共查询到20条相似文献,搜索用时 109 毫秒
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利用霍尔元件测永磁材料的静态特征石环英,石琳(长沙铁道学院410075)(湖南大学)在大学物理实验中有一利用霍尔效应测永磁材料磁场的实验,测量C型电磁铁空隙中的磁感应强度.本人以此实验为基础,设计了一种利用霍尔元件测永磁材料静态磁特性的设备.一、实验... 相似文献
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模数转换器(ADC)在测控系统中应用广泛,针对嵌入式ADC复杂环境下的电磁敏感性问题,通过理论分析和实验测量研究了环境温度对其电磁敏感度的影响。结合ADC结构与特性,分析了射频信号对ADC的干扰机制,指出了环境温度对干扰信号作用下的金属氧化物半导体(MOS)漏电流的影响。在不同温度下,测量、分析了电磁干扰下各部分电路参数的变化情况。并在10 MHz~1 GHz频率范围、-10~80 ℃温度范围内测量了ADC电磁敏感度的温度效应。结果表明,变化的环境温度会通过影响MOS晶体管的迁移率,改变其在电磁干扰下的响应,造成ADC电磁敏感度随环境温度变化发生显著漂移。 相似文献
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Mamone S Dorsch A Johannessen OG Naik MV Madhu PK Levitt MH 《Journal of magnetic resonance (San Diego, Calif. : 1997)》2008,190(1):135-141
We describe a new method for independent monitoring of the angle between the spinning axis and the magnetic field in solid-state NMR. A Hall effect magnetic flux sensor is fixed to the spinning housing, so that a change in the stator orientation leads to a change in the angle between the Hall plane and the static magnetic field. This leads to a change in the Hall voltage generated by the sensor when an electric current is passed through it. The Hall voltage may be measured externally by a precision voltmeter, allowing the spinning angle to be measured non-mechanically and independent of the NMR experiment. If the Hall sensor is mounted so that the magnetic field is approximately parallel to the Hall plane, the Hall voltage becomes highly sensitive to the stator orientation. The current angular accuracy is around 10 millidegrees. The precautions needed to achieve higher angular accuracy are described. 相似文献
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本文回顾了石墨烯霍尔传感器的相关研究工作.通过改善石墨烯生长转移和霍尔元件的微加工工艺,石墨烯霍尔元件和霍尔集成电路都展示出超越传统霍尔传感器的优异性能.石墨烯霍尔元件的灵敏度、分辨率、线性度和温度稳定性等重要指标都优于传统商用霍尔元件.通过开发一套钝化工艺,霍尔元件的稳定性有了明显提升.结合石墨烯材料的特点,展示了石墨烯在柔性磁传感和多功能传感领域的新颖应用.此外,成功实现了石墨烯/硅互补型金属-氧化物-半导体(CMOS)混合霍尔集成电路,并进行了应用展示.通过发展一套低温加工工艺(不超过180℃),将石墨烯霍尔元件制备在硅基CMOS芯片的钝化层上,从而与硅基CMOS电路实现了单片集成.本文的研究结果表明石墨烯在霍尔磁探测方向拥有重大的性能优势,在产业化应用中有巨大发展潜力. 相似文献
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In this paper, the characteristics of Fe-based amorphous ribbon based on the longitudinal excitation are investigated with assistance of the theory of the giant magneto-impedance (GMI) effect. A feedback-type GMI micro-magnetic sensor is designed with regard to the design of the sensing element, the excitation circuit, the conditional circuit and the feedback circuit. With the analysis of the dynamic and static characteristics of the feedback-type GMI sensor, it is concluded that the designed feedback-type GMI sensor has higher linearity, stability and dynamic characteristics than non-feedback-type GMI sensor in −2.5 to +2.5 Oe. 相似文献
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Hall传感器是加速器磁铁磁场测量必不可少的工具之一。为保证Hall传感器能够完成高精度的测量,在实际使用过程中,需要对其进行周期性标定。除此以外,当前加速器磁体的测试任务对Hall传感器的测量范围及工作温度提出了新的需求,因此建立一套标准的大跨度磁场及温度范围的Hall传感器标定系统具有非常重要的现实意义。基于此,搭建了一套完整的高精度Hall传感器标定系统并着重论述了其中的数据采集部分。目前基于该系统开展了一系列0~2.0 T磁场区(HHP-NP、HPCS、DTM151、HE244T等Hall传感器)下的标定尝试,标定曲线采用线性、多项式等不同方式拟合,结果表明拟合结果良好,线性偏离程度(测试结果线性偏离程度越小,精度越好)最优情况下好于0.01%。 相似文献
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Hall effect measurements of a graphene-on-SiC system were carried out as a function of temperature (1.8–200 K) at a static magnetic field (0.5 T). With the analysis of temperature dependent single-field Hall data with the Simple Parallel Conduction Extraction Method (SPCEM), bulk and two-dimensional (2D) carrier densities and mobilities were extracted successfully. Bulk carrier is attributed to SiC substrate and 2D carrier is attributed to the graphene layer. For each SPCEM extracted carrier data, relevant three-dimensional or 2D scattering analyses were performed. Each SPCEM extracted carrier data were explained with the related scattering analyses. A temperature independent mobility component, which may related to an interaction between graphene and SiC, was observed for both scattering analyses with the same mobility limiting value. With the SPCEM, effective ionized impurity concentration of SiC substrate, extracted 2D-mobility, and sheet carrier density of the graphene layer are calculated with using temperature dependent static magnetic field Hall data. 相似文献
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霍尔效应在直流电压隔离传送中的应用 总被引:2,自引:1,他引:1
应用基于霍尔效应的磁平衡原理设计了直流电压高精度隔离传送传感器,并与光耦传感器进行了比较,结果表明:在温度变化的环境中,该传感器隔离传送直流电压的精度优于光耦传感器28倍. 相似文献
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Master equation approach to conductivity of bosonic and fermionic carriers in one‐ and two‐dimensional lattices 下载免费PDF全文
Andrey R. Kolovsky 《Annalen der Physik》2014,526(1-2):102-111
The master equation approach to diffusive current of bosonic or fermionic carriers in one‐ and two‐dimensional lattices is discussed. This approach is shown to reproduce all known results of the linear response theory, including the integer quantum Hall effect for fermionic carriers. The main advantage of the approach is that it allows to calculate the current beyond the linear response regime where new effects are found. In particular, the Hall current can be inverted by changing orientation of the static force (electric field) relative to the primary axes of the lattice. 相似文献
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霍尔传感器作为一种半导体器件,其灵敏度随着温度变化而产生漂移的特性,限制了其在高精度磁场测量场合的应用。传统的温度补偿方法虽然对温度变化的一次项进行了完全补偿,但是却引入了温度变化二次项的误差。因此,对于温度变化显著的高精度测量场合,传统温度补偿法将不再适用。设计了一种闭环反馈电路,通过温度传感器采集温度信号,与信号处理电路的最终输出信号进行运算后送回信号处理电路的输入端进行补偿,而并不是简单地将温度信号与霍尔信号的输入信号进行相加后送入信号处理电路。仿真分析结果表明,通过调节补偿电路的反馈比例系数与霍尔芯片温度漂移系数,可以完全补偿霍尔芯片的灵敏度漂移。因此,这种闭环补偿方法可以不引入与温度变化二次项有关的误差,消除因温度变化产生的漂移,不仅适用于霍尔传感器,也适用于其他会随着温度漂移的传感器。 相似文献