Detection of modulated molecular beams with electron bombardment detectors

By means of refinements in the modulated molecular beam technique the signal-to-noise ratio can be greatly improved, and differential cross-sections, for collision of molecuies of the same species, can be measured. This was accomplished by combining beam modulation and phase sensitive detection with very sharp turning on the front end of the lock-in-amplifier and long integration times on the output. In addition, the signal-to-noise ratio of the Ar-Ar system as a function of integration time was investigated using two different types of electron bombardment detectors an Aberth ion-source and a quadrupole mass filter. With an integration time of 40 min the estimated upper limit to the signal-to-noise ratio is 1500 to 1 for the Aberth ion-source. Using quadrupole mass filter with an integration time of 60 min the estimated upper limit to the signal-to-noise ratio is 5 × 10⁴ to 1. For chemical kinetics studies this ratio may be two orders of magnitude higher. Measurements were carried out at the Purdue University, Lafayette, Indiana, USA.     

Oxidation of AISI 304L stainless steel surface with atomic oxygen

Oxidation of stainless steel surface in oxygen atmosphere was investigated by Auger electron spectroscopy (AES) depth profiling. The samples made of AISI 304L stainless steel were exposed to highly non-equilibrium oxygen atmosphere at different temperatures between 300 and 800 K and for different periods between 5 and 600 s. The degree of dissociation of oxygen molecules was of the order of 10%. A thin oxide layer formed on the stainless steel surface consisted of the iron oxide. The thickness depended on the sample temperature. At room temperature it was 7 nm, and it remained the same up to 200 °C. With further increase of temperature, the thickness of the oxide layer increased and reached 40 nm at 450 °C. The thickness was independent of exposure time. The results were explained by two mechanisms of oxide growth. Up to 200 °C the oxidation was run by electro-migration, while at higher temperatures the thermal induced migration prevailed.     

Microstructure of multilayer interface in an Al matrix composite reinforced by TiNi fiber

A multilayer interface was formed in the Al matrix composite which was reinforced by 30% volume fraction of TiNi fiber. The composite was fabricated by pressure infiltration process and the interface between the TiNi fiber and Al matrix was investigated by transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). When the TiNi fiber was pre-oxidized in the air at 773 K for 1 h, three layers have been found and characterized in the interface: TiNi–B₂ layer near the TiNi fiber, Ti–Al compound layer with Ti and granular TiO₂ near the Al matrix, and Ti–Ni compound layer between TiNi–B₂ and Ti–Al compound layers. The effect of the multilayer interface on the mechanical properties of the composite was also discussed. The result showed that the uniaxial tensile strength of the composite at room temperature was 318 MPa, which was very close to the theoretical calculation value of 326 MPa. Moreover, the composite with good ductility exhibited a typical ductile-fracture pattern.     

Oxidation of Ni(Pt)Si by molecular vs. atomic oxygen

X-ray photoelectron spectroscopy (XPS) has been used to characterize the oxidation of a clean Ni(Pt)Si surface under two distinct conditions: exposure to a mixed flux of atomic and molecular oxygen (O + O₂; PO+O₂ = 5 × 10⁻⁶ Torr) and pure molecular oxygen (O₂; PO₂ = 10⁻⁵ Torr) at ambient temperatures. Formation of the clean, stoichiometric (nickel monosilicide) phase under vacuum conditions results in the formation of a surface layer enriched in PtSi. Oxidation of this surface in the presence of atomic oxygen initially results in formation of a silicon oxide overlayer. At higher exposures, kinetically limited oxidation of Pt results in Pt silicate formation. No passivation of oxygen uptake of the sample is observed for total O + O₂ exposure <8 × 10⁴ L, at which point the average oxide/silicate overlayer thickness is 23 (3) Å (uncertainty in the last digit in parentheses). In contrast, exposure of the clean Ni(Pt)Si surface to molecular oxygen only (maximum exposure: 5 × 10⁵ L) results in slow growth of a silicon oxide overlayer, without silicate formation, and eventual passivation at a total average oxide thickness of 8(1) Å, compared to a oxide average thickness of 17(2) Å (no silicate formation) for the as-received sample (i.e., exposed to ambient.) The aggressive silicon oxidation by atomic oxygen, results in Ni-rich silicide formation in the substrate and the kinetically limited oxidation of the Pt.     

