The surface leakage currents of CdZnTe wafers

The surface leakage currents (SLCs) and surface sheet resistances (SSRs) of CdZnTe (1 1 0), (1 1 1) A and (1 1 1) B surfaces after etching with Br-MeOH solution, chemo-mechanical polishing (CMP) and passivation were measured in the parallel stripe model, respectively. Meanwhile the surface compositions were determined by X-ray photoelectron spectroscopy (XPS). Te enrichment introduced by etching with Br-MeOH resulted in the increase of the SLCs of CdZnTe wafers. After chemo-mechanical polishing, Te enrichment was removed, and SLCs decreased. CdZnTe (1 1 1) B without Te enrichment possesses higher SLC than that of (1 1 1) A, and (1 1 0) surface has the lowest SLC, which should be attributed to the lower surface dangling bonds. Passivation treatment with NH₄F + H₂O₂ is an effective method to decrease SLCs of CdZnTe, by which the SLC was decreased two orders.     

Effect of surface preparation on the properties of Au/p-Cd1−xZnxTe

The effect of bromine methanol (BM) etching and NH₄F/H₂O₂ passivation on the Schottky barrier height between Au contact and semi-insulated (SI) p-Cd_1−xZn_xTe (x ≈ 0.09-0.18) was studied through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Near-infrared (NIR) spectroscopy technique was utilized to determine the Zn concentration. X-ray photoelectron spectroscopy (XPS) for surface composition analysis showed that BM etched sample surface left a Te⁰-rich layer, however, which was oxidized to TeO₂ and the surface [Te]/([Cd] + [Zn]) ratio restored near-stoichiometry after NH₄F/H₂O₂ passivation. According to I-V measurement, barrier height was 0.80 ± 0.02-0.85 ± 0.02 eV for Au/p-Cd_1−xZn_xTe with BM etching, however, it increased to 0.89 ± 0.02-0.93 ± 0.02 eV with NH₄F/H₂O₂ passivation. Correspondingly, it was about 1.34 ± 0.02-1.43 ± 0.02 eV and 1.41 ± 0.02-1.51 ± 0.02 eV by C-V method.     

Investigation of etch characteristics of non-polar GaN by wet chemical etching

We characterized the surface defects in a-plane GaN, grown onto r-plane sapphire using a defect-selective etching (DSE) method. The surface morphology of etching pits in a-plane GaN was investigated by using different combination ratios of H₃PO₄ and H₂SO₄ etching media. Different local etching rates between smooth and defect-related surfaces caused variation of the etch pits made by a 1:3 ratio of H₃PO₄/H₂SO₄ etching solution. Analysis results of surface morphology and composition after etching by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that wet chemical etching conditions could show the differences in surface morphology and chemical bonding on the a-plane GaN surface. The etch pits density (EPD) was determined as 3.1 × 10⁸ cm⁻² by atom force microscopy (AFM).     

Improving p-type contact characteristics by Ni-assisted annealing and effects on surface morphologic evolution of InGaN LED films grown on Si (1 1 1)

Ni thin layer was deposited to assist to activate p-GaN and then was removed. The process was named Ni-assisted annealing (NA). We investigate the surface morphology and p-type contact behaviors of InGaN LED films grown on Si (1 1 1) substrates. Compared with conventional thermal annealing (TA), NA can improve the p-type contact characteristic at lower anneal temperature and a smaller specific contact resistivity (ρ_c = 6.1 × 10⁻⁵ Ω cm²) employing nonalloy Pt electrode was obtained. A wet etching method using acid-hydrogen peroxide was adopted to boil films surface after activation. We found that some nano-pits appeared on surfaces while original surface step structure was still clearly visible, which shows a defect-selective etching characteristic. Otherwise, we demonstrated that the surface morphology could be affected by NA while independent to TA. Some mechanisms for experimental phenomena were also discussed in the letter.     

