Thermal stability of Ag films in air prepared by thermal evaporation

The thermal stability of silver films in air has been studied. Pure Ag films, 250 nm in thickness, were prepared on glass substrates by thermal evaporation process, and subsequently annealed in air for 1 h at temperatures between 200 and 400 °C. The structure and morphology of the samples were investigated by X-ray diffraction, Raman spectra and atomic force microscopy. It is found that the crystallization enhances for the annealed films, and film surface becomes oxidized when annealing temperature is higher than 350 °C. The electrical and optical properties of the films were studied by van der Pauw method and spectrophotometer, respectively. Reflectance drops sharply as Ag films are annealed at temperatures above 250 °C. Film annealed at 250 °C has the maximum surface roughness and the minimum reflectance at 600 nm optical wavelength. Film annealed at 200 °C has the minimum resistivity, and resistivity increases with the increasing of the annealing temperature when temperature is above 200 °C. The results show that both oxidization on film surface and agglomeration of silver film result in infinite of electrical resistivity as the annealing temperature is above 350 °C.     

Dielectric, thermal and optical study of an unusually shaped liquid crystal

Dielectric measurements have been carried out for the determination of real and imaginary parts of the permittivity of a newly synthesized, unusually shaped liquid crystal. The sample has been investigated in the frequency range from 100 Hz to 10 MHz within a temperature range 80-130 °C. The dielectric measurements in the smectic A phase indicate a Cole-Cole type of dispersion, and the activation energy was found to be 5.5 meV by using the Arrhenius plot of relaxation time. In addition to this, thermal and optical transmittance studies have also been conducted in the above mentioned temperature range, and the temperature dependence of these parameters has been discussed in detail. The phase transition temperature obtained from a differential scanning calorimetry (DSC) study matches within 2 °C that was obtained from an optical transmittance study. The dielectric and optical behavior of the unusually shaped liquid crystal has been explained on the basis of a proposed theoretical model in which a sample possesses two different conformers having induced polarizations in opposite directions.     

Structural, optical and dielectric studies of glycinium trifluoroacetate single crystal

An organic material glycinium trifluoroacetate (GTFA) has been re-synthesized and large single crystals have been grown by solution technique. Complete structure of GTFA has been redetermined from single crystal XRD data. FTIR confirmed the presence of various functional groups. Melting point (152.44 °C), thermal stability and specific heat were studied from TG/ DTA and DSC. In UV absorption spectra, a lower cutoff value as 220 nm and a wide band gap as 4.86 eV for GTFA were observed. The dielectric studies, dielectric constant and loss were measured at different temperatures (30-90 °C) in the frequency range 100 Hz-2 MHz.     

High-power 3.8 μm tunable optical parametric oscillator based on PPMgO:CLN

The experimental results of a high-power 3.8 μm tunable laser are presented on a quasi-phase-matched single-resonated optical parametric oscillator in PPMgO:CLN pumped by a 1064 nm laser of an elliptical beam. Theoretical analyses of the PPMgO:CLN wavelength tuning are presented. The pump source was an acousto-optical Q-switched cw-diode-side-pumped Nd:YAG laser. The beam polarization matched the e-ee interaction in PPMgO:CLN. When the crystal was operated at 90 °C and the pump power was 150 W with a repetition rate of 10 kHz, average output power of 22.6 W at 3.86 μm and 63 W at 1.47 μm was obtained. The slope efficiency of the 3.86 μm laser with respect to the pump laser was 17.8%. The M² factors of the 3.86 μm laser were 1.74 and 4.86 in the parallel and perpendicular directions, respectively. The mid-IR wavelength tunability of 3.7-3.9 μm can be achieved by adjusting the temperature of a 29.2 μm period PPMgO:CLN crystal from 200 °C to 30 °C, which basically is accorded with the theoretic calculation.     

Low-temperature oxidation of SiC surfaces by supercritical water oxidation

The oxidation process on silicon carbide (SiC) surfaces is important for wide bandgap power semiconductor devices. We investigated SiC oxidation using supercritical water (SCW) at high pressure and temperature and found that a SiC surface can be easily oxidized at low temperature. The oxidation rate is 10 nm/min at 400 °C and 25 MPa, equal to that of conventional thermal dry oxidation at 1200 °C. Low-temperature oxidation should contribute to improved performance in future SiC devices. Moreover, we found that SCW oxidation at 400 °C forms a much smoother SiO₂/SiC interface than that obtained by conventional thermal dry oxidation. A higher oxidation rate and smaller microroughness are achieved at a lower oxidation temperature owing to the high density of oxidizers under SCW conditions.     

