Effect of annealing on the nanoscratch behavior of multilayer Si0.8Ge0.2/Si films

In this study, we examined the nanoscratch behavior of annealed multilayered silicon-germanium (SiGe) films comprising alternating sublayers (Si) deposited using an ultrahigh-vacuum chemical vapor deposition (UHV/CVD) system. Annealing consisted of ex situ thermal treatment in a furnace system. We used a nanoscratch technique to investigate the nanotribological behavior of the SiGe films and atomic force microscopy (AFM) to observe deformation phenomena. Our AFM morphological studies of the SiGe films revealed that pile-up phenomena occurred on both sides of each scratch. The scratched surfaces of the SiGe films that had been subjected to various annealing conditions exhibited significantly different features, it is conjectured that cracking dominates in the case of SiGe films while ploughing dominates during the scratching process. We obtained higher coefficients of friction (μ) when the ramped force was set at 6000 μN, rather than 2000 μN, suggesting that annealing of SiGe films leads to higher shear resistance; annealing treatment not only produced misfit dislocations in the form of a significantly wavy sliding surface but also promoted scratching resistance.     

Free-standing Si/SiGe micro- and nano-objects

Free-standing SiGe/Si microtubes, microneedles, helical coils, bridges and submicron vertical rings have been fabricated from elastically strained SiGe/Si heterostructures grown by ultra-high vacuum chemical vapor deposition. Three-dimensional micro- and nano-objects have been formed by self-scrolling after electron beam lithography, reactive ion etching and wet selective etching. Vertical rings with very smooth sidewalls may have applications in hot embossing lithography as well as in microelectronics and micromechanics. By adjusting the SiGe/Si bilayer thickness or Ge concentration, the diameter of tube or ring could be decreased into the nanometer scale.     

High-temperature pretreatment of Ni nanoparticles enhances the growth of high-density carbon fiber bundles during microwave plasma chemical vapor deposition

This paper presents an experimental study on the effect of the pretreatment procedure of Ni nanoparticles (NPs) on the growth of multiwalled carbon fiber (CNF) bundles by means of microwave plasma chemical vapor deposition (MPCVD). We used atomic force microscopy to investigate a series of pretreated Ni films. The structures and compositions of the CNFs on the via were investigated using scanning electron microscopy, high-resolution transmission electron microscopy, and Raman spectroscopy.The geometric shape of the Ni NPs was identified in terms of their roughness, which decreased upon increasing the pretreatment temperature, resulting subsequently in the synthesis of high-density CNFs. The diameter and shape of the Ni NPs were the dominant factors affecting the size and density of the CNFs bundles. We obtained CNFs that fully filled the via effectively; they might serve as potential interconnects in future nanodevices.     

Surface evolution and three-dimensional shape changes of SiGe/Si(0 0 1) islands during capping at various temperatures

The authors use a combination of atomic force microscopy and selective wet chemical etching of the Si capping layer to investigate both the surface and the three-dimensional SiGe/Si(0 0 1) island shape changes during capping at various temperatures. Different evolution paths are identified depending on the capping temperature. During the early stages of Si overgrowth at 450 °C, a moderate SiGe alloying occurs near the island apex. In the later stages, island burying begins through lateral growth of pyramid-like structures, which consist of pure Si. A comparison with previous overgrowth studies allows us to clarify the role of the initial island size in determining the surface evolution above buried islands. Island dissolution with material transfer to the wetting layer dominates upon capping at 580 °C. Finally, when the temperature during growth and capping is identical, the islands become flatter and wider indicating that the system starts to evolve towards an energetically preferred SiGe quantum well.     

Synthesis of high-quality monolayer graphene by low-power plasma

The growth of high-quality graphene on copper substrates has been intensively investigated using chemical vapor deposition (CVD). It, however, has been considered that the growth mechanism is different when graphene is synthesized using a plasma CVD. In this study, we demonstrate a dual role of hydrogen for the graphene growth on copper using an inductively coupled plasma (ICP) CVD. Hydrogen activates surface-bound carbon for the growth of high-quality monolayer graphene. In contrast, the role of an etchant is to manipulate the distribution of the graphene grains, which significantly depends on the plasma power. Atomic-resolution transmission electron microscopy study enables the mapping of graphene grains, which uncovers the distribution of grains and the number of graphene layers depending on the plasma power. In addition, the variation of electronic properties of the synthesized graphene relies on the plasma power.     

