Optical and electrical properties of aluminum zinc oxide (AZO) nanostructured thin film deposited on polycarbonate substrate

Transparent polymer materials, due to their unique properties, such as light weight, optical transparency, and electrical and mechanical properties, have become very attractive as a replacement for inorganic glass substrates in a wide range of optoelectronic applications. In this research, aluminum zinc oxide nanostructured thin film was deposited on polycarbonate polymer substrates using a magnetron sputtering technique. The structure, morphology, and surface composition of the thin film were investigated by X-ray diffraction and field emission scanning electron microscopy. The optical and electrical properties of the thin film were investigated by UV–VIS-NIR spectrophotometer, ellipsometer, and four point probe method. The X-ray diffraction pattern showed that the aluminum zinc oxide thin film had a polycrystalline structure. The optical and electrical results indicated that the refractive index, band gap, and sheet resistance of the aluminum zinc oxide thin film were 1.8, 3.2 eV, and 265 Ω/sq, respectively.     

Dependence of film thickness on the electrical and optical properties of ZnO-Cu-ZnO multilayers

ZnO-Cu-ZnO multilayers were prepared by simultaneous RF magnetron sputtering of ZnO and DC magnetron sputtering of Cu. Cu films with different thickness were used as the intermediate metal layer. The optical and electrical properties of the multilayers studied by UV-vis spectrophotometer and four point probe method, respectively, shows that transmittance increases with decrease of copper thickness up to an optimum thickness of 5 nm and sheet resistance decreases with increase of thickness. Low resistivity and high transmission were obtained when the film structure has a thickness of ZnO/Cu/ZnO: 50/5/50 nm. The performance of the multilayers as transparent conducting material was better than the single layer ZnO of equal thickness.     

Effect of feedstock powder characteristics on microstructure and mechanical properties of lanthanum silicate coatings deposited by atmospheric plasma spraying

Lanthanum silicate coatings were deposited onto stainless steel substrates by atmospheric plasma spraying (APS) using mechanically mixed (type A) and calcined feedstock (type B) powders. The phase composition, microstructure, density and porosity of coatings prepared from the two types of powder were compared.     

Studies on the structural and electrical properties of F-doped SnO2 film prepared by APCVD

Fluorine-doped tin oxide films (SnO₂:F, FTO) were deposited by atmosphere pressure chemical vapor deposition (APCVD) on Na-Ca-Si glass coated with a diffusion barrier layer of SiO_xC_y. The effects of post-heating time at 700 °C on the structural and electrical properties of SnO₂:F films were investigated. The results showed that SnO₂:F films were polycrystalline with tetragonal SnO₂ structure, SnO phase was present in SnO₂ film, and abnormal grain growth was observed. The element distribution in the film depth was measured with X-ray photoelectron spectroscopy (XPS) and revealed that when the heating time increased from 202 s to 262 s, the oxygen content in the surface increased from 78.63% to 83.38%. The resistivity increased from 3.13 × 10⁻⁴ for as-deposited films to 4.73 × 10⁻⁴ Ω cm when post-heated for 262 s. Hall mobility is limited by the ionized impurity scattering rather than the grain boundary scattering.     

NTC热敏电阻温度特性研究

通过实验研究了NTC热敏电阻随温度的变化情况,得到电阻～温度曲线。根据NTC热敏电阻值的自然对数与其绝对温度之间的线性关系,利用最小二乘法确定了热敏指数B,从而求得在测量温度范围内的温度系数αT。     

Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering

We report on the electrical properties of bottom-gate ZnO thin film transistors (TFTs) with different active layer thicknesses. The ZnO active layer films with thickness varied from 20 to 100 nm were deposited by radio frequency (rf) magnetron sputtering on SiO₂/p-Si substrate and annealed at a high temperature of 950 °C. The transistor with 40 nm thick ZnO exhibited the best performance, with a field effect mobility of 27.5 cm²/V s, a threshold voltage of −2.4 V and an on/off ratio of 7×10³.     