Influence of the hydrothermal temperature and pH on the crystallinity of a sputtered hydroxyapatite film

Hydroxyapatite (HA) was coated onto titanium substrates using radio frequency sputtering, and the sputtered films were crystallized under hydrothermal conditions at 110-170 °C at pH values of 7.0 and 9.5. The crystallite size, the remnant film thickness, and the surface morphology of the films were observed using X-ray diffraction, energy dispersive X-ray spectroscopy, and scanning electron microscopy, respectively.The crystallite size increased with the process temperature, and reached 123.6 nm (pH 9.5 and 170 °C) after 24 h. All of the crystallite sizes of the film treated at pH 9.5 were higher than those treated at pH 7.0 at each process temperature. The film treated at pH 9.5 retained more than 90% of the initial film thickness at any process temperature. The ratio of the film treated at pH 7.0 did not reached 90% at less than 150 °C, and tended to increase with the process temperature.     

Monolayer deposition of L10 FePt nanoparticles via electrospray route

The deposition monolayers of L1₀ FePt nanoparticles via an electrospraying method and the magnetic properties of the deposited film were studied. FePt nanoparticles in a size of around 2.5 nm in diameter, prepared by a liquid process, were used as a precursor. The size of the deposited particles can be controlled up to 35 nm by controlling the sprayed droplet size that is formed by adjusting the precursor concentration and the precursor flow rate. The droplets were heated in a tubular furnace at a temperature of up to 900 °C to remove all organic compounds and to transform the FePt particles from disordered face centered cubic to an ordered FCT phase. Finally, the particles were deposited in the form of a monolayer film on a silicon substrate by electrostatic force and characterized by scanning electron microscopy. The monolayer of particles was obtained by the high charge on particles obtained during the electrospraying process. The magnetic properties of the monolayer were investigated by magneto-optic Kerr effect measurements. Coercivity up to 650 Oe for a film consisting of 35 nm L1₀ FePt nanoparticles was observed after heat treatment at a temperature of 800 °C.     

The influence of optical bleaching on lifetimes and luminescence intensity in the slow component of optically stimulated luminescence of natural quartz from Nigeria

The intensity of optically stimulated luminescence may be decreased to a slow or medium component of its decay curve by optical bleaching, that is, by prolonged exposure of the luminescent sample to stimulating light. In this paper, we report on the influence of irradiation and measurement temperature on luminescence lifetimes as well as on the effect of measurement temperature on luminescence intensity in annealed natural quartz from Nigeria. Measurements were carried out in the slow component region using time-resolved optical stimulation at 470 nm on samples annealed at 500 and 600 °C. Luminescence lifetimes were determined from the resultant time-resolved luminescence spectra by analysing the portion of each spectrum after the stimulating light pulse of duration 11 μs. In preparatory tests, the influence of the duration of optical bleaching on lifetimes was investigated. It was found that lifetimes in samples annealed at 500 °C are independent of the duration of optical bleaching, whereas lifetimes in quartz annealed at 600 °C are affected, decreasing towards a constant value with duration of bleaching. Concerning measurements in the slow-component region, lifetimes were found to decrease with irradiation dose for samples annealed at either 500 or 600 °C. The temperature dependence of lifetimes in both sets of quartz is similar with lifetimes constant at about 36 μs between 20 and 120 °C, but decreasing consistently from then on to about 5 μs at 200 °C, the maximum measurement temperature used in experiments. The luminescence intensity was observed to typically go through a peak as the stimulation temperature was increased from 20 to 200 °C, following a brief initial decrease, a change better exemplified in the quartz annealed at 600 °C. The initial decrease in luminescence intensity is attributed to the dominance of optical stimulation over thermal stimulation. On the other hand, the subsequent change of luminescence intensity with temperature is discussed as evidence of thermal assistance to optical stimulation, initially with activation energy of 0.27±0.07 eV and of thermal quenching subsequently with activation energy equal to 0.93±0.23 eV for samples annealed at either 500 or 600 °C. The temperature dependence of lifetimes is explained as showing increased thermal effect on lifetimes with activation energy values within 0.83±0.01 eV. On the other hand, the influence of irradiation on lifetimes is accounted for in terms of an energy band model for quartz consisting of three luminescence centres and one non-radiative recombination centre.     

An interface study of crystalline Fe/Ge multilayers grown by molecular beam epitaxy

Fe/Ge multilayers were grown on single crystal Ge(0 0 1) substrates by molecular beam epitaxy. The structural, electronic and magnetic properties of Fe/Ge have been studied. The analysis shows that Fe grows in a layer-by-layer epitaxial growth mode on Ge(0 0 1) substrates at 150 °C and no intermixing has been observed. Growth of a crystalline Ge film at 150 °C on a single crystal Fe film has been observed. At this temperature Ge films grow by means of the island growth mode according to reflection of high energy electron diffraction patterns. Fe layers of 36 nm thickness, deposited at 150 °C on Ge(0 0 1) substrates, show two magnetization reversal values indicating the growth of Fe in two different crystal orientations. 36 nm thick Fe and Ge layers grown at 150 °C in Ge/Fe/Ge/Fe/Ge(0 0 1) sequence shows ferromagnetic behavior, however, the same structure grown at 200 °C shows paramagnetic behavior.     

