The dehydrogenation of CH4 on Rh(1 1 1), Rh(1 1 0) and Rh(1 0 0) surfaces: A density functional theory study

CH₄ dehydrogenation on Rh(1 1 1), Rh(1 1 0) and Rh(1 0 0) surfaces has been investigated by using density functional theory (DFT) slab calculations. On the basis of energy analysis, the preferred adsorption sites of CH_x (x = 0-4) and H species on Rh(1 1 1), Rh(1 1 0) and Rh(1 0 0) surfaces are located, respectively. Then, the stable co-adsorption configurations of CH_x (x = 0-3) and H are obtained. Further, the kinetic results of CH₄ dehydrogenation show that on Rh(1 1 1) and Rh(1 0 0) surfaces, CH is the most abundant species for CH₄ dissociation; on Rh(1 1 0) surface, CH₂ is the most abundant species, our results suggest that Rh catalyst can resist the carbon deposition in the CH₄ dehydrogenation. Finally, results of thermodynamic and kinetic show that CH₄ dehydrogenation on Rh(1 0 0) surface is the most preferable reaction pathway in comparison with that on Rh(1 1 1) and Rh(1 1 0) surfaces.     

Photocatalytic reduction of oxygen molecules at the (1 0 0) TiO2 anatase surface

The adsorption, photoreduction and chemical activity of oxygen molecules on the (1 0 0) anatase surface have been investigated here together with the effects that surface oxygen vacancies (V_O) can have on these O₂-related processes. We use an original approach by treating molecules on the TiO₂ surface like surface defects in the same framework successfully used for defects in semiconductors. The achieved results: (i) give the first theoretical evidence of an acceptor behaviour of an adsorbed O₂ molecule, which is at the origin of its photoreduction; (ii) show that the V_O donor character is strongly affected by the interaction with O₂; and (iii) suggest that the release of radicals as well as the formation of O₂-related radicals may be favoured by photogenerated electrons in presence of surface V_O’s.     

Theoretical studies of arsenite adsorption and its oxidation mechanism on a perfect TiO2 anatase (1 0 1) surface

There are many areas in the world where the ground water has been contaminated by arsenic. TiO₂ is one of the most promising materials that can remove arsenic from groundwater supplies by the adsorption-based processes. The TiO₂ surface is capable of photo-catalytic oxidation (PCO) changing the arsenite [As(III)] to arsenate [As(V)] which is more easily absorbed by the surface, increasing the efficiency of the process. In this paper, a density functional theory calculation has been performed to investigate the adsorption of As(III) on a perfect TiO₂ anatase (1 0 1) surface. All the As(III) solution species such as H₃AsO₃, H₂AsO₃⁻, HAsO₃²⁻ and AsO₃³⁻ are put onto the surface with many different possible attitudes to obtain the adsorption energy. Based on the adsorption energy and the concentration of H₃AsO₃, H₂AsO₃⁻, HAsO₃²⁻ and AsO₃³⁻ in an aqueous solution, the bidentate binuclear (BB) adsorption configurations of H₂AsO₃⁻ on the surface are more favorable at low As(III) concentrations, whereas BB form and monodentate mononuclear (MM) form may coexist at higher concentrations. By calculating H₂AsO₃⁻ co-adsorption with water and oxygen, we can confirm the deep acceptor character of an adsorbed O₂ molecule which implies that surface superoxide (or hydroperoxyl radical) plays an important role during the PCO process of As(III) on TiO₂ surface.     

Thermal stability of atomic-layer-deposited ultra-thin niobium oxide film on Si (1 0 0)

Ultra-thin Nb₂O₅ films with excellent uniformity have been grown on Si (1 0 0) by atomic-layer-deposition using Nb(OC₂H₅)₅ and H₂O precursors, and the corresponding thermal stability has been studied through atomic force microscope, transmission electron microscope and X-ray photoelectron spectroscopy. The results indicate that the ultra-thin (∼3 nm) Nb₂O₅ film is gradually built up into distributed large islands with increasing rapid thermal annealing (RTA) temperature. Meanwhile, both crystalline and amorphous phases are formed in the matrix of Nb₂O₅ annealed at 700 °C. In terms of the as-prepared sample, an interfacial layer (IL) with a thickness of around 1.5 nm is observed, that is composed of niobium silicate (Nb-O-Si). Further, the high temperature RTA leads to a thickened IL, which is attributed to the formation of more Nb-O-Si bonds and new silicon oxide (Si-O-Si) adjacent to the Si (1 0 0).     

