Impact of electric currents on the insulator-metal phase transition in epitaxial thin films of La1−xAxMnO3 (A = Sr, Ca, and Ba)

The influence of dc currents with a high current density on the transport properties of epitaxial La_1−xA_xMnO₃ (A = Sr, Ca, and Ba) thin films were studied. An application of a large current could lead to a remarkable reduction in the insulator-metal phase transition peak, demonstrating a significant electroresistance effect. After removing such currents the samples could completely return to its pristine state. Our experiments reveal that such an electroresistance should be a common feature for the perovskite manganites, rather than the results caused by the self-heating or self magnetic field. It may be ascribed to the two aspects: one is the strong interaction between carrier spins and localized spins in Mn ions, the other is the percolative mechanism of phase separation.     

Effect of Cr on the magnetic properties of evaporated CoxCr1−x/Si(1 0 0) and CoxCr1−x/glass thin films

Series of Co_xCr_1−x thin films have been evaporated under vacuum onto Si(1 0 0) and glass substrates. Thickness ranges from 17 to 220 nm, and x from 0.80 to 0.88. Alternating gradient field magnetometer (AGFM) measurements provided saturation magnetization values ranging from 220 to 1200 emu/cm³. Values of squareness exceeding 0.8 have been measured. Coercive field may reach values up to 700 Oe, depending on the percentage of chromium, as well as the substrate nature and the direction of the applied magnetic field. The saturation magnetization value decreases as the Cr content increases. In order to study their dynamical magnetic properties, Brillouin Light Scattering (BLS) measurements have been performed on these samples. Stiffness constant value and anisotropy magnetic field were adjusted to fit the experimental BLS spectra. These results are analyzed and correlated.     

Structural, electrical, optical and magnetic properties of Co0.2AlxZn0.8−xO films

Co_0.2Al_xZn_0.8−xO films prepared with different molar ratio of aluminum nitrate to zinc acetate were deposited on substrates by the sol-gel technique. X-ray diffraction, photoluminescence and ferromagnetism measurements were used to characterize the Co_0.2Al_xZn_0.8−xO diluted magnetic semiconductors. The authors found that the intensity of the acceptor-related photoluminescence increased with increasing aluminum concentration and an increase in the number of the acceptor-like defects (zinc vacancies especially) in the Co_0.2Al_xZn_0.8−xO film might lead to the enhancement of the magnetic properties. This implies that controls of the aluminum concentration and the number of the acceptor-like defects are important factors to produce strong ferromagnetism Co_0.2Al_xZn_0.8−xO films prepared by the sol-gel method.     

Structural studies of evaporated CoxCr1−x/Si (1 0 0) and CoxCr1−x/glass thin films

Series of Co_xCr_1−x thin films have been evaporated under vacuum onto Si (1 0 0) and glass substrates. Chemical composition and interface properties have been studied by modelling Rutherford backscattering spectra (RBS) using SIMNRA programme. Thickness ranges from 17 to 220 nm, and x from 0.80 to 0.88. Simulation of the energy spectra shows an interdiffusion profile in the thickest films, but no diffusion is seen in thinner ones. Microscopic characterizations of the films are done with X-ray diffraction (XRD) measurements. All the samples are polycrystalline, with an hcp structure and show a 〈0 0 0 1〉 preferred orientation. Atomic force microscopies (AFM) reveal very smooth film surfaces.     

Synthesis and magnetic properties of Zn1−xMnxO films prepared by the sol-gel method

We report on the ferromagnetic characteristics of Zn_1−xMn_xO films (x=0.1-0.3) prepared by the sol-gel method on silicon substrates using transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), X-ray diffractometry (XRD) and superconducting quantum interference device (SQUID) magnetometry at various temperatures. Magnetic measurement show that the Curie temperature (T_C) and the coercive field (H_C) were ∼39 K and ∼2100 Oe for the film of x=0.2, respectively. EDS and TEM measurements indicate that Mn content at the interface is significantly higher than that at the center of the Zn_0.8Mn_0.2O film showing the ratio, Zn:Mn:O≅1:12:15. This experimental evidence suggests that ferromagnetic precipitates containing manganese oxide may be responsible for the observed ferromagnetic behavior of the film.     