Martensitic transformation and physical properties of ‘steel–TiNi’ bimetal composite,produced by explosion welding

The aim of this work is an investigation of structure and martensitic transformation in bimetal composite ‘TiNi–stainless steel’ produced by explosion welding. The results have shown that the mixture of chemical elements is observed in very narrow intervals of 6 µm close to the joint – 2 µm from the TiNi side and 4 µm from the steel one. Micro-hardness distribution in the vicinity of the joint is non-monotonic in the interval of 60 µm. Connection of stainless steel and TiNi plates by explosion welding leads to a dramatic change of martensitic transformation kinetics. Temperatures and the temperature interval of phase transformation increase strongly and heat transformation decreases. Annealing at 500°C for 2 h of bimetal composite decreases the interval of micro-hardness variation and partially recovers kinetics of phase transitions.     

18 MeV质子辐照对TiNi形状记忆合金R相变的影响

研究了用HZ B串列加速器的18MeV质子辐照对TiNi形状记忆合金R相变的影响,辐照在奥氏体母相状态下进行。示差扫描量热法(DSC)表明,辐照后R相变开始温度TsR和逆马氏体相变结束温度TfA随辐照注量的增加而降低。当注量为1.53×1014/cm2时,TsR和TfA分别下降6K和13K,辐照未引起R相变结束温度TfR和逆马氏体相变开始温度TsA的变化。表明辐照后母相(奥氏体相)稳定。透射电镜(TEM)分析表明辐照后没有引起合金可观察的微观组织变化。辐照对R相变开始温度TsR和逆马氏体相变结束温度Af的影响可能是由于质子辐照后产生了孤立的缺陷团,形成了局部应力场,引起晶格有序度的下降所造成的。     

Theoretical study of slowing supersonic CH3F molecular beams using electrostatic Stark decelerator

We have calculated the Stark effect of CH3F molecules in external electrical fields,the rotational population of supersonic CH3F molecules in different quantum states,and analyse the motion of weak-field-seeking CH3F molecules in a state |J = 1,KM = 1 inside the electrical field of a Stark decelerator by using a simple analytical model.Threedimensional Monte Carlo simulation is performed to simulate the dynamical slowing process of molecules through the decelerator,and the results are compared with those obtained from the analytical model,including the phase stability,slowing efficiency as well as the translational temperature of the slowed molecular packet.Our study shows that with a modest dipole moment(～1.85 Debye) and a relatively slight molecular weight(～34.03),CH3F molecules in a state |J = 1,KM = 1 are a good candidate for slowing with electrostatic field.With high voltages of ±10 kV applied on the decelerator,molecules of 370 m/s can be brought to a standstill within 200 slowing stages.     

Fluorescence-polarization detection of the scattering of molecular beams by a surface

We investigate analytically the effect of the forces that act both in the plane of a scattering surface and normally to it on the polarized fluorescence of reflected molecules in forward scattering. We show that as the velocity of the beam of incident molecules increases, the polarization degree of the fluorescence of reflected molecules becomes substantially different from that of free and/or desorbed molecules. Therefore, the detection of the scattering of molecular beams by a surface using the polarization degree of fluorescence can serve as a rather reliable means of diagnosing surfaces and determining the modes of scattering. Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 2, pp. 205–212, March–April, 1999.     

Direct reaction of adsorbed molecular oxygen with hydrazine on a clean Pt(111) surface

The oxidation of hydrazine on the clean Pt(111) surface has been investigated by temperature-programmed reaction spectroscopy (TPRS) in the temperature range 130–800 K. Direct reaction of molecular oxygen is observed on the Pt(111) surface for the first time, as indicated by the desorption of nitrogen beginning at 130 K with a maximum rate at 145 K, below the molecular oxygen dissociation temperature. Direct reaction of hydrazine with adsorbed molecular oxygen results in the formation of water and nitrogen. With excess hydrazine, all surface oxygen is reacted, forming water. When only adsorbed atomic oxygen is present, the low-temperature nitrogen yield decreases by a factor of 3 and the peak nitrogen desorption temperature increases to 170 K. No high-temperature (450–650 K) nitrogen desorption characteristic of nitrogen atom recombination is seen, indicating that during oxidation the nitrogen-nitrogen bond in hydrazine remains intact, as observed previously for hydrazine decomposition on the Pt(111) surface and hydrazine oxidation on rhodium. Two water desorption peaks are observed, characteristic of desorption-limited (175 K) and reaction-limited (200 K) water evolution from the Pt(111) surface. For low coverages of hydrazine, only the reaction-limited water desorption is observed, previously attributed to water formed from adsorbed hydroxyl groups. When excess hydrazine is adsorbed, the usual hydrazine decomposition products, H₂, N₂ and NH₃, are also observed. No nitrogen oxide species (NO, NO₂ and N₂O) were observed in these experiments, even when excess oxygen was available on the surface.     