Surface studies of 2,4-pentanedione on γ-Al2O3/NiAl (1 0 0) and NiAl (1 0 0)

The chemical compound 2,4-pentanedione (Hacac) has been shown to etch the oxidized metal surfaces metals such as copper and nickel, but not their unoxidized surfaces. Here it is shown that on the γ-Al₂O₃/NiAl (1 0 0) surface (oxidized NiAl (1 0 0)) etching of aluminum occurs at 170 K and 750 K. Reflection-absorption infrared spectroscopy (RAIRS) is used to show that Hacac binds to both the clean, metallic and oxidized surfaces, but decomposition and combustion products dominate on the metallic surface and no etching occurs. The binding process that involves a deprotonation reaction of the enol species was identified by redshift in the carbonyl peaks and the appearance of an Al-H peak observed in the IR spectrum. The implication of these results is that there is both an unusual low temperature and high temperature etching of the alumina by bound acac.     

Chemical and electronic properties of sulfur-passivated InAs surfaces

Treatment with ammonium sulfide ((NH₄)₂S_x) solutions is used to produce model passivated InAs(0 0 1) surfaces with well-defined chemical and electronic properties. The passivation effectively removes oxides and contaminants, with minimal surface etching, and creates a covalently bonded sulfur layer with good short-term stability in ambient air and a variety of aqueous solutions, as characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and Hall measurements. The sulfur passivation also preserves the surface charge accumulation layer, increasing the associated downward band bending.     

Effects of in situ thermal annealing on the structural, optical, and electrical properties in Hg0.7Cd0.3Te epilayers grown on CdTe buffer layers

Scanning electron microscopy (SEM), Fourier transform infrared (FTIR) transmission, and Hall effect measurements were performed to investigate the structural, optical, and electrical properties of as-grown and in situ-annealed Hg_0.7Cd_0.3Te epilayers grown on CdTe buffer layers by using molecular beam epitaxy. After the Hg_0.7Cd_0.3Te epilayers had been annealed in a Hg-cell flux atmosphere, the SEM images showed that the surface morphologies of the Hg_0.7Cd_0.3Te thin films were mirror-like with no indication of pinholes or defects, and the FTIR spectra showed that the transmission intensities had increased in comparison to that of the as-grown Hg_0.7Cd_0.3Te epilayer. Hall-effect measurements showed that n-Hg_0.7Cd_0.3Te epilayers were converted to p-Hg_0.7Cd_0.3Te epilayers. These results indicate that the surface, optical, and electrical properties of the Hg_1 − xCd_xTe epilayers are improved by annealing and that as-grown n-Hg_1 − xCd_xTe epilayers can be converted to p-Hg_1 − xCd_xTe epilayers by in situ annealing.     

Dry etching of CuCrO2 thin films

Highly conducting films of p-type CuCrO₂ are attractive as hole-injectors in oxide-based light emitters. In this paper, we report on the development of dry etch patterning of CuCrO₂ thin films. The only plasma chemistry that provided some chemical enhancement was Cl₂/Ar under inductively coupled plasma conditions. Etch rates of ∼500 Å min⁻¹ were obtained at chuck voltages around −300 V and moderate source powers. In all cases, the etched surface morphologies were improved relative to un-etched control samples due to the smoothing effect of the physical component of the etching. The threshold ion energy for the onset of etching was determined to be 34 eV. Very low concentrations (≤1 at.%) of residual chlorine were detected on the etched surfaces but could be removed by simple water rinsing.     

In situ HCl etching of Si for the elaboration of locally misorientated surfaces

We have studied the in situ HCl etching of Si active areas on patterned wafers. After some in situ HCl etching at 20 Torr of Si(1 0 0), we have locally obtained 2 μm long areas with misorientation angles around 4.5° towards 〈1 1 0〉. Furthermore, we have evidenced a recess shape transition from convex (T ≤ 865 °C) to concave (T ≥ 895 °C) as the etch temperature increases, with a nearly flat surface with no facets at T = 880 °C. The morphology of the etched structures at a given time, temperature and PHCl/PH₂ ratio will be a function of the slope lengths and the pattern dimensions. Different kinds of surfaces (rounded areas, facets) were obtained in 3.5 μm × 3.5 μm Si windows after HCl etching at 850 °C during 300 s, depending on the stress within. Thermal oxidations can indeed be used to increase by 65 MPa up to 110 MPa the compressive stress in those Si windows which are bordered by SiO₂ shallow trench isolation. An increase of the misorientation angle from 4.5° up to 6° occurred after the above-mentioned HCl etch when switching from conventional to highly strained Si windows. For the shortest etching times studied here (150 s), a selective etching of 3.5 μm × 3.5 μm Si windows edges is responsible for the misorientation. The etch is then more uniform. Stress gradients might consequently be one of the main misorientation causes. We have also probed the influence of the shallow trench isolation (STI) thickness on the misorientation. A morphological difference before HCl etching has been shown to be responsible for the transition from sloped to rounded areas. A local loading effect may prevail in this case.     