Raman散射和AFM对多晶硅薄结晶状况的研究

采用等离子体增强化学气相沉积(PECVD)法在普通玻璃衬底上制备了多晶硅(p-si)薄膜。利用拉曼(Raman)散射谱、原子力显微镜(AFM)研究了衬底温度、射频功率和SiH4浓度对薄膜晶化的影响,并对其结果进行分析讨论。研究结果表明,当衬底温度从200℃逐渐提高到400℃、SiH4浓度从5%降到1%,硅膜的晶化率逐渐提高,结构逐渐由非晶向多晶转变,射频功率对薄膜的晶化状况也有很大影响。     

Evolution of self-assembled Ge/Si island grown by ion beam sputtering deposition

The effect of temperature and Ge coverage on the evolution of self-assembled Ge/Si islands grown by ion beam sputtering deposition is studied. Atomic force microscopy and Raman spectroscopy are used to analyze the island morphology and the intermixing between Si and Ge. The experiments are presented in two aspects. First, when the temperature is increased, intermixing is promoted, resulting in the reappearance of low aspect ratio islands. Second, a different evolution pathway is observed, in which short islands initially don’t grow along the constant ratio of 11:1 (diameter:height) and the islands always grow faster in vertical direction. In summary, the interdiffusion, surface diffusion, and amount of Ge determines the evolution of Ge/Si islands.     

Effects of flow ratios on surface morphology and structure of hydrogenated amorphous carbon films prepared by microwave plasma chemical vapor deposition

A series of hydrogenated amorphous carbon (a-C:H) films were deposited on silicon substrates by microwave plasma chemical vapor deposition technique with a mixture of hydrogen and acetylene. The effects of flow ratio of hydrogen to acetylene on surface morphology and structure of a-C:H films were investigated using surface-enhanced Raman spectroscopy and scanning probe microscope (SPM) in the tapping AFM mode. Raman data imply a transition from graphite-like phase to diamond-like bonding configurations when the flow ratio increases. AFM measurements show that the increase in hydrogen content, to some extent, can smoothen the surface morphology and decrease the RMS roughness. Excessive hydrogen is found to cause the formation of polymeric hydrocarbon clusters in the films and reduce deposition rate.     

锗硅/硅异质结材料的化学气相淀积生长动力学模型

基于化学气相淀积(CVD)的Grove理论和Fick第一定律,提出并建立了锗硅(SiGe)/硅(Si)异质结材料减压化学气相淀积(RPCVD)生长动力学模型.与以前锗硅/硅异质结材料生长动力学模型仅考虑表面反应控制不同,本模型同时考虑了表面反应和气相传输两种控制机理,并给出了两种控制机理极限情况下的模型.本模型不仅适用于低温锗硅/硅应变异质结材料生长的表征,也适用于表征高温锗硅/硅弛豫异质结材料生长的表征.将模型计算值与实验结果进行了对比,无论是625℃低温下的应变SiGe的生长,还是900℃高温下的弛豫 关键词： SiGe/Si异质结材料 化学气相淀积生长动力学模型 Grove理论 Fick第一定律     

Well-aligned ZnO nanowires grown on Si substrate via metal–organic chemical vapor deposition

ZnO nanowires were grown on silicon substrate by metal–organic chemical vapor deposition (MOCVD) without catalysts. The scanning electron microscopy (SEM) observations along with X-ray diffraction (XRD) results suggest that the ZnO nanowires are single crystals vertically well-aligned to silicon substrate. Room-temperature photoluminescence (PL) measurement reveals strong UV emission and weak green emission, which demonstrates that the nanowires are of good optical properties. The mechanism of the catalyst-free growth of ZnO nanowires on silicon substrate is proposed.     

Characteristics of SiOx nanowires synthesized via the thermal heating of Cu-coated Si substrates

We have demonstrated the growth of SiO_x nanowires by the simple heating of the Cu-coated Si substrates. We have applied X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques to characterize the structure of the samples. The as-synthesized SiO_x nanowires had amorphous structures with diameters in the range of 20–80 nm. The thickness of the Cu layer affected the resultant sample morphology, favoring the nanowire formation at smaller thickness. Photoluminescence spectra of the nanowires exhibited blue emission. We have proposed the possible growth mechanism.     