Synthesis, structural and transport properties of nanocrystalline La1−xBaxMnO3 (0.0≤x≤0.3) powders

Nanocrystalline La_1−xBa_xMnO₃ (0.0≤x≤0.3) manganites have been prepared by a simple and instantaneous solution combustion method, which is a low temperature initiated synthetic route to obtain fine-grained powders with relatively high surface area. The phase purity and crystal structure of the combustion products are carried out by powder X-ray diffraction. The as-made nanopowders are in cubic phase. On calcination to 900 °C, barium doped manganites retain cubic phase, whereas barium free manganite transformed to rhombohedral phase. The scanning electron microscope (SEM) results revealed that the combustion-derived compounds are agglomerated with fine primary particles. The doped manganites have surface area in the range 24-44 m²/g. The surface area of the manganites increases with barium content, whereas it decreases on calcination. Both undoped and doped lanthanum manganites show two active IR vibrational modes at 400 and 600 cm⁻¹. The low temperature resistivity measurements have been carried out by four-probe method down to 77 K. All the samples exhibit metal-insulator behaviour and metal-insulator transition temperature (T_M-I) in the range 184-228 K and it is interesting to note that, as the barium content increases the T_M-I shifts to lower temperature side. The maximum T_M-I of 228 K is observed for La_0.9Ba_0.1MnO₃ sample.     

Electrical conductivity and low field magnetoresistance in polycrystalline La1−xKxMnO3 pellets prepared by pyrophoric method

Electrical conductivity and magnetoresistance of a series of monovalent (K) doped La_1−xK_xMnO₃ polycrystalline pellets prepared by pyrophoric method have been reported. K doping increases the conductivity as well as the Curie temperature (T_C) of the system. Curie temperature increases from 260 to 309 K with increasing K content. Above the metal-insulator transition temperature (T>T_MI), the electrical resistivity is dominated by adiabatic polaronic model, while in the ferromagnetic region (50<T<T_MI), the resistivity is governed by several electron scattering processes. Based on a scenario that the doped manganites consist of phase separated ferromagnetic metallic and paramagnetic insulating regions, all the features of the temperature variation of the resistivity between ∼50 and 300 K are described very well by a single expression. All the K doped samples clearly display the existence of strongly field dependent resistivity minimum close to ∼30 K. Charge carrier tunneling between antiferromagnetically coupled grains explains fairly well the resistivity minimum in monovalent (K) doped lanthanum manganites. Field dependence of magnetoresistance at various temperatures below T_C is accounted fairly well by a phenomenological model based on spin polarized tunneling at the grain boundaries. The contributions from the intrinsic part arising from DE mechanism, as well as, the part originating from intergrannular spin polarized tunneling are also estimated.     

Magnetotransport, optical, and electronic subband properties in AlxGa1−xN/AlN/GaN heterostructures

The Shubnikov-de Haas (S-dH) results at 1.5 K for Al_xGa_1−xN/AlN/GaN heterostructures and the fast Fourier transformation data for the S-dH data indicated the occupation by a two-dimensional electron gas (2DEG) of one subband in the GaN active layer. Photoluminescence (PL) spectra showed a broad PL emission about 30 meV below the GaN exciton emission peak at 3.474 eV that could be attributed to recombination between the 2DEG occupying in the AlN/GaN heterointerface and photoexcited holes. A possible subband structure was calculated by a self-consistent method taking into account the spontaneous and piezoelectric polarizations, and one subband was occupied by 2DEG below the Fermi level, which was in reasonable agreement with the S-dH results. These results can help improve understanding of magnetotransport, optical, and electronic subband properties in Al_xGa_1−xAs/AlN/GaN heterostructures.     

Electronic and structural properties of zincblende AlxIn1−xN

Numerical calculations based on first-principles are applied to study the electronic and structural properties of ternary zincblende AlInN alloy. The results indicate the lattice constant has a small deviation from the Vegard’s law. The direct and indirect bowing parameters of 4.731 ± 0.794 eV and 0.462 ± 0.285 eV are obtained, respectively, and there is a direct-indirect crossover near the aluminum composition of 0.817. The bulk modulus is monotonically increased with an increase of the aluminum composition, and the deviation parameter of bulk modulus of 10.34 ± 9.37 GPa is obtained. On the contrary, the pressure derivative of bulk modulus is monotonically decreased with an increase of the aluminum composition.     