Evaluation of recipes for obtaining single terminated perovskite oxide substrates

We have re-assessed different methods to obtain single terminated perovskite oxide substrate surfaces of SrTiO₃, LaAlO₃ and NdGaO₃. The surfaces have been probed by a combination of atomic and lateral force microscopy, X-ray photoelectron spectroscopy and reflection high-energy electron diffraction. (0 0 1)SrTiO₃ surfaces were prepared with HF or plasma etching and annealing, (0 0 1)LaAlO₃ surfaces were prepared with or without HCl etching and a consecutive annealing at 750-1100 °C, and (1 1 0)NdGaO₃ surfaces were only annealed. Two of the recipes have previously been suggested to result in A-site terminated surfaces. However, except for the case of high-temperature annealed LaAlO₃ where we observe a double-terminated surface, our data suggest that the single terminated surfaces obtained by these methods were of B-site type.     

Transparent water repellent silica films by sol-gel process

Non-wettable surfaces with high contact angles and facile sliding angle of water droplets have received tremendous attention in recent years. The present paper describes the room temperature (∼27 °C) synthesis of dip coated water repellent silica coatings on glass substrates using iso-butyltrimethoxysilane (iso-BTMS) as a co-precursor. Emphasis is given to the influence of the hydrophobic reagent (iso-BTMS) on the water repellent properties of the silica films. Silica sol was prepared by keeping the molar ratio of tetraethoxysilane (TEOS) precursor, methanol (MeOH) solvent, water (H₂O) constant at 1:16.53:8.26 respectively, with 0.01 M NH₄F throughout the experiment and the molar ratio of iso-BTMS/TEOS (M) was varied from 0 to 0.965. The effect of M on the surface structure and hydrophobicity has been researched. The static water contact angle values of the silica films increased from 65° to 140° and water sliding angle values decreased from 42° to 16° with an increase in the M value from 0 to 0.965. The water repellent silica films are thermally stable up to a temperature of 280 °C and above this temperature the film shows hydrophilic behavior. The water repellent silica films were characterized by the Fourier Transform Infrared (FT-IR) Spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), % of optical transmission, thermal and chemical aging tests, humidity tests, static and dynamic water contact angle measurements.     

Electron-assisted chemical etching of oxidized chromium

Electron-assisted chemical etching of oxidized chromium, CrO_x, has been studied by scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and atomic force microscopy (AFM). Two model substrates were used—10 nm CrO_x deposited on Si(1 0 0) that was covered with either native oxide or a 20 nm Au/Pd alloy film. Using chlorine and/or oxygen as etching gases, the experiments were conducted in a customized high vacuum system, equipped with a high density electron source and a low pressure reaction cell. On both substrates, electron-assisted chemical etching of CiO_x was detected by SEM, EDS and AFM. Making the method questionable for etching applications, there is substantial substrate damage associated with the etching. The SEM images indicate strongly inhomogeneous material removal, apparently initiated and propagated from specific but unidentified sites. In the experiments involving the Au/Pd film, there was phase separation of Au and Pd, and dewetting to form metallic islands. AFM data show that the etched holes were as deep as 200 nm, confirming relatively rapid etching of the Si substrate after the top layer of Cr oxide was removed.     