Structures of Co and Pt nanoclusters on a thin film of Al2O3/NiAl(1 0 0) from reflection high-energy electron diffraction and scanning-tunnelling microscopy

With reflection high-energy electron diffraction (RHEED) and scanning-tunnelling microscopy (STM), we made measurements on Co and Pt nanoclusters grown by vapour deposition on a thin film of Al₂O₃/NiAl(1 0 0). The results show that the annealed Co nanoclusters (with mean diameters 2.5, 3.4, 5.8 nm and heights 0.7, 1.5, 1.5 nm, respectively) and Pt nanoclusters (with mean diameter 2.25 nm and height 0.4 nm) are highly crystalline and that their structures are significantly affected by the oxide substrate. Structural analysis based on the RHEED patterns indicates that both Co and Pt clusters have a fcc phase and grow with their (0 0 1) facets parallel to the θ-Al₂O₃(1 0 0) surfaces, and with their [1 1 0] and [−1 1 0] axes along the [0 1 0] and [0 0 1] directions of the oxide surface, respectively, so (Co(0 0 1)[1 1 0]∥Al₂O₃(1 0 0)[0 1 0] and Pt(0 0 1)[1 1 0]∥Al₂O₃(1 0 0)[0 1 0]). This growth is optimal as the Co and Pt fcc (0 0 1) facets match well with the oxygen mesh. To minimize the lattice mismatch, the lattice parameter of the Co clusters expands 4-5% relative to fcc Co bulk, whereas the lattice parameter of the Pt clusters remains near the bulk value, as the Pt fcc (0 0 1) plane has a close lattice match with the oxide surface.     

Spectroscopic study on thermal reaction and desorption of sulfur/Rh(1 0 0) induced by oxygen-containing molecules

The surface reaction and desorption of sulfur on Rh(1 0 0) induced by O₂ and H₂O are investigated with X-ray photoelectron spectroscopy (XPS) technique. The Rh(1 0 0) sample covered with atomic sulfur is prepared by means of the exposure to H₂S gas, and subsequently the sample is annealed under O₂ or H₂O atmosphere. The XPS results show that atomic sulfur adsorbed on Rh(1 0 0) reacts with O₂ and desorbs from the surface at 473 K or more. On the other hand, atomic sulfur can not be removed from Rh(1 0 0) surface by H₂O at any temperature.     

Adsorption of SO2 on Li atoms deposited on MgO (1 0 0) surface: DFT calculations

The adsorption of sulfur dioxide molecule (SO₂) on Li atom deposited on the surfaces of metal oxide MgO (1 0 0) on both anionic and defect (F_s-center) sites located on various geometrical defects (terrace, edge and corner) has been studied using density functional theory (DFT) in combination with embedded cluster model. The adsorption energy (E_ads) of SO₂ molecule (S-atom down as well as O-atom down) in different positions on both of O⁻² and F_s sites is considered. The spin density (SD) distribution due to the presence of Li atom is discussed. The geometrical optimizations have been done for the additive materials and MgO substrate surfaces (terrace, edge and corner). The oxygen vacancy formation energies have been evaluated for MgO substrate surfaces. The ionization potential (IP) for defect free and defect containing of the MgO surfaces has been calculated. The adsorption properties of SO₂ are analyzed in terms of the E_ads, the electron donation (basicity), the elongation of S-O bond length and the atomic charges on adsorbed materials. The presence of the Li atom increases the catalytic effect of the anionic O⁻² site of MgO substrate surfaces (converted from physisorption to chemisorption). On the other hand, the presence of the Li atom decreases the catalytic effect of the F_s-site of MgO substrate surfaces. Generally, the SO₂ molecule is strongly adsorbed (chemisorption) on the MgO substrate surfaces containing F_s-center.     