Structure,magnetic and microwave properties of FeNi invar nanoparticles obtained by electrical explosion of wire in different preparation conditions

Magnetic nanoparticles (MNPs) of close to invar (Fe_0.635Ni_0.365) composition were prepared by the electrical explosion of wire using different conditions to insure different values of overheating rates. X-ray diffraction, transmission electron microscopy, low temperature nitrogen adsorption, magnetic and microwave measurements were used for the characterization of MNPs. Increase of the energy injected into the wire led to increase of the specific surface (S_sp) of the produced MNPs from 4.6 to 13.5 m²/g. The fabricated MNPs were spherical and weakly aggregated with the average weighted diameter in the range of 54–160 nm depending on the S_sp. The phase composition of FeNi MNPs consists of two solid solutions of Ni in α-phase and γ-phase lattices. The increase of the energy injected into the wire leads to increase of the α-phase from 5 to 10 wt% as the injected energy raised from 0.8 to 2.5 times the sublimation energies of the wire material. Comparative analysis of structure magnetic and microwave properties showed that the obtained MNPs are important magnetic materials with high saturation magnetization and significant zero field microwave absorption which can be expected to lead to important technological applications.     

Study on the electrical and optical properties of Ag/Al-doped ZnO coatings deposited by electron beam evaporation

A layer of silver was deposited onto the surface of glass substrates, coated with AZO (Al-doped ZnO), to form Ag/AZO film structures, using e-beam evaporation techniques. The electrical and optical properties of AZO, Ag and Ag/AZO film structures were studied. The deposition of Ag layer on the surface of AZO films resulted in lowering the effective electrical resistivity with a slight reduction of their optical transmittance. Ag (11 nm)/AZO (25 nm) film structure, with an accuracy of ±0.5 nm for the thickness shows a sheet resistance as low as 5.6 ± 0.5 Ω/sq and a transmittance of about 66 ± 2%. A coating consisting of AZO (25 nm)/Ag (11 nm)/AZO (25 nm) trilayer structure, exhibits a resistance of 7.7 ± 0.5 Ω/sq and a high transmittance of 85 ± 2%. The coatings have satisfactory properties of low resistance, high transmittance and highest figure of merit for application in optoelectronics devices including flat displays, thin films transistors and solar cells as transparent conductive electrodes.     

热退火对等离子体增强化学气相沉积SiCOH薄膜结构与性能的影响

热退火是多孔低介电常数薄膜制备过程中的重要一环, 对薄膜结构及性能具有重要影响. 本文以四乙氧基硅烷和双戊烯为前驱体, 采用等离子体增强化学气相沉积方法制备了SiCOH薄膜, 对其进行了氮气氛围下的热退火处理, 分析了热退火对薄膜结构与性能的影响, 探究了退火过程中薄膜结构变化的可能的反应机理. 傅里叶变换红外光谱和固体核磁共振谱结果表明, 沉积薄膜是一种有机无机杂化薄膜. 退火过程中, 薄膜中的-CH₂, -CH₃等有机组分被分解除去, 形成了以稳定的Si-O-Si等无机组分为骨架的多孔结构, 并通过氮气吸附/脱附等温线测试得到了验证. 在此期间, 薄膜骨架微结构亦发生一系列调整, C=C, Si-C含量增加, Si、O、C等元素间发生进一步键合. C=C 含量的提高, 使得薄膜的消光系数和漏电流密度增大. 实验证明, 退火后薄膜具有低折射率、低介电常数特性, 是一类具有优异的介电性能和力学性能的材料, 作为芯片后端互连层间介质具有极大的应用潜力.     

Effect of laser irradiation on the electrical properties of dysprosium doped LiCo-Ferrite

The effect of laser irradiation on the electrical properties of Li_0.5+z Co _z Dy _x Fe_2.5?2z?x O₄ ferrite (0.0 ≤ x ≤ 0.2, z = 0.1) has been studied in the temperature range 300 K ≤ T ≤ 750 K at frequencies of 10 kHz?5 MHz, using a LIMO-IR laser diode, at a wavelength of 808 nm. It was found that laser irradiation increases the polarization, the resistivity and the paramagnetic region. As the result of electronic rearrangement and lattice defects, small polorons and clusters were created. The doping of LiCo-Ferrite by Dy³⁺ increases both the AC and DC resistance of the investigated material. The variation of the AC and DC resistance with the Dy-content (x) obeys the following correlations R _ac/100 = 50x ²+4x+0.005 and R _dc/1000 = 31x ²+0.099x+0.09, respectively. A peculiar behaviour was obtained for the sample with Dy-content x = 0.075, as the resistance notably decreases. The applicable result is that laser irradiation increases the resistance of LiCo-ferrite by about 17% while its doping by dysprosium at x = 0.15 increases the resistance by about 23%. Its value is nearly stable for the temperature range from 340 to 480 K.     