Scattering of molecular beams from surfaces

Molecular beam scattering from surfaces offers a unique method for studying elementary gas-solid collisions. Recent technological advances have made it possible to study elastic and inelastic scattering from clean surfaces characterized by LEED and Auger spectroscopy. These experiments have provided information on surface structures, with and without adsorbed gases, on the gas-surface interaction potential, and on inelastic collisions involving phonon annihilation and creation. These recent measurements are reviewed and discussed in terms of the latest theoretical work.     

超高碰撞能23.84 kJ/mol下反应F+D2→DF+D的交叉分子束研究

本文搭建了一套新的实验设备,首次将氢原子里德堡态标记的飞行时间谱技术与激光爆破束源技术相结合,进行超高碰撞能下化学反应的动力学研究. 初步进行了F+D₂→DF+D在超高碰撞能23.84 kJ/mol下的实验研究. 在研究中应用了两种类型束源：一类是通过激光爆破过程产生的高能F原子束源,另一类是通过液氮冷却脉冲阀而产生的D₂束源. 实验中探测了反应产物振动态分辨的微分散射截面. 结果显示,大部分反应产物DF主要呈现侧向和后向散射分布,而产物DF(v''=4)则主要分布在前向. 对前向散射产物DF(v''=4)的动力学来源进行了讨论.     

Oxidation of Au nanoparticles on HOPG using atomic oxygen

Various Au nanostructures prepared on highly ordered pyrolytic graphite (HOPG) were oxidized using atomic oxygen under ultrahigh-vacuum conditions, and the oxygen species formed in the Au nanostructures were characterized using X-ray photoelectron spectroscopy (XPS). For an Au thin film, only a single oxygen species could be identified in the O 1s spectrum, which can be attributed to Au-oxide. For Au nanoparticles smaller than ∼10 nm, in contrast, two different oxygen species were detected, which are suggested to be Au-oxide and subsurface oxygen (or dissolved oxygen), respectively. CO titration experiments confirm the formation of different oxygen species depending on the particle size.     

Oxidation of silicon surface with atomic oxygen radical anions

The surface oxidation of silicon （Si） wafers by atomic oxygen radical anions （O- anions） and the preparation of metal-oxide-semiconductor （MOS） capacitors on the O-oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al2sO64]^4＋·4O^- （Cl2A7-O^- for short）. After it has been irradiated by an O- anion bean： （0.5 μA/cm^2） at 300℃ for 1-10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32 nm. X-ray photoelectron spectroscopy （XPS） results reveal that the oxide layer is of a mixture of SiO2, Si2 O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of 〈Al electrode/SiOx/Si〉 are investigated by measuring capacitance-voltage （C - V） and current-voltage （I - V） curves. The oxide charge density is about 6.0 × 10^1 cm^-2 derived from the （C - V curves. The leakage current density is in the order of 10^-6 A/cm^2 below 4 MV/cm, obtained from the I - V curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.     

多艾里光束合成自聚焦光束的实验实现

多光束合成和单光束聚焦一直是提高激光束功率和功率密度的两个重要方法. 结合艾里光束在自由空间中沿弯曲路径传播的特性, 从数值模拟和实验两个方面, 研究了利用多个一维艾里光束合成自由空间自聚焦光束的方法, 并对所得到的模拟和实验结果进行了对比. 采用分步束传播法, 分别模拟了由四个和八个一维艾里光束合成的自聚焦光束在自由空间中的传播过程, 给出了自聚焦光束在传播过程中横向和纵向的光强分布和变化趋势. 采用计算全息和空间光调制器技术实验, 实现了多个一维艾里光束合成的自聚焦光束. 实验中分别测量了四个和八个一维艾里光束合成的自聚焦光束的横向光强分布. 实验结果和理论结果符合得较好. 另外, 为了进一步增大自聚焦光束的功率, 可以增加参与合成的一维艾里光束的数量. 同时, 自聚焦光束的焦距可以通过调整各个一维艾里光束的相对位置进行调节.     