Ab initio simulation of the BaZrO3 (0 0 1) surface structure

Electronic and atomic structures of different terminations of the (0 0 1) non-polar orientation of BaZrO₃ surfaces have been studied using first-principles calculations. We found that surface energies at both possible surface terminations, BaO and ZrO₂, were very close. The (0 0 1)-BaO and (0 0 1)-ZrO₂ terminated surfaces have bandgap values smaller than that of a bulk BaZrO₃ crystal. In addition, the relative surface stability has been analyzed as a function of chemical environment.     

(6 × 2) Reconstruction of the Ag/Si(1 1 1) surface at 77 K

The ground state of the Ag/Si(1 1 1)-(3 × 1) has been investigated by low temperature scanning tunneling microscopy (STM) and density-functional theory. The Fourier transform of the STM image reveals a (6 × 2) reconstruction, which is theoretically found to yield a reconstruction with lower energy than the (3 × 1). The most stable (6 × 2) structural model leads to excellent correspondence between experimental and simulated STM images, and reveals a dimerization of the silver atoms in the channels formed by neighbouring honeycomb Si chains.     

CO adsorption on the Cu(1 1 1) surface: A density functional study

The adsorption of CO on the Cu(1 1 1) surface has been studied with ab initio density functional theory. The adsorbate-metal system was analyzed with the local density approximation, the gradient corrected functional of Perdew and Wang and the B3LYP hybrid functional, for comparison. A slab model was used for the pattern at a coverage of 1/3. The local density approximation and the gradient corrected functional give the fcc site as the favorable adsorption site. In contrast, the B3LYP functional results in the preference of the top site, in agreement with the experiment. These results confirm the suggested explanation for the failure of standard functionals, based on the position of the highest occupied and lowest unoccupied molecular orbital. The results of total energy calculations are presented, together with projected densities of states and Mulliken populations. In addition, the basis set superposition error is discussed for CO/Cu(1 1 1) and for CO/Pt(1 1 1).     

First principles calculations of the adsorption and diffusion of Y on the Si(0 0 1)-c(4 × 2) surface

We have studied the adsorption and diffusion of yttrium on the Si(0 0 1)-c(4 × 2) surface in the early stages of growth. Our first principles total energy calculations are based on the density functional theory as implemented in the SIESTA code. The exchange and correlation energies are treated within the generalized gradient approximation according to the Perdew, Burke and Ernzerhof parametrization. Our results demonstrate that the most favorable adsorption site is in the trench between two silicon dimer rows, identified as valley-bridge (V). Our studies show that the diffusion of an Y adatom on Si(0 0 1)-c(4 × 2) surface presents an anisotropic behavior. We found two values for the barriers along the valley (0.54 and 1.07 eV) and one of 1.24 eV in the perpendicular direction, showing that diffusion along the valley is more probable. The analysis of the Mulliken overlap populations shows that the bonding between an Y adatom and the surface is partially covalent. Two Y atoms on the surface do not form dimers instead they are adsorbed as adatoms.     

Adsorption of CO, CO2 and NO molecules on a BaTiO3 (0 0 1) surface

Since the development of Scanning Tunnelling Microscopy (STM) technique, considerable attention has been devoted to various molecules adsorbed on various surfaces. Also, a new concept emerged with molecules on surfaces considered as nano machines by themselves. In this context, a thorough knowledge of surfaces and adsorbed molecules at an atomic scale are thus particularly invaluable. The present work describes the first Density Functional Theory (DFT) study of adsorption of CO, CO₂ and NO molecules on a BaTiO₃ surface following a first preliminary calculation of O and O₂ adsorption on the same surface. In the previously considered work, we found that a (0 0 1) surface with BaO termination is more stable than the one with TiO₂-termination. Consequently, we extended our study to CO, CO₂ and NO molecules adsorbed on a (0 0 1) surface with BaO termination. The present calculation was performed on a (1 × 1) cell with one monolayer of adsorbed molecules. Especially, a series of cases implying CO molecules adsorbed in various geometrical configurations has been examined. The corresponding adsorption energy varies in the range of −0.17 to −0.10 eV. The adsorption energy of a CO₂ molecule directly located above an O surface atom (called O_s) is of the order of −0.18 eV. The O-C distance length is then 1.24 Å and the O-C-O and O-C-O_s angles are 134.0° and 113.0°, respectively. For NO adsorption, the most important induced structural changes are the followings: (i) the N-O bond is broken when a NO molecule is absorbed on a Ba-O_s bridge site. In that case, N and O atoms are located above an O and a Ba surface atom, respectively, whereas the O-Ba-O_s and N-O_s-Ba angles are 106.5° and 63.0°, respectively. The N-O distance is as large as 2.58 Å and the adsorption energy is as much as −2.28 eV. (ii) In the second stable position, the NO molecule has its N atom adsorbed above an O_s atom, the N-O axis being tilted toward the Ba atom. The N-O_s-Ba angle is then 41.1° while the adsorption energy is only −0.10 eV. At last, the local densities of states around C, O as well as N atoms of the considered adsorbed molecules have also been discussed.     