Structural and morphological properties of thin ZnO films grown by pulsed laser deposition

The pulsed laser deposition technique was used to produce zinc oxide thin films onto silicon and Corning glass substrates. Homogeneous surfaces exhibiting quite small Root Mean Square (RMS) roughness, consisting of shaped grains were obtained, their grain diameters being 40-90 nm at room temperature and at 650 °C growth respectively. Films were polycrystalline, even for growth at room temperature, with preferential crystallite orientation the (0 0 2) basal plane of wurtzite ZnO. Temperature increase caused evolution from grain to grain agglomeration structures, improving crystallinity. Compressive to tensile stresses transition with temperature was found while the lattice constant decreased.     

淀积在不同小倾角蓝宝石衬底的n型GaN的研究

采用金属有机物化学淀积技术在不同倾角（0°—03°）的蓝宝石衬底上外延n型GaN.通过原子力显微镜观察到n型GaN均呈台阶流生长模式,02°和03°倾角衬底的n型GaN表面台阶朝向相同、分布均匀,明显地看到在0°倾角衬底的n型GaN表面由台阶重构直接导致的台阶朝向随机分布、疏密不匀的形貌.电子背散射分析表明,在0°倾角衬底的n型GaN外延层的应力随外延厚度增加而增加,而02°和03°倾角衬底的n型GaN外延层的应力没有明显的变化.电学和光学特性研究表明,02°和03°倾角衬底的n型GaN有较高的电子浓度和较低的黄光带与近带边强度之比. 关键词： 金属有机物化学淀积 氮化物 原子力显微镜 光致发光     

Structure and optoelectronic properties of Si/O superlattice

We have carried out structural study of the Si/O semiconductor atomic superlattices (SAS) with up to 18 Si/O layers fabricated by molecular beam epitaxy and in situ oxygen exposure on both Sb-doped and undoped Si buffer layers, and correlated the results with our photoluminescence, electroluminescence (EL) and I–V data. The Si/O SAS is a new type of superlattice, where monolayers of oxygen are sandwiched between the Si layers. High-resolution cross-sectional transmission electron microscopy (TEM) study has confirmed the presence of the superlattice and shown epitaxy in the Si/O superlattices. The high structural quality of the layers grown on the undoped Si buffer layers with low density of stacking faults—less than 10⁷/cm²—was established by TEM. Although structure perfection is very important allowing this new class of superlattices to be extended to other systems, it is important to point out that a 9-period SAS-based EL device with emission of light in green has been life-tested with stable output for over 1 year of continuous operation. The Si/O superlattice also serves as an epitaxially grown insulating layer as possible replacement of silicon-on-insulator. Together with the tailor-made effective band gap, this epitaxially grown superlattice may serve as future silicon-based three-dimensional integrated circuits.     

Nanomechanical characteristics of SnO2:F thin films deposited by chemical vapor deposition

The nanoindentation characterizations and mechanical properties of fluorine-doped tin oxide (SnO₂:F) films deposited on glass substrates, using chemical vapor deposition (CVD) method, were studied, which included the effects of the indentation loads, the loading time and the hold time on the thin film. The surface roughness, fractal dimension and frictional coefficient were also studied by varying the freon flow rates. X-ray diffraction (XRD), atomic force microscopy (AFM) and frictional force microscopy (FFM) were used to analyze the morphology of the microstructure. The results showed that crystalline structure of the film had a high intensity (1 1 0) peak orientation, especially at a low freon flow rate. According to the nanoindentation records, the Young's modulus ranged from 62.4 to 75.1 GPa and the hardness ranged from 5.1 to 9.9 GPa at a freon flow rate of 8000 sccm. The changes in measured properties were due to changing loading rate.     

Magnetic properties and characterization of CoCrM/TiCr/Si films produced by pulsed laser deposition

A series of nanogranular CoCrM/TiCr thin films have been fabricated by pulsed-laser deposition on Si(1 1 1) substrates at 450–500 °C. The crystal structure and magnetic properties of these films were investigated. The transmission electron microscope images with selected area diffraction and X-ray diffraction showed that the structure of as-prepared films is dependent on laser energy and deposition temperature. It was found that the microstructure of CoCrM/TiCr films consisted of fine dispersive crystal grains, while the preferential c-axis orientation of films deteriorated when the thickness of CoCr-alloy layer increased along with metal doping into the CoCr films. The magnetic properties of CoCrM/TiCr films formed on Si are strongly dependent on the thickness of magnetic layer, grain structure, and grain shape. Enhancement of coercivity and squareness of the laser-deposited film is probably due to the improvement in the magnetocrystalline anisotropy energy and the reduction in the thickness of magnetic layer.     

