Effect of Mg/Co on the properties of CdS thin films deposited by spray pyrolysis technique

Mg, Co doped and (Mg, Co) co-doped CdS thin films were prepared using chemical spray pyrolysis method. It is observed from the X-ray diffraction study that the deposited film exhibit cubic phase of CdS with preferred orientation along the (111) plane and incorporation of Mg and Co has been confirmed form energy dispersive analysis and XPS analysis as well. The doped and codoped CdS thin films exhibit 1LO and 2LO vibrations as confirmed by Raman spectrum. The core level XPS spectra ensures the incorporation of doping elements precisely. The morphological variations due to the incorporation of Co and Mg in CdS thin films have been observed by FE-SEM. The particle sizes and crystalline nature have been revealed from HRTEM images and corresponding SAED patterns. The co-doped CdS thin films show a significant shift blue in absorption spectrum. Improved magnetic properties have been observed for the co-doped CdS thin films.     

Structural, optical and photoelectrochemical characterization of CdS nanowire synthesized by chemical bath deposition and wet chemical etching

Nanocrystalline thin films of CdS have been grown onto flexible plastic and titanium substrates by a simple and environmentally benign chemical bath deposition (CBD) method at room temperature. The films consist of clusters of CdS nanoparticles. The clusters of CdS nanoparticles in the films were successfully converted into nanowire (NW) networks using chemical etching process. The possible mechanism of the etching phenomenon is discussed. These films were examined for their structural, surface morphological and optical properties by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectrophotometry techniques, respectively. Photoelectrochemical (PEC) investigations were carried out using cell configuration as n-CdS/(1 M NaOH + 1 M Na₂S + 1 M S)/C. The film of nanowires was found to be hexagonal in structure with the preferential orientation along the (0 0 2) plane. The nanowires have widths in the range of 50-150 nm and have lengths of the order of a few micrometers. Optical studies reveal that the CdS nanowires have value of band gap 2.48 eV, whereas it is 2.58 eV for nanoparticles of CdS. Finally, we report on the ideality of junction improvement of PEC cells when CdS nanoparticles photoelectrode converted into nanowires photoelectrode.     

The thermoluminescence properties of CdS films under nitrogen atmosphere

Chemically deposited cadmium sulphide (CdS) films have been grown on glass at 60 °C and annealed at nitrogen atmosphere at different temperatures. The as-deposited film shows a mix phase of cubic and hexagonal. Once the film subjected to annealing the hexagonal phase becomes dominant and the crystal size increases due to these changes optical band gap energy decreases from 2.44 to 2.28 eV. The electrical conductivity increases depending on temperature and the film annealed at 423 K shows the highest conductivity. Thermoluminescence (TL) intensity of the films was measured after irradiating the films with ⁹⁰Sr/⁹⁰Y β-source and the trap depths were calculated after the TL curves deconvoluted by using the computer glow curve deconvolution (CGCD) method. It is observed that the as-deposited film has three different trap depths, at around 0.257, 0.372, and 0.752 eV corresponding to 383, 473, and 608 K, respectively.     

The crystalline structure,conductivity and optical properties of Co-doped ZnO thin films

Transparent conductive Co-doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of cobalt (Co)-doped ZnO (between 0 and 3 wt%) thin films were grown on glass substrate at 350 °C. The thin films were annealed at 500 °C for improvement of the physical properties. Nanocrystalline films with hexagonal wurtzite structure and a strong (0 0 2) preferred orientation were obtained. The maximum value of grain size G = 63.99 nm is attained with undoped ZnO film. The optical transmissions spectra showed that both the undoped and doped ZnO films have transparency within the visible wavelength region. The band gap energy decreased after doping from 3.367 to 3.319 eV when Co concentration increased from 0 to 2 wt% with slight increase of electrical conductivity of the films from 7.71 to 8.33 (Ω cm)⁻¹. The best estimated structure, optical and electrical results are achieved in Co-doped ZnO film with 2 wt%.     

Highly conductive and transparent laser ablated nanostructured Al: ZnO thin films

Al doped ZnO thin films are prepared by pulsed laser deposition on quartz substrate at substrate temperature 873 K under a background oxygen pressure of 0.02 mbar. The films are systematically analyzed using X-ray diffraction, atomic force microscopy, micro-Raman spectroscopy, UV-vis spectroscopy, photoluminescence spectroscopy, z-scan and temperature-dependent electrical resistivity measurements in the temperature range 70-300 K. XRD patterns show that all the films are well crystallized with hexagonal wurtzite structure with preferred orientation along (0 0 2) plane. Particle size calculations based on XRD analysis show that all the films are nanocrystalline in nature with the size of the quantum dots ranging from 8 to 17 nm. The presence of high frequency E₂ mode and longitudinal optical A₁ (LO) modes in the Raman spectra suggest a hexagonal wurtzite structure for the films. AFM analysis reveals the agglomerated growth mode in the doped films and it reduces the nucleation barrier of ZnO by Al doping. The 1% Al doped ZnO film presents high transmittance of ∼75% in the visible and near infrared region and low dc electrical resistivity of 5.94 × 10⁻⁶ Ω m. PL spectra show emissions corresponding to the near band edge (NBE) ultra violet emission and deep level emission in the visible region. Nonlinear optical measurements using the z-scan technique shows optical limiting behavior for the 5% Al doped ZnO film.     