Oxidation and annealing of thin FeTi layers covered with Pd

The hydrogen storage material FeTi has the disadvantage to lose its sorption capacity in contact with impurities such as O₂ and H₂O. A possibility to overcome this problem is to coat it with an anti-corrosive layer which is permeable for hydrogen. In this study we prepared FeTi layers covered with a (4 or 20 nm) thin Pd layer. We used ion beam and sputter profiling techniques, X-ray photoelectron spectrometry and scanning probe techniques to investigate the response of these bi-layers upon annealing up to 300°C in vacuum, air and 10⁻⁵ mbar O₂. The layered structure remains intact up to 150°C. At 200°C in air and O₂, Fe and (some) Ti move towards the Pd surface where they form oxide regions. At higher temperatures thicker oxide regions, presumably along the Pd grains, are formed. These processes are more pronounced for the case of 4 nm Pd. A model is presented to explain the observed phenomena. We conclude that up to 150°C 4 nm of Pd is sufficient to act as a protective layer. For a temperature of 200°C, 20 nm Pd may still provide sufficient protection against oxidation.     

Effects of oxygen flow rate on the properties of HfO2 layers grown by metalorganic molecular beam epitaxy

The investigations on the properties of HfO₂ dielectric layers grown by metalorganic molecular beam epitaxy were performed. Hafnium-tetra-tert-butoxide, Hf(C₄H₉O)₄ was used as a Hf precursor and pure oxygen was introduced to form an oxide layer. The grown film was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), and capacitance–voltage (C–V) and current–voltage (I–V) analyses. As an experimental variable, the O₂ flow rate was changed from 2 to 8 sccm while the other experimental conditions were fixed. The XPS spectra of Hf 4f and O 1s shifted to the higher binding energy due to the charge transfer effect and the density of trapped charges in the interfacial layer was increased as the oxygen flow rate increased. The observed microstructure indicated the HfO₂ layer was polycrystalline, and the monoclinic phases are the dominant crystal structure. From the C–V analyses, k = 14–16 and EOT = 44–52 were obtained, and the current densities of (3.2–3.3) × 10⁻³ A/cm² were measured at −1.5 V gate voltage from the I–V analyses.     

Electro-mechanical response of functionally graded beams with imperfectly integrated surface piezoelectric layers

The time-dependent behavior of a simply-supported functionally graded beam bonded with piezoelectric sensors and actuators is studied using the state-space method. The creep behavior of bonding adhesives between piezoelectric layers and beam is characterized by a Kelvin-Voigt viscoelastic model, which is practical in a high temperature circumstance. Both the host elastic functionally graded beam and the piezoelectric layers are orthotropic and in a state of plane stress, with the former being inhomogeneous along the thickness direction. A laminate model is employed to approximate the host beam. Moreover, the coupling effect between the elastic deformation and electric field in piezoelectric layers is considered. Results indicate that the viscoelastic property of interfacial adhesives has a significant effect on the function of bonded actuators and sensors with time elapsing.     

60keV质子辐照对TiNi记忆合金薄膜马氏体相变的影响

 利用磁控溅射的方法在氧化后的单晶Si基片上制备了TiNi形状记忆合金薄膜，利用示差扫描量热法和原位X射线衍射研究了薄膜的马氏体相变特征。通过60keV质子注入（辐照）薄膜样品研究了H+离子对合金薄膜马氏体相变特征的影响，结果表明氢离子注入后引起了马氏体相变开始Ms和结束点Mf以及逆马氏体相变开始As和结束温度Af的下降，而对R相变开始Rs和结束温度Rf影响不大。掠入射X射线衍射表明H+离子注入后有氢化物形成。H⁺离子注入形成的氢化物是引起相变点的变化的主要因素。     

XPS and ab initio study of the interaction of PbTe with molecular oxygen

Density functional (B3LYP) calculations have been performed to investigate the adsorption of molecule on the surface of cluster (PbTe)₄. To study the influence of point defects (namely, impurity atoms and cation and anion vacancies) on the reactivity of PbTe surface, clusters (PbTe)₃GeTe, (PbTe)₃GaTe, (PbTe)₃Te, and (PbTe)₃(Pb) were investigated. The adsorption of oxygen on the surface of (PbS)₄ cluster was calculated to evaluate the role of anions in the adsorption process. It was shown that the formation of the peroxide-like complex is the first step of adsorption. The calculated tendency to surface oxidation increases in sequence: PbTe with cation vacancies <PbS < pure PbTe < PbTe doped with Ga < PbTe doped with Ge < PbTe with anion vacancies. The results of quantum-chemical calculations correlate with X-ray photoelectron spectroscopy data.