Optical properties of high-Al-content crack free AlxGa1−xN (x<0.67) films grown on Si(111) by molecular-beam epitaxy

We report on the optical properties of high-Al-content crack free Al_xGa_1−xN (x<0.67) films grown by molecular-beam epitaxy on Si(111) substrates using ammonia as nitrogen source. The energetic position of the A free exciton as a function of the Al content is determined from photoluminescence and reflectivity measurements at low temperature. A bowing parameter of b=1 eV is deduced from these measurements. The excitonic linewidth increases as a function of Al concentration. The observed variation agrees very well with the one calculated using a model in which the broadening effect is assumed to be due to alloy compositional disordering.     

Influence of heat treatment on the structure and magnetic properties of the Co/Zr and Co/Hf multilayer amorphous films

The influence of annealing on the structure and magnetic properties of amorphous Co/Zr and Co/Hf multilayer films was studied with particular attention to the dependence of the magnetic properties, thermal stability and crystallization process on layer composition and thickness. The temperature at which crystallization commences increases from 400 to 460 °C as the layer thickness d_Zr or d_Hf increases from 6 to 18 Å, and decreases from 450 to 400 °C as d_Co increases from 12 to 18 Å. Multilayers containing 19–60 at% Zr were studied. The specific magnetization was found to increase even below the temperature at which crystallization commences. Our data are compared with non-multilayer Co–Zr amorphous films and rapidly quenched metallic glasses.     

Transmission electron microscopy of Co2(Cr1−xFex)Al sputtered films and their magnetic tunneling junctions

The microstructures of Co₂FeAl and Co₂(Cr_0.4Fe_0.6)Al sputtered films and of their magnetic tunnel junctions (MTJs) have been investigated to discuss the possible reasons for an unexpectedly low tunneling magnetoresistance (TMR). The structure of the Co₂FeAl film changed from B2 to L2₁ with increasing substrate temperature, while that of the Co₂(Cr_0.4Fe_0.6)Al film remained B2 up to 500 °C. The thermodynamically predicted phase separation was not observed in the films. The low TMR values obtained from the MTJs using the Co₂FeAl and Co₂(Cr_0.4Fe_0.6)Al films are attributed to the low-spin polarization expected from the low degree of order in these films. The TMR values depend sensitively on the interfacial structure of the tunnel junctions when the degree of order of the film is low.     

Atomistic computer simulation studies of La1−xSrxVO3

Static computer simulation techniques have been employed for structural investigation of the La_1−xSr_xVO₃ series. Potential parameters for V³⁺-O²⁻ and V⁴⁺-O²⁻ have been derived which reproduces the crystal structures of end members with sufficient accuracy. Variations of lattice parameters and bond distances with Sr concentration have been studied. The calculated lattice parameters decrease with increase in the Sr concentration. A structural phase transition from orthorhombic to cubic is observed at 50% Sr doping level.     

Preparation of (CdO)1−x(PbO)x and (CdS)1−x(PbS)x thin films by spray pyrolysis technique and their characterization

Mixed thin films of (CdO)_1−x(PbO)_x and (CdS)_1−x(PbS)_x (x=0.25) were prepared on glass substrates by spray pyrolysis technique for various substrate temperatures 300, 320 and 340 °C. Structural and optical properties were studied. XRD studies reveal the formation of mixed films. The substrate temperature of 340 °C seems to be critical for the formation of CdO-PbO mixed films. It is observed that (CdS)_1−x(PbS)_x mixed films were formed at all the three substrate temperatures. The direct band gap value of (CdO)_1−x(PbO)_x and (CdS)_1−x(PbS)_x mixed films is about 2.6 and 2.37 eV, respectively.     

Epitaxial MnP thin films: epitaxial growth,magnetic and electrical properties

We have grown 500 Å MnP on undoped GaAs(1 0 0) substrate using solid-source molecular beam epitaxy. In order to characterize the crystal structure of MnP, we performed in-situ reflection high energy electron diffraction and θ–2θ XRD X-ray diffraction studies. From the measurements of superconducting quantum interference device, Quantum Design, MnP thin film shows ferromagnetic ordering at around 291.5 K. It shows a metallic resistivity in MnP thin film.     

