Hydroxyethyl cellulose-assisted hydrothermal synthesis of Bi2S3 urchin-like colonies

Orthorhombic Bi₂S₃ with different morphologies was successfully synthesized by the acid-catalyst hydrothermal reactions of bismuth nitrate (Bi(NO₃)₃) and thiourea (NH₂CSNH₂) solutions containing different amounts of hydroxyethyl cellulose (HEC). Phase, morphologies, and optical properties were characterized by X-ray diffraction, selected area electron diffraction, scanning and transmission electron microscopy, and ultraviolet-visible spectroscopy. The products, hydrothermally synthesized in the HEC-free, 0.25 g HEC-added, 0.5 g HEC-added and 1.00 g HEC-added solutions, were respectively proved to be orthorhombic Bi₂S₃ irregular nanorods, complete urchin-like colonies of regular nanorods, incomplete urchin-like colonies of regular nanorods, and highly crystalline regular nanorods growing along the [001] direction. Tauc band gaps of the orthorhombic Bi₂S₃ nanorods, synthesized in the HEC-free, 0.25 g HEC-added, and 1.00 g HEC-added solutions were determined to be 3.0, 1.75 and 1.8 eV, respectively. Formation mechanism of orthorhombic Bi₂S₃ nanorods, synthesized in the HEC-free and HEC-added solutions, was also discussed at great detail.     

Chemical bath deposition of Bi2S3 films by a novel deposition system

Bismuth sulfide (Bi₂S₃) films were chemically deposited by a novel deposition system in which ammonium citrate was used as the chelating reagent. Two sulfur source thioacetamide (TA) and sodium thiosulfate (Na₂S₂O₃) were used to prepare Bi₂S₃ films. Both the as-prepared films have amorphous structure. However, annealing can improve the crystallization of the films. The composition of the films prepared by TA and Na₂S₂O₃ are all deviate from the stoichiometric ratio of Bi₂S₃. The Bi₂S₃ films are all homogeneous and well adhered to the substrate. The optical properties of the Bi₂S₃ films are studied. The electrical resistivity of the as-prepared films are all around 7 × 10³ Ω cm in dark, which decreases to around 1 × 10³ Ω cm under 100 mW/cm² tungsten-halogen illumination. After the annealing, the dark resistivity of the Bi₂S₃ film prepared by TA decreases by four magnitudes. In contrast, the dark resistivity of the Bi₂S₃ film prepared by Na₂S₂O₃ only decreases slightly.     

Preparation of Bi2S3 thin films with a nanoleaf structure by electrodeposition method

Nanoleaf-like Bi₂S₃ thin films were deposited on indium tin oxide (ITO) glass using Bi(NO₃)₃ and Na₂S₂O₃ as precursors by a cathodic electrodeposition process. The as-deposited thin films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and photoluminescence spectrum (PL). The influence of precursor solution mole concentration ratios [Bi(NO₃)₃]/[Na₂S₂O₃] on the phase compositions, morphologies and photoluminescence properties of the obtained thin films were investigated. Results show that a uniform Bi₂S₃ thin film with nanoleaf structure can be obtained with the precursor solution concentration ratio [Bi(NO₃)₃]/[Na₂S₂O₃] = 1:7. The as-prepared thin films exhibit blue-green photoluminescence properties under ultraviolet light excitation. With the increase of concentration ratios [Bi(NO₃)₃]/[Na₂S₂O₃] in the deposition solution, the crystallizations and PL properties of Bi₂S₃ thin films are obviously improved.     

低维Bi2Fe4O9晶体的控制生长及其光催化性能研究

Low-dimensional Bi₂Fe₄O₉ nanosheets and microrods have been selectively prepared by a solvothermal method, from which the growth of the Bi₂Fe₄O₉ crystals can be controlled by the variation of reaction conditions. Structure determination showed that the nanosheets are mainly exposed by {001} facets while the microrods are exposed by {110} facets. Ab- sorption spectra revealed that there are two bandgaps observed for both nanosheets (at 1.9 and 1.55 eV) and microrods (1.7 and 1.45 eV), and they both would be available for the sunlight photocatalysis e ciently due to the intensive absorption ability in a wide region. Photocatalytic investigation demonstrated that the overall photocatalytic performance of the microrods is prior to that of the nanosheets due to the variation of bandgaps and exposed facets. The present report provides a useful alternative strategy for the controlling growth of nanostructures and/or microcrystals besides the present demonstration of the Bi₂Fe₄O₉ crystals with diflerent bandgaps and facets that would be able to tune the corresponding photocatalytic ability selectively.     

SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究

采用溶胶凝胶工艺在p-Si衬底上制备了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合铁电薄膜. 研究了SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi₄Ti< 关键词： 2Ta₂O₉')" href="#">SrBi₂Ta₂O₉ 4Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 复合铁电薄膜 溶胶凝胶工艺     

Low temperature fired Ni-Cu-Zn ferrite with Bi4Ti3O12

The Ni-Cu-Zn ferrites with different contents of Bi₄Ti₃O₁₂ ceramics (1-8 wt%) as sintering additives were prepared by the usual ceramic technology and sintered at 900 °C to adapt to the low temperature co-fired ceramic (LTCC) technology. The magnetic and dielectric properties of the ferrite can be effectively improved with the effect of an appropriate amount of Bi₄Ti₃O₁₂. For all samples, the ferrite sintered with 2 wt% Bi₄Ti₃O₁₂ has relatively high density (98.8%) and permeability, while the ferrite with 8 wt% Bi₄Ti₃O₁₂ has relatively good dielectric properties in a wide frequency range. The influences of Bi₄Ti₃O₁₂ addition on microstructure, magnetic and dielectric properties of the ferrite have been discussed.     

Characterization of electrodeposited Bi2S3 thin films by holographic interferometry

Optical non destructive evaluation methods, using lasers as the object illumination source, include holographic interferometry. It is widely used to measure stress, strain, and vibration in engineering structures. Double exposure holographic interferometry (DEHI) technique is used to determine thickness and stress of electrodeposited bismuth trisulphide (Bi₂S₃) thin films for various deposition times. The same is tested for other concentration of the precursors. It is observed that, increase in deposition time, increases thickness of thin film but decreases stress to the substrate. The structural, optical and surface wettability properties of the as deposited films have been studied using X-ray diffraction (XRD), optical absorption and contact angle measurement, respectively. The X-ray diffraction study reveals that the films are polycrystalline with orthorhombic crystal structure. Optical absorption study shows the presence of direct transition with band bap 1.78 eV. The water contact angle measurement shows hydrophobic nature of Bi₂S₃ thin film surface.     

Enhanced luminescence of Dy in Y3Al5O12 by Bi co-doping

In the present paper, phosphors with the composition Y_3−x−yAl₅O₁₂:Bi³⁺_x, Dy³⁺_y were synthesized with solid state reactions. The luminescence properties of Bi³⁺ and Dy³⁺ in Y₃Al₅O₁₂(YAG) and the energy transfer from Bi³⁺ to Dy³⁺ were investigated in detail. Bi³⁺ in YAG emits one broad band peaking at 304 nm which can be ascribed to the transition from excited states ³P_{0, 1} to ground state ¹S₀. Dy³⁺ in YAG emits two groups of peaks around 484 and 583 nm, respectively, which can be ascribed to the transitions from excited state ⁴F_9/2 to ground states ⁶H_15/2 and ⁶H_13/2. The co-doping of Bi³⁺ enhances the luminescent intensity of Dy³⁺ by ∼7 times because Bi³⁺ can transfer the absorbed energy to Dy³⁺ efficiently. The mechanism of energy transfer was also discussed.     

Effect of microstructure on thermoelectric properties of CSD-grown Bi2Sr2Co2Oy thin films

Three Bi₂Sr₂Co₂O_y thin films with different microstructures have been prepared by chemical solution deposition on LaAlO₃(001) through varying the annealing temperature. With the decrease in the annealing temperature, both the size and c-axis alignment degree of grains in the film decrease as well, leading to an increase in the film resistivity. In addition, the decrease in the annealing temperature also results in a slight increase in the seebeck coefficient due to the enhanced energy filtering effect of small-grain film. The nanostructured Bi₂Sr₂Co₂O_y film with the average grain size of about 100 nm shows a power factor comparable to that of the films with larger grains. Since the thermal conductivity of the nanostrcutured films can be depressed due to the enhanced phonon scattering by grain boundary, a higher figure of merit is expected in Bi₂Sr₂Co₂O_y thin film with grains in nanometer size.     

Fabrication of flower-shaped Bi2O3 superstructure by a facile template-free process

A novel flower-shaped Bi₂O₃ superstructure has been successfully synthesized by calcination of the precursor, which was prepared via a citric acid assisted hydrothermal process. The precursor and Bi₂O₃ were characterized with respect to morphology, crystal structure and elemental chemical state by field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). It was shown that both the precursor and Bi₂O₃ flower-shaped superstructure were constructed of numerous nanosheets while the nanosheets consisted of a great deal of nanoparticles. Furthermore, key factors for the formation of the superstructures have been proposed; a mechanism for the growth of the superstructure has been presented based on the FESEM investigation of different growth stages.     

Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管制备及存储特性

在溶胶-凝胶工艺获得高质量Bi₄Ti₃O₁₂薄膜的基础上 ，制备了Ag/Bi₄Ti₃O₁₂栅n沟道铁电场效应晶体管. 研 究了Si基Bi₄Ti₃O₁₂薄膜的生长特性及其对铁电薄膜/ 硅的界面状态和铁电场效应晶体管存储特性的影响. 研究表明，在合理的工艺条件下可以获 得具有较高c-轴择优取向的纯钙钛矿相Si基Bi₄Ti₃O₁₂ 铁电薄膜并有利于改善Bi₄Ti₃O₁₂/Si之间的界面特性; 顺时针回滞的C-V特性曲线和C-T曲线表明Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有极化存储效应和一定的极化电荷保持能力; 器件的转移(I< sub>sd}-V_G)特性曲线显示Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有明显的栅极化调制效应. 关键词： 铁电场效应晶体管 4}Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 存储 特性 溶胶-凝胶工艺     

Si基Bi3.25La0.75Ti3O12铁电薄膜的制备与特性研究

采用Sol-Gel工艺低温制备了Si基Bi_3.25La_0.75Ti₃O₁₂铁电薄膜.研究了退火温度对薄膜微观结构、介电特性与铁电性能的影响.500℃退火处理的Bi_3.25La_0.75Ti₃O₁₂薄膜未能充分晶化，晶粒细小且有非晶团聚，介电与铁电性能均较差.高于550℃退火处理的Bi_3.25La_{0.75 关键词： 铁电薄膜 3.25}La_0.75Ti₃O₁₂')" href="#">Bi_3.25La_0.75Ti₃O₁₂ Sol-Gel工艺     

Synthesis and ion conductivity of (Bi2O3)0.75(Dy2O3)0.25 ceramics with grain sizes from the nano to the micro scale

Using (Bi₂O₃)_0.75(Dy₂O₃)_0.25 nano-powder synthesized by reverse titration co-precipitation method as raw material, dense ceramics were sintered by both Spark Plasma Sintering (SPS) and pressureless sintering. According to the predominance area diagram of Bi-O binary system, the sintering conditions under SPS were optimized. (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with relative density higher than 95% and an average grain size of 20 nm were sintered in only 10 min up to 500 °C. During the pressureless sintering process, the grain growth behavior of (Bi₂O₃)_0.75(Dy₂O₃)_0.25 followed a parabolic trend, expressed as D² − D₀² = Kt, and the apparent activation energy of grain growth was found to be 284 kJ mol^− 1. Dense (Bi₂O₃)_0.75(Dy₂O₃)_0.25 ceramics with different grain sizes were obtained, and the effect of grain size on ion conductivity was investigated by impedance spectroscopy. It was shown that the total ion conductivity was not affected by the grain size down to 100 nm, however lower conductivity was measured for the sample with the smallest grain size (20 nm). But, although only the δ phase was evidenced by X-ray diffraction for this sample, a closer inspection by Raman spectroscopy revealed traces of α-Bi₂O₃.     

La掺杂对Bi4Ti3O12薄膜铁电性能的影响

利用Sol-Gel法在Pt/Ti/SiO₂/Si衬底上制备出Bi₄Ti₃O₁₂和Bi_3.25La_0.75Ti₃O₁₂薄膜，研究了La掺杂对Bi₄Ti₃O₁₂薄膜的晶体结构、铁电性能和疲劳特性的影响，发现La掺杂没有改变Bi₄Ti₃O₁₂薄膜的基本晶体结构，并且提高了Bi₄Ti₃O₁₂铁电薄膜的剩余极化值和抗疲劳性能，对La掺杂改善Bi₄Ti₃O₁₂铁电薄膜性能的机理进行了讨论. 关键词： 铁电性能 4Ti₃O₁₂薄膜')" href="#">Bi₄Ti₃O₁₂薄膜 3.25La_0.75Ti₃O₁₂薄膜')" href="#">Bi_3.25La_0.75Ti₃O₁₂薄膜 sol-gel法 La掺杂     

High temperature thermoelectric properties of highly c-axis oriented Bi2Sr2Co2Oy thin films fabricated by pulsed laser deposition

High-temperature thermoelectric transport property measurements have been performed on the highly c-axis oriented Bi2Sr2Co20v thin films prepared by pulsed laser deposition on LaA1Oa （001）. Both the electric resistivity p and the seebeck coefficient S of the film exhibit an increasing trend with the temperature from 300 K-1000 K and reach up to 4.8 m. cm and 202 V/K at 980 K, resulting in a power factor of 0.85 mW/mK which are comparable to those of the single crystalline samples. A small polaron hopping conduction can be responsible for the conduction mechanism of the film at high temperature. The results demonstrate that the Bi2Sr2Co2Oy thin film has potential application has high temperature thin film thermoelectric devices,     