The role of carbon impurities on the Si(0 0 1)-c(4 × 4) surface reconstruction: Theoretical calculations

In this work we employ the state-of-the-art pseudopotential method, within a generalized gradient approximation to the density functional theory, combined with a recently developed method for the calculation of HREELS spectra to study a series of different proposed models for carbon incorporation on the silicon (0 0 1) surface. A fully discussion on the geometry, energetics and specially the comparison between experimental and theoretical STM images and electron energy loss spectra indicate that the Si(1 0 0)-c(4 × 4) is probably induced by Si-C surface dimers, in agreement with recent experimental findings.     

First-principle study of NO adsorption on the LaFeO3 (0 1 0) surface

The adsorption of NO molecule on the LaFeO₃ (0 1 0) surface was studied using first-principle calculations based on density functional theory. The calculated results indicate that the Fe-top site is the most favorable for NO adsorption. The N-O bond length, Mulliken charge, and the N-O vibration frequency of the NO molecule are discussed after adsorption. The analysis results of the density of the states show that when NO is adsorbed with the Fe-NO configuration, the bonding mechanism is mainly from the interaction between the NO and the Fe d orbit.     

Adsorption of nitrogen-containing aromatic molecules on Si(1 1 1)-7 × 7

The adsorption configurations of pyrimidine and triazine on Si(1 1 1)-7 × 7 were investigated using high-resolution electron energy loss spectroscopy (HREELS) X-ray photoelectron spectroscopy and density functional theory calculations. The HREELS spectra of chemisorbed monolayer show the coexistence of the C(sp²)-H and C (sp³)-H stretching modes together with the observation of the unconjugated CN(C) vibrational feature suggesting that the carbon atom and its para-nitrogen atom of pyrimidine and triazine directly participate in binding with the surface to form Si-C and Si-N σ-linkages. The core levels of the C-atom and its opposite nitrogen atom directly binding with Si-atoms experience a down-shifting by 1.8-1.9 and 1.4-1.6 eV, respectively. These experimental findings are consistent with the density functional theory calculations indicating that the carbon atom and its para-nitrogen atom favorably link with the adjacent adatom and rest atom pair to form C-Si and N-Si linkages.     

Effect of hydrogenation on the electronic structure of the P/Si(0 0 1)-(1 × 2) surface

Ab initio calculations, based on pseudopotentials and density functional theory (DFT), have been performed to investigate the effect of hydrogenation on the electronic properties of P/Si(0 0 1)-(1 × 2) surface. In parallel with this, the electronic band structure of the hydrogenated and non-hydrogenated P/Si(0 0 1)-(1 × 2) surface have been calculated for half- and full-monolayer P. For the mixed Si-P dimer structure, we have identified two occupied and one unoccupied surface state, which correspond to 0.5 ML coverage of P. When this surface is terminated with H, we see that two occupied states completely disappeared and that one unoccupied state is shifted towards the conduction band. A similar calculations for the 1 ML coverage of P have been also carried out. It is seen that the unoccupied state C₁ appeared in the P/Si(0 0 1)-(1 × 2) surface is passivated when this surface is terminated with the H atoms. To explain the nature of the surface states, we have also plotted the total and partial charge densities at the point of the Surface Brillouin Zone (SBZ).     