Observation of oxygen contamination at ZnSe/GaAs interfaces using SIMS

ZnSe epilayers were grown on GaAs (1 0 0) substrates using MBE. The native contamination (oxide and carbon) was removed in situ from the substrate surfaces by conventional thermal cleaning and by exposure to atomic hydrogen. A maximum substrate temperature of 600 °C was required for the thermal cleaning process, while a substrate temperature of 450 °C was sufficient to clean the substrate using hydrogen. ZnSe epilayers were also grown on As capped GaAs epilayers, which were decapped at a maximum temperature of 350 °C. SIMS profiles showed the existence of oxygen at the interface for all of the substrate preparation methods. The oxygen surface coverage at the interface was found to be 0.03% for the atomic hydrogen cleaned substrate and 0.7% for the thermally cleaned substrate.     

Effect of annealing temperature on the microstructures and photocatalytic property of colloidal ZnO nanoparticles

Colloidal ZnO nanoparticles were prepared in ethanol solutions and annealed at different temperatures (150-500 °C) subsequently. The size, morphology and surface characteristics of ZnO nanoparticles were examined by TEM, XRD, UV-vis absorption spectrum and FTIR technique. With the increase of annealing temperature, the mean size of ZnO nanoparticles was increased from 10 to 90 nm, while the bonding structure of acetate groups coordinating with zinc ions evolved from unidentate to bidentate type. The UV-induced degradation results of methyl orange verified that the photocatalytic process of colloidal ZnO nanoparticles without annealing and the sample annealed at 150 °C was unstable for the weakly bonding unidentate type of acetate groups. However, the sample annealed above 150 °C demonstrated their photocatalytic stability in the whole catalytic process for the stable bidentate bonding type of acetate groups. In addition, the change of particle size in the annealing process significantly affected the catalytic activity of photocatalysts. ZnO nanoparticles annealed at 300 °C would be a prospective photocatalysts with a high catalytic activity and stability compared with the other samples.     

Fabrication of densely distributed Si nanorods by Ar-ion bombardment

For the direct fabrication of densely distributed one dimensional nanostructures on Si substrates, Si (1 0 0) surfaces were bombarded by obliquely incident 3 keV Ar⁺ ions with a simultaneous supply of Mo seed atoms at various temperatures ranging from room temperature to 400 °C. The surface sputtered at room-temperature with Mo seeding was characterized by the nanocones pointing in the direction of the incident ion beam. In addition, they possessed a so-called “web” at their acute-angle side. This web decreased in size with an increase in the sputtering temperature. Thus, the projections fabricated at elevated temperatures were featured by the nanorod-like structure rather than conical structure. With increasing the sputtering temperature, projections decreased in base diameter (from ∼90 nm at 200 °C to ∼50 nm at 400 °C) while they increased in both length (from ∼160 nm at 200 °C to ∼240 nm at 400 °C) and numerical density (from ∼5 × 10⁷ mm⁻² at 200 °C to ∼1.2 × 10⁸ mm⁻² at 400 °C). The controlled fabrication of such densely distributed one dimensional nanoprojections on Si using ion beam technique, we believe, would open up a variety of applications such as nanoelectronics and optoelectronics devices.     

Structural transformations of Fe81B13Si4C2 amorphous alloy induced by heating

Thermal stability and crystallization of the Fe₈₁B₁₂Si₄C₂ alloy were investigated in the temperature range 25-700 °C by the XRD and Mössbauer analysis. It was shown that on heating the as-prepared amorphous Fe₈₁B₁₂Si₄C₂ alloy undergoes thermal stabilization through a series of structural transformations involving the process of stress-relieving (temperature range 200-400 °C), followed by a loss of ferromagnetic properties (Curie temperature at 420 °C) and finally crystallization (temperature range 450-530 °C). The process of crystallization begins by formation of two crystal phases: Fe₃B and subsequently Fe₂B, as well as a solid solution α-Fe(Si). With increase in annealing temperature, the completely crystallized alloy involved only two phases, Fe₂B and solid solution α-Fe(Si).XRD patterns established a difference in phase composition and size of the formed crystallites during crystallization depending on the side (fishy or shiny) of the ribbon. The first nuclei of the phase α-Fe₃Si were found on the shiny side by XRD after heat treatment even at 200 °C but the same phase on the fishy side of ribbon was noticed after heat treatment at 450 °C. The largest difference between the contact and free surface was found for the Fe₂B phase crystallized by heating at 700 °C, showing the largest size of crystallites of about 130 nm at 700 °C on the free (shiny) surface.     

