation into SiO₂ and subsequent high-temperature annealing. After annealing, a photoluminescence band below 1.7 eV has been observed. The peak energy of the photoluminescence is found to be independent of annealing time and excitation energy, while the intensity of the luminescence increases as the annealing time and excitation energy increase. Moreover, we found that the peak energy of the luminescence is strongly affected by the dose of implanted Si ions especially in the high dose range. These results indicate that the photons are absorbed by Si nanoclusters, for which the band-gap energy is modified by the quantum confinement effects, and the emission is not simply due to direct electron–hole recombination inside Si nanoclusters, but is related to defects probably at the interface between Si nanoclusters and SiO₂, for which the energy state is affected by Si cluster–cluster interactions. It seems that Si nanoclusters react via a thin oxide interface and the local concentrations of Si nanoclusters play an important role in the peak energy of the photoluminescence.     

Evolution of self-assembled Ge/Si island grown by ion beam sputtering deposition

The effect of temperature and Ge coverage on the evolution of self-assembled Ge/Si islands grown by ion beam sputtering deposition is studied. Atomic force microscopy and Raman spectroscopy are used to analyze the island morphology and the intermixing between Si and Ge. The experiments are presented in two aspects. First, when the temperature is increased, intermixing is promoted, resulting in the reappearance of low aspect ratio islands. Second, a different evolution pathway is observed, in which short islands initially don’t grow along the constant ratio of 11:1 (diameter:height) and the islands always grow faster in vertical direction. In summary, the interdiffusion, surface diffusion, and amount of Ge determines the evolution of Ge/Si islands.     

Self-organized dot patterns on Si surfaces during noble gas ion beam erosion

The erosion of target materials with energetic ions can lead to the formation of patterns on the surface. During low-energy (?2000 eV) noble gas (Ne⁺, Ar⁺, Kr⁺, Xe⁺) ion beam erosion of silicon surfaces dot patterns evolve on the surface. Dot structures form at oblique ion incidence of 75° with respect to surface normal, with simultaneous sample rotation, at room temperature. The lateral ordering of dots increases while the dot size remains constant with ion fluence, leading to very well ordered dot patterns for prolonged sputtering. Depending on ion beam parameters, dot nanostructures have a mean size from 25 nm up to 50 nm, and a mean height up to 15 nm. The formation of dot patterns depends on the ion/target mass ratio and on the ion energy. The temporal evolution and the lateral ordering of these nanostructures is studied using scanning force microscopy (AFM).     

Structural and photoluminescence properties of Si nanoclusters obtained by ion implantation into Si3N4 films

In the present paper we report structural and photoluminescence (PL) results from samples obtained by Si implantation into stoichiometric silicon nitride (Si₃N₄) films. The Si excess was introduced in the matrix by 170 keV Si implantation performed at different temperatures with a fluence of Φ=1×10¹⁷ Si/cm². The annealing temperature was varied between 350 and 900 °C in order to form the Si precipitates. PL measurements, with a 488 nm Ar laser as an excitation source, show two superimposed broad PL bands centered around 760 and 900 nm. The maximum PL yield is achieved for the samples annealed at 475 °C. Transmission electron microscopy (TEM) measurements show the formation of amorphous nanoclusters and their evolution with the annealing temperature.     

Initial stage of nitridation on Si(1 0 0) surface using low-energy nitrogen ion implantation

The initial stage of the thermal nitridation on Si (1 0 0)-2 × 1 surface with the low-energy nitrogen ion (200 eV) implantation was studied by photoemission spectroscopy (PES). The formation of nitride was shown the different characteristics depending on the annealing temperature. The disordered surface at room temperature was changed to 2 × 1 periodicity with the low-energy electron diffraction (LEED) as increasing the nitridation temperature. By decomposition of Si 2p spectrum, we can identify the three subnitrides (Si¹⁺, Si²⁺, and Si³⁺). By changing the take-off angle of the Si 2p, we can increase surface sensitivity and estimate that Si¹⁺, Si²⁺ and Si³⁺ are the interface states.     

Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxide

Light emitting diodes (LED), continuously operable at room temperature, have been fabricated by Si⁺ ion implantation into SiO₂ and subsequent annealing in order to form Si nanocrystals. A highly doped poly-Si layer was used to enhance injection into nanocrystals. Visible electroluminescence (EL) was observed from the LEDs with oxide thickness 180 Å for bias voltages above 8 V. The EL decay transient was similar to stretched-exponential decays observed for photoluminescence (PL) from Si nanocrystals.     

Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

Si(1 0 0) surfaces were prepared by wet-chemical etching followed by 0.3–1.5 keV Ar ion sputtering, either at elevated or room temperature (RT). After a brief anneal under ultrahigh vacuum (UHV) conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(1 0 0) surface. However, subsequent 300 eV Ar ion sputtering at room temperature followed by a 700 °C anneal yields atomically clean and flat Si(1 0 0) surfaces suitable for nanoscale device fabrication.     

离子推力器束流引出状态对栅极刻蚀的影响

为了研究30 cm离子推力器束流引出状态对栅极刻蚀的影响,建立了束流引出模型,并采用PIC-MCC方法对CEX离子造成的栅极腐蚀速率进行了计算,最后将计算结果与1500 h寿命试验结果进行比对分析。结果显示：束流正常聚焦时,在3 kW和5 kW两种工作模式下,加速栅和减速栅的质量刻蚀速率分别为(1.11～1.72)×10⁻¹⁵ kg/s及(1.22～1.26)×10⁻¹⁷ kg/s。在5 kW工况下,当屏栅上游等离子体密度达到4.03×10¹⁷ m⁻³时,束流出现欠聚焦现象,此时加速栅和减速栅的最大离子刻蚀速率分别为4.33×10⁻¹⁵ kg/s和4.02×10⁻¹⁵ kg/s;在3 kW工况下,当屏栅上游等离子体密度达到0.22×10¹⁷ m⁻³时,束流出现过聚焦现象,此时加速栅和减速栅的最大离子刻蚀速率分别为3.24×10⁻¹⁵ kg/s和5.01×10⁻¹⁵ kg/s。寿命试验结果表明,加速栅孔质量刻蚀速率的计算值与试验值比对误差较小,而由于束流离子对减速栅孔的直接轰击,导致减速栅孔刻蚀速率的计算值和试验值差异极大。经研究认为,对屏栅小孔采用变孔径设计,是降低当束流处于欠聚焦或过聚焦状态下,CEX离子造成加速栅孔和减速栅孔刻蚀速率,并提升推力器工作寿命的有效措施。     

Electronic and magneto-transport study across swift heavy ion irradiated exchange coupled Fe/NiO bilayer on Si substrate

Low temperature electronic and magneto-transport study across Fe/NiO bilayer on Si substrate has been reported. These bilayer structures have been irradiated by swift heavy ions (~100 MeV Fe⁷⁺ ions with a fluence of 5×10¹² ions/cm²). The electronic transport study across such bilayer (both unirradiated and irradiated) structures has shown the semiconducting nature of the interface. A significant decrease in current has been observed for the irradiated structure (as compared to unirradiated ones on the irradiation) which could be due to the irradiation induced introduction of defects/disorders in the structure. The magneto-transport study across unirradiated structure has shown the magnetic field sensitivity at low temperatures only whereas the irradiated structure has not shown any perceptible magnetic field sensitivity at low temperatures. Such observed intriguing feature of magnetic field sensitivity across the bilayer structures could be understood due to the motion of thermally assisted magnetic domain walls in the presence of external applied magnetic field. The observed high % MR could be related to spin-dependent electron scattering at the interfaces.     

Conductivity modification of ZnO film by low energy Fe ion implantation

In this paper we report the structural, optical and electrical behaviours of ZnO films implanted with 300 keV Fe¹⁰⁺ ions. From UV-vis spectroscopy it is observed that the band gap of the films decreases after implantation. Photoluminescence yield seems to increase in the implanted samples. From Hall measurements it is observed that the unimplanted sample shows n-type conductivity for the entire temperature range (100-300 K), whereas after implantation the samples show p-type conductivity for ≤200 K. The DC resistivity of the implanted samples is found to be lower than that of the unimplanted sample. We have found that the magnetoresistance of our samples is positive in the temperature range 200-300 K, but it becomes negative below 200 K.     

Microstructure array on Si and SiOx generated by micro-contact printing, wet chemical etching and reactive ion etching

A method, combining micro-contact printing (μCP), wet chemical etching and reactive ion etching (RIE), is reported to fabricate microstructures on Si and SiOx. Positive and negative structures were generated based on different stamps used for μCP. The reproducibility of the obtained microstructures shows the methodology reported herein could be useful in Micro-Electro-Mechanical Systems (MEMS), optical and biological sensing applications.     