Adsorption of water on TiN (1 0 0), (1 1 0) and (1 1 1) surfaces: A first-principles study

We use first-principles density functional theory-based calculations in the analysis of the interaction of H₂O with (1 0 0), (1 1 0) and (1 1 1) surfaces of TiN, and develop understanding in terms of surface energies, polarity of the surface and chemistry of the cation, through comparison with H₂O adsorption on ZrN. While water molecule physisorbs preferentially at Ti site of (1 0 0) and (1 1 1) surfaces, it adsorbs dissociatively on (1 1 0) surface of TiN with binding stronger than almost 1.32 eV/molecule. Our analysis reveals the following general trends: (a) surfaces with higher energies typically lead to stronger adsorption, (b) dissociative adsorption of H₂O necessarily occurs on a charge neutral high energy surface and (c) lower symmetry of the (1 1 0) plane results in many configurations of comparable stability, as opposed to the higher symmetry (1 0 0) and (1 1 1) surfaces, which also consistently explain the results of H₂O adsorption on MgO available in literature. Finally, weaker adsorption of H₂O on TiN than on ZrN can be rationalized in terms of greater chemical stability of Ti arising from its ability to be in mixed valence.     

Metal-insulator transition in the In/Si(1 1 1) surface

The metal-insulator transition observed in the In/Si(1 1 1)-4 × 1 reconstruction is studied by means of ab initio calculations of a simplified model of the surface. Different surface bands are identified and classified according to their origin and their response to several structural distortions. We support the, recently proposed [C. González, J. Ortega, F. Flores, New J. Phys. 7 (2005) 100], combination of a shear and a Peierls distortions as the origin of the metal-insulator transition. Our results also seem to favor an electronic driving force for the transition.     

High resolution analysis of the rotational levels of the (0 0 0), (0 1 0), (1 0 0), (0 0 1), (0 2 0), (1 1 0) and (0 1 1) vibrational states of SO2

A high resolution (0.0018 cm⁻¹) Fourier transform instrument has been used to record the spectrum of an enriched ³⁴S (95.3%) sample of sulfur dioxide. A thorough analysis of the ν₂, 2ν₂ − ν₂, ν₁, ν₁ + ν₂ − ν₂, ν₃, ν₂ + ν₃ − ν₂, ν₁ + ν₂ and ν₂ + ν₃ bands has been carried out leading to a large set of assigned lines. From these lines ground state combination differences were obtained and fit together with the existing microwave, millimeter, and terahertz rotational lines. An improved set of ground state rotational constants were obtained. Next, the upper state rotational levels were fit. For the (0 1 0), (1 1 0) and (0 1 1) states, a simple Watson-type Hamiltonian sufficed. However, it was necessary to include explicitly interacting terms in the Hamiltonian matrix in order to fit the rotational levels of the (0 2 0), (1 0 0) and (1 0 1) states to within their experimental accuracy. More explicitly, it was necessary to use a ΔK = 2 term to model the Fermi interaction between the (0 2 0) and (1 0 0) levels and a ΔK = 3 term to model the Coriolis interaction between the (1 0 0) and (0 0 1) levels. Precise Hamiltonian constants were derived for the (0 0 0), (0 1 0), (1 0 0), (0 0 1), (0 2 0), (1 1 0) and (0 1 1) vibrational states.     

Adsorption and dissociation of O2 on the Cu2O(1 1 1) surface: Thermochemistry, reaction barrier

The adsorption and dissociation of O₂ on the perfect and oxygen-deficient Cu₂O(1 1 1) surface have been systematically studied using periodic density functional calculations. Different kinds of possible modes of atomic O and molecular O₂ adsorbed on the Cu₂O(1 1 1) surface are identified: atomic O is found to prefer threefold 3Cu site on the perfect surface and O_vacancy site on the deficient surface, respectively. Cu_CUS is the most advantageous site with molecularly adsorbed O₂ lying flatly over singly coordinate Cu_CUS-Cu_CSA bridge on the perfect surface. O₂ adsorbed dissociatively on the deficient surface, which is the main dissociation pathway of O₂, and a small quantity of molecularly adsorbed O₂ has been obtained. Further, possible dissociation pathways of molecularly adsorbed O₂ on the Cu₂O(1 1 1) surface are explored, the reaction energies and relevant barriers show that a small quantity of molecularly adsorbed O₂ dissociation into two O atoms on the deficient surface is favorable both thermodynamically and kinetically in comparison with the dissociation of O₂ on the perfect surface. The calculated results suggest that the presence of oxygen vacancy exhibits a strong chemical reactivity towards the dissociation of O₂ and can obviously improve the catalytic activity of Cu₂O, which is in agreement with the experimental observation.