Thermal and dielectric studies of nickel malonate dihydrate single crystals

Single crystals of nickel malonate dihydrate were grown by the gel technique, employing the single diffusion method. Thermal dehydration of the crystal was investigated by thermogravimetric and differential thermal analyses. The title compound exhibits a steady thermal behaviour at higher temperature range of 350-800 °C. The dielectric properties of the prepared sample were analyzed as a function of frequency in the range of 1 kHz-1 MHz and at temperatures between 40 and 140 °C.     

Auger and photoluminescence analysis of ZnO nanowires grown on AlN thin film

ZnO nanowires were grown on AlN thin film deposited on the glass substrates using a physical vapor deposition method in a conventional tube furnace without introducing any catalysts. The temperature of the substrates was maintained between 500 and 600 °C during the growth process. The typical average diameters of the obtained nanowires on substrate at 600 and 500 °C were about 57 and 22 nm respectively with several micrometers in length. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into the ZnO nanowires for the sample grown at 600 °C. Photoluminescence of the nanowires exhibits appearance of two emission bands, one related to ultraviolet emission with a strong peak at 380-382 nm, and the other related to deep level emission with a weak peak at 503-505 nm. The ultraviolet peak of the nanowires grown at 500 °C was blue shifted by 2 nm compared to those grown at 600 °C. This shift could be attributed to surface effect.     

A temperature sensor based on optical microfiber knot resonator

A type of compact temperature sensor based on microfiber knot resonator is proposed and demonstrated experimentally. The microfiber knot, which is assembled by two fiber probes, is placed on a plate glass substrate and coated with low-index polymer to keep the system robust. Sensitivities of this kind of temperature sensor as 0.27 nm/°C in heating process (when temperature ranges from 28 to 140 °C) and −0.28 nm/°C in cooling process (when temperature ranges from 135 to 25 °C) are obtained. Temperature resolution of 0.5 °C is demonstrated and higher resolution is predicted with a high-resolution spectrometer.     

Growth of PTCDA crystals on H:Si(1 1 1) surfaces

The room temperature deposition of PTCDA on hydrogen passivated Si(1 1 1), as a function of evaporation temperature and dosing time, has been studied by STM. At low evaporation temperature, 200 °C, clusters with an average size of 3.5 nm are formed on the surface. The mobility of the small clusters is so high, even at room temperature, that most of the clusters are trapped at surface defects. By increasing the evaporation temperature to 230 °C, larger clusters are formed which have lower mobility. The growth process is identified as a Volmer-Weber mechanism. On increasing the evaporation temperature further to 250 °C, crystals with dendritic shape are formed with an average size of 150 nm. The terraces of the crystal are formed with the (1 0 2) basal plane of the α-phase. Molecular resolution on the terrace also allows us to identify the molecular mechanism involved in the growth of the dendritic crystals.     

Tuning visible light generation based on multi-channel quasi-periodically poled LiTaO3

We demonstrate broadband tuning visible light generation based on a multi-channel quasi-periodically poled LiTaO₃ crystal, in which a quasi-phase matched optical parametric generation process and a quasi-phase matched sum-frequency mixing process were achieved simultaneously. The conversion characters on spectrum and energy were studied by using a nanosecond pulse laser at 1.064 μm as pump light. We could tune the visible light over ~ 26 nm by means of changing the crystal's channel and temperature. The ratio of the output wavelength variation to that of temperature was ~ 0.07 nm/°C. The single-pass slope efficiency was 6.3% with the maximum output energy of 25 μJ.     

Growth and annealing of zinc-blende CdSe thin films on GaAs (0 0 1) by molecular beam epitaxy

CdSe thin films have been grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). The effects of substrate temperature and annealing treatment on the structural properties of CdSe layers were investigated. The growth rate slightly decreases due to the accelerated desorption of Cd from CdSe surface with an increase in the temperature. The sample grown at 260 °C shows a polycrystalline structure with rough surface. As the temperature increases over 300 °C, crystalline CdSe (0 0 1) epilayers with zinc-blende structure are achieved and the structural quality is improved remarkably. The epilayer grown at 340 °C displays the narrowest full-width at half-maximum (FWHM) from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) and the smallest root-mean-square (RMS) roughness of 0.816 nm. Additionally, samples fabricated at 320 °C were annealed in air for 30 min to study the films’ thermal stability. X-ray diffraction (XRD) results indicate that the zinc-blende structure remains unchanged when the annealing temperature is elevated to 460 °C, meaning a good thermal stability of the cubic CdSe epilayers.