Investigations of C60 molecules deposited on Si(111) by noncontact atomic force microscopy

We demonstrated the high resolution imaging of the organic molecules using noncontact atomic force microscopy in ultrahigh vacuum. The sample was C₆₀ molecules deposited on the Si(111)-7×7 reconstructed surface. When the thickness of the C₆₀ film was submonolayer, we could image some isolated C₆₀ molecules and the reconstructed Si surface simultaneously. However, the imaging was highly unstable not only because of the large structure but also due to the large difference between the interaction forces on the molecules and on the Si surface. On the other hand, when the thickness of the C₆₀ molecules was almost monolayer, individual molecules could be stably imaged.     

Thickness and microstructure dependent transport and MR in La0.7Pb0.3MnO3 manganite films

Thickness dependent modifications in the structure and microstructure and their effect on the transport and magnetotransport in chemical solution deposition (CSD) grown La_0.7Pb_0.3MnO₃ (LPMO) manganite thin films grown on single crystalline LaAlO₃ (LAO) (1 0 0) substrates have been studied. X-ray diffraction (XRD) measurements show the reduction in the microstrain at the film-substrate interface with increasing thickness. Increase in grain size and island like grain growth with the reduction in surface roughness as a function of film thickness has been observed from the microstructural studies using atomic force microscopy (AFM) and lateral force microscopy (LFM) measurements. Improvement in the surface to volume ratio (D⁻¹) resulting in the modifications in transport and magnetotransport properties of the LPMO films has been discussed in detail in the light of thickness dependent microstructural effects on the resistivity and magnetoresistance (MR) behavior. The variations in intrinsic and extrinsic MR with D⁻¹ show an interesting interplay between them, which can be explained on the basis of thickness dependent grain size, grain boundary density and grain boundary nature.     

Morphological evolution of SiGe layers

Extensive research activity has been devoted to self-assembly of very small coherent islands. However, while island formation is commonly described by a widely used S-K growth scheme, more complex mechanisms based on competitive effects of kinetics and thermodynamics take place during the epitaxy of Si_1−xGe_x on Si(0 0 1). The aim of this paper is to explain the formation and the evolution of Si_1−xGe_x islands on Si(0 0 1). The paper presents a comprehensive investigation of the different growth modes of Si_1−xGe_x films (with x varying from 0 to 1) on Si(0 0 1) and Si(1 1 1). The results are presented in the form of kinetic morphological growth diagrams of as-grown samples. Two and four growth regimes are distinguished on (1 1 1) and (0 0 1) respectively. These growth regimes correspond to different levels of relaxation. In particular the four regimes observed on Si(0 0 1) correspond to (i) no relaxation in regime I (2D layer), (ii) 15-20% relaxation in regime II (“huts” islands with (1 0 5) facets), (iii) 20% and 50% relaxation in regime III (in “huts” and “domes” respectively) and (iv) 50% and 80% relaxation in regime IV (“domes” with bimodal size distribution). Every growth regime characteristic of as-grown sample is also associated with a specific equilibrium steady state morphology which is obtained after long-term annealing of the as-grown samples. In the two first regimes (no or small strain relaxation) the equilibrium morphology of highly strained Si_1−xGe_x deposits corresponds to (1 0 5) faceted islands. We show that these islands are stabilised by the compressive stress. As soon as strain is released, (1 0 5) facets disappear at the expense of the (1 1 3) and (1 1 1) facets and first-order transition occurs between “huts” and “domes” islands.     

Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures

Ion assisted molecular beam epitaxy bears the potential to tune morphological and structural parameters of semiconductor heterolayers for opto- and nanoelectronic applications. The morphology evolution and the degree of relaxation are influenced by the ion beam parameters and the strain of the heteroepitaxial film. In this work, the morphology of silicon germanium (SiGe) layers due to Si⁺-ion beam treatment during growth is investigated by atomic force microscopy (AFM) as a function of ion energy and ion flux density. Ion energies range from 100 eV to 1000 eV. The AFM measurements are used to determine the roughness distribution across the wafers. A regular pattern of SiGe crystallites is found, where the damage due to low ion energy Si⁺-ion bombardment is medium and the degree of relaxation, determined by Raman spectroscopy, is below 25%.