Magnetic properties of ErxY1−xF3 solid solutions

The Er_xY_1−xF₃ (x=0.1, 0.2, 0.7, 0.9, 1) solid solutions were synthesized and characterized by X-ray powder diffraction and magnetic measurements. The crystal structure refinements done by the Rietveld profile method show that no significant change of the structure parameters with the erbium concentration occurs. On the basis of DC susceptibility measurements in the 2-300 K range the lowest four crystal field levels have been determined, giving the ground level magnetic moment value of 6.7 μ_B. Results of M(H) studies point to the presence of complex exchange interactions between erbium ions.     

Nd composition dependence of microstructure and magnetic properties for gradient sputtered NdFeB films

NdFeB films with Nd compositions varied from 13.34 to 24.30 at% were deposited by DC gradient sputtering using targets Nd_12.5Fe_71.5B₁₆ and Nd. The hard magnetic properties, grain growth direction and magnetic domain structures were dramatically influenced by Nd composition. The samples with intermediate Nd concentrations exhibited optimal magnetic properties and microstructures, such as large squareness ratio over 0.9, large energy product up to 174 kJ/m³, and vertical domain structure. However, the samples with higher and lower Nd compositions showed almost isotropic loops. (0 0 l) as main X-ray diffraction peaks in the optimal Nd composition region indicated most of Nd₂Fe₁₄B grains with c-axis perpendicular to the film plane, while NdFeB grains in other region are almost random growth. The good magnetic properties can be attributed to the vertical growth of Nd₂Fe₁₄B grains.     

Transport properties and magnetoresistance in CoNb1−xMnxSb half-Heusler alloys with a low temperature localization

The transport properties and magnetoresistance of half-Heusler CoNb_1−xMn_xSb (x=0.0-1.0) alloys have been investigated between 2 and 300 K. In this temperature range, a metallic conductivity has been observed for the alloys with higher (x=1.0) and lower (x=0.0-0.2) Mn contents. However, the middle Mn content alloys (x=0.4-0.8) exhibit non-metallic conductive behavior. Their temperature dependence of resistivity undergoes a Mott localization law ρ=ρ₀exp(T₀/T)^p (p=1/4) rather than a thermal excitation regime ρ=ρ₀exp(E_a/kT) at low temperature (). The localization can be attributed to atomic and magnetic disorder. Resistivity peaks from 25 to 300 K were also observed for these alloys. Magnetotransport investigation reveals that these resistivity peaks result from localization effect as well as spin-disorder scattering.     

Low-field transport properties of (1−x)La0.7Ca0.2 Sr0.1MnO3+x(ZnO) composites

Composite samples (1−x)La_0.7Ca_0.2Sr_0.1MnO₃(LCSMO)+x(ZnO) with different ZnO doping levels x have been investigated systematically. The structure and morphology of the composites have been studied by the X-ray diffraction (XRD) and scanning electronic microscopy (SEM). The XRD and SEM results indicate that no reaction occurs between LCSMO and ZnO grains, and that ZnO segregates mostly at the grain boundaries of LCSMO. The magnetic properties reveal that the ferromagnetic order of LCSMO is weakened by addition of ZnO. The results also show that ZnO has a direct effect on the resistance of LCSMO/ZnO composites, especially on the low-temperature resistance. With increase of the ZnO doping level, T_P shifts to a lower temperature and the resistance increases. It is interesting to note that an enhanced magnetoresisitance (MR) effect for the composites is found over a wide temperature range from low temperature to room temperature in an applied magnetic field of 3 kOe. The maximum MR appears at x=0.1. The low field magnetoresistance (LFMR) results from spin-polarized tunneling. However, around room temperature, the enhanced MR of the composites is caused by magnetic disorder.     

Soft magnetic properties of FeCo films with Co underlayer

Bilayered Fe₆₅Co₃₅ (=FeCo)/Co films were prepared by facing targets sputtering with 4πM_s∼24 kg. The soft magnetic properties of FeCo films were induced by a Co underlayer. H_c decreased rapidly when the Co underlayer was 2 nm or more. The films showed well-defined in-plane uniaxial anisotropy with the typical values of H_ce=10 Oe and H_ch=3 Oe, respectively. High frequency characteristics of the films show the films can work at 0.8 GHz with real permeability as high as 250.