Si基Bi4Ti3O12铁电薄膜的制备与特性研究

采用sol-gel工艺, 在分层快速退火的工艺条件下成功地制备了高质量Si基Bi_{4Ti3O12铁电薄膜. 研究了Si基Bi4Ti3O12薄膜的生长行为、铁电性能、C-V特性和疲劳特性. 研究表明: Si基Bi4Ti3O12薄膜具有随退火温度升高沿c轴择优生长的趋势; 退火温度通过影响薄膜的晶粒尺寸、生长取向和薄膜中载流子的浓度来改变Si基Bi关键词： sol-gel法 铁电薄膜 4Ti3O12')" href="#">Bi4Ti3O12 C-V特性}     

Synthesis and photoluminescence properties of Bi2S3 nanowires via surfactant micelle-template inducing reaction

Single-crystalline Bi₂S₃ nanowires, with diameters in the range of 80-200 nm and lengths up to tens of micrometers, have been successfully synthesized through surfactant micelle-template inducing reaction at ambient-pressure and low-temperature. The synthetic route is simple, effective and can provide great opportunities for both fundamental and technological applications. The optical properties of the Bi₂S₃ nanowires with different diameters were firstly examined by means of photoluminescence spectroscopy at room temperature. The representative photoluminescence spectrum exhibits a great blue-shift from the band gap of 1.30 eV of bulk Bi₂S₃ to high energy of 1.44 eV, which indicated that these nanostructures showed quantum confinement effects.     

Enhanced photoluminescence of Sm/Bi co-doped Gd2O3 phosphors by combustion synthesis

Gd₂O₃:Sm³⁺ and Gd₂O₃:Sm³⁺,Bi³⁺ powders were prepared by a combustion method. Their structures were determined using X-ray diffraction. UV-visible absorption and photoluminescence spectra were investigated for Gd₂O₃:Sm³⁺ and Gd₂O₃:Sm³⁺,Bi³⁺ at different annealing temperatures and different doping concentrations. The emission spectra of all samples presented the characteristic emission narrow lines arising from the ⁴G_5/2→⁶H_J transitions (J=5/2, 7/2, and 9/2) of Sm³⁺ ions upon excitation with UV irradiation. The emission intensity of Sm³⁺ ions was largely enhanced with introducing Bi³⁺ ions into Gd₂O₃:Sm³⁺ and the maximum occurred at a Bi³⁺ concentration of 0.5 mol%. The relevant mechanisms were discussed with the sensitization theory by Dexter and the aggregation behavior of Bi³⁺ ions.     

Effects of surface-modification with Bi2O3 on the thermal stability and photoinduced charge property of nanocrystalline anatase TiO2 and its enhanced photocatalytic activity

Bi₂O₃ surface-modified TiO₂ nanoparticle has been synthesized by sol-hydrothermal processes, followed by post-treatment with an appropriate amount of bismuth nitrate solution, and also characterized by XRD, Raman, BET, TEM, FT-IR, XPS, UV-vis DRS and SPS techniques. The effects of the surface-modification with Bi₂O₃ on the thermal stability, photoinduced charge separation and photocatalytic activity for degrading rhodamine B (or phenol) under ultraviolet (or visible) irradiation are investigated in detail, along with their relationships and the activity enhancement mechanisms are also suggested. The results show that the modification with Bi₂O₃ can improve the thermal stability of the as-prepared anatase crystallites, consequently enhancing the anatase crystallinity so as to promote the photoinduced charge separation. And the modification with Bi₂O₃ also extends the optical response range. It can be concluded that the activity enhancement of surface-modified TiO₂ is mainly attributed to the increase in the photoinduced charge separation rate and to the extent of the optical response range, compared with un-modified ones. Moreover, the inhibition phase transformation mechanism related to Bi₂O₃ is suggested.     

退火气压对Bi3.25La0.75Ti3O12铁电薄膜的微观结构和铁电性能的影响

采用sol-gel法在Pt/TiO₂/SiO₂/p-Si(100)衬底上制备了Bi_3.25La_0.75Ti₃O₁₂(BLT)铁电薄膜,研究了在750 ℃时不同退火气压(p_{O2:10^-4—3 atm)对薄膜微观结构和电学性能的影响.XRD和拉曼光谱结果表明在10^-4和3 atm氧气压下退火 关键词： 3.25}La_0.75Ti₃O₁₂')" href="#">Bi_3.25La_0.75Ti₃O₁₂ 铁电性能 sol-gel法 正交化度