Metal-support interactions in systems palladium deposited on oxidized tungsten surfaces

The morphology of the palladium (Pd) overlayers on oxidized tungsten (W) tips has been studied by Field Emission Microscopy (FEM). The effect of thermal treatment on the interaction of Pd with the support and chemisorption of CO on variously treated Pd-containing samples has been investigated. The results are discussed in relation to complementary macroscopic experiments by synchrotron radiation excited photoelectron spectroscopy (SRPES) and thermally programmed desorption (TPD) of carbon monoxide (CO) on a polycrystalline W foil. A distinct influence of support pre-oxidation on the Pd layer growth has been demonstrated. Two types of oxidized supports have been used: tungsten with oxygen pre-adsorbed at room temperature (RT) and then heated to 700 K (WO_x/W (RT) system) and tungsten oxidized at 1300 K (WO_x/W (1300 K) system) in situ. The surface of WO_x/W (1300 K) sample is fully oxidized in contrast to WO_x/W (RT), where the presence of un-oxidized patches has been demonstrated by SRPES measurements. A Pd layer grows on the WO_x/W (RT) surface mostly on the densely populated planes (1 1 0) and (2 1 1) of the W tip. Heating of this system up to 700 K results in disaggregation of the original Pd layer. Pd clusters on the tungsten tip oxidized at 1300 K are localized on the atomically rough (1 1 1) plane. The observed differences in CO adsorption on the aforementioned types of investigated samples can be attributed to differences in the chemical nature of their surfaces.     

A new laser direct etching method of indium tin oxide electrode for application to alternative current plasma display panel

For cost effective fabrication and time of alternative current plasma display panels (AC PDPs), an indium tin oxide (ITO) layer was patterned directly with a Q-switched diode pumped Nd:YVO₄ laser (λ = 1064 nm). As experimental results, 500 mm/s scan speed with 40 kHz repetition rate was suitable for the application to AC PDP ITO electrode. In comparison with the chemically wet-etched ITO patterns by photolithography method, laser-ablated ITO patterns showed the formation of shoulders at the edge of the ITO lines and a ripple-like structure of the etched bottom. By dipping the laser-ablated ITO films in the chemical etching solution for 30 s at 50 °C, the shoulders were effectively removed without affecting the discharging properties of AC PDP.     

Characterization of Ag nanoparticles on Si wafer prepared using Tollen's reagent and acid-etching

Ag nanoparticles on SiO₂/Si surfaces synthesized using the Tollen's reagent and a subsequent acid-etching were characterized using X-ray photoelectron spectroscopy (XPS). Combining the reduction of the Tollen's reagent and the chemical etching, one can create naked Ag nanoparticles with various sizes in the size range below ∼10 nanometers (nm). The reduced particle size by the chemical etching was identified using positive core level shifts with increasing etching time. Ag nanoparticles smaller than ∼3 nm undergo a reversible oxidation and reduction cycle by reacting with H₂O₂/H₂O and a subsequent heating under vacuum to 150 °C, which was not found for the bulk counterparts and larger particles, demonstrating unique chemical properties of nanoparticles compared to the bulk counterparts.     

Adsorption of water on TiN (1 0 0), (1 1 0) and (1 1 1) surfaces: A first-principles study

We use first-principles density functional theory-based calculations in the analysis of the interaction of H₂O with (1 0 0), (1 1 0) and (1 1 1) surfaces of TiN, and develop understanding in terms of surface energies, polarity of the surface and chemistry of the cation, through comparison with H₂O adsorption on ZrN. While water molecule physisorbs preferentially at Ti site of (1 0 0) and (1 1 1) surfaces, it adsorbs dissociatively on (1 1 0) surface of TiN with binding stronger than almost 1.32 eV/molecule. Our analysis reveals the following general trends: (a) surfaces with higher energies typically lead to stronger adsorption, (b) dissociative adsorption of H₂O necessarily occurs on a charge neutral high energy surface and (c) lower symmetry of the (1 1 0) plane results in many configurations of comparable stability, as opposed to the higher symmetry (1 0 0) and (1 1 1) surfaces, which also consistently explain the results of H₂O adsorption on MgO available in literature. Finally, weaker adsorption of H₂O on TiN than on ZrN can be rationalized in terms of greater chemical stability of Ti arising from its ability to be in mixed valence.     