Effect of intercalation on electrical and mechanical properties of C/C composites

The work is concerned with modification of C/C composites by intercalation of copper chloride. The samples of composites were made from graphite fibres and carbon matrix derived from mesophase pitch and from phenol-formaldehyde resin. The samples were prepared by impregnating graphite fibres with a liquid pitch or polymer solution to obtain unidirectional laminates. The laminates were used to prepare the composites which were then subjected to carbonization and graphitization up to 2150 °C. The work discusses the problem relevant to the effect of intercalation on mechanical and electrical properties of composites. The studies indicated that both mesophase pitch-based composites and phenolic-derived carbon-carbon composites changed their electrical and mechanical properties upon intercalation with copper chloride. Electrical conductivity of both types of composites decreased as a result of the damages formed during intercalation.     

Li-doping effects on the electrical properties of ZnO films prepared by the chemical-bath deposition method

Zn_1−xLi_xO thin films, with x varying from 0.0 to 0.5, successfully have been deposited on glass substrates using the chemical bath deposition (CBD) technique. J–E characteristics, DC conductivity and dielectric measurements have been carried out. These measurements were done as a function of temperature, Li concentration and applied electric field intensity. The J–E characteristics are explained in terms of the Pool–Frenkel and Schottky effects. The J–E relation and DC conductivity are strongly dependent on both the Li concentration and applied electric field intensity. Dielectric hysteresis was observed between heating and cooling runs which revealed that the dielectric constant often increases slowly in the low-temperature region, then increases faster above the phase transition.     

Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

We report the fabrication and electrical characteristics of thin film transistors based on MgZnO thin films with different thicknesses of MgO buffer layer. The MgZnO thin films with MgO buffer layers were grown on SiO₂/p-Si substrates by plasma assisted molecular beam epitaxy. The effects of the buffer layer thickness on the structural properties of MgZnO films are investigated by X-ray diffraction, and the results show that the crystal quality of the MgZnO film is enhanced with 4 nm MgO buffer layer. The MgZnO TFT with 4 nm MgO buffer layer exhibits an n-type enhancement mode characteristics with a field effect mobility of 1.85 cm²/V s, a threshold voltage of 27.6 V and an on/off ratio of above 10⁶.     

Effect of spraying power on the microstructure and mechanical properties of supersonic plasma-sprayed Ni-based alloy coatings

The aim of this paper was to investigate the microstructure and mechanical properties of the supersonic plasma-sprayed Ni-Cr-B-Si-C coatings prepared at different spraying powers. The microstructure, phase composition, porosity, Young's modulus, micro-hardness, and residual stresses of the coatings were investigated and determined. The variations of the porosity, Young's modulus and micro-hardness of the coatings were evaluated by using statistical method. Results showed that the variations of porosity, Young's modulus and micro-hardness of the coatings followed the Weibull distributions. With increasing the porosity, the micro-hardness and Young's modulus of the coating decreased. The mean value of the Young's modulus of the coating calculated from Weibull plot was almost proportional to the square root of the micro-hardness of the coating. With increasing the power, Young's modulus of the coating increased, which, in turn, resulted in the increment of the residual stress at the coating surface.     

Annealing effects on electrical and optical properties of ZnO thin films synthesized by the electrochemical method

Microstructural and electrical properties of potentiostatically electrodeposited ZnO thin films from an aqueous bath were investigated after annealing at different temperatures in Ar and 5% H₂/Ar atmospheres. It is confirmed that the bandgap energy of ZnO thin films decreased with annealing from 3.42 to 3.27-3.29 eV by calculating the wavelength of the absorption region. The annealing at temperatures as low as 200 °C decreased the sheet resistance of ZnO thin films because of the extinction of Zn(OH)₂ in the atmosphere. In addition, the sheet resistance of ZnO thin films decreased by annealing in a 5% H₂ atmosphere, which caused an increase of carrier concentration by hydrogen reduction.     