Structural, electrical and optical properties of Gd doped and undoped ZnO:Al (ZAO) thin films prepared by RF magnetron sputtering

The influence of the gadolinium doping on the structural features and opto-electrical properties of ZnO:Al (ZAO) films deposited by radio frequency (RF) magnetron sputtering method onto glass substrates was investigated. X-ray analysis showed that the films were polycrystalline fitting well with a hexagonal wurtzite structure and have preferred orientation in [0 0 2] direction. The Gd doped ZAO film with a thickness of 140 nm showed a high visible region transmittance of 90%. The optical band gap was found to be 3.38 eV for pure ZnO film and 3.58 eV for ZAO films while a drop in optical band gap of ZAO film was observed by Gd doping. The lowest resistivities of 8.4 × 10⁻³ and 10.6 × 10⁻³ Ω cm were observed for Gd doped and undoped ZAO films, respectively, which were deposited at room temperature and annealed at 150 °C.     

Structural and optical properties of CdS thin films

CdS thin films are deposited onto glass substrates by vacuum evaporation at 373 K and the films are annealed at different temperatures. Rutherford backscattering spectrometry (RBS) and X-ray diffraction techniques are used to determine the thickness, composition, crystalline structure and grain size of the films. The films show a predominant hexagonal phase with small crystallites. The optical band gap of the films are estimated using the optical transmittance measurements. A decrease in the band gap is observed for the annealed films. The Raman peak position of the CdS A₁ (LO) mode did not change much whereas, the full width at half maximum (FWHM) is found to decrease with annealing.     

Synthesis and characterization of CdS/PVA nanocomposite films

A series CdS/PVA nanocomposite films with different amount of Cd salt have been prepared by means of the in situ synthesis method via the reaction of Cd²⁺-dispersed poly vinyl-alcohol (PVA) with H₂S. The as-prepared films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), ultraviolet-visible (UV-vis) absorption, photoluminescence (PL) spectra, Fourier transform infrared spectroscope (FTIR) and thermogravimetric analysis (TGA). The XRD results indicated the formation of CdS nanoparticles with hexagonal phase in the PVA matrix. The primary FTIR spectra of CdS/PVA nanocomposite in different processing stages have been discussed. The vibrational absorption peak of CdS bond at 405 cm⁻¹ was observed, which further testified the generation of CdS nanoparticles. The TGA results showed incorporation of CdS nanoparticles significantly altered the thermal properties of PVA matrix. The photoluminescence and UV-vis spectroscopy revealed that the CdS/PVA films showed quantum confinement effect.     

Investigation of CdS and CdTe thin films and influence of CdCl2 on CdTe/CdS structure

CdTe/CdS heterojunction solar cell structure has been fabricated using simple, easy and low-cost methods. To fabricate this structure, CdS and CdTe thin films are deposited onto FTO-coated conducting glass substrates by chemical bath deposition (CBD) and electrodeposition method, respectively. The optimized growth conditions are chosen for both CdS and CdTe films by investigating the optical, structural and morphological properties of both the as-deposited and annealed films. Optical measurement showed that CdS films have higher transmittance and lower absorbance, and CdTe films have lower transmittance and higher absorbance in the near infrared region. The band gap of CdS films is estimated to lie in the range 2.29–2.41 eV and that of CdTe films is in the range 1.53–1.55 eV. X-ray diffraction (XRD) study reveals that CdS and CdTe films are polycrystalline with preferential orientation of (1 1 1) plane. Scanning electron microscopy (SEM) study reveals that both films are smooth, void-free and uniformly distributed over the surface of the substrate. Fabricated CdTe/CdS structure showed the anticipated rectifying behaviour, and the rectifying behaviour is observed to improve due to CdCl₂ treatment.     

Preparation and characterization of CdS/Si coaxial nanowires

CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140 nm and c=0.6719 nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305 cm⁻¹, 2LO at 601 cm⁻¹, A₁-TO at 212 cm⁻¹, E₁-TO at 234 cm⁻¹, and E₂ at 252 cm⁻¹. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590 nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively.     