Quantitative study of oxygen enhancement of sputtered ion yields. I. Argon ion bombardment of a silicon surface with O2 flood

A novel quantification approach is applied to determine in situ the amount of surface oxygen within the sputtered particle escape depth during steady-state sputter depth profiling of silicon under simultaneous oxygenation with an oxygen flood gas or with an oxygen primary ion beam. Quantification is achieved by comparing the secondary ion intensities of ¹⁶O that is adsorbed or implanted at the Si surface with the measured peak intensities of a calibrated ¹⁸O ion implant used as a reference standard. Sputtered ion yields can thereby be related to surface oxygen levels. In the present work the dependences of the partial silicon sputter yield Y and of the positive and negative secondary ion useful yields UY(X^±) (X = B, O, Al, Si, P) on the oxygen/silicon ratio, O/Si, in the sputtered flux are studied for ⁴⁰Ar⁺ bombardment of Si with simultaneous O₂ flooding. The silicon sputter yield is found to decrease with increasing flood pressure and O/Si ratio by up to a factor of 3. Both positive and negative secondary ion yields are enhanced by the presence of oxygen at the silicon surface. The useful ion yield of Si⁺ scales non-linearly with the atom fraction of surface oxygen; this behavior is shown to invalidate models that suggest that Si⁺ ion yield enhancement is dominated either by isolated oxygen atoms or by formation of SiO₂ precipitates. In contrast a microscopic statistical model that assumes that local Si⁺ ion formation depends only on the number of oxygen atoms coordinated to the Si atom to be ejected fits the ion yield data quantitatively.     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

电感耦合等离子体原子发射光谱法测定电解金属锰中硒、铁、硅

本文采用稀硫酸溶解试样，ICP－AES法同时测定电解金属锰中硒、铁、硅，通过对溶样酸、锰基体以及背景的研究，确定了分析条件。该方法简便具有良好的精密度和准确性，相对标准偏差不大于2．68％，回收率为98％－105％。经t检验与经典法无显著性差异。     

Formation and stabilization of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template

We demonstrate the growth of Fe-induced magic clusters on Si(1 1 1)-(7 × 7) template by in situ scanning tunneling microscopy (STM). These clusters form near a dimer row at one side of the half-unit cell (HUC); and with three different equivalent orientations. A cluster model comprising three top layer Si atoms bonded to six Fe atoms at the next layer in the 7 × 7 faulted-half template is proposed. The optimized cluster structure determined by first-principles total-energy calculation shows an inward-shifting of the three center Fe atoms. The clusters and the nearby center-adatoms of the next HUCs appear with a significantly reduced height below bias voltages 0.4 V in high resolution empty-state STM images, suggesting an energy gap opening near the Fermi level at these localized cluster and adatom sites. We explain the stabilization of the clusters on the 7 × 7 template using the gain in electronic energy as the driving force for cluster formation.     

Formation of copper silicides by high dose metal vapor vacuum arc ion implantation

Si(1 1 1) was implanted by copper ions with different doses and copper distribution in silicon matrix was obtained. The as-implanted samples were annealed at 300 and 540 °C, respectively. Formation of copper silicides in as-implanted and annealed samples were studied. Thermodynamics and kinetics of the reaction were found to be different from reaction at copper–silicon interface that was applied in conventional studies of copper–silicon interaction. The defects in silicon induced by implantation and formation of copper silicides were recognized by Si(2 2 2) X-ray diffraction (XRD).     

The effect of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface

We have studied the effects of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface. The surface was exposed to various doses of Ar⁺ ions accelerated towards the surface at 500 eV. X-ray photoelectron spectroscopy (XPS) spectra of the irradiated H-terminated Si(0 0 1) surface reveal the appearance of peaks that are associated with the presence of cleaved Si bonds. Ultraviolet photoelectron spectroscopy (UPS) spectra of the irradiated Si(0 0 1)2 × 1 surface show that the dimer dangling-bond surface state decays monotonically with increasing dose. These results, coupled with previous scanning tunneling microscopy (STM) studies, indicate that the breaking of dimers, and possibly the creation of adatom-like defects, during ion irradiation are responsible for the changes in the electronic structure of the valence band for this surface.     

Formation of Si nanowires by the electrochemical reduction of porous Ni/SiO2 blocks in molten CaCl2

Silicon nanowires (SiNWs) were prepared by the electrochemical reduction of solid Ni/SiO₂ blocks in molten CaCl₂ at 1173 K. The SiNWs have diameter distributions ranging from 80 to 350 nm, and the nickel–silicon droplets are found on the tips of the nanowires. The growth mechanism of SiNWs was investigated, which confirmed that the nano-sized nickel–silicon droplets formed at the Ni/SiO₂/CaCl₂ three-phase interline. The droplets lead to the oriented growth of SiNWs. Formation of nano-sized nickel–silicon droplets suggests that this method could be a potential way to produce nano-sized metal silicides.     

Formation of biaxial texture in metal films by selective ion beam etching

The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.