Influence of standoff distance on the structure and properties of carbon coatings deposited by atmospheric plasma jet

Carbon coatings were deposited by atmospheric plasma jet. Influence of the distance between the exit of the plasma gun and a substrate (consequently temperature of the substrate) on properties of the coatings was investigated. The coatings deposited near to the exit of the plasma gun are porous with columnar structure, moderate hardness (∼10 GPa), and the lowest hydrogen (∼7 at.%) concentration. The coatings deposited at the larger standoff distance (>5 mm) have higher hydrogen (≤25 at.%) content and graphite-like structure. Most of the hydrogen in all coatings is bonded to the sp³ carbon (70-60 at.%) and predominantly forms methylene compounds. Decrease of standoff distance yields lower concentration of sp³ CH₃ compounds and relative increase of amount of hydrogenated sp² rings.     

Physical properties of ZnO thin films deposited by spray pyrolysis technique

Thin films of ZnO have been prepared on glass substrates at different thicknesses by spray pyrolysis technique using 0.2 M aqueous solution of zinc acetate. X-ray diffraction reveals that the films are polycrystalline in nature having hexagonal wurtzite type crystal structure. The resistivity at room temperature is of the order 10⁻² Ω cm and decreased as the temperature increased. Films are highly transparent in the visible region. The dependence of the refractive index, n, and extinction coefficient, k, on the wavelength for a sprayed film is also reported. Optical bandgap, E_g, has been reported for the films. A shift from E_g = 3.21 eV to 3.31 eV has been observed for deposited films.     

Microstructure and mechanical properties of Al2O3-Al composite coatings deposited by plasma spraying

Al₂O₃ and Al₂O₃-Al composite coatings were prepared by plasma spraying. Phase composition of powders and as-sprayed coatings was determined by X-ray diffraction (XRD), while optical microscopy (OM) and scanning electron microscopy (SEM) were employed to investigate the morphology of impacted droplets, polished and fractured surface, and the element distribution in terms of wavelength-dispersive spectrometer (WDS). Mechanical properties including microhardness, adhesion and bending strength, fracture toughness and sliding wear rate were evaluated. The results indicated that the addition of Al into Al₂O₃ was beneficial to decrease the splashing of impinging droplets and to increase the deposition efficiency. The Al₂O₃-Al composite coating exhibited homogeneously dispersed pores and the co-sprayed Al particles were considered to be distributed in the splat boundary. Compared with Al₂O₃ coating, the composite coating showed slightly lower hardness, whereas the coexistence of metal Al phase and Al₂O₃ ceramic phase effectively improved the toughness, strength and wear resistance of coatings.     

Effect of Sn doping on the structural,optical and electrical properties of TiO2 films prepared by spray pyrolysis

In this work, highly oriented pure and Tin-doped Titanium dioxide (Sn-doped TiO₂) with porous nature photoelectrodes were deposited on ITO glass plates using spray pyrolysis technique. The XRD pattern revealed the formation of anatase TiO₂ with the maximum intensity of (101) plane while doping 6 at% of Sn. The morphological studies depicted the porous nature with the uniform arrangement of small-sized grains. The presence of tin confirmed with the EDX spectra. The size of particles of 13 nm was observed from High Resolution Transmission Electron Microscopy (HR-TEM) analysis. The average transmittance was about 85% for the doped photoelectrode and was observed for the photoelectrode deposited with 6 at% of tin, with decreased energy band gap. The PL study showed the emission peak at 391 nm. The maximum carrier concentration and Hall mobility was observed for the photoelectrode deposited with 6 at% of tin. With these studies, the DSSCs were prepared separately with the dye extracted from Hibiscus Rosasinesis and Hibiscus Surttasinesis and their efficiency was maximum for the DSSC prepared with 6 at% of tin.