Microstructural, optical and photocatalytic properties of CdS doped TiO2 thin films

CdS doped TiO₂ thin films (with CdS content=0, 3, 6, 9 and 12 at%) were grown on glass substrates. The X-ray diffraction analysis revealed that the films are polycrystalline of monoclinic TiO₂ structure. The microstructure parameters of the films such as crystallite size (D_ν) and microstrain (e) are calculated. Both the crystallites size and the microstrain are decreased with increasing CdS content. The optical constants have been determined in terms of Murmann's exact equations. The refractive index and extinction coefficient are increased with increasing CdS content. The optical band gap is calculated in the strong absorption region. The possible optical transition in these films is found to be an allowed direct transition. The values of E_g^opt are found to decrease as the CdS content increased. The films with 3 at% CdS content have better decomposition efficiency than undoped TiO₂. The films with 6 at% and 9 at% CdS content have decomposition efficiency comparable to that of undoped TiO₂, although they have lower band gap. The CdS doped TiO₂ could have a better impact on the decomposing of organic wastes.     

Optical and structural properties of CdS thin films grown by chemical bath deposition doped with Ag by ion exchange

In this work thin CdS films using glycine as a complexing agent were fabricated by chemical bath deposition and then doped with silver (Ag), by an ion exchange process with different concentrations of AgNO₃ solutions. The CdS films were immersed in silver solutions using different concentrations during 1 min for doping and after that the films were annealed at 200 °C during 20 min for dopant diffusion after the immersion on the AgNO₃ solutions. The aim of this research was to know the effects of different concentrations of Ag on the optical and structural properties of CdS thin films. The optical band gap of the doped films was determined by transmittance measurements, with the results of transmittance varying between 35% and 70% up to 450 nm in the electromagnetic spectra and the band gap varying between 2.31 and 2.51 eV depending of the silver content. X-ray photoelectron spectroscopy was used to study the influence of silver on the CdS:Ag films, as a function of the AgNO₃ solution concentration. The crystal structure of the thin CdS:Ag films was studied by the X-ray diffraction method and the film surface morphology was studied by atomic force microscopy. Using the ion exchange process, the CdS films’ structural, optical and electric characteristics were modified according to silver nitrate concentration used.     

CdS thin films growth by fast evaporation with substrate rotation

CdS thin films were grown by fast evaporation technique combined with substrate rotation. The source evaporation temperature was maintained at 600 °C and the substrate temperature at 350 °C with background pressure of 1.0 m Torr. The substrates were corning glass 2947 with dimension of 1 in. × 1 in. rotate at 500 rpm during the growth. In order to verify the quality of the CdS films, the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical measurements. The films shown a flat uniformity thickness with growth rate of ∼3.5 nm/s, the orientation was in the cubic-(1 1 1) and hexagonal-(0 0 2) plane in dependence of the growth time, grain size ∼5 nm, roughness uniformity ∼2.7 nm, transmittance in the visible region spectrum ∼80%, energy band gap between 2.39 and 2.42 eV and short circuit photocurrent density (J_SC) losses in the CdS films of 4.7 mA/cm².     

Correlation between the structural and optical properties of Co doped ZnO thin films prepared at different film thickness

Cobalt doped zinc oxide (ZnO:Co) thin films were deposited on glass substrates by ultrasonic spray technique decomposition of Zinc acetate dihydrate and cobalt acetate tetrahydrate in an ethanol solution with film thickness. All films are polycrystalline with a hexagonal wurtzite-type structure with a preferential orientation according to the direction (0 0 2), with the maximum crystallite size was found of 59.42 nm at 569 nm. The average transmittance of all films is about 65–95% measured by UV–vis analyzer. The band gap energy increased from 3.08 to 3.32 eV with increasing the film thickness from 192 to 569 nm. The increase of the electrical conductivity with increases in the film thickness to maximum value of 9.27 (Ω cm)⁻¹ can be explained by the increase in carrier concentration and displacement of the electrons of the films. The correlation between the band gap and crystal structure suggests that the band gap energy of Co doped ZnO is influenced by the crystallite size and the mean strain.     

Deposition and characterization of transparent and conductive sprayed ZnO:B thin films

Highly transparent and conductive Boron doped zinc oxide (ZnO:B) thin films were deposited using chemical spray pyrolysis (CSP) technique on glass substrate. The effect of variation of boron doping concentration in reducing solution on film properties was investigated. Low angle X-ray analysis showed that the films were polycrystalline fitting well with a hexagonal wurtzite structure and have preferred orientation in [002] direction. The films with resistivity 2.54×10⁻³ Ω-cm and optical transmittance >90% were obtained at optimized boron doping concentration. The optical band gap of ZnO:B films was found ∼3.27 eV from the optical transmittance spectra for the as-deposited films. Due to their excellent optical and electrical properties, ZnO:B films are promising contender for their potential use as transparent window layer and electrodes in solar cells.     