The study on Schottky contact between Au and clean CdZnTe

Au Schottky contact was deposited on the clean CZT (1 1 0) and (1 1 1) A surface by molecular beam epitaxy (MBE). The real Schottky barrier heights were measured to be 0.738 eV and 0.566 eV by Synchrotron radiation photoemission spectroscopy (SRPES) respectively. The constituents of (1 1 0) and (1 1 1) A surfaces were measured by XPS. The Te concentration on (1 1 1) A surface is higher than that of (1 1 0) surface. And the difference of chemical reactivity and charge transfer were identified by Au 4f_7/2, Cd 4d, Te 4d_5/2 core level shifts using SRPES. Using metal-induced gap states model, the results of experiment were explained.     

The effect of pre-adsorbed atoms on the reactivity of methanol-d4 on Ru(0 0 1): Comparison between hydrogen and oxygen

The influence of pre-adsorbed H and O on the adsorption and decomposition of methanol-d₄ on Ru(0 0 1) surfaces is analysed by RAIRS. It is shown that the reactivity of CD₃OD at 90 K is not determined by the nature of the modifying atom nor by the structure of the pre-adsorbed layer: a low dose of CD₃OD (0.1 L) undergoes O-D bond breaking, yielding CD₃O-, both on Ru(0 0 1)-H (0.5 ? θ_H < 1 ML) and on Ru(0 0 1)-O (0.25 ? θ_O ? 0.6 ML) surfaces. At 90 K, methoxide-d₃ acquires a tilted configuration on all these surfaces, despite the fact that oxygen forms ordered phases whereas hydrogen (adsorbed at this temperature) does not. A fraction of the methoxide-d₃ undergoes C-D bond breaking at 110 K on all the modified surfaces, in a lower extent than on clean Ru(0 0 1). The stabilizing effect is more pronounced on the O modified layers, and is coverage dependent. The chemical nature of the pre-adsorbed atom is determinant of the unreacted methoxide geometry, as only oxygen is capable of inducing a reorientation of this species towards C_3v local symmetry. Confirmation of the adsorption geometries, both at 90 and 110 K, was obtained from the RAIR spectra of the selectively labelled CHD₂OH, adsorbed on the same surfaces. The long-range repulsive interactions between the pre-adsorbed atom and the final decomposition product at 130 K (carbon monoxide) are more evident on the denser O layer (0.6 ML), since this species does not remain on the surface. No partially hydrogenated intermediates were detected on the H modified surfaces, suggesting that, in case exchange reactions occur, they yield only gaseous products. On the contrary, direct evidence for the participation of pre-adsorbed O was supplied by the detection of deuterated formate (DCOO) for θ_O = 0.6 ML.     

Synthesis and characterization of porous silicon layers for 1D photonic crystal application

In this paper, we studied the optical and physical properties of electrochemically prepared porous silicon layers. The atomic force microscopy analysis showed that the etching depth, pore diameter and surface roughness increase as the etching time increased from 30 to 50 mA/cm². By tuning two current densities J₁ = 50 mA/cm² and J₂ = 30 mA/cm², two samples of 1D porous silicon photonic crystals were fabricated. The layered structure of 1D photonic crystals has been confirmed by scanning electron microscopy measurement which showed white and black strips of two distinct refractive index layers. Finally, the measured reflectance spectra of 1D porous silicon photonic crystals were compared with simulated results.     

Effects of substrate temperature upon the properties of ZnMgTe layer grown by MOVPE

The effects of substrate temperature upon the optical property, composition and surface morphology have been investigated on nominally undoped Zn_1−xMg_xTe layers grown on (1 0 0) ZnTe substrates by atmospheric pressure metal organic vapor phase epitaxy (MOVPE). It was found that Mg composition increases with decreasing substrate temperature. The result of low temperature photoluminescence (PL) measurement suggests that the optical quality of Zn_1−xMg_xTe layers becomes better with decreasing substrate temperature. On the other hand, there is a narrow range of optimal substrate temperature for a smooth surface morphology. For all the layers, a two-mode behavior with ZnTe- and MgTe-like longitudinal optical phonon modes was confirmed by Raman scattering.