Nanotwinning in CdS quantum dots

High resolution transmission electron microscopy, X-ray diffraction and photoluminescence measurements are carried out in order to study the defects in CdS quantum dots (QDs), synthesized in cubic phase by chemical co-precipitation method. The nanotwinning structures in CdS quantum dots (∼2.7 nm) are reported for the first time. Mostly CdS QDs are characterized by existence of nanotwin structures. The twinning structures are present together with stacking faults in some QDs while others exist with grain boundaries. Raman spectroscopy analysis shows intense and broad peaks corresponding to fundamental optical phonon mode (LO) and the first over tone mode (2LO) of CdS at 302 cm⁻¹ and 605 cm⁻¹ respectively. A noticeable shift is observed in Raman lines indicating the effect of phonon confinement. Fourier transform infrared spectroscopy analysis confirms the presence of Cd–S stretching bands at 661 cm⁻¹ and 706 cm⁻¹. The photoluminescence spectrum shows emission in yellow and red regions of visible spectrum. The presence of stacking faults and other defects are explained on the basis of X-rays diffraction patterns and are correlated with photoluminescence spectrum. These nanotwinning and microstructural defects are responsible for different emissions from CdS QDs.     

Optical characterization and determination of carrier density of ultrasonically sprayed CdS:Cu films

In this work, CdS and Cu doped CdS films (at the Cu percentages of 1, 3 and 5) have been deposited onto glass substrates at 350 ± 5 °C by ultrasonic spray pyrolysis technique and their application potential for photovoltaic solar cells have been investigated. Optical properties and thicknesses of the films have been investigated by spectroscopic ellipsometry (SE). Ellipsometric angle ψ was used as the source point for optical characterizations. The optical constants (n and k) and the thicknesses of the films have been fitted according to Cauchy model. Also, optical properties of the produced films have been analyzed by transmittance and reflectance spectra. Refractive index (n), extinction coefficient (k) and reflectance (R) spectra have been taken by spectroscopic ellipsometer, while transmittance spectra have been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap type and value of the films. Mott-Schottky (M-S) measurements have been made to determine the conductivity type and carrier concentration of the films. Samples showed n-type conductivity and carrier concentration of undoped CdS sample was found to be 1.19 × 10¹⁹ cm⁻³. Also, it was concluded that Cu doping has an acceptor effect in CdS samples. From the results of these investigations, the application potential of CdS:Cu films for photovoltaic solar cells as window layer was searched.     

Preparation and characterization of Mg-doped ZnO thin films by sol-gel method

Undoped and Mg-doped ZnO thin films were deposited on Si(1 0 0) and quartz substrates by the sol-gel method. The thin films were annealed at 873 K for 60 min. Microstructure, surface topography and optical properties of the thin films have been measured by X-ray diffraction (XRD), atomic force microscope (AFM), UV-vis spectrophotometer, and fluorophotometer (FL), respectively. The XRD results show that the polycrystalline with hexagonal wurtzite structure are observed for the ZnO thin film with Mg:Zn = 0.0, 0.02, and 0.04, while a secondary phase of MgO is evolved for the thin film with Mg:Zn = 0.08. The ZnO:Mg-2% thin film exhibits high c-axis preferred orientation. AFM studies reveal that rms roughness of the thin films changes from 7.89 nm to 16.9 nm with increasing Mg concentrations. PL spectra show that the UV-violet emission band around 386-402 nm and the blue emission peak about 460 nm are observed. The optical band gap calculated from absorption spectra and the resistivity of the ZnO thin films increase with increasing Mg concentration. In addition, the effects of Mg concentrations on microstructure, surface topography, PL spectra and electrical properties are discussed.     

Light emitting CdS quantum dots in PMMA: Synthesis and optical studies

Freshly prepared CdS-quantum dots (QDs) in DMF (clear pale solution) when loaded in polymethylmethacrylate (PMMA) lead to excellent optical properties. The tuning of the absorption and emission wavelengths via experimentally control parameters is considered novel and significant. The absorption band for CdS was observed at about 370 nm in polymeric matrix. The blue, green and orange light emissions from such composite solution were tuned and stabilized by simply varying the concentration of CdS, cadmium and sulphur in the final product. Photoluminescence (PL) measurement with 2% CdS loading showed band-edge emissions from the composite with only about 20-25 nm Stokes shift in emission wavelength. Observation of such optical properties indicated that the composite has narrow particle size distribution and particle diameter may well be below 10 nm. X-ray diffraction (XRD) patterns of the film with higher loading of CdS showed broad pattern for hexagonal CdS. Thermo-gravimetric analysis (TGA) of CdS/PMMA composite film revealed that it has better thermal stability than PMMA alone. Transmission electron microscopy (TEM) showed agglomerated tiny dots in nano-meter regime.     

Temperature dependence of excitonic luminescence from nanocrystalline ZnO films

The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect.